Yr Athro David Wallis

(Translated he/him)

2026

• Frentrup, M. et al., 2026. Effect of nucleation layer growth conditions on the defect structure in MOVPE-grown cubic GaN epitaxial layers. Journal of Applied Physics 140 (3) 035302. (10.1063/5.0334930)
• Binks, D. J. et al., 2026. Recent progress in cubic GaN epilayers and InGaN/GaN quantum wells. Journal of Physics D: Applied Physics 59 (25) 253002. (10.1088/1361-6463/ae7b4e)
• Chatterjee, A. et al., 2026. Low resistivity of Si-doped n -type Al0.68Ga0.32N on sapphire by two-step growth for high power electronics. APL Electronic Devices 2 (2) 026111. (10.1063/5.0324707)
• Dyer, D. et al., 2026. Wide tunability of zincblende InGaN/GaN quantum wells grown by metal–organic vapour phase epitaxy. Journal of Physics D: Applied Physics 59 (11) 115107. (10.1088/1361-6463/ae4ef9)

2025

• Xu, X. et al., 2025. Effect of buffer layer thickness on recombination in zincblende InGaN/GaN quantum wells. Journal of Physics D: Applied Physics 58 (47) 475101. (10.1088/1361-6463/ae1d8d)
• Xu, X. et al., 2025. Point defect luminescence associated with stacking faults in magnesium doped zincblende GaN. Journal of Applied Physics 137 (23) 235301. (10.1063/5.0274599)
• Shu, R. et al., 2025. Beyond transmission electron microscopy imaging: atom probe tomography reveals chemical inhomogeneity at stacking fault interfaces in InGaN/GaN light-emitting diodes. Materialia 40 102417. (10.1016/j.mtla.2025.102417)
• Dyer, D. et al., 2025. Broadly tunable cubic phase InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition.. Presented at: OPTO: Gallium Nitride Materials and Devices XX San Francisco, CA, USA 25-31 January 2025. Published in: Fujioka, H. , Morkoc, H. and Schwarz, U. T. eds. Proceedings Volume 13366, Gallium Nitride Materials and Devices XX. SPIE. (10.1117/12.3039278)
• Ghosh, S. et al., 2025. Buffer-less gallium nitride high electron mobility heterostructures on silicon. Advanced Materials 37 (9) 2413127. (10.1002/adma.202413127)
• Adams, F. et al., 2025. Behaviour of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures at low temperature. Journal of Physics D: Applied Physics 58 (13) 135117. (10.1088/1361-6463/adafb5)

2024

• Shi, C. et al., 2024. A circuit for evaluating GaN HEMT dynamic Rds(on) at cryogenic temperatures. Presented at: 9th Southern Power Electronics Conference (SPEC) Brisbane, Australia 2-5 December 2024. Proceedings of 9th Southern Power Electronics Conference. IEEE. , pp.1-6. (10.1109/spec62217.2024.10893110)
• Gundimeda, A. et al., 2024. Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well. Journal of Physics D: Applied Physics 58 (2) 025112. (10.1088/1361-6463/ad8662)
• Dyer, D. et al., 2024. Efficiency droop in zincblende InGaN/GaN quantum wells. Nanoscale 16 (29), pp.13953-13961. (10.1039/D4NR00812J)
• Gundimeda, A. et al., 2024. Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well. Nanotechnology 35 (39) 395705. (10.1088/1361-6528/ad5db4)
• Chen, C. et al., 2024. Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy. Applied Physics Letters 124 (23) 232107. (10.1063/5.0203646)

