![Craig Allford](https://profiles-cardiff.imgix.net/attachments/4069?w=200&h=200&auto=format&crop=faces&fit=crop&q=90")
Dr Craig Allford
(he/him)
Teams and roles for Craig Allford
Research Fellow
Overview
I am a Research Fellow in Optoelectronics at the School of Physics & Astronomy, Cardiff University. I am currently employed by the EPSRC Future Compound Semicondcutor Hub whose vision is to establish the UK as the primary global research and manufacturing hub for Compound Semiconductor (CS) Technologies.
We aim to radically boost the uptake and application of CS technology by applying the manufacturing approaches of Silicon technologies to Compound Semiconductors. Enabling wide-spread exploitation of the highly advantageous electronic, magnetic, optical and power handling properties of CS materials, while utilising the cost and scaling of advantage of Silicon technology where best suited.
My focus is on the advanced characterisation of laser diodes, and long-term degradation studies of these devices. This work allows us to understand how to improve both the performance, and operating lifetimes of III-V compound semiconductor laser diodes. For this activity we have established an extensive suite of characterisation tools and equipment, which compliment the entensive range of fabrication equipment offered at Cardiff University by the Institute for Compound Semiconductors.
Publication
2025
- Baker, J. et al. 2025. Thermal performance of 940 nm AlGaAs-Based VCSELs grown on germanium. IEEE Photonics Journal 17 (2) 1501104. (10.1109/jphot.2025.3552951)
- Clowes, S. et al., 2025. Exchange interaction in an InSb quantum well measured with Landau-level tunneling spectroscopy. Physical Review Letters 135 146301. (10.1103/rr3f-3zhd)
- Gillgrass, S. J. et al. 2025. AlGaAs VSCELs grown on thin 150 mm germanium substrates. JPhys: Photonics 7 (3) 035033. (10.1088/2515-7647/adef1f)
- Jandu, G. M. et al. 2025. Optical gain in O-band active regions with multiple dot-in-well layers. APL Photonics 10 (10) 106112. (10.1063/5.0275039)
- Mishra, P. et al. 2025. High temperature operation of co-doped InAs quantum dot laser for O-band emission. IEEE Photonics Journal 17 (3) 0600606. (10.1109/jphot.2025.3560443)
2024
- Albeladi, F. T. et al. 2024. Multi-mode interference reflector InAs-QD mode-locked laser for integrated photonics. Presented at: 2024 IEEE Photonics Conference (IPC) Rome, Italy 10-14 November 2024. 2024 IEEE Photonics Conference (IPC). IEEE(10.1109/ipc60965.2024.10799723)
- Albeladi, F. T. et al., 2024. InAs quantum dot-based one- and two-port multimode interference reflectors for integrated photonic devices: design, fabrication, and evaluation. Presented at: SPIE OPTO 2024 San Francisco, CA, USA January 2024. Proceedings Novel In-Plane Semiconductor Lasers XXIII. Vol. 12905.SPIE. , pp.40. (10.1117/12.3003224)
- Baker, J. et al. 2024. Improved thermal performance of VCSELs on germanium substrates. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717337)
- Burman, T. T. et al. 2024. Assessing plasma-etched InP laser facet quality. IEEE Photonics Technology Letters (10.1109/LPT.2024.3397082)
- Gillgrass, S. et al. 2024. First demonstration of 940-nm VCSELs fabricated over 200-mm GaAs- and Ge-substrates. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE(10.1109/islc57752.2024.10717349)
- Jarvis, L. et al. 2024. Improving the performance of co-doped 1300nm QD lasers and modulators. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717406)
- Mishra, P. et al. 2024. Achieving O-band InAs quantum dot laser operation at 200 °C. Presented at: 2024 IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717409)
2023
- Albeladi, F. T. et al. 2023. Design and characterisation of multi-mode interference reflector lasers for integrated photonics. Journal of Physics D: Applied Physics 56 (38) 384001. (10.1088/1361-6463/acdb80)
- Albeladi, F. T. et al. 2023. Multi-mode interference reflector for integrated photonics. Presented at: 2023 IEEE Photonics Conference (IPC) 12-16 November 2023. Proceedings 2023 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC57732.2023.10360650)
