Bogdan Ratiu

Yan, Z., Zhang, W., Ebert, M., Ratiu, B., Reed, G. T., Thomson, D. J. and Li, Q. 2024. Large-area uniform III-V membranes grown on silicon-on-insulator by lateral tunnel epitaxy. Presented at: 2024 IEEE Photonics Conference (IPC), Rome, Italy, 1-14 November 20242024 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC60965.2024.10799698)
Temu, B., Yan, Z., Ratiu, B., Oh, S. S. and Li, Q. 2024. Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates. Applied Physics Letters 125(22), article number: 223501. (10.1063/5.0237589)
Liu, S. et al. 2024. Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon. Applied Physics Letters 125(8), article number: 82102. (10.1063/5.0219507)

Ratiu, B. 2023. Epitaxial III-V on silicon-on-insulator platforms for photonic integration. PhD Thesis, Cardiff University.
Yan, Z. et al. 2023. Lateral tunnel epitaxy of GaAs in lithographically defined cavities on 220 nm silicon-on-insulator. Crystal Growth and Design 23(11), pp. 7821-7828. (10.1021/acs.cgd.3c00633)
Ratiu, B. et al. 2023. Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator. Optics Express 31(22), pp. 36668-36676. (10.1364/OE.499696)
Jia, H. et al. 2023. Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate. Applied Physics Letters 122(11), article number: 111108. (10.1063/5.0142391)
Messina, C. et al. 2023. Deformed honeycomb lattices of InGaAs nanowires grown on silicon-on-insulator for photonic crystal surface-emitting lasers. Advanced Optical Materials 11(5), article number: 2201809. (10.1002/adom.202201809)

Brown, R. et al. 2022. Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD. Journal of Crystal Growth 598, article number: 126860. (10.1016/j.jcrysgro.2022.126860)
Gong, Y., Messina, C., Wong, S., Abouzaid, O., Ratiu, B., Li, Q. and Oh, S. S. 2022. Topological lasers with epitaxially grown InGaAs nanowires on a SOI substrate. Presented at: Conference on Lasers and Electro-Optics, QELS_Fundamental Science 2022, San Jose, US, 15–20 May 2022Conference on Lasers and Electro-Optics. Technical Digest Series San Jose, US: Optica Publishing Group, (10.1364/CLEO_QELS.2022.FF2C.1)

Temu, B., Yan, Z., Ratiu, B., Oh, S. S. and Li, Q. 2024. Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates. Applied Physics Letters 125(22), article number: 223501. (10.1063/5.0237589)
Liu, S. et al. 2024. Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon. Applied Physics Letters 125(8), article number: 82102. (10.1063/5.0219507)
Yan, Z. et al. 2023. Lateral tunnel epitaxy of GaAs in lithographically defined cavities on 220 nm silicon-on-insulator. Crystal Growth and Design 23(11), pp. 7821-7828. (10.1021/acs.cgd.3c00633)
Ratiu, B. et al. 2023. Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator. Optics Express 31(22), pp. 36668-36676. (10.1364/OE.499696)
Jia, H. et al. 2023. Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate. Applied Physics Letters 122(11), article number: 111108. (10.1063/5.0142391)
Messina, C. et al. 2023. Deformed honeycomb lattices of InGaAs nanowires grown on silicon-on-insulator for photonic crystal surface-emitting lasers. Advanced Optical Materials 11(5), article number: 2201809. (10.1002/adom.202201809)
Brown, R. et al. 2022. Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD. Journal of Crystal Growth 598, article number: 126860. (10.1016/j.jcrysgro.2022.126860)

Yan, Z., Zhang, W., Ebert, M., Ratiu, B., Reed, G. T., Thomson, D. J. and Li, Q. 2024. Large-area uniform III-V membranes grown on silicon-on-insulator by lateral tunnel epitaxy. Presented at: 2024 IEEE Photonics Conference (IPC), Rome, Italy, 1-14 November 20242024 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC60965.2024.10799698)
Gong, Y., Messina, C., Wong, S., Abouzaid, O., Ratiu, B., Li, Q. and Oh, S. S. 2022. Topological lasers with epitaxially grown InGaAs nanowires on a SOI substrate. Presented at: Conference on Lasers and Electro-Optics, QELS_Fundamental Science 2022, San Jose, US, 15–20 May 2022Conference on Lasers and Electro-Optics. Technical Digest Series San Jose, US: Optica Publishing Group, (10.1364/CLEO_QELS.2022.FF2C.1)

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