![Qiang Li](https://profiles-cardiff.imgix.net/attachments/3777?w=200&h=200&auto=format&crop=faces&fit=crop&q=90")
Dr Qiang Li
(he/him)
- Available for postgraduate supervision
Teams and roles for Qiang Li
Overview
The research of my group at Cardiff University can be broadly divided into four areas: Epitaxy of quantum dots for lasers; Nanowires and quantum materials; Tunnel epitaxy for Si photonics integration; Type-II superlattice infrared detectors.
We work closely with the Institute for Compound Semiconductors (ICS) and EPSRC Future Compound Semiconductor Manufacturing Hub.
I am a Topical Editor for Optics Letters.
MOCVD Research Group Website
Publication
2025
- Ratiu, B. et al. 2025. Vortex beam lasing from III-V nanowires epitaxially grown on silicon-on-insulator. Laser and Photonics Reviews, article number: e01297. (10.1002/lpor.202501297)
- Yan, Z. et al. 2025. MOCVD-grown InAs/InP quantum dot lasers with low threshold current. Optics Express 33(15), pp. 31195-31203. (10.1364/OE.568365)
- Jia, H. et al. 2025. Low threshold InAs/InP quantum dot lasers on Si. Presented at: IEEE Silicon Photonics Conference (SiPhotonics), London, UK, 14-17 April 20252025 IEEE Silicon Photonics Conference (SiPhotonics). IEEE, (10.1109/SiPhotonics64386.2025.10984482)
- Yan, Z., Zhang, W., Ebert, M., Ratiu, B., Reed, G. T., Thomson, D. J. and Li, Q. 2025. Optically pumped lasing from InP membranes grown on silicon-on-insulator by tunnel epitaxy. Presented at: IEEE Silicon Photonics Conference (SiPhotonics), London, UK, 14-17 April 20252025 IEEE Silicon Photonics Conference (SiPhotonics). IEEE, (10.1109/SiPhotonics64386.2025.10985302)
- Park, J. et al. 2025. Low threshold InAs/InP quantum dot lasers. Optics Express 33(9), pp. 19158-19165. (10.1364/OE.561471)
- Yi, X. et al. 2025. Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature. Presented at: OPTO 2025, San Francisco, California, USA, 25-31 January 2025Proceedings Optical Components and Materials XXII, Vol. 13362. SPIE, (10.1117/12.3042894)
- Brown, R. et al. 2025. 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD. APL Photonics 10(1), article number: 16102. (10.1063/5.0231448)
- Dear, C. et al. 2025. The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots. Journal of Physics D: Applied Physics 58, article number: 125104. (10.1088/1361-6463/adabf1)
2024
- Yan, Z., Zhang, W., Ebert, M., Ratiu, B., Reed, G. T., Thomson, D. J. and Li, Q. 2024. Large-area uniform III-V membranes grown on silicon-on-insulator by lateral tunnel epitaxy. Presented at: 2024 IEEE Photonics Conference (IPC), Rome, Italy, 1-14 November 20242024 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC60965.2024.10799698)
- Yuan, J. et al. 2024. Indium-flush technique for C-band InAs/InP quantum dots. APL Materials 12(12), article number: 121109. (10.1063/5.0239360)
- Temu, B., Yan, Z., Ratiu, B., Oh, S. S. and Li, Q. 2024. Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates. Applied Physics Letters 125(22), article number: 223501. (10.1063/5.0237589)
- Liu, S. et al. 2024. Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon. Applied Physics Letters 125(8), article number: 82102. (10.1063/5.0219507)
- Yan, Z. and Li, Q. 2024. Recent progress in epitaxial growth of dislocation tolerant and dislocation free III-V lasers on silicon. Journal of Physics D: Applied Physics 57(21), article number: 213001. (10.1088/1361-6463/ad26cd)
2023
- Yan, Z. et al. 2023. Lateral tunnel epitaxy of GaAs in lithographically defined cavities on 220 nm silicon-on-insulator. Crystal Growth and Design 23(11), pp. 7821-7828. (10.1021/acs.cgd.3c00633)
