Dr Zbig Sobiesierski
MInstP, CPhys
Director of Continuing and Professional Education
- SobiesierskiZ@cardiff.ac.uk
- +44 29208 75264
- 21-23 Senghennydd Road, Room 2.57, Abacus building, Senghennydd Road, Cathays, Cardiff, CF24 4AG, Cathays, Cardiff, CF24 4AG
Overview
Mae gennyf brofiad helaeth o gyflwyno darlithoedd arddangos, gweithdai, a chyflwyniadau academaidd ar gyfathrebu gwyddoniaeth ac ymgynghori
Publication
1999
- Westwood, D. I., Sobiesierski, Z. and Matthai, C. C. 1999. The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science 144-45, pp. 484-487. (10.1016/S0169-4332(98)00845-9)
- Quagliano, L. G., Sobiesierski, Z., Orani, D. and Ricci, A. 1999. Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures. Physica B: Condensed Matter 263-64, pp. 775-778. (10.1016/S0921-4526(98)01460-4)
1998
- Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z. and Westwood, D. I. 1998. Optical monitoring of InP monolayer growth rates. Applied Physics Letters 73(3), pp. 345-347. (10.1063/1.121829)
- Westwood, D. I., Sobiesierski, Z., Matthai, C. C., Steimetz, E., Zettler, T. and Richter, W. 1998. Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16(4), pp. 2358-2366. (10.1116/1.590175)
- Sobiesierski, Z. and Westwood, D. I. 1998. Reflectance anisotropy spectroscopy and the growth of low-dimensional materials. Thin Solid Films 318(1-2), pp. 140-147. (10.1016/S0040-6090(97)01153-X)
- Sobiesierski, Z., Westwood, D. I. and Matthai, C. C. 1998. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces. Journal of Physics: Condensed Matter 10(1), pp. 1-43. (10.1088/0953-8984/10/1/005)
- Westwood, D. I., Sobiesierski, Z., Steimetz, E., Zettler, T. and Richter, W. 1998. On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films. Applied Surface Science 123-24, pp. 347-351. (10.1016/S0169-4332(97)00525-4)
- Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z. and Westwood, D. I. 1998. Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. Applied Surface Science 123-24, pp. 313-318. (10.1016/S0169-4332(97)00454-6)
1997
- Sobiesierski, Z., Westwood, D. I. and Elliott, M. 1997. Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field. Physical Review B: Condensed Matter and Materials Physics 56(23), pp. 15277-15281. (10.1103/PhysRevB.56.15277)
- Ozanyan, K. B., Parbrook, P. J., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z. and Westwood, D. I. 1997. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. Journal of Applied Physics 82(1), pp. 474-476. (10.1063/1.365585)
- Sobiesierski, Z., Westwood, D. I., Parbrook, P. J., Ozanyan, K. B., Hopkinson, M. and Whitehouse, C. R. 1997. As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. Applied Physics Letters 70(11), pp. 1423-1425. (10.1063/1.118595)
1996
- Sobiesierski, Z., Westwood, D. I. and Woolf, D. 1996. Reflectance anisotropy spectroscopy study of GaAs overlayer growth on submonolayer coverages of Si on the GaAs(001)-c(4x4) surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14(4), pp. 3065-3069. (10.1116/1.589065)
- Steimetz, E., Zettler, J. T., Richter, W., Westwood, D. I., Woolf, D. A. and Sobiesierski, Z. 1996. Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14(4), pp. 3058-3064. (10.1116/1.589064)
- Lees, A. K., Zhang, J., Sobiesierski, Z., Taylor, A. G., Xie, M. H., Joyce, B. and Westwood, D. I. 1996. New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy. Presented at: 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, 21-26 July 1996 Presented at Scheffler, M. and Zimmermann, R. eds.The Physics of Semiconductors: Proceedings of the 23rd International Conference on the Physics of Semiconductors, ICPS, Berlin, 21-26 July 1996, Vol. 2. Singapore: World Scientific Publishing pp. 955-958.
- Steimetz, E. et al. 1996. In-Situ Control of InAs Quantum Dot Evolution in MBE, MOVPE and MOMBE. Presented at: 23rd International conference on the physics of semiconductors., Berliin, Germany, 21-26 July 1996 Presented at Lockwoood, D. J., Scheffler, M. and Zimmermann, R. eds.23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21-26, 1996 (Proceedings). Vol. 3800. World Scientific pp. 1297 -1300.
1995
- Sobiesierski, Z. 1995. Application of photoluminescence spectroscopy to semiconductor surfaces and interfaces. In: McGilp, J. F., Weaire, D. and Patterson, C. eds. Epioptics: Linear and Nonlinear Optical Spectroscopy of Surfaces and Interfaces. ESPRIT Basic Research Series Berlin: Springer, pp. 133-162.
