Professor Khaled Elgaid

2025

• Collier, A. , Eblabla, A. and Elgaid, K. 2025. Sculpting at the micro-scale. [Online].Vol. 9Compound Semiconductor Magazine: Angel Business Communications. Available at: https://compoundsemiconductor.net/article/123096/Sculpting_at_the_micro-scale.
• Collier, A. et al. 2025. Large-signal performance comparison of ion implant and mesa etch isolated AlGaN/GaN HEMT switches on silicon. Presented at: European Microwave Integrated Circuits Conference Utrecht, The Netherlands 23 September 2025. Proceedings of the 20th European Microwave Integrated Circuits Conference. IEEE. , pp.230-233. (10.23919/EuMIC65284.2025.11234588)
• Collier, A. et al. 2025. Metal additive micro-manufacturing to achieve enhanced air-bridge geometry for coplanar waveguide mm-wave GaN-on-SiC integrated circuits. Presented at: CS MANTECH New Orleans, US 18-21st May 2025.
• Eblabla, A. et al. 2025. Dual-gate RF HEMT based on P-GaN/AlGaN on Si technology for future X-band on-chip RF and power electronics. Presented at: CS MANTECH New Orleans, US 18-21st May 2025.

2024

• Eblabla, A. et al. 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC) Paris, France 23-24 September 2024. 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE. , pp.343-346. (10.23919/eumic61603.2024.10732350)
• Varghese, A. , Eblabla, A. and Elgaid, K. 2024. Open-gated GaN HEMT-based pH detectors using patterned sensing area. IEEE Sensors Journal 24 (23), pp.38620-38626. (10.1109/jsen.2024.3477744)

2023

• Eblabla, A. et al. 2023. Low-loss MIM capacitor on thick SiO2 dielectric for GaN-on-Si substrates with Standard and elevated top electrode configurations. Presented at: 53rd European Microwave Conference (EuMC) Berlin, Germany 19-21 September 2023. Proceedings of 53rd European Microwave Conference. IEEE. , pp.38-41. (10.23919/EuMC58039.2023.10290587)
• Kumar, A. et al., 2023. Optimization and fabrication of MEMS based piezoelectric acoustic sensor for wide frequency range and high SPL acoustic application. Micro and Nanostructures 179 207592. (10.1016/j.micrna.2023.207592)

2022

• Alathbah, M. and Elgaid, K. 2022. Miniature mesa extension for a planar submicron AlGaN/GaN HEMT gate formation. Micromachines 13 (11) 2007. (10.3390/mi13112007)
• Kumar, A. et al., 2022. Recent development and futuristic applications of MEMS based piezoelectric microphones. Sensors and Actuators A: Physical 347 113887. (10.1016/j.sna.2022.113887)
• Varghese, A. et al. 2022. GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity. IEEE Sensors Journal 22 (12), pp.12307-12313. (10.1109/JSEN.2022.3170653)

2021

• Alathbah, M. , Eblabla, A. and Elgaid, K. 2021. Frequency doubler based on a lateral multi-channel GaN Schottky barrier diode for 5G technology. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020) Smolenice, Slovakia 11-14 October 2020. 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE. , pp.14-18. (10.1109/ASDAM50306.2020.9393861)
• Alathbah, M. , Eblabla, A. and Elgaid, K. 2021. Novel slotted mmWave CPW branch line coupler for MMIC and sub-THz applications. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020) Smolenice, Slovakia 11-14 October 2020. 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE. , pp.111-114. (10.1109/ASDAM50306.2020.9393863)
• Ghosh, S. et al., 2021. Origin(s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon. ACS Applied Electronic Materials 3 (2), pp.813-824. (10.1021/acsaelm.0c00966)
• Varghese, A. , Eblabla, A. and Elgaid, K. 2021. Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit. IEEE Sensors Journal 21 (13), pp.15361-15368. (10.1109/JSEN.2021.3072476)

