Dr Zhao Yan

Yi, X. et al. 2025. Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature. Presented at: OPTO 2025, San Francisco, California, USA, 25-31 January 2025Proceedings Optical Components and Materials XXII, Vol. 13362. SPIE, (10.1117/12.3042894)

Yan, Z., Zhang, W., Ebert, M., Ratiu, B., Reed, G. T., Thomson, D. J. and Li, Q. 2024. Large-area uniform III-V membranes grown on silicon-on-insulator by lateral tunnel epitaxy. Presented at: 2024 IEEE Photonics Conference (IPC), Rome, Italy, 1-14 November 20242024 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC60965.2024.10799698)
Temu, B., Yan, Z., Ratiu, B., Oh, S. S. and Li, Q. 2024. Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates. Applied Physics Letters 125(22), article number: 223501. (10.1063/5.0237589)
Yan, Z. and Li, Q. 2024. Recent progress in epitaxial growth of dislocation tolerant and dislocation free III-V lasers on silicon. Journal of Physics D: Applied Physics 57(21), article number: 213001. (10.1088/1361-6463/ad26cd)

Yi, X. et al. 2025. Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature. Presented at: OPTO 2025, San Francisco, California, USA, 25-31 January 2025Proceedings Optical Components and Materials XXII, Vol. 13362. SPIE, (10.1117/12.3042894)
Yan, Z., Zhang, W., Ebert, M., Ratiu, B., Reed, G. T., Thomson, D. J. and Li, Q. 2024. Large-area uniform III-V membranes grown on silicon-on-insulator by lateral tunnel epitaxy. Presented at: 2024 IEEE Photonics Conference (IPC), Rome, Italy, 1-14 November 20242024 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC60965.2024.10799698)

Temu, B., Yan, Z., Ratiu, B., Oh, S. S. and Li, Q. 2024. Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates. Applied Physics Letters 125(22), article number: 223501. (10.1063/5.0237589)
Yan, Z. and Li, Q. 2024. Recent progress in epitaxial growth of dislocation tolerant and dislocation free III-V lasers on silicon. Journal of Physics D: Applied Physics 57(21), article number: 213001. (10.1088/1361-6463/ad26cd)
Yan, Z. et al. 2023. Lateral tunnel epitaxy of GaAs in lithographically defined cavities on 220 nm silicon-on-insulator. Crystal Growth and Design 23(11), pp. 7821-7828. (10.1021/acs.cgd.3c00633)
Jia, H. et al. 2023. Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate. Applied Physics Letters 122(11), article number: 111108. (10.1063/5.0142391)
Messina, C. et al. 2023. Deformed honeycomb lattices of InGaAs nanowires grown on silicon-on-insulator for photonic crystal surface-emitting lasers. Advanced Optical Materials 11(5), article number: 2201809. (10.1002/adom.202201809)

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