1994
- Williams, J. P., Westwood, D. I., Sobiesierski, Z. and Aubrey, J. E. 1994. Growth optimization of n‐type GaAs on GaAs(201) substrates. Journal of Applied Physics 76(1), pp. 612-614. (10.1063/1.357056)
1993
- Sobiesierski, Z. and Clegg, J. B. 1993. Evidence for hydrogen accumulation at strained layer heterojunctions. Applied Physics Letters 63(7), pp. 926-928. (10.1063/1.110775)
- Sobiesierski, Z., Westwood, D. I., Woolf, D. A., Fukui, T. and Hasegawa, H. 1993. Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 11(4), pp. 1723-1726. (10.1116/1.586469)
- Woolf, D. A., Williams, J. P., Westwood, D. I., Sobiesierski, Z., Aubrey, J. E. and Williams, R. H. 1993. The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth 127(1-4), pp. 913-917. (10.1016/0022-0248(93)90759-P)
- Quagliano, L. G. and Sobiesierski, Z. 1993. Raman scattering as a probe of the tensile strain distribution in GaAs grown on Si(111) by molecular beam epitaxy. Superlattices and Microstructures 13(1), pp. 105-108. (10.1006/spmi.1993.1021)
1992
- Capizzi, M. et al. 1992. Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells. Journal of Applied Physics 72(4), pp. 1454-1459. (10.1063/1.351707)
- Sobiesierski, Z., Woolf, D. A., Frova, A. and Phillips, R. T. 1992. Photoluminescence and photoluminescence excitation spectroscopy of H‐related defects in strained InxGa1−xAs/GaAs(100) quantum wells. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 10(4), pp. 1975-1979. (10.1116/1.586169)
- Woolf, D. A., Sobiesierski, Z., Westwood, D. I. and Williams, R. H. 1992. The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies. Journal of Applied Physics 71(10), pp. 4908-4915. (10.1063/1.350638)
- Sobiesierski, Z., Clark, S. A. and Williams, R. H. 1992. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Surface Science 56-58(2), pp. 703-707. (10.1016/0169-4332(92)90325-R)
- Sobiesierski, Z., Woolf, D. A., Westwood, D. I., Frova, A. and Coluzza, C. 1992. Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation. Solid State Communications 81(1), pp. 125-128. (10.1016/0038-1098(92)90585-W)
- Sobiesierski, Z. and Westwood, D. I. 1992. Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface. Superlattices and Microstructures 12(2), pp. 267-271. (10.1016/0749-6036(92)90350-E)
- Sobiesierski, Z., Woolf, D. A. and Westwood, D. I. 1992. Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states. Superlattices and Microstructures 12(2), pp. 261-265. (10.1016/0749-6036(92)90349-A)
- Williams, P., Westwood, D. I., Sobiesierski, Z. and Aubrey, E. 1992. The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies. Presented at: 21st International Conference on the Physics of Semiconductors, Beijing, China, 10-14 August 1992 Presented at Jiang, P. and Zheng, H. eds.Proceedings of the 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. Singapore: World Scientific Publishing
1991
- Sobiesierski, Z. et al. 1991. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Physics Letters 58(17), pp. 1863-1865. (10.1063/1.105055)
- Sobiesierski, Z., Woolf, D. A., Westwood, D. I. and Williams, R. H. 1991. Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters 58(6), pp. 628-630. (10.1063/1.104550)
- Tabata, A. et al. 1991. Surface InAs/InP quantum wells: epitaxial growth and characterization. Presented at: 3rd International Conference on Indium Phosphide and Related Materials, Cardiff, UK, 8-11 April 1991Indium Phosphide and Related Materials, 3rd International Conference, Cardiff, UK, 8-11 Apr 1991. New York: IEEE pp. 496-499., (10.1109/ICIPRM.1991.147421)
1990
- Wolverson, D., Sobiesierski, Z. and Phillips, R. T. 1990. The dependence of CW photoluminescence on excitation energy in a-P. Journal of Physics: Condensed Matter 2(30), pp. 6433-6437. (10.1088/0953-8984/2/30/008)
- Sobiesierski, Z., Forsyth, N. M., Dharmadasa, I. M. and Williams, R. H. 1990. Use of x-ray photoelectron spectroscopy to investigate the deposition of metaloverlayers onto the clean cleaved CdS surface. Surface Science 231(1-2), pp. 98-102. (10.1016/0039-6028(90)90697-7)
- Sobiesierski, Z., Dharmadasa, I. M. and Williams, R. H. 1990. Photoluminescence as a probe of semiconductor surfaces: CdTe and CdS. Journal of Crystal Growth 101(1-4), pp. 599-602. (10.1016/0022-0248(90)91044-Q)
- Sobiesierski, Z., Woolf, D. A., Westwood, D. I. and Williams, R. H. 1990. Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100). Materials Science and Engineering: B 5(2), pp. 275-278. (10.1016/0921-5107(90)90068-M)
- Sobiesierski, Z., Westwood, D. I. and Williams, R. H. 1990. Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy. Materials Science and Engineering: B 5(2), pp. 265-268. (10.1016/0921-5107(90)90066-K)
- Sobiesierski, Z., Woolf, D. A., Westwood, D. I. and Williams, R. H. 1990. Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy. Superlattices and Microstructures 7(4), pp. 419-421. (10.1016/0749-6036(90)90237-2)
- Sobiesierski, Z., Woolf, D. A., Westwood, D. I. and Williams, R. H. 1990. Photoluminescence measurements for GaAS grown on SI(100) and SI(111) by molecular-beam epitaxy. Presented at: 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 6-10 August 1990 Presented at Joannopoulos, J. D. and Anastassakis, E. eds.20th International Conference on the Physics of Semiconductors (ICPS), Thessaloniki, Greece, Aug. 6-10 1990. London: World Scientific Publishing pp. 1081-1084.
