Dr Chris Hodges

(he/him)

2025

• Mishra, P. et al. 2025. High temperature operation of co-doped InAs quantum dot laser for O-band emission. IEEE Photonics Journal (10.1109/jphot.2025.3560443)

2024

• Mishra, P. et al. 2024. Achieving O-band InAs quantum dot laser operation at 200 °C. Presented at: 2024 IEEE 29th International Semiconductor Laser Conference (ISLC), Orlando, FL, USA, 29 September - 02 October 20242024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE pp. 1-2., (10.1109/islc57752.2024.10717409)
• James, F. L. L. et al. 2024. Blue delayed luminescence emission in neutral nitrogen vacancy containing chemical vapor deposition synthetic diamond. physica status solidi (a) – applications and materials science 221(8), article number: 2300651. (10.1002/pssa.202300651)
• Komies, S., Sun, J., Hodges, C., Lynch, S. A., Watson, J. S. and Lucyszyn, S. 2024. Low-cost thermal-infrared 'THz-Torch' spectroscopy. IEEE Access 12, pp. 21868-21885. (10.1109/ACCESS.2024.3359054)

2023

• Albeladi, F. T. et al. 2023. Low-loss III-V photonics and high efficiency grating couplers incorporating low-index AlOx layers. Presented at: 2023 IEEE Photonics Conference (IPC), 12-16 November 2023Proceedings 2023 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC57732.2023.10360787)

2022

• Rogers, J. P. et al. 2022. High-resolution nanosecond spectroscopy of even-parity Rydberg excitons in Cu2O. Physical Review B 105(11), article number: 115206. (10.1103/PhysRevB.105.115206)
• Gallagher, L. A. P. et al. 2022. Microwave-optical coupling via Rydberg excitons in cuprous oxide. Physical Review Research 4(1), article number: 13031. (10.1103/PhysRevResearch.4.013031)

2021

• Lynch, S. A. et al. 2021. Rydberg excitons in synthetic cuprous oxide (Cu2O). Physical Review Materials 5(8), article number: 86402. (10.1103/PhysRevMaterials.5.084602)

2018

• Wassell, A. M. et al. 2018. Anomalous green luminescent properties in CVD synthetic diamonds. physica status solidi (a) 215(22), article number: 1800292. (10.1002/pssa.201800292)

2016

• Brazzini, T. et al. 2016. Mechanism of hot electron electroluminescence in GaN-based transistors. Journal of Physics D: Applied Physics 49(43), article number: 435101. (10.1088/0022-3727/49/43/435101)