- Ratiu, B. et al. 2023. Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator. Optics Express 31(22), pp. 36668-36676. (10.1364/OE.499696)
- Jia, H. et al. 2023. Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate. Applied Physics Letters 122(11), article number: 111108. (10.1063/5.0142391)
- Messina, C. et al. 2023. Deformed honeycomb lattices of InGaAs nanowires grown on silicon-on-insulator for photonic crystal surface-emitting lasers. Advanced Optical Materials 11(5), article number: 2201809. (10.1002/adom.202201809)
2022
- Brown, R. et al. 2022. Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD. Journal of Crystal Growth 598, article number: 126860. (10.1016/j.jcrysgro.2022.126860)
- Gong, Y., Messina, C., Wong, S., Abouzaid, O., Ratiu, B., Li, Q. and Oh, S. S. 2022. Topological lasers with epitaxially grown InGaAs nanowires on a SOI substrate. Presented at: Conference on Lasers and Electro-Optics, QELS_Fundamental Science 2022, San Jose, US, 15–20 May 2022Conference on Lasers and Electro-Optics. Technical Digest Series San Jose, US: Optica Publishing Group, (10.1364/CLEO_QELS.2022.FF2C.1)
2020
- Chen, B. et al. 2020. Low dark current high gain InAs quantum dot avalanche photodiodes monolithically grown on Si. ACS Photonics 7(2), pp. 528–533. (10.1021/acsphotonics.9b01709)
- Wan, Y. et al. 2020. Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si. IEEE Journal of Selected Topics in Quantum Electronics 26, article number: 1900409. (10.1109/JSTQE.2020.2964381)
2019
- Kim, H. et al. 2019. Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE. Optics Express 27(23), pp. 33205-33216. (10.1364/OE.27.033205)
- Shang, C. et al. 2019. Low-threshold epitaxially grown 1.3 μm InAs quantum dot lasers on patterned (001) Si. IEEE Journal of Selected Topics in Quantum Electronics 25(6), article number: 1502207. (10.1109/JSTQE.2019.2927581)
- Shi, B., Han, Y., Li, Q. and Lau, K. M. 2019. 1.55 μm lasers epitaxially grown on silicon. IEEE Journal of Selected Topics in Quantum Electronics 25(6), article number: 1900711. (10.1109/JSTQE.2019.2927579)
- Huang, J. et al. 2019. Defect characterization of InAs/InGaAs quantum dot p-i-n photodetector grown on GaAs-on-V-grooved-Si substrate. ACS Photonics 6(5), pp. 1100-1105. (10.1021/acsphotonics.8b01707)
- Han, Y., Ng, W., Xue, Y., Li, Q., Wong, K. S. and Lau, K. M. 2019. Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator. Optics Letters 44(4), pp. 767-770. (10.1364/OL.44.000767)
- Rajeev, A. et al. 2019. III-V Superlattices on InP/Si metamorphic buffer Layers for λ≈4.8 μm quantum cascade lasers. physica status solidi (a) 216(1), article number: 1800493. (10.1002/pssa.201800493)
- Shang, C. et al. 2019. Triple reduction of threshold current for 1.3 ?m InAs quantum dot lasers on patterned, on-axis (001) Si. Presented at: CLEO: Science and Innovations 2019, San Jose, California, USA, 5–10 May 2019Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, 2019). OSA Publishing pp. -., (10.1364/CLEO_SI.2019.STu3N.1)
- Han, Y., Zhu, S., Shi, B., Li, Q. and Lau, K. M. 2019. III-V lasers emitting at 1.3 to 1.5 µm grown on (001) silicon by MOCVD (invited). Presented at: CLEO: Science and Innovations 2019, San Jose, California, USA, 5–10 May 2019Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, 2019). OSA Publishing, (10.1364/CLEO_SI.2019.STh3N.5)
- Huynh, S. H., Kim, H., Gong, Y., Azizur-Rahman, K., Li, Q. and Huffaker, D. 2019. Catalyst-free selective-area metalorganic chemical vapour deposition of InGaAs/InGaP core-shell nanowire arrays. Presented at: UK Semiconductors 2019 Conference, Sheffield, United Kingdom, 10-11 July 2019.