1989
- Williams, R. H., Forsyth, N. M., Dharmadasa, I. M. and Sobiesierski, Z. 1989. Metal contacts to II-VI semiconductors: CdS and CdTe. Applied Surface Science 41-2, pp. 189-194. (10.1016/0169-4332(89)90055-X)
- Forsyth, N. M., Dharmadasa, I. M., Sobiesierski, Z. and Williams, R. H. 1989. Schottky barriers to CdS and their importance in Schottky barrier theories. Semiconductor Science and Technology 4(1), pp. 57-59. (10.1088/0268-1242/4/1/011)
1988
- Sobiesierski, Z., Dharmadasa, I. M. and Williams, R. H. 1988. Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces. Applied Physics Letters 53(26), pp. 2623-2625. (10.1063/1.100178)
- Forsyth, N. M., Dharmadasa, I. M., Sobiesierski, Z. and Williams, R. H. 1988. An investigation of metal contacts to II–VI compounds: CdTe and CdS. Vacuum 38(4-5), pp. 369-371. (10.1016/0042-207X(88)90081-4)
1987
- Phillips, R. T. and Sobiesierski, Z. 1987. Recombination in amorphous red phosphorus. Journal of Physics C: Solid State Physics 20(27), pp. 4259-4269. (10.1088/0022-3719/20/27/006)
- Phillips, R. T., Sobiesierski, Z., Toner, W. T., Barr, J. R. M. and Langley, A. J. 1987. Initial photoluminescence decay rates in amorphous phosphorus. Solid State Communications 63(6), pp. 481-484. (10.1016/0038-1098(87)90275-4)
- Sobiesierski, Z. and Phillips, R. T. 1987. Time-resolved photoluminescence in amorphous phosphorus. Journal of Non-Crystalline Solids 90(1-3), pp. 457-460. (10.1016/S0022-3093(87)80463-5)
1986
- Sobiesierski, Z. and Phillips, R. T. 1986. A time-resolved photoluminescence study of amorphous phosphorus. Solid State Communications 60(1), pp. 25-29. (10.1016/0038-1098(86)90008-6)
Articles
- Westwood, D. I., Sobiesierski, Z. and Matthai, C. C. 1999. The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science 144-45, pp. 484-487. (10.1016/S0169-4332(98)00845-9)
- Quagliano, L. G., Sobiesierski, Z., Orani, D. and Ricci, A. 1999. Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures. Physica B: Condensed Matter 263-64, pp. 775-778. (10.1016/S0921-4526(98)01460-4)
- Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z. and Westwood, D. I. 1998. Optical monitoring of InP monolayer growth rates. Applied Physics Letters 73(3), pp. 345-347. (10.1063/1.121829)
- Westwood, D. I., Sobiesierski, Z., Matthai, C. C., Steimetz, E., Zettler, T. and Richter, W. 1998. Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16(4), pp. 2358-2366. (10.1116/1.590175)
- Sobiesierski, Z. and Westwood, D. I. 1998. Reflectance anisotropy spectroscopy and the growth of low-dimensional materials. Thin Solid Films 318(1-2), pp. 140-147. (10.1016/S0040-6090(97)01153-X)
- Sobiesierski, Z., Westwood, D. I. and Matthai, C. C. 1998. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces. Journal of Physics: Condensed Matter 10(1), pp. 1-43. (10.1088/0953-8984/10/1/005)
- Westwood, D. I., Sobiesierski, Z., Steimetz, E., Zettler, T. and Richter, W. 1998. On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films. Applied Surface Science 123-24, pp. 347-351. (10.1016/S0169-4332(97)00525-4)
- Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z. and Westwood, D. I. 1998. Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. Applied Surface Science 123-24, pp. 313-318. (10.1016/S0169-4332(97)00454-6)
- Sobiesierski, Z., Westwood, D. I. and Elliott, M. 1997. Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field. Physical Review B: Condensed Matter and Materials Physics 56(23), pp. 15277-15281. (10.1103/PhysRevB.56.15277)
- Ozanyan, K. B., Parbrook, P. J., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z. and Westwood, D. I. 1997. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. Journal of Applied Physics 82(1), pp. 474-476. (10.1063/1.365585)
- Sobiesierski, Z., Westwood, D. I., Parbrook, P. J., Ozanyan, K. B., Hopkinson, M. and Whitehouse, C. R. 1997. As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. Applied Physics Letters 70(11), pp. 1423-1425. (10.1063/1.118595)
- Sobiesierski, Z., Westwood, D. I. and Woolf, D. 1996. Reflectance anisotropy spectroscopy study of GaAs overlayer growth on submonolayer coverages of Si on the GaAs(001)-c(4x4) surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14(4), pp. 3065-3069. (10.1116/1.589065)
- Steimetz, E., Zettler, J. T., Richter, W., Westwood, D. I., Woolf, D. A. and Sobiesierski, Z. 1996. Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14(4), pp. 3058-3064. (10.1116/1.589064)
- Williams, J. P., Westwood, D. I., Sobiesierski, Z. and Aubrey, J. E. 1994. Growth optimization of n‐type GaAs on GaAs(201) substrates. Journal of Applied Physics 76(1), pp. 612-614. (10.1063/1.357056)
- Sobiesierski, Z. and Clegg, J. B. 1993. Evidence for hydrogen accumulation at strained layer heterojunctions. Applied Physics Letters 63(7), pp. 926-928. (10.1063/1.110775)
- Sobiesierski, Z., Westwood, D. I., Woolf, D. A., Fukui, T. and Hasegawa, H. 1993. Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 11(4), pp. 1723-1726. (10.1116/1.586469)
- Woolf, D. A., Williams, J. P., Westwood, D. I., Sobiesierski, Z., Aubrey, J. E. and Williams, R. H. 1993. The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth 127(1-4), pp. 913-917. (10.1016/0022-0248(93)90759-P)
- Quagliano, L. G. and Sobiesierski, Z. 1993. Raman scattering as a probe of the tensile strain distribution in GaAs grown on Si(111) by molecular beam epitaxy. Superlattices and Microstructures 13(1), pp. 105-108. (10.1006/spmi.1993.1021)
- Capizzi, M. et al. 1992. Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells. Journal of Applied Physics 72(4), pp. 1454-1459. (10.1063/1.351707)