2020

• Benakaprasad, B. et al. 2020. Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon. IEEE Transactions on Electron Devices 63 (3), pp.863-868. (10.1109/TED.2020.2968186)
• Eblabla, A. et al. 2020. Membrane supported GaN CPW structures for high-frequency and high-power applications. Presented at: 2019 IEEE Asia-Pacific Microwave Conference (APMC) Marina Bay Sands, Singapore 10-13 December 2019. 2019 IEEE Asia-Pacific Microwave Conference (APMC). IEEE. , pp.1179-1181. (10.1109/APMC46564.2019.9038731)
• Smith, M. D. et al., 2020. GaN-on-diamond technology platform: bonding-free membrane manufacturing process. AIP Advances 10 (3) 035306. (10.1063/1.5129229)

2019

• Benakaprasad, B. et al. 2019. 90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology. Presented at: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Paris, France 1-6 Sept 2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE. , pp.-. (10.1109/IRMMW-THz.2019.8873748)
• Chandrasekar, H. et al., 2019. Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology. IEEE Transactions on Electron Devices 66 (4), pp.1681-1687. (10.1109/TED.2019.2896156)
• Eblabla, A. et al. 2019. Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters 40 (6), pp.878-880. (10.1109/LED.2019.2912910)

2018

• Chandrasekar, H. et al., 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39 (10), pp.1556-1559. (10.1109/LED.2018.2864562)
• Eblabla, A. et al. 2018. High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters 28 (2), pp.99-101. (10.1109/LMWC.2018.2790705)

2017

• Benakaprasad, B. et al., 2017. Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (EuMC), 2016 46th European London, UK 4-6 Oct 2016. Microwave Conference (APMC) 2016 Asia-Pacific. IEEE. , pp.413. (10.1109/EuMC.2016.7824367)
• Benakaprasad, B. et al. 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific New Delhi, India 5-9 Dec 2016. Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE(10.1109/APMC.2016.7931368)
• Eblabla, A. et al. 2017. Low-loss MMICs viable transmission media for GaN-on-Low resistivity silicon technology. IEEE Microwave and Wireless Components Letters 27 (1), pp.10-12. (10.1109/LMWC.2016.2629964)
• Eblabla, A. et al. 2017. Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017 Prague, Czech Republic 28-30 June 2017. Radar Symposium Conference Proceedings. , pp.1-7. (10.23919/IRS.2017.8008166)
• Eblabla, A. M. et al. 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7 (1), pp.93-97. (10.1109/TTHZ.2016.2618751)

2016

• Benakaprasad, B. et al. 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics Glasgow, UK 26 May 2016.
• Benakaprasad, B. et al. 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Copenhagen, Denmark 25-30 Sep 2016. 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE(10.1109/IRMMW-THz.2016.7758488)
• Eblabla, A. et al. 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference Milton Common Nr Thame, UK 18-19 Apr 2016.
• Eblabla, A. et al. 2016. GaN-based HEMTs on low resistivity silicon technology for microwave applications. Presented at: 8th Wide Bandgap Semiconductor and Components Workshop Harwell, UK 12-13 Sept 2016.
• Elgaid, K. et al. 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016) Orlando, FL, USA 2-7 Oct 2016.
• Elgaid, K. , Houston, P. and Tasker, P. 2016. EPSRC projects in microwave, millimetre-wave and THz research, integration of RF circuits with high speed GaN switching on silicon substrates. Presented at: European Microwave Conference London 3-7 Oct 2016.

2015

• Eblabla, A. et al., 2015. Effect of AlN spacer in the layer structure on high Rf performance GaN-Based HEMTs on low resistivity silicon at K-Band application. Presented at: 11th International Conference on Nitride Semiconductors (ICNS-11) Beijing, China 30 Aug - 4 Sept 2015.
• Eblabla, A. et al. 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36 (9), pp.899-901. (10.1109/LED.2015.2460120)
• Eblabla, A. et al. 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25 (7), pp.427-429. (10.1109/LMWC.2015.2429120)

2013

• Ahmed, N. A. S. , Emhemmed, A. and Elgaid, K. 2013. Dual-radios hypermesh network based on CSMA protocol. Presented at: 2013 International Conference on Information Networking (ICOIN) Bangkok, Thailand 28-30 January 2013. (10.1109/ICOIN.2013.6496376)
• Aref, I. and Elgaid, K. 2013. System level modeling of a digital communication channel based on SystemC. International Journal of Future Computer and Communication 2 (3), pp.210-214. (10.7763/IJFCC.2013.V2.154)