2018
- Zhu, S., Shi, B., Li, Q. and Lau, K. M. 2018. 1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon. Applied Physics Letters 113(22), article number: 221103. (10.1063/1.5055803)
- Vaisman, M. et al. 2018. GaAs solar Ccells on nanopatterned Si substrates. IEEE Journal of Photovoltaics 8(6), pp. 1635-1640. (10.1109/JPHOTOV.2018.2871423)
- Han, Y. et al. 2018. Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands. Optica 5(8), pp. 918-923. (10.1364/OPTICA.5.000918)
- Han, Y., Li, Q., Ng, K. W., Zhu, S. and Lau, K. M. 2018. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands. Nanotechnology 29(22), article number: 225601. (10.1088/1361-6528/aab53b)
- Zhu, S., Shi, B., Li, Q. and Lau, K. M. 2018. Room-temperature electrically-pumped 15 ?m InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si. Optics Express 26(11), pp. 14514-14523. (10.1364/OE.26.014514)
- Shi, B., Li, Q. and Lau, K. M. 2018. Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters. Journal of Applied Physics 123(19), article number: 193104. (10.1063/1.5029255)
- Hu, Y., Yip, P. S., Tang, C. W., Lau, K. M. and Li, Q. 2018. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors. Semiconductor Science and Technology 33(4), article number: 45005. (10.1088/1361-6641/aaa224)
- Hu, Y., Jiang, H., Lau, K. M. and Li, Q. 2018. Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric. Semiconductor Science and Technology 33(4), article number: 45004. (10.1088/1361-6641/aaaa5f)
- Shi, B., Zhu, S., Li, Q., Wan, Y., Hu, E. L. and Lau, K. M. 2018. Continuous-wave optically pumped 1.55 μm InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on silicon. ACS Photonics 4(2), pp. 204-210. (10.1021/acsphotonics.6b00731)
2017
- Li, Q. and Lau, K. M. 2017. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics. Progress in Crystal Growth and Characterization of Materials 63(4), pp. 105-120. (10.1016/j.pcrysgrow.2017.10.001)
- Han, Y., Li, Q., Zhu, S., Ng, K. W. and Lau, K. M. 2017. Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths. Applied Physics Letters 111(21), article number: 212101. (10.1063/1.5005173)
- Li, Q., Lai, B. and Lau, K. M. 2017. Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer. Applied Physics Letters 111(17), article number: 172103. (10.1063/1.5000100)
- Wan, Y. et al. 2017. O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si. Optics Express 25(22), pp. 26853-26860. (10.1364/OE.25.026853)
- Han, Y., Li, Q. and Lau, K. M. 2017. Tristate memory cells using double-peaked fin-array III-V tunnel diodes monolithically grown on (001) silicon substrates. IEEE Transactions on Electron Devices 64(10), pp. 4078-4083. (10.1109/TED.2017.2738675)
- Wan, Y. et al. 2017. Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates. Optics Express 25(22), pp. 27715-27723. (10.1364/OE.25.027715)
- Wan, Y. et al. 2017. 1.3 μm submilliamp threshold quantum dot micro-lasers on Si. Optica 4(8), pp. 940-944. (10.1364/OPTICA.4.000940)
- Han, Y., Li, Q. and Lau, K. M. 2017. Fin-array tunneling trigger with tunable hysteresis on (001) silicon substrate. IEEE Electron Device Letters 38(5), pp. 556-559. (10.1109/LED.2017.2689027)
- Shi, B., Zhu, S., Li, Q., Tang, C. W., Wan, Y., Hu, E. L. and Lau, K. M. 2017. 1.55 lm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si. Applied Physics Letters 110(12), article number: 121109. (10.1063/1.4979120)
- Norman, J. et al. 2017. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. Optics Express 25(4), pp. 3927-3934. (10.1364/OE.25.003927)
2016
