Dr Sam Shutts

2023

• Enderson, A. et al. 2023. Monolithic InAs QDs based active-passive integration for photonic integrated circuits. Presented at: 2023 IEEE Photonics Conference (IPC), 12-16 November 2023Proceedings 2023 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC57732.2023.10360634)
• Albeladi, F. T. et al. 2023. Multi-mode interference reflector for integrated photonics. Presented at: 2023 IEEE Photonics Conference (IPC), 12-16 November 2023Proceedings 2023 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC57732.2023.10360650)
• Albeladi, F. T. et al. 2023. Low-loss III-V photonics and high efficiency grating couplers incorporating low-index AlOx layers. Presented at: 2023 IEEE Photonics Conference (IPC), 12-16 November 2023Proceedings 2023 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC57732.2023.10360787)
• Albeladi, F. T. et al. 2023. Design and characterisation of multi-mode interference reflector lasers for integrated photonics. Journal of Physics D: Applied Physics 56(38), article number: 384001. (10.1088/1361-6463/acdb80)
• Gillgrass, S. J. et al. 2023. Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs. Journal of Physics D: Applied Physics 56(15), article number: 154002. (10.1088/1361-6463/acc040)
• Hentschel, C. et al. 2023. Gain measurements on VCSEL material using segmented contact technique. Journal of Physics D: Applied Physics 56(7), pp. 74003. (10.1088/1361-6463/acaf0b)

2022

• Albeladi, F. T. et al. 2022. Multi-mode interference reflector based InAs-QD laser. Presented at: 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 16-19 October 2022Proceedings of 28th International Semiconductor Laser Conference (ISLC). IEEE, (10.23919/ISLC52947.2022.9943389)
• Baker, J. et al. 2022. VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications. IET Optoelectronics (10.1049/ote2.12082)
• Liu, J. et al. 2022. Theoretical analysis and modelling of degradation for III–V lasers on Si. Journal of Physics D: Applied Physics 55(40), article number: 404006. (10.1088/1361-6463/ac83d3)
• Baker, J. et al. 2022. VCSEL quick fabrication for assessment of large diameter epitaxial wafers. IEEE Photonics Journal 14(3) (10.1109/JPHOT.2022.3169032)
• Deng, H. et al. 2022. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. Journal of Physics D: Applied Physics 55(21), article number: 215105. (10.1088/1361-6463/ac55c4)
• Jarvis, L. K. et al. 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. Presented at: SPIE OPTO, 2022, 22-27 January 2022. Society of Photo-optical Instrumentation Engineers, (10.1117/12.2614632)

2021

• Maglio, B. et al. 2021. The limits to peak modal gain in p-modulation doped indium arsenide quantum dot laser diodes. Presented at: 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, 18-21 October 20212021 IEEE Photonics Conference (IPC). IEEE pp. 1-2., (10.1109/IPC48725.2021.9592852)
• Baker, J., Gillgrass, S., Allford, C. P., Hentschel, C., Davies, J. I., Shutts, S. and Smowton, P. M. 2021. Sub-mA threshold current vertical cavity surface emitting lasers with a simple fabrication process. Presented at: 2021 IEEE Photonics Conference (IPC), 18-21 October 2021Proceedings of the 2021 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC48725.2021.9592977)
• Hentschel, C. et al. 2021. Gain measurements on vertical cavity surface emitting laser material using segmented contact technique. Presented at: 2021 IEEE Photonics Conference (IPC), 18-21 October 20212021 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC48725.2021.9592961)
• Baker, J. et al. 2021. Quick fabrication VCSELs for characterisation of epitaxial material. Applied Sciences 11(20), article number: 9369. (10.3390/app11209369)
• Li, Z., Shutts, S., Xue, Y., Luo, W., Lau, K. M. and Smowton, P. M. 2021. Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate. Applied Physics Letters 118, article number: 131101. (10.1063/5.0043815)
• Yang, J. et al. 2021. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. Journal of Physics D: Applied Physics 54(3), article number: 35103. (10.1088/1361-6463/abbb49)
• Mahoney, J. et al. 2021. QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots. Presented at: CLEO: Applications and Technology 2021, 9-14 May 2021OSA Technical Digest. , (10.1364/CLEO_AT.2021.JTU3A.167)

