Dr Sam Shutts

2025

• Baker, J. et al. 2025. Thermal performance of 940 nm AlGaAs-Based VCSELs grown on germanium. IEEE Photonics Journal 17 (2) 1501104. (10.1109/jphot.2025.3552951)
• Gillgrass, S. J. et al. 2025. AlGaAs VSCELs grown on thin 150 mm germanium substrates. JPhys: Photonics 7 (3) 035033. (10.1088/2515-7647/adef1f)
• Mishra, P. et al. 2025. Achieving selectivity and reduced absorption for low loss monolithic InAs QD based III-V photonic integration. Journal of Physics D: Applied Physics 58 (26) 265104. (10.1088/1361-6463/ade450)
• Mishra, P. et al. 2025. High temperature operation of co-doped InAs quantum dot laser for O-band emission. IEEE Photonics Journal 17 (3) 0600606. (10.1109/jphot.2025.3560443)
• Peach, T. et al. 2025. A hybrid electron beam lithography approach to wafer scale up of 150 mm InP ridge lasers. IEEE Transactions on Semiconductor Manufacturing 38 (4), pp.783-789. (10.1109/tsm.2025.3601735)

2024

• Albeladi, F. T. et al., 2024. InAs quantum dot-based one- and two-port multimode interference reflectors for integrated photonic devices: design, fabrication, and evaluation. Presented at: SPIE OPTO 2024 San Francisco, CA, USA January 2024. Proceedings Novel In-Plane Semiconductor Lasers XXIII. Vol. 12905.SPIE. , pp.40. (10.1117/12.3003224)
• Baker, J. et al. 2024. Improved thermal performance of VCSELs on germanium substrates. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717337)
• Ejidike, I. et al., 2024. Modelling optical coherence tomography for biophotonics and photobiology using an electronically tunable mode-locked laser diode. Presented at: SPIE OPTO 2024 San Francisco, CA, USA January 2024. Proceedings SPIE 12880 Physics and Simulation of Optoelectronic Devices XXXII. Vol. 12880A.SPIE. (10.1117/12.2690962)
• Gillgrass, S. et al. 2024. First demonstration of 940-nm VCSELs fabricated over 200-mm GaAs- and Ge-substrates. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE(10.1109/islc57752.2024.10717349)
• Mishra, P. et al. 2024. Achieving O-band InAs quantum dot laser operation at 200 °C. Presented at: 2024 IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717409)
• Salmond, B. et al. 2024. Fabricating distributed feedback laser gratings with bismuth and gold focused ion beams. Journal of Vacuum Science & Technology B 42 (6) 062214. (10.1116/6.0004056)

2023

• Albeladi, F. T. et al. 2023. Design and characterisation of multi-mode interference reflector lasers for integrated photonics. Journal of Physics D: Applied Physics 56 (38) 384001. (10.1088/1361-6463/acdb80)
• Albeladi, F. T. et al. 2023. Low-loss III-V photonics and high efficiency grating couplers incorporating low-index AlOx layers. Presented at: 2023 IEEE Photonics Conference (IPC) 12-16 November 2023. Proceedings 2023 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC57732.2023.10360787)
• Albeladi, F. T. et al. 2023. Multi-mode interference reflector for integrated photonics. Presented at: 2023 IEEE Photonics Conference (IPC) 12-16 November 2023. Proceedings 2023 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC57732.2023.10360650)
• Enderson, A. et al. 2023. Monolithic InAs QDs based active-passive integration for photonic integrated circuits. Presented at: 2023 IEEE Photonics Conference (IPC) 12-16 November 2023. Proceedings 2023 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC57732.2023.10360634)
• Gillgrass, S. J. et al. 2023. Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs. Journal of Physics D: Applied Physics 56 (15) 154002. (10.1088/1361-6463/acc040)
• Hentschel, C. et al. 2023. Gain measurements on VCSEL material using segmented contact technique. Journal of Physics D: Applied Physics 56 (7), pp.074003. (10.1088/1361-6463/acaf0b)