- Albeladi, F. T. et al., 2023. Realisation of multi-mode reflector lasers for integrated photonics. Presented at: Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) 26-30 June 2023. 2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE. (10.1109/CLEO/Europe-EQEC57999.2023.10231858)
- Gillgrass, S. J. et al. 2023. Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs. Journal of Physics D: Applied Physics 56 (15) 154002. (10.1088/1361-6463/acc040)
- Hentschel, C. et al. 2023. Gain measurements on VCSEL material using segmented contact technique. Journal of Physics D: Applied Physics 56 (7), pp.074003. (10.1088/1361-6463/acaf0b)
2022
- Baker, J. et al. 2022. VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications. IET Optoelectronics (10.1049/ote2.12082)
- Baker, J. et al. 2022. VCSEL quick fabrication for assessment of large diameter epitaxial wafers. IEEE Photonics Journal 14 (3)(10.1109/JPHOT.2022.3169032)
2021
- Baker, J. et al. 2021. Quick fabrication VCSELs for characterisation of epitaxial material. Applied Sciences 11 (20) 9369. (10.3390/app11209369)
- Baker, J. et al. 2021. Sub-mA threshold current vertical cavity surface emitting lasers with a simple fabrication process. Presented at: 2021 IEEE Photonics Conference (IPC) 18-21 October 2021. Proceedings of the 2021 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC48725.2021.9592977)
- Hentschel, C. et al. 2021. Gain measurements on vertical cavity surface emitting laser material using segmented contact technique. Presented at: 2021 IEEE Photonics Conference (IPC) 18-21 October 2021. 2021 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC48725.2021.9592961)
- Maglio, B. et al. 2021. The limits to peak modal gain in p-modulation doped indium arsenide quantum dot laser diodes. Presented at: 2021 IEEE Photonics Conference (IPC) Vancouver, BC, Canada 18-21 October 2021. 2021 IEEE Photonics Conference (IPC). IEEE. , pp.1-2. (10.1109/IPC48725.2021.9592852)
- Mahoney, J. et al. 2021. QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots. Presented at: CLEO: Applications and Technology 2021 9-14 May 2021. OSA Technical Digest. (10.1364/CLEO_AT.2021.JTU3A.167)
2020
- Alharbi, R. et al. 2020. Design and realisation of InP mode-locked lasers emitting in the 730nm wavelength range. Presented at: Novel In-Plane Semiconductor Lasers XIX San Francisco, CA, USA 3-6 February 2020.
- Li, Z. et al. 2020. Monolithic InP quantum dot mode-locked lasers emitting at 730 nm. IEEE Photonics Technology Letters 32 (17), pp.1073-1076.
2019
- Allford, C. et al. 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019) Tyndall National Institute, University College Cork, Cork, Ireland 27-28 September 2019.
- Allford, C. P. et al. 2019. InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019) Tyndall National Institute, University College Cork, Cork, Ireland 27-28 September 2019.
- Jarvis, L. et al. 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX San Francisco, CA, USA 3-6 February 2020.
- Li, Z. et al. 2019. Monolithically mode-locked self-assembled InP quantum dot lasers. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
- Li, Z. et al. 2019. Monolithic growth InAs quantum dots lasers on (001) silicon emitting at 1.5 um. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
- Li, Z. et al. 2019. 12.5-GHz InP quantum dot monolithically mode-locked lasers emitting at 740 nm. Presented at: CLEO: Science and Innovations 2019 San Jose, CA, USA 5-10 May 2019. CLEO: Science and Innovations 2019. Optical Society of America. , pp.SM3N.6. (10.1364/CLEO_SI.2019.SM3N.6)
- Li, Z. et al. 2019. InP quantum dot mode-locked lasers and materials studies. Presented at: 2019 IEEE Photonics Conference (IPC) San Antonio, TX, USA 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE. , pp.1. (10.1109/IPCon.2019.8908334)
- Li, Z. et al. 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC) San Antonio, TX, USA 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE. , pp.1. (10.1109/IPCon.2019.8908479)
- Shutts, S. et al. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) 1900406. (10.1109/JSTQE.2019.2915994)
2018
- Allford, C. P. et al. 2018. Barrier width effects in InAsP/AlGaInP quantum dot lasers. Presented at: UK Semiconductor Conference 2018 (UKSC 2018) Sheffield, UK 4-5 July 2018.
