Lydia Jarvis

2025

• Jandu, G. M. et al. 2025. Optical gain in O-band active regions with multiple dot-in-well layers. APL Photonics 10 (10) 106112. (10.1063/5.0275039)
• Mishra, P. et al. 2025. Achieving selectivity and reduced absorption for low loss monolithic InAs QD based III-V photonic integration. Journal of Physics D: Applied Physics 58 (26) 265104. (10.1088/1361-6463/ade450)
• Mishra, P. et al. 2025. High temperature operation of co-doped InAs quantum dot laser for O-band emission. IEEE Photonics Journal 17 (3) 0600606. (10.1109/jphot.2025.3560443)

2024

• Jarvis, L. et al. 2024. Improving the performance of co-doped 1300nm QD lasers and modulators. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717406)
• Maglio, B. et al. 2024. Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices. Optical and Quantum Electronics 56 (4) 687. (10.1007/s11082-024-06362-2)
• Mishra, P. et al. 2024. Achieving O-band InAs quantum dot laser operation at 200 °C. Presented at: 2024 IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717409)

2022

• Deng, H. et al., 2022. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. Journal of Physics D: Applied Physics 55 (21) 215105. (10.1088/1361-6463/ac55c4)
• Jarvis, L. 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. PhD Thesis , Cardiff University.
• Jarvis, L. K. et al. 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. Presented at: SPIE OPTO, 2022 22-27 January 2022. Society of Photo-optical Instrumentation Engineers(10.1117/12.2614632)

2021

• Maglio, B. et al. 2021. The limits to peak modal gain in p-modulation doped indium arsenide quantum dot laser diodes. Presented at: 2021 IEEE Photonics Conference (IPC) Vancouver, BC, Canada 18-21 October 2021. 2021 IEEE Photonics Conference (IPC). IEEE. , pp.1-2. (10.1109/IPC48725.2021.9592852)
• Mahoney, J. et al. 2021. QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots. Presented at: CLEO: Applications and Technology 2021 9-14 May 2021. OSA Technical Digest. (10.1364/CLEO_AT.2021.JTU3A.167)

2019

• Jarvis, L. et al. 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX San Francisco, CA, USA 3-6 February 2020.
• Le Boulbar, E. D. et al. 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
• Le Boulbar, E. D. et al. 2019. Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019 Angers, France 9-13 July 2019. 2019 21st International Conference on Transparent Optical Networks (ICTON). IEEE. , pp.1-4. (10.1109/ICTON.2019.8840542)