- Li, Q., Jiang, H. and Lau, K. M. 2016. Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon. Journal of Crystal Growth 454, pp. 19-24. (10.1016/j.jcrysgro.2016.08.051)
- Li, Q., Wan, Y., Liu, A. Y., Gossard, A. C., Bowers, J. E., Hu, E. L. and Lau, K. M. 2016. 1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon. Optics Express 24(18), pp. 21038-21045. (10.1364/OE.24.021038)
- Han, Y., Li, Q., Chang, S., Hsu, W. and Lau, K. M. 2016. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon. Applied Physics Letters 108(24), pp. 242105. (10.1063/1.4953839)
- Han, Y., Li, Q. and Lau, K. M. 2016. Monolithic integration of tunnel diode based inverters on exact (001) Si substrates. IEEE Electron Device Letters 37(6), pp. 717-720. (10.1109/LED.2016.2552219)
- Wan, Y. et al. 2016. Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates. Applied Physics Letters 108(22), article number: 221101. (10.1063/1.4952600)
- Wan, Y., Li, Q., Liu, A. Y., Gossard, A. C., Bowers, J. E., Hu, E. L. and Lau, K. M. 2016. Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. Optics Letters 41(7), pp. 1664-1667. (10.1364/OL.41.001664)
- Li, Q., Han, Y., Lu, X. and Lau, K. M. 2016. GaAs-InGaAs-GaAs fin-array tunnel diodes on (001) Si substrates with room-temperature peak-to-valley current ratio of 5.4. IEEE Electron Device Letters 37(1), pp. 24-27. (10.1109/LED.2015.2499603)
2015
- Li, Q., Ng, K. W. and Lau, K. M. 2015. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon. Applied Physics Letters 106(7), article number: 72105. (10.1063/1.4913432)
- Wang, Y., Li, Q., Geng, Y., Shi, B. and Lau, K. M. 2015. InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band. Applied Physics Letters 107(8), article number: 81106. (10.1063/1.4929441)
2014
- Li, Q., Tang, C. W. and Lau, K. M. 2014. Growth of ultra-high mobility In0.52Al0.48As/InxGa1−xAs (x ≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition. Applied Physics Express 7(4), article number: 45502. (10.7567/APEX.7.045502)
Articles
- Ratiu, B. et al. 2025. Vortex beam lasing from III-V nanowires epitaxially grown on silicon-on-insulator. Laser and Photonics Reviews, article number: e01297. (10.1002/lpor.202501297)
- Yan, Z. et al. 2025. MOCVD-grown InAs/InP quantum dot lasers with low threshold current. Optics Express 33(15), pp. 31195-31203. (10.1364/OE.568365)
- Park, J. et al. 2025. Low threshold InAs/InP quantum dot lasers. Optics Express 33(9), pp. 19158-19165. (10.1364/OE.561471)
- Brown, R. et al. 2025. 13 µm cutoff InAs/GaSb type-II superlattice nBn detectors with high quantum efficiency grown by MOCVD. APL Photonics 10(1), article number: 16102. (10.1063/5.0231448)
- Dear, C. et al. 2025. The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots. Journal of Physics D: Applied Physics 58, article number: 125104. (10.1088/1361-6463/adabf1)
- Yuan, J. et al. 2024. Indium-flush technique for C-band InAs/InP quantum dots. APL Materials 12(12), article number: 121109. (10.1063/5.0239360)
- Temu, B., Yan, Z., Ratiu, B., Oh, S. S. and Li, Q. 2024. Room temperature lasing from InGaAs quantum well nanowires on silicon-on-insulator substrates. Applied Physics Letters 125(22), article number: 223501. (10.1063/5.0237589)
- Liu, S. et al. 2024. Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon. Applied Physics Letters 125(8), article number: 82102. (10.1063/5.0219507)
- Yan, Z. and Li, Q. 2024. Recent progress in epitaxial growth of dislocation tolerant and dislocation free III-V lasers on silicon. Journal of Physics D: Applied Physics 57(21), article number: 213001. (10.1088/1361-6463/ad26cd)
