![Angela Sobiesierski](https://profiles-cardiff.imgix.net/attachments/3651?w=200&h=200&auto=format&crop=faces&fit=crop&q=90")
Publication
2023
- Androvitsaneas, P. et al. 2023. Direct-write projection lithography of quantum dot micropillar single photon sources. [Online]. arXiv. Available at: https://doi.org/10.48550/arXiv.2304.00141
2020
- Gough, G. P., Sobiesierski, A. D., Shabbir, S., Thomas, S., Beggs, D. M., Taylor, R. A. and Bennett, A. J. 2020. Faraday-cage-assisted etching of suspended gallium nitride nanostructures. AIP Advances 10(5), article number: 55319. (10.1063/5.0007947)
2019
- Shutts, S. et al. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25(6), article number: 1900406. (10.1109/JSTQE.2019.2915994)
2016
- Chen, S. et al. 2016. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10, pp. 307-311. (10.1038/nphoton.2016.21)
- Orchard, J. R. et al. 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express 24(6), pp. 6196-6202. (10.1364/OE.24.006196)
2015
- Sobiesierski, A., Thomas, R., Buckle, P. D., Barrow, D. and Smowton, P. M. 2015. A two-stage surface treatment for the long-term stability of hydrophilic SU-8. Surface and Interface Analysis 47(13), pp. 1174-1179. (10.1002/sia.5870)
- Thomas, R., Holton, M., Sobiesierski, A., Gillgrass, S., Summers, H. D., Barrow, D. and Smowton, P. M. 2015. Integrated III-V semiconductor flow cytometer with capillary fill micro-fluidics. Presented at: 2015 IEEE Photonics Conference (IPC), Reston, VA, USA, 4 - 8 October 2015IEEE Xplore. IEEE pp. 7-8., (10.1109/IPCon.2015.7323580)
- Finch, P., Hutchings, M. D., Blood, P., Sobiesierski, A., Smowton, P. M. and O'Driscoll, I. D. 2015. Improving the optical bandwidth of passively mode-locked InAs quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 21(6), article number: 1900507. (10.1109/JSTQE.2015.2416675)
2014
- Belyanin, A. A., Blood, P., Finch, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M. and O'Driscoll, I. 2014. Femtosecond pulse generation from a two-section mode-locked quantum-dot laser using random population. Presented at: Novel In-Plane Semiconductor Lasers XIII, San Francisco, 3 February 2014 through 6 February 2014Proceedings of SPIE - The International Society for Optical Engineering, Vol. 9002. SPIE pp. 90020E., (10.1117/12.2039130)
2013
- Finch, P., Blood, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M. and O'Driscoll, I. 2013. Femtosecond pulse generation in passively mode locked InAs quantum dot lasers. Applied Physics Letters 103(13), article number: 131109. (10.1063/1.4822433)
2012
- O'Driscoll, I., Blood, P., Smowton, P. M., Sobiesierski, A. and Gwilliam, R. 2012. Effect of proton bombardment on InAs dots and wetting layer in laser structures. Applied Physics Letters 100(26), article number: 261105. (10.1063/1.4730964)
2011
- Sobiesierski, A. and Smowton, P. M. 2011. Quantum-dot lasers: physics and applications. In: Bhattacharya, P., Fornari, R. and Kamimura, H. eds. Comprehensive Semiconductor Science and Technology: Volume 6: Devices and Applications. Burlington, VT: Elsevier, pp. 353-384., (10.1016/B978-0-44-453153-7.00034-1)
- Sobiesierski, A., Naidu, D. and Smowton, P. M. 2011. The lateral ambipolar diffusion length in quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011 Presented at Belyanin, A. A. and Smowton, P. M. eds.Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011, Vol. 7953. Proceedings of SPIE Bellingham, WA: The International Society for Optical Engineering pp. 795306., (10.1117/12.874474)
2007
- Naidu, D. et al. 2007. Role of device structure on the performance of quantum dot lasers. Presented at: LEOS 2007: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007, 21-25 October 2007LEOS 2007. The 20th Annual Meeting of the IEEE. IEEE pp. 435-436., (10.1109/LEOS.2007.4382465)
- Edwards, G., Sobiesierski, A., Westwood, D. and Smowton, P. 2007. Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl-2/Ar inductively coupled plasma. Semiconductor Science and Technology 22(9), pp. 1010-1015. (10.1088/0268-1242/22/9/006)
2006
- Smowton, P. M. et al. 2006. Characterisation of modulation doped quantum dot lasers. Presented at: Novel In-plane Semiconductor Lasers V, San Jose, CA, USA, 21-26 January 2006 Presented at Mermelstein, C. and Bour, D. P. eds.Novel In-Plane Semiconductor Lasers V. Proceedings of SPIE Vol. 6133. Bellingham, WA: SPIE pp. 61330T., (10.1117/12.650682)
- Smowton, P. M. et al. 2006. Characterisation of modulation doped quantum dot lasers. Presented at: Novel In-plane Semiconductor Lasers V, San Jose, CA, USA, 23-26 January 2006 Presented at Mermelstein, C. and Bour, D. P. eds.Novel In-plane Semiconductor Lasers V. Proceedings of SPIE Vol. 6133. Bellingham, WA: SPIE Press pp. T1330-T1330.