- Sobiesierski, Z., Woolf, D. A., Frova, A. and Phillips, R. T. 1992. Photoluminescence and photoluminescence excitation spectroscopy of H‐related defects in strained InxGa1−xAs/GaAs(100) quantum wells. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 10(4), pp. 1975-1979. (10.1116/1.586169)
- Woolf, D. A., Sobiesierski, Z., Westwood, D. I. and Williams, R. H. 1992. The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies. Journal of Applied Physics 71(10), pp. 4908-4915. (10.1063/1.350638)
- Sobiesierski, Z., Clark, S. A. and Williams, R. H. 1992. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Surface Science 56-58(2), pp. 703-707. (10.1016/0169-4332(92)90325-R)
- Sobiesierski, Z., Woolf, D. A., Westwood, D. I., Frova, A. and Coluzza, C. 1992. Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation. Solid State Communications 81(1), pp. 125-128. (10.1016/0038-1098(92)90585-W)
- Sobiesierski, Z. and Westwood, D. I. 1992. Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface. Superlattices and Microstructures 12(2), pp. 267-271. (10.1016/0749-6036(92)90350-E)
- Sobiesierski, Z., Woolf, D. A. and Westwood, D. I. 1992. Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states. Superlattices and Microstructures 12(2), pp. 261-265. (10.1016/0749-6036(92)90349-A)
- Sobiesierski, Z. et al. 1991. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Physics Letters 58(17), pp. 1863-1865. (10.1063/1.105055)
- Sobiesierski, Z., Woolf, D. A., Westwood, D. I. and Williams, R. H. 1991. Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters 58(6), pp. 628-630. (10.1063/1.104550)
- Wolverson, D., Sobiesierski, Z. and Phillips, R. T. 1990. The dependence of CW photoluminescence on excitation energy in a-P. Journal of Physics: Condensed Matter 2(30), pp. 6433-6437. (10.1088/0953-8984/2/30/008)
- Sobiesierski, Z., Forsyth, N. M., Dharmadasa, I. M. and Williams, R. H. 1990. Use of x-ray photoelectron spectroscopy to investigate the deposition of metaloverlayers onto the clean cleaved CdS surface. Surface Science 231(1-2), pp. 98-102. (10.1016/0039-6028(90)90697-7)
- Sobiesierski, Z., Dharmadasa, I. M. and Williams, R. H. 1990. Photoluminescence as a probe of semiconductor surfaces: CdTe and CdS. Journal of Crystal Growth 101(1-4), pp. 599-602. (10.1016/0022-0248(90)91044-Q)
- Sobiesierski, Z., Woolf, D. A., Westwood, D. I. and Williams, R. H. 1990. Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100). Materials Science and Engineering: B 5(2), pp. 275-278. (10.1016/0921-5107(90)90068-M)
- Sobiesierski, Z., Westwood, D. I. and Williams, R. H. 1990. Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy. Materials Science and Engineering: B 5(2), pp. 265-268. (10.1016/0921-5107(90)90066-K)
- Sobiesierski, Z., Woolf, D. A., Westwood, D. I. and Williams, R. H. 1990. Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy. Superlattices and Microstructures 7(4), pp. 419-421. (10.1016/0749-6036(90)90237-2)
- Williams, R. H., Forsyth, N. M., Dharmadasa, I. M. and Sobiesierski, Z. 1989. Metal contacts to II-VI semiconductors: CdS and CdTe. Applied Surface Science 41-2, pp. 189-194. (10.1016/0169-4332(89)90055-X)
- Forsyth, N. M., Dharmadasa, I. M., Sobiesierski, Z. and Williams, R. H. 1989. Schottky barriers to CdS and their importance in Schottky barrier theories. Semiconductor Science and Technology 4(1), pp. 57-59. (10.1088/0268-1242/4/1/011)
- Sobiesierski, Z., Dharmadasa, I. M. and Williams, R. H. 1988. Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces. Applied Physics Letters 53(26), pp. 2623-2625. (10.1063/1.100178)
- Forsyth, N. M., Dharmadasa, I. M., Sobiesierski, Z. and Williams, R. H. 1988. An investigation of metal contacts to II–VI compounds: CdTe and CdS. Vacuum 38(4-5), pp. 369-371. (10.1016/0042-207X(88)90081-4)
- Phillips, R. T. and Sobiesierski, Z. 1987. Recombination in amorphous red phosphorus. Journal of Physics C: Solid State Physics 20(27), pp. 4259-4269. (10.1088/0022-3719/20/27/006)
- Phillips, R. T., Sobiesierski, Z., Toner, W. T., Barr, J. R. M. and Langley, A. J. 1987. Initial photoluminescence decay rates in amorphous phosphorus. Solid State Communications 63(6), pp. 481-484. (10.1016/0038-1098(87)90275-4)
- Sobiesierski, Z. and Phillips, R. T. 1987. Time-resolved photoluminescence in amorphous phosphorus. Journal of Non-Crystalline Solids 90(1-3), pp. 457-460. (10.1016/S0022-3093(87)80463-5)
- Sobiesierski, Z. and Phillips, R. T. 1986. A time-resolved photoluminescence study of amorphous phosphorus. Solid State Communications 60(1), pp. 25-29. (10.1016/0038-1098(86)90008-6)
Book sections
- Sobiesierski, Z. 1995. Application of photoluminescence spectroscopy to semiconductor surfaces and interfaces. In: McGilp, J. F., Weaire, D. and Patterson, C. eds. Epioptics: Linear and Nonlinear Optical Spectroscopy of Surfaces and Interfaces. ESPRIT Basic Research Series Berlin: Springer, pp. 133-162.
Conferences
- Lees, A. K., Zhang, J., Sobiesierski, Z., Taylor, A. G., Xie, M. H., Joyce, B. and Westwood, D. I. 1996. New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy. Presented at: 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, 21-26 July 1996 Presented at Scheffler, M. and Zimmermann, R. eds.The Physics of Semiconductors: Proceedings of the 23rd International Conference on the Physics of Semiconductors, ICPS, Berlin, 21-26 July 1996, Vol. 2. Singapore: World Scientific Publishing pp. 955-958.
- Steimetz, E. et al. 1996. In-Situ Control of InAs Quantum Dot Evolution in MBE, MOVPE and MOMBE. Presented at: 23rd International conference on the physics of semiconductors., Berliin, Germany, 21-26 July 1996 Presented at Lockwoood, D. J., Scheffler, M. and Zimmermann, R. eds.23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21-26, 1996 (Proceedings). Vol. 3800. World Scientific pp. 1297 -1300.