2020

• Li, Z. et al. 2020. Monolithic InP quantum dot mode-locked lasers emitting at 730 nm. IEEE Photonics Technology Letters 32(17), pp. 1073-1076.
• Alharbi, R., Li, Z., Allford, C. P., Shutts, S., Krysa, A. B. and Smowton, P. 2020. Design and realisation of InP mode-locked lasers emitting in the 730nm wavelength range. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.

2019

• Li, Z., Shutts, S., Allford, C. P., Shi, B., Luo, W., Lau, K. M. and Smowton, P. M. 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 20192019 IEEE Photonics Conference (IPC). IEEE pp. 1., (10.1109/IPCon.2019.8908479)
• Li, Z., Shutts, S., Allford, C. P., Krysa, A. B. and Smowton, P. M. 2019. InP quantum dot mode-locked lasers and materials studies. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 20192019 IEEE Photonics Conference (IPC). IEEE pp. 1., (10.1109/IPCon.2019.8908334)
• Shutts, S. et al. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25(6), article number: 1900406. (10.1109/JSTQE.2019.2915994)
• Zaouris, D. et al. 2019. MacV: VCSELs for miniature atomic clocks. Presented at: 2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC), Orlando, FL, USA, 14-18 April 20192019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC). IEEE pp. 1., (10.1109/FCS.2019.8856005)
• Le Boulbar, E. D. et al. 2019. Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019, Angers, France, 9-13 July 20192019 21st International Conference on Transparent Optical Networks (ICTON). IEEE pp. 1-4., (10.1109/ICTON.2019.8840542)
• Le Boulbar, E. D. et al. 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
• Li, Z., Shutts, S., Allford, C. P., Krysa, A. B. and Smowton, P. M. 2019. 12.5-GHz InP quantum dot monolithically mode-locked lasers emitting at 740 nm. Presented at: CLEO: Science and Innovations 2019, San Jose, CA, USA, 5-10 May 2019CLEO: Science and Innovations 2019. Optical Society of America pp. SM3N.6., (10.1364/CLEO_SI.2019.SM3N.6)
• Allford, C. P. et al. 2019. InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.
• Allford, C., Li, Z., Shutts, S., Shi, B., Luo, W., Lau, K. M. and Smowton, P. 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.
• Li, Z., Allford, C. P., Shutts, S., Krysa, A. B. and Smowton, P. 2019. Monolithically mode-locked self-assembled InP quantum dot lasers. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
• Li, Z., Shutts, S., Allford, C., Shi, B., Lua, W., Lau, K. M. and Smowton, P. 2019. Monolithic growth InAs quantum dots lasers on (001) silicon emitting at 1.5 um. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
• Jarvis, L. et al. 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.

2018

• Shutts, S., Allford, C. P., Spinnler, C., Li, Z., Tang, M., Liu, H. and Smowton, P. M. 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference, Santa Fe, NM, USA, 16-19 September 20182018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE pp. 85-86., (10.1109/ISLC.2018.8516178)
• Liao, M. et al. 2018. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photonics Research 6(11), pp. 1062-1066. (10.1364/PRJ.6.001062)
• Allford, C. P., Gillgrass, S., Al-Ghamdi, M. S., Krysa, A. B., Shutts, S. and Smowton, P. 2018. Barrier width effects in InAsP/AlGaInP quantum dot lasers. Presented at: UK Semiconductor Conference 2018 (UKSC 2018), Sheffield, UK, 4-5 July 2018.