- Yan, Z. et al. 2023. Lateral tunnel epitaxy of GaAs in lithographically defined cavities on 220 nm silicon-on-insulator. Crystal Growth and Design 23(11), pp. 7821-7828. (10.1021/acs.cgd.3c00633)
- Ratiu, B. et al. 2023. Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator. Optics Express 31(22), pp. 36668-36676. (10.1364/OE.499696)
- Jia, H. et al. 2023. Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate. Applied Physics Letters 122(11), article number: 111108. (10.1063/5.0142391)
- Messina, C. et al. 2023. Deformed honeycomb lattices of InGaAs nanowires grown on silicon-on-insulator for photonic crystal surface-emitting lasers. Advanced Optical Materials 11(5), article number: 2201809. (10.1002/adom.202201809)
- Brown, R. et al. 2022. Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD. Journal of Crystal Growth 598, article number: 126860. (10.1016/j.jcrysgro.2022.126860)
- Chen, B. et al. 2020. Low dark current high gain InAs quantum dot avalanche photodiodes monolithically grown on Si. ACS Photonics 7(2), pp. 528–533. (10.1021/acsphotonics.9b01709)
- Wan, Y. et al. 2020. Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si. IEEE Journal of Selected Topics in Quantum Electronics 26, article number: 1900409. (10.1109/JSTQE.2020.2964381)
- Kim, H. et al. 2019. Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE. Optics Express 27(23), pp. 33205-33216. (10.1364/OE.27.033205)
- Shang, C. et al. 2019. Low-threshold epitaxially grown 1.3 μm InAs quantum dot lasers on patterned (001) Si. IEEE Journal of Selected Topics in Quantum Electronics 25(6), article number: 1502207. (10.1109/JSTQE.2019.2927581)
- Shi, B., Han, Y., Li, Q. and Lau, K. M. 2019. 1.55 μm lasers epitaxially grown on silicon. IEEE Journal of Selected Topics in Quantum Electronics 25(6), article number: 1900711. (10.1109/JSTQE.2019.2927579)
- Huang, J. et al. 2019. Defect characterization of InAs/InGaAs quantum dot p-i-n photodetector grown on GaAs-on-V-grooved-Si substrate. ACS Photonics 6(5), pp. 1100-1105. (10.1021/acsphotonics.8b01707)
- Han, Y., Ng, W., Xue, Y., Li, Q., Wong, K. S. and Lau, K. M. 2019. Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator. Optics Letters 44(4), pp. 767-770. (10.1364/OL.44.000767)
- Rajeev, A. et al. 2019. III-V Superlattices on InP/Si metamorphic buffer Layers for λ≈4.8 μm quantum cascade lasers. physica status solidi (a) 216(1), article number: 1800493. (10.1002/pssa.201800493)
- Zhu, S., Shi, B., Li, Q. and Lau, K. M. 2018. 1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon. Applied Physics Letters 113(22), article number: 221103. (10.1063/1.5055803)
- Vaisman, M. et al. 2018. GaAs solar Ccells on nanopatterned Si substrates. IEEE Journal of Photovoltaics 8(6), pp. 1635-1640. (10.1109/JPHOTOV.2018.2871423)
- Han, Y. et al. 2018. Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands. Optica 5(8), pp. 918-923. (10.1364/OPTICA.5.000918)
- Han, Y., Li, Q., Ng, K. W., Zhu, S. and Lau, K. M. 2018. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands. Nanotechnology 29(22), article number: 225601. (10.1088/1361-6528/aab53b)
- Zhu, S., Shi, B., Li, Q. and Lau, K. M. 2018. Room-temperature electrically-pumped 15 ?m InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si. Optics Express 26(11), pp. 14514-14523. (10.1364/OE.26.014514)
- Shi, B., Li, Q. and Lau, K. M. 2018. Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters. Journal of Applied Physics 123(19), article number: 193104. (10.1063/1.5029255)