2022

• Albeladi, F. T. et al. 2022. Multi-mode interference reflector based InAs-QD laser. Presented at: 28th International Semiconductor Laser Conference (ISLC) Matsue, Japan 16-19 October 2022. Proceedings of 28th International Semiconductor Laser Conference (ISLC). IEEE. (10.23919/ISLC52947.2022.9943389)
• Baker, J. et al. 2022. VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications. IET Optoelectronics (10.1049/ote2.12082)
• Baker, J. et al. 2022. VCSEL quick fabrication for assessment of large diameter epitaxial wafers. IEEE Photonics Journal 14 (3)(10.1109/JPHOT.2022.3169032)
• Deng, H. et al., 2022. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. Journal of Physics D: Applied Physics 55 (21) 215105. (10.1088/1361-6463/ac55c4)
• Jarvis, L. K. et al. 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. Presented at: SPIE OPTO, 2022 22-27 January 2022. Society of Photo-optical Instrumentation Engineers(10.1117/12.2614632)
• Liu, J. et al., 2022. Theoretical analysis and modelling of degradation for III–V lasers on Si. Journal of Physics D: Applied Physics 55 (40) 404006. (10.1088/1361-6463/ac83d3)

2021

• Baker, J. et al. 2021. Quick fabrication VCSELs for characterisation of epitaxial material. Applied Sciences 11 (20) 9369. (10.3390/app11209369)
• Baker, J. et al. 2021. Sub-mA threshold current vertical cavity surface emitting lasers with a simple fabrication process. Presented at: 2021 IEEE Photonics Conference (IPC) 18-21 October 2021. Proceedings of the 2021 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC48725.2021.9592977)
• Hentschel, C. et al. 2021. Gain measurements on vertical cavity surface emitting laser material using segmented contact technique. Presented at: 2021 IEEE Photonics Conference (IPC) 18-21 October 2021. 2021 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC48725.2021.9592961)
• Li, Z. et al. 2021. Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate. Applied Physics Letters 118 131101. (10.1063/5.0043815)
• Maglio, B. et al. 2021. The limits to peak modal gain in p-modulation doped indium arsenide quantum dot laser diodes. Presented at: 2021 IEEE Photonics Conference (IPC) Vancouver, BC, Canada 18-21 October 2021. 2021 IEEE Photonics Conference (IPC). IEEE. , pp.1-2. (10.1109/IPC48725.2021.9592852)
• Mahoney, J. et al. 2021. QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots. Presented at: CLEO: Applications and Technology 2021 9-14 May 2021. OSA Technical Digest. (10.1364/CLEO_AT.2021.JTU3A.167)
• Yang, J. et al., 2021. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. Journal of Physics D: Applied Physics 54 (3) 035103. (10.1088/1361-6463/abbb49)

2020

• Alharbi, R. et al. 2020. Design and realisation of InP mode-locked lasers emitting in the 730nm wavelength range. Presented at: Novel In-Plane Semiconductor Lasers XIX San Francisco, CA, USA 3-6 February 2020.
• Li, Z. et al. 2020. Monolithic InP quantum dot mode-locked lasers emitting at 730 nm. IEEE Photonics Technology Letters 32 (17), pp.1073-1076.

2019

• Allford, C. et al. 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019) Tyndall National Institute, University College Cork, Cork, Ireland 27-28 September 2019.
• Allford, C. P. et al. 2019. InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019) Tyndall National Institute, University College Cork, Cork, Ireland 27-28 September 2019.
• Jarvis, L. et al. 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX San Francisco, CA, USA 3-6 February 2020.
• Le Boulbar, E. D. et al. 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
• Le Boulbar, E. D. et al. 2019. Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019 Angers, France 9-13 July 2019. 2019 21st International Conference on Transparent Optical Networks (ICTON). IEEE. , pp.1-4. (10.1109/ICTON.2019.8840542)
• Li, Z. et al. 2019. Monolithically mode-locked self-assembled InP quantum dot lasers. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
• Li, Z. et al. 2019. Monolithic growth InAs quantum dots lasers on (001) silicon emitting at 1.5 um. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
• Li, Z. et al. 2019. 12.5-GHz InP quantum dot monolithically mode-locked lasers emitting at 740 nm. Presented at: CLEO: Science and Innovations 2019 San Jose, CA, USA 5-10 May 2019. CLEO: Science and Innovations 2019. Optical Society of America. , pp.SM3N.6. (10.1364/CLEO_SI.2019.SM3N.6)
• Li, Z. et al. 2019. InP quantum dot mode-locked lasers and materials studies. Presented at: 2019 IEEE Photonics Conference (IPC) San Antonio, TX, USA 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE. , pp.1. (10.1109/IPCon.2019.8908334)
• Li, Z. et al. 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC) San Antonio, TX, USA 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE. , pp.1. (10.1109/IPCon.2019.8908479)
• Shutts, S. et al. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) 1900406. (10.1109/JSTQE.2019.2915994)
• Zaouris, D. et al., 2019. MacV: VCSELs for miniature atomic clocks. Presented at: 2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC) Orlando, FL, USA 14-18 April 2019. 2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC). IEEE. , pp.1. (10.1109/FCS.2019.8856005)

