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Andrew Griffiths

Dr Andrew Griffiths

ICS Process Engineer

School of Physics and Astronomy

Translational Research Hub, Room 2.02, Maindy Road, Cathays, Cardiff, CF24 4HQ


I completed my PhD at Sheffield University in 2015, working on the MBE growth of self-assembled quantum dots. After that, I moved to industry, and worked for IQE as a senior epitaxy process engineer until 2021. At IQE, I worked primarily on production InP-based devices, allowing me to work in Cardiff and Bethlehem, PA. This experience led me to work as the director of epitaxy for Vital Materials' CSM, spearheading epitaxy projects to showcase the materials that Vital Materials can produce.

I joined Cardiff University's Institute for Compound Semiconductors as a process engineer in January 2023.


My research interests involve epitaxy of self-assembled quantum dots, and novel epitaxial devices. My main experience is in small scale MBE and production MOCVD.


I've been working at the ICS as a process engineer since January 2023, helping my colleagues make the transfer from Queens to the TRH.

My previous expertise is in compound semiconductor (III-V) epitaxy, with experience in both MOCVD and MBE. My most recent job posting prior to starting at Cardiff University was with Vital Materials, working as an epitaxy director in their specialised foundry in Wanzhou, China. My role was to improve epitaxial procedures and to impart my knowledge and expertise into the existing epitaxy group. My work there involved the growth of visible VCSELs (660 nm), InP-based DFBs and detectors on Aixtron G4 reactors, as well as implementing new procedures and providing documentation for best practise.

Before working at Vital Materials, I worked for IQE as a senior epitaxy process engineer. I started in 2014, where I was put in charge of InP MOCVD growth, focusing on getting better growth yield and improved running efficiency of the larger orders. My work on this led to being awarded the ESTNET Young Engineer of the Year in 2016.

Following this award, I was seconded to the IQE facility in Bethlehem, PA, where I spearheaded a team of engineers to grow production InP devices on Aixtron G3 reactors. We managed to turn mothballed reactors into machines that had passed qualification for numerous reputable semiconductor companies. During this time, I helped write numerous procedures for optimal operation in a production environment, useful as most growth had been small batch.

I returned to the UK in 2018, thereafter focusing on R&D InP growth, and scaling from small batch products to full-scale production.

Prior to my work at IQE, I was a PhD student at the University of Sheffield, working on multiple research VG Semicon MBE reactors as part of the Centre for III-V Technologies. As well as my research, I worked as a growth scientist, providing III-V material for the UK academic community under the tutelage of Dr. Edmund Clarke. My thesis was completed at the end of 2014, titled "Exploring MBE Growth of Quantum Dots: Low Density Growth for Quantum Information Devices". I focused on the retention of spin information in self-assembled InAs quantum dots, finding promising results from exciting quantum dots into the bulk GaAs crystal with spin polarised light.

My previous education was also at the University of Sheffield, where I completed an undergraduate masters in engineering, publishing my work from my 3rd year project, which looked at the eliminination of carbon contamination in TEM samples by using a plasma pre-clean.

Prior to my studies, I partook in the Year in Industry programme, working for Oxford Instruments Plasma Technology, where I worked for the applications laboratory and R&D team, eventually helping the company secure a patent for improving the uniformity of ICP deposition of Si-based dielectric films.

I am from Bristol, and have lived in Cardiff (on and off) since 2015.

Honours and awards

ESTNET Young Engineer of the Year Award 2016.