- Hu, Y., Yip, P. S., Tang, C. W., Lau, K. M. and Li, Q. 2018. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors. Semiconductor Science and Technology 33(4), article number: 45005. (10.1088/1361-6641/aaa224)
- Hu, Y., Jiang, H., Lau, K. M. and Li, Q. 2018. Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric. Semiconductor Science and Technology 33(4), article number: 45004. (10.1088/1361-6641/aaaa5f)
- Shi, B., Zhu, S., Li, Q., Wan, Y., Hu, E. L. and Lau, K. M. 2018. Continuous-wave optically pumped 1.55 μm InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on silicon. ACS Photonics 4(2), pp. 204-210. (10.1021/acsphotonics.6b00731)
- Li, Q. and Lau, K. M. 2017. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics. Progress in Crystal Growth and Characterization of Materials 63(4), pp. 105-120. (10.1016/j.pcrysgrow.2017.10.001)
- Han, Y., Li, Q., Zhu, S., Ng, K. W. and Lau, K. M. 2017. Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths. Applied Physics Letters 111(21), article number: 212101. (10.1063/1.5005173)
- Li, Q., Lai, B. and Lau, K. M. 2017. Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer. Applied Physics Letters 111(17), article number: 172103. (10.1063/1.5000100)
- Wan, Y. et al. 2017. O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si. Optics Express 25(22), pp. 26853-26860. (10.1364/OE.25.026853)
- Han, Y., Li, Q. and Lau, K. M. 2017. Tristate memory cells using double-peaked fin-array III-V tunnel diodes monolithically grown on (001) silicon substrates. IEEE Transactions on Electron Devices 64(10), pp. 4078-4083. (10.1109/TED.2017.2738675)
- Wan, Y. et al. 2017. Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates. Optics Express 25(22), pp. 27715-27723. (10.1364/OE.25.027715)
- Wan, Y. et al. 2017. 1.3 μm submilliamp threshold quantum dot micro-lasers on Si. Optica 4(8), pp. 940-944. (10.1364/OPTICA.4.000940)
- Han, Y., Li, Q. and Lau, K. M. 2017. Fin-array tunneling trigger with tunable hysteresis on (001) silicon substrate. IEEE Electron Device Letters 38(5), pp. 556-559. (10.1109/LED.2017.2689027)
- Shi, B., Zhu, S., Li, Q., Tang, C. W., Wan, Y., Hu, E. L. and Lau, K. M. 2017. 1.55 lm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si. Applied Physics Letters 110(12), article number: 121109. (10.1063/1.4979120)
- Norman, J. et al. 2017. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. Optics Express 25(4), pp. 3927-3934. (10.1364/OE.25.003927)
- Li, Q., Jiang, H. and Lau, K. M. 2016. Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon. Journal of Crystal Growth 454, pp. 19-24. (10.1016/j.jcrysgro.2016.08.051)
- Li, Q., Wan, Y., Liu, A. Y., Gossard, A. C., Bowers, J. E., Hu, E. L. and Lau, K. M. 2016. 1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon. Optics Express 24(18), pp. 21038-21045. (10.1364/OE.24.021038)
- Han, Y., Li, Q., Chang, S., Hsu, W. and Lau, K. M. 2016. Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon. Applied Physics Letters 108(24), pp. 242105. (10.1063/1.4953839)
- Han, Y., Li, Q. and Lau, K. M. 2016. Monolithic integration of tunnel diode based inverters on exact (001) Si substrates. IEEE Electron Device Letters 37(6), pp. 717-720. (10.1109/LED.2016.2552219)
- Wan, Y. et al. 2016. Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates. Applied Physics Letters 108(22), article number: 221101. (10.1063/1.4952600)
- Wan, Y., Li, Q., Liu, A. Y., Gossard, A. C., Bowers, J. E., Hu, E. L. and Lau, K. M. 2016. Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. Optics Letters 41(7), pp. 1664-1667. (10.1364/OL.41.001664)