2018

• Allford, C. P. et al. 2018. Barrier width effects in InAsP/AlGaInP quantum dot lasers. Presented at: UK Semiconductor Conference 2018 (UKSC 2018) Sheffield, UK 4-5 July 2018.
• Liao, M. et al., 2018. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photonics Research 6 (11), pp.1062-1066. (10.1364/PRJ.6.001062)
• Shutts, S. et al. 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference Santa Fe, NM, USA 16-19 September 2018. 2018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE. , pp.85-86. (10.1109/ISLC.2018.8516178)

2016

• Chen, S. et al., 2016. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10 , pp.307-311. (10.1038/nphoton.2016.21)
• Krysa, A. B. et al., 2016. InAsP/AlGaInP/GaAs QD laser operating at ~770 nm. Journal of Physics: Conference Series 740 (1) 012008. (10.1088/1742-6596/740/1/012008)
• Orchard, J. R. et al., 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express 24 (6), pp.6196-6202. (10.1364/OE.24.006196)

2015

• Karomi, I. et al. 2015. InAsP quantum dot lasers grown by MOVPE. Optics Express 23 (21), pp.27282-27291. (10.1364/OE.23.027282)
• Shutts, S. et al. 2015. Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing. Semiconductor Science and Technology 30 (4) 044002. (10.1088/0268-1242/30/4/044002)

2014

• Shutts, S. , Smowton, P. M. and Krysa, A. B. 2014. Dual-wavelength InP quantum dot lasers. Applied Physics Letters 104 (24) 241106. (10.1063/1.4883857)

2013

• Al-Ghamdi, M. S. et al., 2013. Absorption, Gain, and Threshold in InP/AlGaInP Quantum Dot Laser Diodes. IEEE Journal of Quantum Electronics 49 (4), pp.389-394. (10.1109/JQE.2013.2245496)
• Elliott, S. et al. 2013. Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers. Presented at: Novel In-Plane Semiconductor Lasers XII San Francisco, USA 4-7 February 2013. Published in: Belyanin, A. A. and Smowton, P. eds. Novel In-Plane Semiconductor Lasers XII. Proceedings of SPIE Vol. 8640. Bellingham: SPIE. , pp.86401H. (10.1117/12.2008319)
• Shutts, S. , Smowton, P. M. and Krysa, A. B. 2013. InP quantum dot lasers with temperature insensitive operating wavelength. Applied Physics Letters 103 (6) 061106. (10.1063/1.4817732)

2012

• Shutts, S. 2012. Monolithic dual-wavelength InP/AlGaInP quantum dot lasers. PhD Thesis , Cardiff University.

2011

• Shutts, S. et al. 2011. Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X San Francisco, CA, USA 25-28 January 2011. Published in: Belyanin, A. and Smowton, P. M. eds. Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011. Vol. 7953.SPIE Proceedings Vol. 7953. Bellingham, WA: IEEE. , pp.795308. (10.1117/12.876454)
• Smowton, P. M. et al. 2011. Temperature-dependent threshold current in InP Quantum-Dot Lasers. IEEE Journal of Selected Topics in Quantum Electronics 17 (5), pp.1343-1348. (10.1109/JSTQE.2011.2115235)
• Smowton, P. M. et al. 2011. Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers. Presented at: 2011 Conference on Lasers and Electro-Optics (CLEO) Baltimore Convention Center, Baltimore, MD, USA 1-6 May 2011. CLEO: Science and Innovations 2011. , pp.CFL1. (10.1364/CLEO_SI.2011.CFL1)

2010

• Smowton, P. M. et al. 2010. Effect of growth temperature on InP QD lasers. IEEE Photonics Technology Letters 22 (2), pp.88-90. (10.1109/LPT.2009.2036245)