- McIndo, C. et al. 2018. Optical microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells. Journal of Physics: Conference Series 964 012005. (10.1088/1742-6596/964/1/012005)
- McIndo, C. J. et al. 2018. Advances in electron transport in InSb/AlxIn1-xSb quantum wells. Presented at: International Symposium on Quantum Hall Effects and Related Topics (QHE2018) Max Planck Institute for Solid State Research, Stuttgart, Germany 27-29 June 2018.
- Shutts, S. et al. 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference Santa Fe, NM, USA 16-19 September 2018. 2018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE. , pp.85-86. (10.1109/ISLC.2018.8516178)
2017
- Allford, C. P. and Buckle, P. D. 2017. Strain compensated InGaAs/AlAs triple barrier resonant tunnelling structures for THz applications. IEEE Transactions on Terahertz Science & Technology 7 (6), pp.772-779. (10.1109/TTHZ.2017.2758266)
- Hayes, D. G. et al. 2017. Electron transport lifetimes in InSb/Al1-x In x Sb quantum well 2DEGs. Semiconductor Science and Technology 32 085002. (10.1088/1361-6641/aa75c8)
- McIndo, C. J. et al. 2017. Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy. Physica E: Low-dimensional Systems and Nanostructures 91 , pp.169-172. (10.1016/j.physe.2017.04.019)
- Smith, G. V. et al. 2017. Anomalous large apparent oscillation of effective g-factor in an InSb quantum well two-dimensional electron gas. Presented at: Electronic Properties of Two-Dimensional Systems 2017 (EP2DS 17) State College, PA, USA 31 July - 4 August 2017.
2016
- Allford, C. 2016. Resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures. PhD Thesis , Cardiff University.
2015
- Allford, C. P. et al. 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures. Semiconductor Science and Technology 30 (10) 105035. (10.1088/0268-1242/30/10/105035)
- Allford, C. P. , Buckle, P. D. and Missous, M. 2015. Critical state alignment and charge accumulation in triple barrier resonant tunnelling structures. Presented at: Workshop on Compound Semiconductor Devices and Integrated Circuits 2015 Smolenice, Slovakia 8-10 June 2015.
- Allford, C. P. et al. 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier tunnelling structures. Presented at: UK Semiconductor Conference 2014 (UKSC 2014) Sheffield, UK
Articles
- Albeladi, F. T. et al. 2023. Design and characterisation of multi-mode interference reflector lasers for integrated photonics. Journal of Physics D: Applied Physics 56 (38) 384001. (10.1088/1361-6463/acdb80)
- Allford, C. P. et al. 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures. Semiconductor Science and Technology 30 (10) 105035. (10.1088/0268-1242/30/10/105035)
- Allford, C. P. and Buckle, P. D. 2017. Strain compensated InGaAs/AlAs triple barrier resonant tunnelling structures for THz applications. IEEE Transactions on Terahertz Science & Technology 7 (6), pp.772-779. (10.1109/TTHZ.2017.2758266)
- Baker, J. et al. 2025. Thermal performance of 940 nm AlGaAs-Based VCSELs grown on germanium. IEEE Photonics Journal 17 (2) 1501104. (10.1109/jphot.2025.3552951)
- Baker, J. et al. 2022. VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications. IET Optoelectronics (10.1049/ote2.12082)
- Baker, J. et al. 2021. Quick fabrication VCSELs for characterisation of epitaxial material. Applied Sciences 11 (20) 9369. (10.3390/app11209369)
- Baker, J. et al. 2022. VCSEL quick fabrication for assessment of large diameter epitaxial wafers. IEEE Photonics Journal 14 (3)(10.1109/JPHOT.2022.3169032)
- Burman, T. T. et al. 2024. Assessing plasma-etched InP laser facet quality. IEEE Photonics Technology Letters (10.1109/LPT.2024.3397082)
- Clowes, S. et al., 2025. Exchange interaction in an InSb quantum well measured with Landau-level tunneling spectroscopy. Physical Review Letters 135 146301. (10.1103/rr3f-3zhd)
- Gillgrass, S. J. et al. 2023. Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs. Journal of Physics D: Applied Physics 56 (15) 154002. (10.1088/1361-6463/acc040)
- Gillgrass, S. J. et al. 2025. AlGaAs VSCELs grown on thin 150 mm germanium substrates. JPhys: Photonics 7 (3) 035033. (10.1088/2515-7647/adef1f)
- Hayes, D. G. et al. 2017. Electron transport lifetimes in InSb/Al1-x In x Sb quantum well 2DEGs. Semiconductor Science and Technology 32 085002. (10.1088/1361-6641/aa75c8)
- Hentschel, C. et al. 2023. Gain measurements on VCSEL material using segmented contact technique. Journal of Physics D: Applied Physics 56 (7), pp.074003. (10.1088/1361-6463/acaf0b)
- Jandu, G. M. et al. 2025. Optical gain in O-band active regions with multiple dot-in-well layers. APL Photonics 10 (10) 106112. (10.1063/5.0275039)
- Li, Z. et al. 2020. Monolithic InP quantum dot mode-locked lasers emitting at 730 nm. IEEE Photonics Technology Letters 32 (17), pp.1073-1076.