2012

• Ahmed, N. A. S. and Elgaid, K. 2012. Single and multi-channel networks: Performance comparison at system level. Presented at: 2012 8th International Symposium on Communication Systems, Networks & Digital Signal Processing (CSNDSP) Poznan 18-20 July 2012. , pp.1. (10.1109/CSNDSP.2012.6292766)
• Emhemmed, A. S. , Ahmed, N. A. and Elgaid, K. 2012. EC-CPW fed elevated patch antenna. Presented at: 24th International Conference on Microelectronics (ICM) Algiers, Algeria 16-20 Dec 2012. (10.1109/ICM.2012.6471374)
• Hettak, K. et al., 2012. High-performance 3D on-chip air-gap spiral inductor and its application to filter design. Presented at: Asia-Pacific Microwave Conference 2011 5-8 December 2011. Asia-Pacific Microwave Conference 2011. IEEE. , pp.-.

2011

• Aghamoradi, F. , McGregor, I. and Elgaid, K. 2011. High performance resonators for mm-wave ICs. Presented at: 2010 Asia-Pacific Microwave Conference 7-10 December 2010. 2010 Asia-Pacific Microwave Conference. IEEE
• Aghamoradi, F. et al., 2011. Low-loss grounded elevated coplanar waveguide for sub-millimeter wave MMIC applications. Progress In Electromagnetics Research B 34 , pp.103-123. (10.2528/PIERB11072111)
• Donadio, O. , Elgaid, K. and Appleby, R. 2011. Waveguide-to-microstrip transition at G-band using elevated E-plane probe. Electronics letters 47 (2), pp.115-116. (10.1049/el.2010.2926)
• Hettak, K. and Elgaid, K. 2011. 3D Ultra miniature MMIC TFMS 90° coupler fabricated with a standard air bridge process. Presented at: 41st European Microwave Conference 10-13 October 2011. 2011 41st European Microwave Conference. IEEE. , pp.-. (10.23919/EuMC.2011.6101979)

2010

• Aghamoradi, F. , McGregor, I. and Elgaid, K. 2010. H-Band elevated CPW band-pass filters on GaAs substrate. Presented at: 40th European Microwave Conference 2010 Paris, France 28-30 September 2010. Proceedings 40th European Microwave Conference 2010. IEEE. , pp.-. (10.23919/EUMC.2010.5616390)
• Ahmed, N. et al., 2010. Network performance evaluation based on SoC design methodology. Presented at: 7th International Symposium on Communication Systems, Networks & Digital Signal Processing (CSNDSP 2010) 21-23 July 2010. Communication Systems, Networks and Digital Signal Processing, CNSDSP, International Symposium on. IEEE. , pp.-.
• Aref, I. et al., 2010. Measuring and optimising convergence and stability in terms of system construction in systemC. Presented at: 2010 17th IEEE International Conference and Workshops on Engineering of Computer Based Systems (ECBS) Oxford 22-26 March 2010. , pp.263. (10.1109/ECBS.2010.36)
• Aref, I. et al., 2010. Modeling of flocking behaviour system in SystemC. Presented at: Sixth Advanced International Conference on Telecommunications Barcelona, Spain 9-15 May 2010. 2010 Sixth Advanced International Conference on Telecommunications. IEEE. , pp.358. (10.1109/AICT.2010.29)
• Aref, I. et al., 2010. Wireless extension into existing SystemC design methodology. Presented at: 2010 2nd International Conference on Computer Engineering and Technology (ICCET) Chengdu, China 16-18 April 2010. Computer Engineering and Technology (ICCET). , pp.V3-374. (10.1109/ICCET.2010.5485893)
• Emhemmed, A. S. , McGregor, I. and Elgaid, K. 2010. Elevated conductor coplanar waveguide-fed three-level proximity-coupled antenna for G-band applications. IET Microwaves, Antennas & Propagation 4 (11), pp.1910-1915. (10.1049/iet-map.2009.0616)
• Hwang, C. et al., 2010. W-band microstrip band-pass filter using branch-line coupler with open stubs. Microwave and Optical Technology Letters 52 (6), pp.1436-1439. (10.1002/mop.25185)
• Hwang, C. et al., 2010. An ultra-low-power MMIC amplifier using 50-nm $\delta$ -doped $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ metamorphic HEMT. IEEE Electron Device Letters 31 (11), pp.1230-1232. (10.1109/LED.2010.2070484)
• Lok, L. et al., 2010. Demonstration of a W-band microstrip parallel coupled-line bandpass filter in GaAs technology. Presented at: IET Seminar on Passive RF and Microwave Components Birmingham, UK 21-21 Feb 2012. Passive RF and Microwave Components. IEEE. , pp.37. (10.1049/ic.2010.0174)
• McGregor, I. and Elgaid, K. 2010. Low-power GaAs comparator and monostable. Electronics Letters 46 (17), pp.1214-1215. (10.1049/el.2010.1357)
• McGregor, I. , Aghamoradi, F. and Elgaid, K. 2010. An approximate analytical model for the quasi-static parameters of elevated CPW lines. IEEE Transactions on Microwave Theory and Techniques 58 (12), pp.3809-3814. (10.1109/TMTT.2010.2086552)
• McGregor, I. et al., 2010. Low complexity, low power, 10 GHz super-regenerative transceiver. Presented at: APMC 2009: Asia Pacific Microwave Conference Singapore, Singapore 7-10 December 2009. 2009 Asia Pacific Microwave Conference. IEEE. , pp.587-590. (10.1109/APMC.2009.5384157)

