Dr Wesley Sampson

Conferences

• Collier, A. et al. 2025. Large-signal performance comparison of ion implant and mesa etch isolated AlGaN/GaN HEMT switches on silicon. Presented at: European Microwave Integrated Circuits Conference Utrecht, The Netherlands 23 September 2025. Proceedings of the 20th European Microwave Integrated Circuits Conference. IEEE. , pp.230-233. (10.23919/EuMIC65284.2025.11234588)
• Collier, A. et al. 2025. Metal additive micro-manufacturing to achieve enhanced air-bridge geometry for coplanar waveguide mm-wave GaN-on-SiC integrated circuits. Presented at: CS MANTECH New Orleans, US 18-21st May 2025.
• Eblabla, A. et al. 2025. Dual-gate RF HEMT based on P-GaN/AlGaN on Si technology for future X-band on-chip RF and power electronics. Presented at: CS MANTECH New Orleans, US 18-21st May 2025.
• Eblabla, A. et al. 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC) Paris, France 23-24 September 2024. 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE. , pp.343-346. (10.23919/eumic61603.2024.10732350)

Thesis

• Sampson, W. 2025. Development and implementation of trap characterisation and analysis techniques for AlGaN/GaN HEMT technology. PhD Thesis , Cardiff University.