- McIndo, C. et al. 2018. Optical microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells. Journal of Physics: Conference Series 964 012005. (10.1088/1742-6596/964/1/012005)
- McIndo, C. J. et al. 2017. Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy. Physica E: Low-dimensional Systems and Nanostructures 91 , pp.169-172. (10.1016/j.physe.2017.04.019)
- Mishra, P. et al. 2025. High temperature operation of co-doped InAs quantum dot laser for O-band emission. IEEE Photonics Journal 17 (3) 0600606. (10.1109/jphot.2025.3560443)
- Shutts, S. et al. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) 1900406. (10.1109/JSTQE.2019.2915994)
Conferences
- Albeladi, F. T. et al. 2023. Multi-mode interference reflector for integrated photonics. Presented at: 2023 IEEE Photonics Conference (IPC) 12-16 November 2023. Proceedings 2023 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC57732.2023.10360650)
- Albeladi, F. T. et al. 2024. Multi-mode interference reflector InAs-QD mode-locked laser for integrated photonics. Presented at: 2024 IEEE Photonics Conference (IPC) Rome, Italy 10-14 November 2024. 2024 IEEE Photonics Conference (IPC). IEEE(10.1109/ipc60965.2024.10799723)
- Albeladi, F. T. et al., 2023. Realisation of multi-mode reflector lasers for integrated photonics. Presented at: Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) 26-30 June 2023. 2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE. (10.1109/CLEO/Europe-EQEC57999.2023.10231858)
- Albeladi, F. T. et al., 2024. InAs quantum dot-based one- and two-port multimode interference reflectors for integrated photonic devices: design, fabrication, and evaluation. Presented at: SPIE OPTO 2024 San Francisco, CA, USA January 2024. Proceedings Novel In-Plane Semiconductor Lasers XXIII. Vol. 12905.SPIE. , pp.40. (10.1117/12.3003224)
- Alharbi, R. et al. 2020. Design and realisation of InP mode-locked lasers emitting in the 730nm wavelength range. Presented at: Novel In-Plane Semiconductor Lasers XIX San Francisco, CA, USA 3-6 February 2020.
- Allford, C. et al. 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019) Tyndall National Institute, University College Cork, Cork, Ireland 27-28 September 2019.
- Allford, C. P. , Buckle, P. D. and Missous, M. 2015. Critical state alignment and charge accumulation in triple barrier resonant tunnelling structures. Presented at: Workshop on Compound Semiconductor Devices and Integrated Circuits 2015 Smolenice, Slovakia 8-10 June 2015.
- Allford, C. P. et al. 2018. Barrier width effects in InAsP/AlGaInP quantum dot lasers. Presented at: UK Semiconductor Conference 2018 (UKSC 2018) Sheffield, UK 4-5 July 2018.
- Allford, C. P. et al. 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier tunnelling structures. Presented at: UK Semiconductor Conference 2014 (UKSC 2014) Sheffield, UK
- Allford, C. P. et al. 2019. InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019) Tyndall National Institute, University College Cork, Cork, Ireland 27-28 September 2019.
- Baker, J. et al. 2024. Improved thermal performance of VCSELs on germanium substrates. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717337)
- Baker, J. et al. 2021. Sub-mA threshold current vertical cavity surface emitting lasers with a simple fabrication process. Presented at: 2021 IEEE Photonics Conference (IPC) 18-21 October 2021. Proceedings of the 2021 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC48725.2021.9592977)
- Gillgrass, S. et al. 2024. First demonstration of 940-nm VCSELs fabricated over 200-mm GaAs- and Ge-substrates. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE(10.1109/islc57752.2024.10717349)
- Hentschel, C. et al. 2021. Gain measurements on vertical cavity surface emitting laser material using segmented contact technique. Presented at: 2021 IEEE Photonics Conference (IPC) 18-21 October 2021. 2021 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC48725.2021.9592961)
- Jarvis, L. et al. 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX San Francisco, CA, USA 3-6 February 2020.