- Brown, M. R. et al. 2006. Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes. Journal of Applied Physics 100(8) (10.1063/1.2362906)
2005
- Sobiesierski, A. et al. 2005. AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier. Applied Physics Letters 86(2) (10.1063/1.1849847)
2004
- Teng, K. S., Brown, M. R., Wilks, S., Sobiesierski, A., Smowton, P. and Blood, P. 2004. Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy. Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures 22(4), pp. 2014-2017. (10.1116/1.1768187)
2003
- Smowton, P., Lewis, G. M., Sobiesierski, A., Blood, P., Lutti, J. and Osborne, S. 2003. Non-uniform carrier distribution in multi-quantum-well lasers. Applied Physics Letters 83(3), pp. 419-421. (10.1063/1.1593818)
- Sobiesierski, A., Lewis, G. M., Smowton, P., Blood, P., Jones, G. and Bland, S. W. 2003. Coupled multi-quantum well 650-nm emitting GaInP laser diodes. Presented at: Novel In-Plane Semiconductor Lasers II, San Jose, CA, USA, 27-29 January, 2003Novel In-Plane Semiconductor Lasers II. SPIE Proceeedings Vol. 4995. SPIE pp. 152-159., (10.1117/12.475785)
Articles
- Gough, G. P., Sobiesierski, A. D., Shabbir, S., Thomas, S., Beggs, D. M., Taylor, R. A. and Bennett, A. J. 2020. Faraday-cage-assisted etching of suspended gallium nitride nanostructures. AIP Advances 10(5), article number: 55319. (10.1063/5.0007947)
- Shutts, S. et al. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25(6), article number: 1900406. (10.1109/JSTQE.2019.2915994)
- Chen, S. et al. 2016. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10, pp. 307-311. (10.1038/nphoton.2016.21)
- Orchard, J. R. et al. 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express 24(6), pp. 6196-6202. (10.1364/OE.24.006196)
- Sobiesierski, A., Thomas, R., Buckle, P. D., Barrow, D. and Smowton, P. M. 2015. A two-stage surface treatment for the long-term stability of hydrophilic SU-8. Surface and Interface Analysis 47(13), pp. 1174-1179. (10.1002/sia.5870)
- Finch, P., Hutchings, M. D., Blood, P., Sobiesierski, A., Smowton, P. M. and O'Driscoll, I. D. 2015. Improving the optical bandwidth of passively mode-locked InAs quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 21(6), article number: 1900507. (10.1109/JSTQE.2015.2416675)
- Finch, P., Blood, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M. and O'Driscoll, I. 2013. Femtosecond pulse generation in passively mode locked InAs quantum dot lasers. Applied Physics Letters 103(13), article number: 131109. (10.1063/1.4822433)
- O'Driscoll, I., Blood, P., Smowton, P. M., Sobiesierski, A. and Gwilliam, R. 2012. Effect of proton bombardment on InAs dots and wetting layer in laser structures. Applied Physics Letters 100(26), article number: 261105. (10.1063/1.4730964)
- Edwards, G., Sobiesierski, A., Westwood, D. and Smowton, P. 2007. Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl-2/Ar inductively coupled plasma. Semiconductor Science and Technology 22(9), pp. 1010-1015. (10.1088/0268-1242/22/9/006)
- Brown, M. R. et al. 2006. Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes. Journal of Applied Physics 100(8) (10.1063/1.2362906)
- Sobiesierski, A. et al. 2005. AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier. Applied Physics Letters 86(2) (10.1063/1.1849847)
- Teng, K. S., Brown, M. R., Wilks, S., Sobiesierski, A., Smowton, P. and Blood, P. 2004. Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy. Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures 22(4), pp. 2014-2017. (10.1116/1.1768187)
- Smowton, P., Lewis, G. M., Sobiesierski, A., Blood, P., Lutti, J. and Osborne, S. 2003. Non-uniform carrier distribution in multi-quantum-well lasers. Applied Physics Letters 83(3), pp. 419-421. (10.1063/1.1593818)
Book sections
- Sobiesierski, A. and Smowton, P. M. 2011. Quantum-dot lasers: physics and applications. In: Bhattacharya, P., Fornari, R. and Kamimura, H. eds. Comprehensive Semiconductor Science and Technology: Volume 6: Devices and Applications. Burlington, VT: Elsevier, pp. 353-384., (10.1016/B978-0-44-453153-7.00034-1)
Conferences