2023

• Chen, C. et al., 2023. Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. Ultramicroscopy 254 113833. (10.1016/j.ultramic.2023.113833)
• Hinz, A. M. et al., 2023. Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures. Journal of Crystal Growth 624 127420. (10.1016/j.jcrysgro.2023.127420)
• Leigh, W. et al. 2023. Monitoring of the initial stages of diamond growth on aluminum nitride using in situ spectroscopic ellipsometry. ACS Omega 8 (33), pp.30442-30449. (10.1021/acsomega.3c03609)
• Yang, H. et al., 2023. A cross-linkable, organic down-converting material for white light emission from hybrid LEDs. Journal of Materials Chemistry C Materials for optical and electronic devices 11 (29), pp.9984-9995. (10.1039/D2TC05139G)
• Wadsworth, A. et al., 2023. GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft. Superconductor Science and Technology 36 (9) 094002. (10.1088/1361-6668/ace5e7)
• Wade, T. et al., 2023. MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1). Journal of Crystal Growth 611 127182. (10.1016/j.jcrysgro.2023.127182)
• Ghosh, S. et al., 2023. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD. Semiconductor Science and Technology 38 (4) 044001. (10.1088/1361-6641/acb9b6)
• Xiu, H. et al., 2023. Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy. Journal of Applied Physics 133 105302. (10.1063/5.0138478)

2022

• Binks, D. J. et al., 2022. Cubic GaN and InGaN/GaN quantum wells. Applied Physics Reviews 9 041309. (10.1063/5.0097558)
• Yin, Y. et al., 2022. Fabrication of semi-polar (11-22) GaN V-groove MOSFET using wet etching trench opening technique. IEEE Electron Device Letters 43 (10), pp.1641-1644. (10.1109/LED.2022.3203633)
• Gundimeda, A. et al., 2022. Influence of AlxGa1-xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001). Journal of Physics D: Applied Physics 55 (7) 175110. (10.1088/1361-6463/ac4c58)
• Gundimeda, A. et al., 2022. Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers. Journal of Applied Physics 131 (11) 115703. (10.1063/5.0077186)

2021

• Dyer, D. et al., 2021. The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers. Journal of Applied Physics 130 (8) 085705. (10.1063/5.0057824)
• Church, S. A. et al., 2021. Photoluminescence efficiency of zincblende InGaN/GaN quantum wells. Journal of Applied Physics 129 175702. (10.1063/5.0046649)
• Spiridon, B. F. et al., 2021. Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis. Optical Materials Express 11 (6), pp.1643-1655. (10.1364/OME.418728)
• Vacek, P. et al., 2021. Defect structures in (001) zincblende GaN/3C-SiC nucleation layers. Journal of Applied Physics 129 (15) 155306. (10.1063/5.0036366)
• Cuenca, J. A. et al. 2021. Thermal stress modelling of diamond on GaN/III-Nitride membranes. Carbon 174 , pp.647-661. (10.1016/j.carbon.2020.11.067)

2020

• Sun, C. et al., 2020. Thin film gallium nitride (GaN) based acoustofluidic tweezer: modelling and microparticle manipulation. Ultrasonics 108 106202. (10.1016/j.ultras.2020.106202)
• Ding, B. et al., 2020. Alloy segregation at stacking faults in zincblende GaN heterostructures. Journal of Applied Physics 128 (14) 145703. (10.1063/5.0015157)
• Sun, C. et al., 2020. Gallium nitride: a versatile compound semiconductor as novel piezoelectric film for acoustic tweezer in manipulation of cancer cells. IEEE Transactions on Electron Devices 67 (8), pp.3355-3361. (10.1109/TED.2020.3002498)
• Church, S. A. et al., 2020. Stacking fault-associated polarised surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells. Applied Physics Letters 117 (3) 032103. (10.1063/5.0012131)
• Wiles, A. A. et al., 2020. A poly(urethane)-encapsulated benzo[2,3-d:6,7-d’]diimidazole organic down-converter for green hybrid LEDs. Materials Chemistry Frontiers 4 (3), pp.1006-1012. (10.1039/C9QM00771G)

2019

• Mandal, S. et al. 2019. Thick, adherent diamond films on AlN with low thermal barrier resistance. ACS Applied Materials and Interfaces 11 (43), pp.40826-40834. (10.1021/acsami.9b13869)
• Lee, L. Y. et al., 2019. Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates. Journal of Crystal Growth 524 125167. (10.1016/j.jcrysgro.2019.125167)
• Lee, L. Y. et al., 2019. Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM. Journal of Applied Physics 125 105303. (10.1063/1.5082846)
• Angioni, E. et al., 2019. Implementing fluorescent MOFs as down-converting layers in hybrid light-emitting diodes. Journal of Materials Chemistry. C 7 (8), pp.2394-2400. (10.1039/C9TC00067D)