2009

• Aghamoradi, F. , McGregor, I. and Elgaid, K. 2009. Performance enhancement of millimetre-wave resonators using elevated CPW. Electronics letters 45 (25), pp.1326-1328. (10.1049/el.2009.2348)
• Ahmed, N. et al., 2009. Wireless channel model based on SoC design methodology. Presented at: 2009 Fourth International Conference on Systems and Networks Communications Porto, Portugal 20-25 September 2009. Systems and Networks Communications, 2009. ICSNC '09. Fourth International Conference on. IEEE. , pp.72. (10.1109/ICSNC.2009.81)
• Emhemmed, A. S. , Elgaid, K. and Lok, L. B. 2009. Integrated micromachined millimeter wave patch antenna. Presented at: IEEE International Workshop on Antenna Technology, 2009 Santa Monica, CA, USA 2-4 March 2009. , pp.1. (10.1109/IWAT.2009.4906903)
• Emhemmed, A. S. and Elgaid, K. 2009. Broadband micromachined microstrip patch antenna for G-band applications. Presented at: European Microwave Conference (EuMC) 2009 29 September - 1 October 2009. 2009 European Microwave Conference (EuMC). IEEE(10.23919/EUMC.2009.5296036)
• Emhemmed, A. S. and Elgaid, K. 2009. G-band bowtie dipole antenna. Presented at: 3rd European Conference on Antennas and Propagation 2009 Berlin, Germany 23-27 March 2009. Proceedings of the 2009 3rd European Conference on Antennas and Propagation. IEEE. , pp.-.
• Emhemmed, A. S. , McGregor, I. and Elgaid, K. 2009. 200GHz broadband proximity coupled patch antenna. Presented at: IEEE International Conference on Ultra-Wideband, 2009 Vancouver, BC, Canada 9-11 September 2009. (10.1109/ICUWB.2009.5288756)
• Hettak, K. et al., 2009. 3D MMIC compact semi-lumped loaded CPW stubs for spurious suppression fabricated with a standard air bridge process. Presented at: IEEE MTT-S International Microwave Symposium Digest Boston, USA 7-12 Jun 2009. MTT-S International Microwave Symposium Digest. IEEE. , pp.1033. (10.1109/MWSYM.2009.5165876)
• Hwang, C. et al., 2009. DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications. Electronics letters 45 (12), pp.632-634. (10.1049/el.2009.0684)
• Hwang, C. et al., 2009. Erratum for DC 35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications. Electronics letters 45 (14), pp.764-764. (10.1049/el.2009.1741)
• Hwang, C. et al., 2009. Parallel coupled-line bandpass filter with branch-line shape for G-band frequency. Electronics Letters 45 (16), pp.838-840. (10.1049/el.2009.0716)
• Hwang, C. et al., 2009. A wide bandpass filter with defected ground structure for wide out-of-band suppression. Presented at: Asia Pacific Microwave Conference, 2009 Singapore 7-10 December 2009. (10.1109/APMC.2009.5385299)
• Hwang, C. et al., 2009. An ultra-low power OOK RF transceiver for wireless sensor networks. Presented at: European Microwave Conference, 2009 (EuMC 2009) Rome, Italy 29 September - 1 October 2009. proceedings of the 2009 European Microwave Conference (EuMC). IEEE. , pp.-.
• Lok, L. B. et al., 2009. A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs. Presented at: European Microwave Conference (EuMC) 2009 29 September -1 October 2009. 2009 European Microwave Conference (EuMC). IEEE. , pp.-. (10.23919/EUMC.2009.5296151)
• Lok, L. B. et al., 2009. Impact of waveguide aperture dimensions and misalignment on the calibrated performance of a network analyzer from 140 to 325GHz. Presented at: 2009 73rd ARFTG Microwave Measurement Conference Boston, MA, USA 12 June 2009. (10.1109/ARFTG.2009.5278062)
• McGregor, I. , Whyte, G. and Elgaid, K. 2009. Low complexity, 165 µW, 5 Mbit/s wideband radio front-end with range of several meters. Presented at: 2009 IEEE MTT-S International Microwave Symposium Boston, MA 7-12 June 2009. 2009 IEEE MTT-S International Microwave Symposium Digest. IEEE. , pp.397. (10.1109/MWSYM.2009.5165717)