2016

• Krysa, A. B., Roberts, J. S., Devenson, J., Beanland, R., Karomi, I., Shutts, S. and Smowton, P. M. 2016. InAsP/AlGaInP/GaAs QD laser operating at ~770 nm. Journal of Physics: Conference Series 740(1), article number: 12008. (10.1088/1742-6596/740/1/012008)
• Chen, S. et al. 2016. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10, pp. 307-311. (10.1038/nphoton.2016.21)
• Orchard, J. R. et al. 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express 24(6), pp. 6196-6202. (10.1364/OE.24.006196)

2015

• Karomi, I., Smowton, P. M., Shutts, S., Krysa, A. B. and Beanland, R. 2015. InAsP quantum dot lasers grown by MOVPE. Optics Express 23(21), pp. 27282-27291. (10.1364/OE.23.027282)
• Shutts, S., Elliott, S., Smowton, P. M. and Krysa, A. B. 2015. Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing. Semiconductor Science and Technology 30(4), article number: 44002. (10.1088/0268-1242/30/4/044002)

2014

• Shutts, S., Smowton, P. M. and Krysa, A. B. 2014. Dual-wavelength InP quantum dot lasers. Applied Physics Letters 104(24), article number: 241106. (10.1063/1.4883857)

2013

• Shutts, S., Smowton, P. M. and Krysa, A. B. 2013. InP quantum dot lasers with temperature insensitive operating wavelength. Applied Physics Letters 103(6), article number: 61106. (10.1063/1.4817732)
• Al-Ghamdi, M. S., Smowton, P. M., Shutts, S., Blood, P., Beanland, R. and Krysa, A. B. 2013. Absorption, Gain, and Threshold in InP/AlGaInP Quantum Dot Laser Diodes. IEEE Journal of Quantum Electronics 49(4), pp. 389-394. (10.1109/JQE.2013.2245496)
• Elliott, S., Hempel, M., Shutts, S., Zeimer, U., Smowton, P. M. and Tomm, J. W. 2013. Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers. Presented at: Novel In-Plane Semiconductor Lasers XII, San Francisco, USA, 4-7 February 2013 Presented at Belyanin, A. A. and Smowton, P. eds.Novel In-Plane Semiconductor Lasers XII. Proceedings of SPIE Vol. 8640. Bellingham: SPIE pp. 86401H., (10.1117/12.2008319)

2012

• Shutts, S. 2012. Monolithic dual-wavelength InP/AlGaInP quantum dot lasers. PhD Thesis, Cardiff University.

2011

• Smowton, P. M., Elliott, S., Shutts, S., Al-Ghamdi, M. and Krysa, A. 2011. Temperature-dependent threshold current in InP Quantum-Dot Lasers. IEEE Journal of Selected Topics in Quantum Electronics 17(5), pp. 1343-1348. (10.1109/JSTQE.2011.2115235)
• Shutts, S., Edwards, G., Elliott, S., Smowton, P. M. and Krysa, A. B. 2011. Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011 Presented at Belyanin, A. and Smowton, P. M. eds.Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011, Vol. 7953. SPIE Proceedings Vol. 7953. Bellingham, WA: IEEE pp. 795308., (10.1117/12.876454)
• Smowton, P. M., Elliott, S. N., Shutts, S., Michell, G., Al-Ghamdi, S. M. and Krysa, A. B. 2011. Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers. Presented at: 2011 Conference on Lasers and Electro-Optics (CLEO), Baltimore Convention Center, Baltimore, MD, USA, 1-6 May 2011CLEO: Science and Innovations 2011. pp. CFL1., (10.1364/CLEO_SI.2011.CFL1)

2010

• Smowton, P. M., Al-Ghamdi, M., Shutts, S., Edwards, G., Hutchings, M. and Krysa, A. 2010. Effect of growth temperature on InP QD lasers. IEEE Photonics Technology Letters 22(2), pp. 88-90. (10.1109/LPT.2009.2036245)