- Li, Q., Han, Y., Lu, X. and Lau, K. M. 2016. GaAs-InGaAs-GaAs fin-array tunnel diodes on (001) Si substrates with room-temperature peak-to-valley current ratio of 5.4. IEEE Electron Device Letters 37(1), pp. 24-27. (10.1109/LED.2015.2499603)
- Li, Q., Ng, K. W. and Lau, K. M. 2015. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon. Applied Physics Letters 106(7), article number: 72105. (10.1063/1.4913432)
- Wang, Y., Li, Q., Geng, Y., Shi, B. and Lau, K. M. 2015. InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band. Applied Physics Letters 107(8), article number: 81106. (10.1063/1.4929441)
- Li, Q., Tang, C. W. and Lau, K. M. 2014. Growth of ultra-high mobility In0.52Al0.48As/InxGa1−xAs (x ≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition. Applied Physics Express 7(4), article number: 45502. (10.7567/APEX.7.045502)
Conferences
- Jia, H. et al. 2025. Low threshold InAs/InP quantum dot lasers on Si. Presented at: IEEE Silicon Photonics Conference (SiPhotonics), London, UK, 14-17 April 20252025 IEEE Silicon Photonics Conference (SiPhotonics). IEEE, (10.1109/SiPhotonics64386.2025.10984482)
- Yan, Z., Zhang, W., Ebert, M., Ratiu, B., Reed, G. T., Thomson, D. J. and Li, Q. 2025. Optically pumped lasing from InP membranes grown on silicon-on-insulator by tunnel epitaxy. Presented at: IEEE Silicon Photonics Conference (SiPhotonics), London, UK, 14-17 April 20252025 IEEE Silicon Photonics Conference (SiPhotonics). IEEE, (10.1109/SiPhotonics64386.2025.10985302)
- Yi, X. et al. 2025. Excess noise in AlxGa1-xAs0.56Sb0.44 lattice matched to InP at room temperature. Presented at: OPTO 2025, San Francisco, California, USA, 25-31 January 2025Proceedings Optical Components and Materials XXII, Vol. 13362. SPIE, (10.1117/12.3042894)
- Yan, Z., Zhang, W., Ebert, M., Ratiu, B., Reed, G. T., Thomson, D. J. and Li, Q. 2024. Large-area uniform III-V membranes grown on silicon-on-insulator by lateral tunnel epitaxy. Presented at: 2024 IEEE Photonics Conference (IPC), Rome, Italy, 1-14 November 20242024 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC60965.2024.10799698)
- Gong, Y., Messina, C., Wong, S., Abouzaid, O., Ratiu, B., Li, Q. and Oh, S. S. 2022. Topological lasers with epitaxially grown InGaAs nanowires on a SOI substrate. Presented at: Conference on Lasers and Electro-Optics, QELS_Fundamental Science 2022, San Jose, US, 15–20 May 2022Conference on Lasers and Electro-Optics. Technical Digest Series San Jose, US: Optica Publishing Group, (10.1364/CLEO_QELS.2022.FF2C.1)
- Shang, C. et al. 2019. Triple reduction of threshold current for 1.3 ?m InAs quantum dot lasers on patterned, on-axis (001) Si. Presented at: CLEO: Science and Innovations 2019, San Jose, California, USA, 5–10 May 2019Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, 2019). OSA Publishing pp. -., (10.1364/CLEO_SI.2019.STu3N.1)
- Han, Y., Zhu, S., Shi, B., Li, Q. and Lau, K. M. 2019. III-V lasers emitting at 1.3 to 1.5 µm grown on (001) silicon by MOCVD (invited). Presented at: CLEO: Science and Innovations 2019, San Jose, California, USA, 5–10 May 2019Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, 2019). OSA Publishing, (10.1364/CLEO_SI.2019.STh3N.5)
- Huynh, S. H., Kim, H., Gong, Y., Azizur-Rahman, K., Li, Q. and Huffaker, D. 2019. Catalyst-free selective-area metalorganic chemical vapour deposition of InGaAs/InGaP core-shell nanowire arrays. Presented at: UK Semiconductors 2019 Conference, Sheffield, United Kingdom, 10-11 July 2019.