- Williams, P., Westwood, D. I., Sobiesierski, Z. and Aubrey, E. 1992. The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies. Presented at: 21st International Conference on the Physics of Semiconductors, Beijing, China, 10-14 August 1992 Presented at Jiang, P. and Zheng, H. eds.Proceedings of the 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. Singapore: World Scientific Publishing
- Tabata, A. et al. 1991. Surface InAs/InP quantum wells: epitaxial growth and characterization. Presented at: 3rd International Conference on Indium Phosphide and Related Materials, Cardiff, UK, 8-11 April 1991Indium Phosphide and Related Materials, 3rd International Conference, Cardiff, UK, 8-11 Apr 1991. New York: IEEE pp. 496-499., (10.1109/ICIPRM.1991.147421)
- Sobiesierski, Z., Woolf, D. A., Westwood, D. I. and Williams, R. H. 1990. Photoluminescence measurements for GaAS grown on SI(100) and SI(111) by molecular-beam epitaxy. Presented at: 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 6-10 August 1990 Presented at Joannopoulos, J. D. and Anastassakis, E. eds.20th International Conference on the Physics of Semiconductors (ICPS), Thessaloniki, Greece, Aug. 6-10 1990. London: World Scientific Publishing pp. 1081-1084.
Research
Rydw i wedi siarad am bynciau sy’n cynnwys:
- gweld yw credu?
- laserau’n goleuo’r ffordd
- hylifau gwych, gwyddoniaeth llysnafedd
- nanodechnoleg - realiti gwyddoniaeth ar raddfa fach
- delweddu meddygol a'r corff dynol
- cyfathrebu gwyddoniaeth: o arddangosiadau darlith i adloniant tafarn.
Cyhoeddiadau
- Holliman, R., Alderson, K., Barker, S., Forrester, J., a Sobiesierski, Z. (2001) ‘Developing Computer Mediated Discussions in Distance-Learning Education: Facilitating Online Conferences’, Proc.of 3rd Int. Conf. On Science education Research in the Knowledge Based Society (Thessaloniki), cyf. 1, tt. 441-443.
- Sobiesierski, Z. (2001) ‘Communicating physics on tour’, Physics Education 36, tt. 23-29.
- Westwood, D.I., Sobiesierski, Z. a Matthai, C.C. (1999) ‘The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects’, Appl. Surf. Sci. 145, tt. 484-490.
- Sobiesierski, Z. (1999) ‘Selling Science ?’, Wavelength 23, 14-15.
- Quagliano, L.G., Sobiesierski, Z., Orani, D. a Ricci, A. (1999) ‘Phonon study of temperature evolution of strain in GaAs/Si(001) and GaAs/Si(111) heterostructures’, Physica B267, tt. 775-778.
- Sobiesierski, Z. (1998) ‘Simulations for solid state physics’, Computers in Physics Education 16, tt. 8-12.
- Sobiesierski, Z., Westwood, D.I. a Matthai, C.C. (1998) ‘Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces’, J. Phys. Condens. Matt. 10, tt. 1-41.
- Westwood, D.I., Sobiesierski, Z., Matthai, C.C., Steimetz, E., Zettler, T. a Richter, W. (1998) ‘Processes of quantum dot formation in the InAs on GaAs(001) system: a reflectance anisotropy spectroscopy study’, J. Vac. Sci. Technol. B16, tt. 2358-2366.
- Parbrook, P.J., Ozanyan, K.B., Hopkinson, M., Whitehouse, C.R., Sobiesierski, Z. a Westwood, D.I. (1998) ‘Optical monitoring of InP monolayer growth rates’, Appl. Phys. Lett. 73, tt. 345-347.
- Westwood, D.I., Sobiesierski, Z, Steimetz, E., Zettler, J.T. a Richter, W. (1998) ‘On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films’, Appl. Surf. Sci. 123, tt. 347-351.
- Parbrook, P.J., Ozanyan, K.B., Hopkinson, M., Whitehouse, C.R., Sobiesierski, Z. a Westwood, D.I. (1998) ‘Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy’, Appl. Surf Sci. 123, tt. 313-318.
- Sobiesierski, Z. a Westwood, D.I. (1998) ‘Reflectance anisotropy spectroscopy and the growth of low-dimensional materials’, Thin Solid Films 318, tt. 140-147.
- Sobiesierski, Z., Westwood, D.I. ac Elliott, M. (1997) ‘Reflectance anisotropy spectra from Si ?-doped GaAs(001): correlation of linear electro-optic effect with integrated surface field’, Phys. Rev. B-Condensed Matter 56, tt. 15277-15281.
- Parbrook, P.J., Ozanyan, K.B., Hopkinson, M., Whitehouse, C.R., Sobiesierski, Z. a Westwood, D.I. (1997) ‘In-situ monitoring of the surface reconstructions of InP(001) prepared by molecular beam epitaxy’, J. Appl. Phys. 82, tt. 474-476.
- Sobiesierski, Z., Westwood, D.I., Parbrook, P.J., Ozanyan, K.B., Hopkinson, M. a Whitehouse, C.R. (1997) ‘As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy’, Appl. Phys. Lett. 70, tt. 1423-1425.
- Zhang, J., Lees, A.K., Taylor, A.G., Xie, M.H., Joyce, B.A., Sobiesierski, Z. a Westwood, D.I. (1996) ‘New hydrogen desorption kinetics from vicinal Si(001) surfaces observed by reflectance anisotropy’, Proc. Of MBE9, Malibu, J. Cryst. Growth.
- Steimetz, E., Schienle, F., Zettler, J.T., Richter, W., Westwood, D., Sobiesierski, Z., Matthai, C., Junno, B., Miller, M. a Samuelson, L. (1996) ‘In-situ control of InAs quantum dot evolution in MBE, MOVPE and MOMBE’, Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin (World Scientific) tt. 1297-1300.
- Lees, A.K., Zhang, J., Sobiesierski, Z., Taylor, A.G., Xie, M.H., Joyce, B.A. ac Westwood, D.I. (1996) ‘New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy’, Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin (World Scientific) tt. 955-958.
- Sobiesierski, Z., Westwood, D.I. ac Woolf, D.A. (1996) ‘Reflectance anisotropy spectroscopy study of GaAs overlayer growth on sub-monolayer coverages of Si on the GaAs(001)-c(4×4) surface’, J. Vac. Sci. Technol. B14, tt. 3065-3069.