2018

• Yi, L. et al., 2018. Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. Journal of Applied Physics 124 105302.
• Choi, F. S. et al., 2018. Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics 124 (5) 055702. (10.1063/1.5027680)
• Roff, C. et al., 2018. Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs. Presented at: ARFTG 70th Microwave Measurement Symposium Tempe, AZ, USA 27-30 November 2007. 2007 70th ARFTG Microwave Measurement Conference (ARFTG). IEEE. (10.1109/ARFTG.2007.8376173)
• Church, S. A. et al., 2018. Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. Journal of Applied Physics 123 (18) 185705. (10.1063/1.5026267)
• Zaidi, Z. H. et al., 2018. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics 123 (18) 184503. (10.1063/1.5027822)
• Tang, F. et al., 2018. Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics 123 (2) 024902. (10.1063/1.5006255)

2017

• Jiang, S. et al., 2017. All-GaN-integrated cascode heterojunction field effect transistors. IEEE Transactions on Power Electronics 32 (11), pp.8743-8750. (10.1109/TPEL.2016.2643499)
• Mandal, S. et al. 2017. Surface zeta potential and diamond seeding on gallium nitride films. ACS Omega 2 (10), pp.7275-7280. (10.1021/acsomega.7b01069)
• Eblabla, A. et al. 2017. Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017 Prague, Czech Republic 28-30 June 2017. Radar Symposium Conference Proceedings. , pp.1-7. (10.23919/IRS.2017.8008166)
• Rae, K. et al., 2017. InGaN µLEDs integrated onto colloidal quantum dot functionalized ultra-thin glass. Optics Express 25 (16), pp.19179-19184. (10.1364/OE.25.019179)
• Benakaprasad, B. et al. 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific New Delhi, India 5-9 Dec 2016. Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE(10.1109/APMC.2016.7931368)
• Eblabla, A. M. et al. 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7 (1), pp.93-97. (10.1109/TTHZ.2016.2618751)

2016

• Benakaprasad, B. et al. 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Copenhagen, Denmark 25-30 Sep 2016. 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE(10.1109/IRMMW-THz.2016.7758488)
• Jamil, S. et al., 2016. Standby person for electrical tasks and rescue guidelines for electrical incident victims. Presented at: Petroleum and Chemical Industry Technical Conference (PCIC) Philadelphia, PA, USA 19-22 Sep 2016. IEEE(10.1109/PCICON.2016.7589220)
• Chatterjee, I. et al., 2016. Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. Presented at: 2016 IEEE International Reliability Physics Symposium (IRPS) Pasadena, CA, USA 17-21 April 2016. 2016 IEEE International Reliability Physics Symposium (IRPS). IEEE. , pp.4A41-4A45. (10.1109/IRPS.2016.7574529)
• Wallis, D. 2016. The hazards of risk assessment. Presented at: Electrical Safety Workshop (ESW) Jacksonville, FL, USA 6-11 March 2016. (10.1109/ESW.2016.7499706)
• Waller, W. M. et al., 2016. Subthreshold Mobility in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices 63 (5), pp.1861-1865. (10.1109/TED.2016.2542588)
• Miaja, P. F. et al., 2016. Modelling the closely-coupled cascode switching process. Presented at: 2016 IEEE Energy Conversion Congress and Exposition (ECCE) Milwaukee, WI 18-22 September 2016. 2016 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE(10.1109/ECCE.2016.7855268)
• Benakaprasad, B. et al. 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics Glasgow, UK 26 May 2016.
• Eblabla, A. et al. 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference Milton Common Nr Thame, UK 18-19 Apr 2016.
• Elgaid, K. et al. 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016) Orlando, FL, USA 2-7 Oct 2016.