- Li, Q., Lai, B. and Lau, K. M. 2017. Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer. Applied Physics Letters 111(17), article number: 172103. (10.1063/1.5000100)
- Wan, Y., Li, Q., Liu, A. Y., Gossard, A. C., Bowers, J. E., Hu, E. L. and Lau, K. M. 2016. Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. Optics Letters 41(7), pp. 1664-1667. (10.1364/OL.41.001664)
- Li, Q., Han, Y., Lu, X. and Lau, K. M. 2016. GaAs-InGaAs-GaAs fin-array tunnel diodes on (001) Si substrates with room-temperature peak-to-valley current ratio of 5.4. IEEE Electron Device Letters 37(1), pp. 24-27. (10.1109/LED.2015.2499603)
- Li, Q., Ng, K. W. and Lau, K. M. 2015. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon. Applied Physics Letters 106(7), article number: 72105. (10.1063/1.4913432)
Research
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Research interest |
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Active Research Grants |
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Completed Research Grants |
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Teaching
Lab supervisor for PX1150 Experimental Physics
Co-organiser PX3242 Semiconductor Devices and Applications (from 24/25)
Deputy Module Organiser for PX4131/PXT301 Semiconductor Fabrication
Year 3 Project: Low dimensional III-V compound semiconductor structures
Year 4/MPhys Project: Epitaxial quantum dot lasers on silicon for telecommunications and 3D sensing applications
Year 4/MPhys Project: III-V nanowires on silicon-on-insulator for advanced photonic devices
Biography
Education
Ph.D., Electronic and Computer Engineering, Hong Kong University of Science and Technology, 2014
B.S., Microelectronics, Peking University, 2009
Academic positions
- 2024 - present: Reader, Cardiff University
- 2021 - 2024: Senior Lecturer (Associate Professor), Cardiff University
- 2018 - 2021: Lecturer, Cardiff University
- 2015 - 2018: Research Assistant Professor, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology
Speaking engagements
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Seminars and Invited Talks |
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03/2025, Seminar, The University of Sheffield, UK 02/2025, Invited talk, Bremen-Cardiff alliance “Semiconductor Physics” Workshop, Cardiff 01/2025, invited talk, Photonics West, San Francisco USA 11/2024, Seminar, Chinese academy of sciences, Beijing 08/2024, Seminar, Global Mentoring Conference, UST Korea 05/2024, Rump Session, ICMOVPE XXI conference, Las Vegas, USA 08/2023, Invited talk, ACCGE-23/OMVPE-21, Tucson USA
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Committees and reviewing
Programme comittee member of the Compound Semiconductor Week (CSW) 2026 Conference to be held in Japan, from May 24 to 28, 2026
Programme comittee member of the 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE
XXI), May 12-17, 2024 in Las Vegas, USA
Supervisions
I am interested in supervising PhD students in the areas of:
- Semiconductor epitaxy
- Compound semiconductor materials and devices
Current supervision
Contact Details
LiQ44@cardiff.ac.uk
+44 29208 74665
Translational Research Hub, Room 1.02, Maindy Road, Cathays, Cardiff, CF24 4HQ
+44 29208 74665
Translational Research Hub, Room 1.02, Maindy Road, Cathays, Cardiff, CF24 4HQ