- Steimetz, E., Zettler, T., Richter, W., Westwood, D.I., Woolf, D.A. a Sobiesierski, Z. (1996) ‘Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy’, J. Vac. Sci. Technol. B14, tt. 3058-3064.
- Sobiesierski, Z. (1995) ‘Application of photoluminescence spectroscopy to semiconductor surfaces and interfaces’ In McGilp, J.F., Weaire, D. and Patterson, C.H. (eds) Epioptics: linear and nonlinear optical spectroscopy of surfaces and interfaces, Berlin, Springer-Verlag, tt. 133-162.
- Williams, J.P., Westwood, D.I., Sobiesierski, Z. ac Aubrey, J.E. (1994) ‘Growth optimisation of n-type GaAs on GaAs(201) substrates’, J. Appl. Phys. 76, tt. 612-614.
- Sobiesierski, Z. a Clegg, J.B. (1993) ‘Evidence for hydrogen accumulation at strained layer heterojunctions’, Appl. Phys. Lett. 63, tt. 926-928.
- Sobiesierski, Z., Westwood, D.I., Woolf, D.A., Fukui, T. ac Hasegawa, H. (1993) ‘Photoluminescence spectroscopy of near-surface quantum wells: electronic coupling between quantised energy levels and the sample surface’, J. Vac. Sci. Technol. B11, tt. 1723-1726.
- Woolf, D.A., Williams, J.P., Westwood, D.I., Sobiesierski, Z., Aubrey, J.E. a Williams, R.H. (1993) ‘The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies’, J. Cryst. Growth 127, tt. 913-917.
- Quagliano, L.G. a Sobiesierski, Z. (1993) ‘Raman scattering as a probe of the tensile strain distribution in GaAs grown on Si(111) by molecular beam epitaxy’, Superlatt. and Microstruct. 13, tt. 105-108.
- Williams, J.P., Westwood, D.I., Sobiesierski, Z. ac Aubrey, J.E. (1992) ‘The molecular beam epitaxial growth of GaAs/GaAs(201); doping and growth temperature studies’, Proc. of 21st Int. Conf. on the Physics of Semiconductors, Beijing (World Scientific).
- Sobiesierski, Z. a Westwood, D.I. (1992) ‘Coupling between near-surface InGaAs/GaAs(100) quantum wells and the sample surface’, Superlatt. and Microstruct. 12, tt. 267-271.
- Sobiesierski, Z., Woolf, D.A. a Westwood, D.I. (1992) ‘Incorporation of H into InGaAs/GaAs(100) quantum wells:optical spectroscopy of H-related radiative states’, Superlatt. and Microstruct. 12, tt. 261-265.
- Sobiesierski, Z., Woolf, D.A., Frova, A. a Phillips, R.T. (1992) ‘Photoluminescence and photoluminescence excitation spectroscopy of H-related defects in strained InGaAs/GaAs(100) quantum wells’, J. Vac. Sci. Technol. B10, tt. 1975-1979.
- Capizzi, M., Coluzza, C., Emiliani, V., Frankl, P., Frova, A., Sarto, F., Bonapasta, A.A., Sobiesierski, Z. a Sacks, R.N. (1992) ‘Hydrogen activated radiative states in GaAs/AlGaAs heterostructures and InGaAs/GaAs multiquantum wells’, J. Appl. Phys. 72, tt. 1454-1459.
- Woolf, D.A., Sobiesierski, Z., Westwood, D.I. ac Williams, R.H. (1992) ‘The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies’, J. Appl. Phys. 71, tt. 4908-4915.
- Sobiesierski, Z., Clark, S.A., Williams, R.H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G. a Viktorovitch, P. (1991) ‘Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy’, Proc. of ESPRIT Conf.
- Sobiesierski, Z., Woolf, D.A., Westwood, D.I., Frova, A. a Coluzza, C. (1992) ‘Creation of radiative hydrogen-related states within strained InGaAs/GaAs quantum wells by hydrogenation’, Sol. Stat. Commun. 81, tt. 125-128.
- Sobiesierski, Z., Clark, S.A., Williams, R.H. (1992) ‘Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy’, Appl. Surf. Sci. 56–58, tt. 703-707.
- Tabata, A., Benyattou, T., Guillot, G., Sobiesierski, Z., Clark, S.A., Williams, R.H., Gendry, M., Hollinger, G. a Viktorovitch, P. (1991) ‘Surface InAs/InP quantum wells: epitaxial growth and characterisation’, Proc. of 3rd Int. Conf. on InP and Related Materials, Caerdydd.
- Sobiesierski, Z., Clark, S.A., Williams, R.H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G. a Viktorovitch, P. (1991) ‘Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy’, Appl. Phys. Lett. 58, tt. 1863-1865.
- Sobiesierski, Z., Woolf, D.A., Westwood, D.I. a Williams, R.H. (1991) ‘Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy’, Appl. Phys. Lett. 58, tt. 628-630.
- Sobiesierski, Z., Woolf, D.A., Westwood, D.I. a Williams, R.H. (1990) ‘Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy’, Proc. of 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki (World Scientific) tt. 1081-1084.
- Sobiesierski, Z., Woolf, D.A., Westwood, D.I. a Williams, R.H. (1990) ‘Variation of strain in single and multilayer InGaAs structures grown on Si(100) and Si(111) by molecular beam epitaxy’, Superlatt. and Micostruct. 7, tt. 419-421.
- Wolverson, D., Sobiesierski, Z. a Phillips, R.T. (1990) ‘The dependence of c.w. photoluminescence on excitation energy in a –P’, J. Phys: Condens. Matt. 2, tt. 6433-6437.
- Sobiesierski, Z., Dharmadasa, I.M. a Williams, R.H. (1990) ‘Photoluminescence as a probe of semiconductor surfaces: CdTe and CdS’, J. Cryst. Growth 101, tt. 599-602.