- Thomas, R., Holton, M., Sobiesierski, A., Gillgrass, S., Summers, H. D., Barrow, D. and Smowton, P. M. 2015. Integrated III-V semiconductor flow cytometer with capillary fill micro-fluidics. Presented at: 2015 IEEE Photonics Conference (IPC), Reston, VA, USA, 4 - 8 October 2015IEEE Xplore. IEEE pp. 7-8., (10.1109/IPCon.2015.7323580)
- Belyanin, A. A., Blood, P., Finch, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M. and O'Driscoll, I. 2014. Femtosecond pulse generation from a two-section mode-locked quantum-dot laser using random population. Presented at: Novel In-Plane Semiconductor Lasers XIII, San Francisco, 3 February 2014 through 6 February 2014Proceedings of SPIE - The International Society for Optical Engineering, Vol. 9002. SPIE pp. 90020E., (10.1117/12.2039130)
- Sobiesierski, A., Naidu, D. and Smowton, P. M. 2011. The lateral ambipolar diffusion length in quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011 Presented at Belyanin, A. A. and Smowton, P. M. eds.Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011, Vol. 7953. Proceedings of SPIE Bellingham, WA: The International Society for Optical Engineering pp. 795306., (10.1117/12.874474)
- Naidu, D. et al. 2007. Role of device structure on the performance of quantum dot lasers. Presented at: LEOS 2007: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007, 21-25 October 2007LEOS 2007. The 20th Annual Meeting of the IEEE. IEEE pp. 435-436., (10.1109/LEOS.2007.4382465)
- Smowton, P. M. et al. 2006. Characterisation of modulation doped quantum dot lasers. Presented at: Novel In-plane Semiconductor Lasers V, San Jose, CA, USA, 21-26 January 2006 Presented at Mermelstein, C. and Bour, D. P. eds.Novel In-Plane Semiconductor Lasers V. Proceedings of SPIE Vol. 6133. Bellingham, WA: SPIE pp. 61330T., (10.1117/12.650682)
- Smowton, P. M. et al. 2006. Characterisation of modulation doped quantum dot lasers. Presented at: Novel In-plane Semiconductor Lasers V, San Jose, CA, USA, 23-26 January 2006 Presented at Mermelstein, C. and Bour, D. P. eds.Novel In-plane Semiconductor Lasers V. Proceedings of SPIE Vol. 6133. Bellingham, WA: SPIE Press pp. T1330-T1330.
- Sobiesierski, A., Lewis, G. M., Smowton, P., Blood, P., Jones, G. and Bland, S. W. 2003. Coupled multi-quantum well 650-nm emitting GaInP laser diodes. Presented at: Novel In-Plane Semiconductor Lasers II, San Jose, CA, USA, 27-29 January, 2003Novel In-Plane Semiconductor Lasers II. SPIE Proceeedings Vol. 4995. SPIE pp. 152-159., (10.1117/12.475785)
Websites
- Androvitsaneas, P. et al. 2023. Direct-write projection lithography of quantum dot micropillar single photon sources. [Online]. arXiv. Available at: https://doi.org/10.48550/arXiv.2304.00141
Research
My research area of interest is Condensed Matter Physics. My Ph.D. work focused on electron transport across semiconductor hetero-junctions and metal-semiconductor Schottky barriers utilising novel semiconductor structures to modify and control the size of the electrical barriers at the semiconductor interfaces.
Since then I have worked as a post-doctoral research associate on several different research projects including SiC for high power devices and the application of multi-quantum-barriers to reduce electron leakage in red-emitting laser diodes.
More recently my research has focussed on the development of new or novel processing techniques for the fabrication of advanced optoelectronic devices, for example, segmented contact dry-etched ridge lasers, ridge lasers incorporating DBR gratings and the integration of optoelectronic devices and microstructures for capillary-driven micro-fluidic flow analysis.
Biography
I obtained my B.Sc. degree in Mathematics and Physics (joint honours) from Exeter University in 1991.
Following this I was employed by Rolls Royce (Bristol) as a Stress Engineer until 1993 when I commenced my Ph.D. in Condensed Matter Physics at Cardiff University under the supervision of Professor Robin Williams FRS.
I obtained my Ph.D. in 1997, worked briefly for DERA Farnborough before returning to university life as a post-doctoral research associate, initially at Swansea University (1997 – 2000) and most recently (2000 onwards) at Cardiff University.
In September 2012 I became Manager of the Cleanroom facility shared between Physics and Engineering.