2008

• Aref, I. A. et al., 2008. RTL-level modeling of an 8B/10B encoder-decoder using SystemC. Presented at: 5th IFIP International Conference on Wireless and Optical Communications Networks (WOCN '08) Surabaya, Indonesia 13 Jun 2008. 5th IFIP International Conference on Wireless and Optical Communications Networks (WOCN '08). IEEE Xplore. , pp.1. (10.1109/WOCN.2008.4542493)
• Hwang, C. et al., 2008. μ-watt MMIC TX/RX for wireless sensor applications. Presented at: IET Seminar on RF and Microwave IC Design London, UK 28-28 Feb 2008. 2008 IET Seminar on RF and Microwave IC Design. IEEE. (10.1049/ic:20080113)
• Lok, L. B. et al., 2008. Study of the deleterious effect of common-mode behavior on CPS branch-line couplers and Wilkinson dividers. Presented at: Asia-Pacific Microwave Conference (APMC 2007) Bangkok, Thailand 11-14 December 2007. 2007 Asia-Pacific Microwave Conference. IEEE. , pp.1-4. (10.1109/APMC.2007.4554823)
• Lok, L. B. et al., 2008. Measurement and modeling of CPW transmission lines and power dividers on electrically thick GaAs substrate to 220GHz. Presented at: 33rd International Conference on Infrared, Millimeter and Terahertz Waves, 2008 Pasadena, CA, USA 15-19 September 2008. (10.1109/ICIMW.2008.4665794)

2007

• Arvind, D. K. et al., 2007. Towards an integrated design approach to specknets. Presented at: IEEE International Conference on Communications Glasgow, UK 24–28 June 2007. 2007 IEEE International Conference on Communications. IEEE. , pp.3319. (10.1109/ICC.2007.550)
• Collier, R. et al., 2007. A study of high frequency performance of coplanar waveguide as a function of substrate thickness. Presented at: 30th European Microwave Conference 2000 Paris, France 2-5 October 2000. 2000 30th European Microwave Conference. IEEE. , pp.1-3. (10.1109/EUMA.2000.338733)
• Edgar, D. et al., 2007. W-band performance of coplanar waveguide on thinned substrates. Presented at: 29th European Microwave Conference 1999 Munich, Germany 5-7 October 1999. Proceedings of 29th European Microwave Conference 1999. IEEE. , pp.363-366. (10.1109/EUMA.1999.338569)
• Elgaid, K. et al. 2007. Parasitic moding influences on coplanar waveguide passive components at G-band frequency. Presented at: 36th European Microwave Conference 2006 Manchester, England 10-15 September 2006. 2006 European Microwave Conference. IEEE. , pp.486-488. (10.1109/EUMC.2006.281398)
• Elgaid, K. et al. 2007. CPW interconnects for MMIC applications on low resistivity CMOS grade silicon using micromachined SU8 negative resist. Presented at: 32nd European Microwave Conference 2002 Milan, Italy 23-26 September 2002. , pp.1. (10.1109/EUMA.2002.339431)
• Lodhi, T. et al., 2007. InP-based W-band coplanar waveguide couplers. Presented at: 29th European Microwave Conference 1999 Munich, Germany 5-7 October 1999. 1999 29th European Microwave Conference. IEEE. , pp.250-253. (10.1109/EUMA.1999.338320)
• Thayne, I. et al., 2007. 50 nm metamorphic GaAs and InP HEMTs. Thin Solid Films 515 (10), pp.4373-4377. (10.1016/j.tsf.2006.07.104)