- Sobiesierski, Z., Woolf, D.A., Westwood, D.I. a Williams, R.H. (1990) ‘Characterisation of GaAs buffer layers 0.1 um thick grown on Si(100)’, Mat. Sci. Eng. B5, tt. 275-278.
- Sobiesierski, Z., Westwood, D.I. a Williams, R.H. (1990) ‘Raman scattering from InGaAs grown on GaAs(001) by molecular beam epitaxy’, Mat. Sci. Eng. B5, tt. 265-268.
- Sobiesierski, Z., Forsyth, N.M., Dharmadasa, I.M. a Williams, R.H. (1990) ‘Use of x-ray photoelectron spectroscopy to investigate the deposition of metal overlayers onto the clean cleaved CdS surface’, Surf. Sci. 231, tt. 98-102.
- Williams, R.H., Thornton, J.M.C., Sobiesierski, Z. ac Wilks, S.P. (1990) ‘Passivating layers and interface reactions on semiconductors studied by surface science techniques’, Sol. Stat. Elect. 33, tt. 97-106.
- Forsyth, N.M., Dharmadasa, I.M., Sobiesierski, Z. ac Williams, R.H. (1989) ‘Schottky barriers to CdS and their importance in schottky barrier theories’, Semicond. Sci. Technol. 4, tt. 57-59.
- Williams, R.H., Forsyth, N., Dharmadasa, I.M. a Sobiesierski, Z. (1989) ‘Metal contacts to II-VI semiconductors: CdS and CdTe’, Appl. Surf. Sci. 41/42, tt. 189-194.
- Sobiesierski, Z., Dharmadasa, I.M. a Williams, R.H. (1988) ‘Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces’, Appl. Phys. Lett. 53, tt 2623-2625.
- Forsyth, N.M., Dharmadasa, I.M., Sobiesierski, Z. ac Williams, R.H. (1988) ‘An investigation of metal contacts to II-VI compounds: CdTe and CdS’, Vacuum 38, tt. 369-371.
- Phillips, R.T. a Sobiesierski, Z. (1987) ‘Recombination in amorphous red phosphorus’, J. Phys. C20, tt. 4259-4269.
- Sobiesierski, Z. a Phillips, R.T. (1987) ‘Time-resolved photoluminescence in amorphous phosphorus’, J. Non-Cryst. Solids 90, tt. 457-460.
- Phillips, R.T., Sobiesierski, Z., Toner, W.T., Barr, J.R.M. and Langley, A.J. (1987) ‘Initial photoluminescence decay rates in amorphous phosphorus’, Sol. Stat. Commun. 63, tt. 481-483.
- Sobiesierski, Z. a Phillips, R.T. (1986) ‘A time-resolved study of amorphous phosphorus’, Sol. Stat. Commun. 60, tt. 25-29.
Biography
Cefais fy ngeni a’m magu yn Abertawe, ond gadewais fy nhref enedigol a symudais i Brifysgol Caerwysg i gael fy ngradd a’m doethuriaeth mewn ffiseg.
Ar ôl dychwelyd i Gymru yn 1986, fe wnes i ymchwil yn yr Ysgol Ffiseg a Seryddiaeth ym Mhrifysgol Caerdydd. Yna gadewais ym 1992 i fod Athro Cyswllt cyntaf Hitachi mewn Electroneg Deunyddiau Cwantwm yng Nghanolfan Ymchwil Electroneg Rhyngwyneb Cwantwm, Prifysgol Hokkaido, Sapporo, Japan.
Ers dychwelyd i’r DU, rwyf wedi bod yn ddarlithydd yn yr Ysgol Ffiseg a Seryddiaeth ym Mhrifysgol Caerdydd (1993-1996), wedi astudio am MSc mewn Cyfathrebu Gwyddoniaeth yn Techniquest, ac wedi darlithio ar y cwrs BA mewn Gwyddoniaeth, y Gymdeithas a’r Cyfryngau ym Mhrifysgol Gorllewin Lloegr.
Ymunais â’ tîm Datblygiad Proffesiynol a Parhaus ym 1999, ac rydw i wedi cyflwyno darlithoedd arddangos a gweithdai ffiseg ar gyfathrebu gwyddoniaeth yn y DU, Iwerddon a De Affrica.
Rydw i’n dal i gredu’n gryf mewn ‘mynd â gwyddoniaeth at y bobl'.
Anrhydeddau a dyfarniadau
Gwobr y Sefydliad Ffiseg am Ymwybyddiaeth y Cyhoedd o Ffiseg (2001)
Aelodaethau proffesiynol
- Aelod o’r Sefydliad Ffiseg (MInstP); Ffisegydd Siartredig (CPhys)
- Arweinyddiaeth Ymarferol ar gyfer Rheolaeth Prifysgol – ILM (2008)
- Cadeirydd, Sefydliad Ffiseg Cymru (2005-2008), a Chadeirydd dros dro (2009 – 2010)
- Aelod o’r Sefydliad Ffiseg a Phwyllgor Rhanbarthau’r Cenhedloedd (2006 – 2010)
- Aelod o Bwyllgor Grantiau Ymgysylltu â’r Cyhoedd y Sefydliad Ffiseg (2001 – 2012)
- Cynghorydd ar gyfer ' Model ar gyfer nodi, hyfforddi, a gwerthuso cyflwynwyr canolfan nad ydynt yn wyddonol mewn canolfan wyddoniaeth allgymorth.', prosiect Arsyllfa Herstmonceux/ Techniquest/ Amgueddfa Wyddoniaeth / wedi’i anelu at gynulleidfa CA2 (2006-08)
- Cynghorydd ar gyfer prosiect ' Peirianneg am Oes ' EPSRC, Ysgol Peirianneg Caerdydd (2004-2008)
- Cadeirydd grŵp llywio Gŵyl Wyddoniaeth Caerdydd (2005)
- Aelod o’r grŵp llywio ar gyfer Gŵyl Wyddoniaeth Cheltenham (2000-2002)
- Ymgynghorydd allanol ar gyfer y dyfarniad arfaethedig mewn BSc Gwyddoniaeth a Ffuglen Wyddonol, Prifysgol Morgannwg (1999).