- Jarvis, L. et al. 2024. Improving the performance of co-doped 1300nm QD lasers and modulators. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717406)
- Li, Z. et al. 2019. Monolithically mode-locked self-assembled InP quantum dot lasers. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
- Li, Z. et al. 2019. Monolithic growth InAs quantum dots lasers on (001) silicon emitting at 1.5 um. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
- Li, Z. et al. 2019. 12.5-GHz InP quantum dot monolithically mode-locked lasers emitting at 740 nm. Presented at: CLEO: Science and Innovations 2019 San Jose, CA, USA 5-10 May 2019. CLEO: Science and Innovations 2019. Optical Society of America. , pp.SM3N.6. (10.1364/CLEO_SI.2019.SM3N.6)
- Li, Z. et al. 2019. InP quantum dot mode-locked lasers and materials studies. Presented at: 2019 IEEE Photonics Conference (IPC) San Antonio, TX, USA 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE. , pp.1. (10.1109/IPCon.2019.8908334)
- Li, Z. et al. 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC) San Antonio, TX, USA 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE. , pp.1. (10.1109/IPCon.2019.8908479)
- Maglio, B. et al. 2021. The limits to peak modal gain in p-modulation doped indium arsenide quantum dot laser diodes. Presented at: 2021 IEEE Photonics Conference (IPC) Vancouver, BC, Canada 18-21 October 2021. 2021 IEEE Photonics Conference (IPC). IEEE. , pp.1-2. (10.1109/IPC48725.2021.9592852)
- Mahoney, J. et al. 2021. QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots. Presented at: CLEO: Applications and Technology 2021 9-14 May 2021. OSA Technical Digest. (10.1364/CLEO_AT.2021.JTU3A.167)
- McIndo, C. J. et al. 2018. Advances in electron transport in InSb/AlxIn1-xSb quantum wells. Presented at: International Symposium on Quantum Hall Effects and Related Topics (QHE2018) Max Planck Institute for Solid State Research, Stuttgart, Germany 27-29 June 2018.
- Mishra, P. et al. 2024. Achieving O-band InAs quantum dot laser operation at 200 °C. Presented at: 2024 IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717409)
- Shutts, S. et al. 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference Santa Fe, NM, USA 16-19 September 2018. 2018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE. , pp.85-86. (10.1109/ISLC.2018.8516178)
- Smith, G. V. et al. 2017. Anomalous large apparent oscillation of effective g-factor in an InSb quantum well two-dimensional electron gas. Presented at: Electronic Properties of Two-Dimensional Systems 2017 (EP2DS 17) State College, PA, USA 31 July - 4 August 2017.
Thesis
- Allford, C. 2016. Resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures. PhD Thesis , Cardiff University.
Biography
Education and qualifications:
2016: PhD (Physics), Thesis: "Resonant Tunnelling in GaAs/AlGaAs Triple Barrier Heterostructure", Cardiff University, Cardiff, UK
2009: BSc Theoretical and Computational Physics, Cardiff University, Cardiff, UK.
Career Overview:
July 2022 - Present: Research Fellow, School of Physics and Astronomy, Cardiff University, Cardiff, UK
January 2018 - June 2022: Research Associate, School of Physics and Astronomy, Cardiff University, Cardiff, UK
January 2017 - December 2017: Research Fellow, School of Engineering, University of Warwick, Coventry, UK.
January 2017 - December 2017: Honorary Research Associate, School of Physics and Astronomy, Cardiff University, Cardiff, UK.
May 2016 - December 2016: Research Associate, School of Physics and Astronomy, Cardiff University, Cardiff, UK.
Professional memberships
Member of the Institute of Physics (IoP).
Supervisions
I am interested in supervising PhD students in the areas of:
- Narrow bandgap semiconductor devices (e.g. InSb Quantum Devices).
- Semicondcutor devices for the exploitation of Majorana Fermions.
- Integrated Photonic Devices.
- Advanced Laser Diode Characterisation.
Current supervision
Contact Details
Research themes
Specialisms
- Compound semiconductors
- Lasers and quantum electronics
- Light Emitting Diodes (LED)
- Quantum technologies