2006

• Elgaid, K. and Thayne, I. 2006. Monolithic millimetrewave integrated circuits (MMICs) issues beyond 100 GHz for high resolution imaging and radar applications. Presented at: 2006 IET Seminar on MM-Wave Products and Technologies London, England 16 November 2006. IET Seminar on MM-Wave Products and Technologies, 2006. Vol. 2006., pp.78-80. (10.1049/ic:20060114)
• Hettak, K. et al., 2006. Design and characterization of elevated CPW and thin film microstrip structures for millimeter-wave applications. Presented at: European Microwave Conference Paris, France 4-6 Oct 2005. 2005 European Microwave Conference. IEEE. (10.1109/EUMC.2005.1610067)
• Moran, D. A. J. et al., 2006. 50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node. IEEE Transactions of Electron Devices 53 (12), pp.2920-2925. (10.1109/TED.2006.885674)
• Thayne, I. et al., 2006. 50nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. Presented at: 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings Princeton, NJ, USA 8-11 May 2006. (10.1109/ICIPRM.2006.1634143)
• Zhou, H. et al., 2006. Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition. Japanese Journal of Applied Physics 45 (10B) 8388. (10.1143/JJAP.45.8388)

2005

• Elgaid, K. et al. 2005. 50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters 26 (11), pp.784-786. (10.1109/LED.2005.857716)
• Elgaid, K. et al. 2005. Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications. Presented at: nternational Conference on Indium Phosphide and Related Materials, 2005 Glasgow 8-12 May 2005. (10.1109/ICIPRM.2005.1517548)
• Elgaid, K. et al. 2005. Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f/sub T/ of 440GHz for millimeterwave imaging receivers applications. Presented at: International Conference on Indium Phosphide and Related Materials, 2005 Glasgow 8-12 May 2005. , pp.141. (10.1109/ICIPRM.2005.1517439)
• KaIna, K. et al., 2005. Modelling of InP HEMTs with high indium content channels. Presented at: International Conference on Indium Phosphide and Related Materials, 2005 Glasgow 8-12 May 2005. International Conference on Indium Phosphide and Related Materials, 2005. IEEE. , pp.192-195. (10.1109/ICIPRM.2005.1517454)
• Kalna, K. et al., 2005. RF analysis of aggressively scaled pHEMTs. Presented at: 30th European Solid-State Device Research Conference 2000 Cork, Ireland 11-13 September 2000. 30th European Solid-State Device Research Conference. IEEE. , pp.156-159. (10.1109/ESSDERC.2000.194738)
• Li, X. et al., 2005. Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry etch gate recessed 120nm T-gate GaAs pHEMTs. Microelectronic Engineering 78-79 , pp.233-238. (10.1016/j.mee.2004.12.032)

2004

• Elgaid, K. et al. 2004. Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications. Microelectronic Engineering 73-74 , pp.452-455. (10.1016/S0167-9317(04)00191-1)
• Moran, D. et al., 2004. Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering 73-74 , pp.814-817. (10.1016/S0167-9317(04)00226-6)
• Thayne, I. et al., 2004. Very high perfonnance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. Presented at: 4th IEEE Conference on Nanotechnology, 2004 Munich 16-19 August 2004. , pp.95. (10.1109/NANO.2004.1392261)
• Xin, C. et al., 2004. Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors. Microelectronic Engineering 73-74 , pp.818-821. (10.1016/S0167-9317(04)00227-8)
• Yang, L. et al., 2004. Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability 44 (7), pp.1101-1107. (10.1016/j.microrel.2004.04.003)