Anerchiadau
Mae’r uchafbwyntiau’n cynnwys:
- Taith ddarlithio’r Sefydliad Ffiseg i Ysgolion a Cholegau, 1999-2000, (49 o gyflwyniadau, 38 o leoliadau ar draws y DU, tua 8,000 fu cyfanswm y cynulleidfaoedd).
- Darlithoedd Tyndall ar ran y Sefydliad Ffiseg yn Iwerddon, 2001 (8 cyflwyniad, 5 lleoliad, tua 2,500 fu cyfanswm y cynulleidfaoedd).
- Gŵyl Genedlaethol Gwyddoniaeth, Technoleg a Peirianneg yn Ne Affrica (Sasol SciFest), 2001, 2002, 2005, 2006.
- Sasol SciFest-ar-y-Ffordd 2002, taith pythefnos o amgylch KwaZulu-Natal, Free State, Mpumalanga a Thalaith Limpopo yn Ne Affrica, a noddwyd gan Sasol a’r Sefydliad Ffiseg (21 o gyflwyniadau, 17 o leoliadau, tua 6,500 fu cyfanswm y cynulleidfaoedd).
- Wedi’i wahodd i ymddangos yng Ngŵyl Wyddoniaeth Orkney (2003), Gŵyl Wyddoniaeth Cheltenham (2004), Gŵyl Wyddoniaeth Caerdydd (2005), a Gŵyl Wyddoniaeth Wrecsam (2007).
- Darlithydd Rhanbarthol y Sefydliad Brenhinol yn y Gogledd-orllewin (2002 – 2005).
- Philip Allan Updates, Darlithoedd Adolygu Ffiseg Safon Uwch a TGAU (2001 – 2004).
- Cyflwyniadau mewn cyfarfodydd athrawon ffiseg a Phenwythnosau Diweddaru Ffiseg yr IOP.
- Ysgrifennu testun i gyd-fynd â’r nodau tudalen 'Physics on the Buses ', a 'If only they’d known that …' dyfynnu testun i ymddangos ar bosteri penblwydd yr IOP yn 125 oed (1999).
Digwyddiadau allgymorth gwyddoniaeth lleol:
- Beertricks Potting – cabaret gwyddoniaeth mewn tafarndai a chlybiau yn ardal Caerdydd.
- Gwyddoniaeth Man Talu Archfarchnadoedd – bysgio gwyddoniaeth mewn cynteddau archfarchnadoedd yng Nghaerdydd a Bryste.
- Diweddariad Gwyddoniaeth – cynhadledd fach wedi’i threfnu ar gyfer grwpiau gwyddoniaeth Prifysgol y drydedd Oes o bob rhan o dde Cymru.
- Gwyddoniaeth yn y Ddinas: Gŵyl o wyddoniaeth yng Nghaerdydd – prosiect newydd a gychwynnwyd ar gyfer Wythnos Wyddoniaeth Genedlaethol 2001, a oedd yn cynnwys Prifysgol Caerdydd yn gweithio mewn partneriaeth ag: Amgueddfa Genedlaethol Cymru, Techniquest, y Brifysgol Agored yng Nghymru, Cangen De Cymru o’r BA, a Choleg Meddygaeth Prifysgol Cymru.
- Gŵyl Wyddoniaeth Caerdydd– Arweiniodd llwyddiant Gwyddoniaeth yn y Ddinas yn 2001 a 2002 at lwyfannu Gŵyl Wyddoniaeth Caerdydd am y tro cyntaf ym mlwyddyn canmlwyddiant Caerdydd, 2005.
- Dyddiau Gwyddoniaeth y Brifysgol– Menter i godi dyheadau, wedi’i hanelu at ddisgyblion blwyddyn 10 o ysgolion canol dinas nad ydynt yn draddodiadol yn danfon myfyrwyr ymlaen i Addysg Uwch.
Pwyllgorau ac adolygu
- Cadeirydd Bwrdd Rheoli Addysg Barhaus a Phroffesiynol (2012- presennol)
- Cadeirydd y Bwrdd Astudiaethau - (2008 - presennol)
- Cadeirydd y Ganolfan a Byrddau Arholi Diploma (2012- presennol)
- Aelod o Senedd y Brifysgol (2010- presennol)
- Aelod o'r Pwyllgor Safonau ac Ansawdd Academaidd (2010- presennol)
Honours and awards
Institute of Physics Prize for Public Awareness of Physics (2001)
Professional memberships
- Member of the Institute of Physics (MInstP); Chartered Physicist (CPhys)
- Practical Leadership for University Management – ILM (2008)
- Chair, Institute of Physics in Wales (2005-2008), and Acting Chair (2009–2010)
- Member of the Institute of Physics Nations & Regions Committee (2006–2010)
- Member of Institute of Physics Public Engagement Grants committee (2001–2012)
- Adviser for ‘A model for identifying, training, and evaluating non-science centre presenters in science centre outreach.’, a Techniquest/ Science Museum/ Herstmonceux Observatory project aimed at all KS2 audiences (2006-08)
- Adviser for EPSRC ‘Engineering for Life’ project, Cardiff School of Engineering (2004-2008)
- Chair of Cardiff Science Festival Steering Group (2005)
- Member of steering group for Cheltenham Science Festival (2000-2002)
- External consultant for proposed award in BSc Science & Science Fiction, University of Glamorgan (1999).
Committees and reviewing
- Chair of Continuing and Professional Education’s Management Board (2012-current)
- Chair of the Board of Studies (2008-current)
- Chair of the Centre and Diploma Examination Boards (2012-current)
- Member of University Senate (2010-current)
- Member of Academic Standards and Quality Committee (2010-current).