2015

• Eblabla, A. et al. 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36 (9), pp.899-901. (10.1109/LED.2015.2460120)
• Eblabla, A. et al. 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25 (7), pp.427-429. (10.1109/LMWC.2015.2429120)
• Waller, W. M. et al., 2015. Interface state artefact in long gate-length AlGaN/GaN HEMTs. IEEE Transactions of Electron Devices 62 (8), pp.2464-2469. (10.1109/TED.2015.2444911)

2010

• Ashley, T. et al., 2010. High-performance InSb based quantum well field effect transistors for low-power dissipation applications. Presented at: 2009 IEEE International Electron Devices Meeting (IEDM) Baltimore, MD, USA 7-9 December 2009. 2009 IEEE International Electron Devices Meeting (IEDM). IEEE. , pp.1. (10.1109/IEDM.2009.5424207)

2009

• Janssen, J. et al., 2009. X-Band GaN SPDT MMIC with over 25 watt linear power handling. Presented at: European Microwave Integrated Circuit Conference, 2008 Amsterdam, The Netherlands 27-28 October 2009. 2008 European Microwave Integrated Circuit Conference. IEEE(10.1109/EMICC.2008.4772261)
• Riedel, G. J. et al., 2009. Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers. IEEE Electron Device Letters 30 (2), pp.103-106. (10.1109/LED.2008.2010340)

2008

• Riedel, G. et al., 2008. Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices. IEEE Electron Device Letters 29 (5), pp.416-418. (10.1109/LED.2008.919779)
• Radosavljevic, M. et al., 2008. High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications. Presented at: IEEE International Electron Devices Meeting San Francisco, CA 15-17 Dec 2008. (10.1109/IEDM.2008.4796798)

2007

• Sarua, A. et al., 2007. Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices. IEEE Transactions of Electron Devices 54 (12), pp.3152-3158. (10.1109/TED.2007.908874)
• Ashley, T. et al., 2007. Indium antimonide based quantum well FETs for ultra-high speed electronics. Presented at: 64th Device Research Conference State College, PA 26-28 June 2006. , pp.201. (10.1109/DRC.2006.305056)
• Kuball, M. et al., 2007. Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-raman spectroscopy. IEEE Electron Device Letters 28 (2), pp.86-89. (10.1109/LED.2006.889215)
• Ashley, T. et al., 2007. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications. Electronics letters 43 (14) 777. (10.1049/el:20071335)

2006

• Ashley, T. et al., 2006. Indium antimonide based technology for RF applications. Presented at: Compound Semiconductor Integrated Circuit Symposium San Antonio, TX 12-15 Nov 2006. (10.1109/CSICS.2006.319918)
• Uren, M. et al., 2006. Control of Short-Channel Effects in GaN/AlGaN HFETs. Presented at: 1st European Microwave Integrated Circuits Conference Manchester, UK 10-13 Sept 2006. 2006 European Microwave Integrated Circuits Conference. IEEE. , pp.65-65. (10.1109/EMICC.2006.282751)
• Wallis, D. 2006. Class F at class B temperatures is it time for a change?. Presented at: Conference Record of the 2006 IEEE International Symposium on Electrical Insulation, 2006 Toronto, Ont., Canada 11-14 June 2006. (10.1109/ELINSL.2006.1665243)

2005

• Datta, S. et al., 2005. 85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications. Presented at: IEEE International Electron Devices Meeting Washington DC 5 Dec 2005. Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. IEEE. (10.1109/IEDM.2005.1609466)

2001

• Wallis, D. et al. 2001. Measurement of III-V quaternary composition using X-ray diffraction. IEE Proceedings Optoelectronics 148 (2), pp.97-100. (10.1049/ip-opt:20010442)

1996

• Wallis, D. , Watson, A. and Mo, N. 1996. Cardiac neurones of automatic ganglia. Microscopy Research and Technique 35 (1), pp.69-79. (10.1002/(SICI)1097-0029(19960901)35:1<69::AID-JEMT6>3.0.CO;2-N)