2003

• Boyd, E. et al., 2003. 120nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilizing non-annealed ohmic contacts. Presented at: Compound Semiconductors 2002 Lausanne, Switzerland 7-10 October 2002. Proceedings of the Compound Semiconductors Conference 2002. Institute of Physics Conference Series Boca Raton: CRC Press. , pp.-.
• Elgaid, K. , McCloy, D. A. and Thayne, I. G. 2003. Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrates. Microelectronic Engineering 67-68 , pp.417-421. (10.1016/S0167-9317(03)00188-6)
• Macintyre, D. S. et al., 2003. Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21 (6), pp.2783. (10.1116/1.1629719)
• Moran, D. et al., 2003. Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering 67-68 , pp.769-774. (10.1016/S0167-9317(03)00137-0)
• Yang, L. et al., 2003. Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications. Presented at: 2003 IEEE Conference on Electron Devices and Solid-State Circuits Hong Kong, China 16-18 December 2003. , pp.331. (10.1109/EDSSC.2003.1283543)

2002

• Ang, K. et al., 2002. 40 to 90 GHz impedance-transforming CPW Marchand balun. Presented at: 2000 IEEE MTT-S International Microwave Symposium Boston, MA, USA 11-16 June 2000. 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017). Vol. 2.IEEE. , pp.1141-1144. (10.1109/MWSYM.2000.863559)
• Burns, G. et al., 2002. Millimetre wave high efficiency photonic crystal antennas. Presented at: 7th IEEE High Frequency Postgraduate Student Colloquium London, UK 8-9 September 2002. 7th IEEE High Frequency Postgraduate Student Colloquium. IEEE. (10.1109/HFPSC.2002.1088425)
• Cameron, N. et al., 2002. A high performance, high yield, dry-etched, pseudomorphic HEMT for W-band use. Presented at: 1995 IEEE MTT-S International Microwave Symposium Orlando, Florida, USA 16-20 May 1995. Proceedings of 1995 IEEE MTT-S International Microwave Symposium. IEEE. , pp.438. (10.1109/MWSYM.1995.405952)
• Chongcheawchamnan, M. et al., 2002. Ultrawideband characterisation of CPW GaAs monolithic 60 GHz couplers using overlaid structures. Presented at: Asia-Pacific Microwave Conference 2001 Taipei, Taiwan 3-6 December 2001. APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577). IEEE. , pp.-. (10.1109/APMC.2001.985585)
• Edgar, D. et al., 2002. W-band on wafer measurement of active and passive devices. Presented at: IEE Colloquium on Microwave Measurements: Current Techniques and Trends London, U.K. 23 February 1999. Proceedings of IEE Colloquium on Microwave Measurements: Current Techniques and Trends (Ref. No. 1999/008). Vol. 1999.IEEE. (10.1049/ic:19990025)
• Hutabarat, M. T. et al., 2002. On wafer intermodulation distortion measurements on resistive FET mixers for device comparison and model validation. Presented at: 1999 7th Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO London, England, United Kingdom 22-23 November 1999. 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401). IEEE. , pp.170-175. (10.1109/EDMO.1999.821480)
• Kalna, K. et al., 2002. Effect of impact ionization in scaled pHEMTs. Presented at: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 Glasgow, Scotland, UK 14 November 2000. 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534). IEEE. , pp.236-241. (10.1109/EDMO.2000.919065)
• Kalna, K. et al., 2002. Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study. Presented at: International EuroConference on Advanced Semiconductor Devices (ASDAM 2000) Smolenice, Slovakia 16-18 October, 2000. ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386). IEEE. , pp.55-58. (10.1109/ASDAM.2000.889451)
• Kalna, K. et al., 2002. Scaling of pseudomorphic high electron mobility transistors to decanano dimensions. Solid-State Electronics 46 (5), pp.631-638. (10.1016/S0038-1101(01)00331-8)
• Lodhi, T. et al., 2002. A 77 GHz coplanar waveguide MMIC BPSK vector modulator realised using InP technology. Presented at: Gallium Arsenide Integrated Circuit (GaAs IC), Annual IEEE Symposium Seattle, WA, US 5-8 November 2000. GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084). IEEE. , pp.183-186. (10.1109/GAAS.2000.906319)
• McPherson, D. et al., 2002. Ultra-broadband nonlinear PHEMT modelling using TOPAS/sup TM/. Presented at: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000 Glasgow, Scotland, UK 14 November 2000. 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534). IEEE. , pp.85-88. (10.1109/EDMO.2000.919035)
• Thayne, I. G. et al., 2002. On-wafer W-band determination of the driving point impedance of a double slot antenna. Presented at: Colloquium on Microwave Measurements: Current Techniques and Trends London, England, UK 23 February 1999. IEE Colloquium on Microwave Measurements: Current Techniques and Trends (Ref. No. 1999/008). Vol. 1999.IET. , pp.3-4. (10.1049/ic:19990026)

2001

• Elgaid, K. et al. 2001. Fabrication of on-wafer MMIC compatible integrated NiCr loads. Microelectronic Engineering 57-58 , pp.801-806. (10.1016/S0167-9317(01)00504-4)
• Kalna, K. et al., 2001. Scaling of pHEMTs to Decanano Dimensions. VLSI Design 13 (1-4), pp.435-439. (10.1155/2001/19759)
• Li, X. et al., 2001. Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch. Microelectronic Engineering 57-58 , pp.633-640. (10.1016/S0167-9317(01)00495-6)
• Yip, J. G. M. et al., 2001. Substrate modes in double-layered coplanar waveguides. Presented at: 2001 31st European Microwave Conference London, UK 24-26 September 2001. 2001 31st European Microwave Conference. IEEE. (10.1109/EUMA.2001.338997)
• Young, P. et al., 2001. Accurate non-uniform transmission line model and its application to the de-embedding of on-wafer measurements. IEE Proceedings - Microwaves, Antennas and Propagation 148 (3), pp.153-156. (10.1049/ip-map:20010402)

1999

• Elgaid, K. et al. 1999. Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes. Electronics letters 35 (19), pp.1678-1679. (10.1049/el:19991104)
• Ternent, G. et al., 1999. Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide. Electronics letters 35 (22), pp.1957-1958. (10.1049/el:19991298)

1997

• Thayne, I. et al., 1997. Front-end building blocks using the Glasgow 0.2 /spl mu/m GaAs MESFET process. Presented at: IEE Colloquium on RF and Microwave Circuits for Commercial Wireless Applications London, United Kingdom 13-13 February 1997. IEE Colloquium on RF& Microwave Circuits for Commercial Wireless Applications (Digest No. 1997/026). IEE. , pp.03-06. (10.1049/ic:19970168)

1996

• Elgaid, K. et al. 1996. Compact low loss coplanar waveguide to slotline transition for MMMIC applications. Electronics Letters 32 (18), pp.1677. (10.1049/el:19961142)

1995

• Thayne, I. et al., 1995. Low-frequency noise of selectively dry-etch gate-recessed GaAs MESFETs. Electronics Letters 31 (4), pp.324-326. (10.1049/el:19950206)

1992

• Boolchand, P. et al., 1992. Fe-site assignments in Y1Ba2Cu3O7 revisited. Hyperfine Interactions 68 (1-4), pp.15-25. (10.1007/BF02396448)

1990

• Boolchand, P. et al., 1990. Signature of twin planes in Mössbauer spectroscopy of cuprate superconductors. Hyperfine Interactions 62 (1-2), pp.73-88. (10.1007/BF02407664)

1988

• Blue, C. et al., 1988. Oxygen-vacancy-formation enthalpy in YBa2(Cu0.985Fe0.015)3O7−δ oxide superconductor. Physical Review B (Condensed Matter) 37 5905R. (10.1103/PhysRevB.37.5905)
• Boolchand, P. et al., 1988. Metallic doping sites in Y1Ba2Cu3O7−δ. Physical Review B (Condensed Matter) 38 (16), pp.11313-11316. (10.1103/PhysRevB.38.11313)