Professor Peter Smowton

2023

• Albeladi, F. T. et al. 2023. Design and characterisation of multi-mode interference reflector lasers for integrated photonics. Journal of Physics D: Applied Physics 56(38), article number: 384001. (10.1088/1361-6463/acdb80)
• Gillgrass, S. J. et al. 2023. Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs. Journal of Physics D: Applied Physics 56(15), article number: 154002. (10.1088/1361-6463/acc040)
• Hentschel, C. et al. 2023. Gain measurements on VCSEL material using segmented contact technique. Journal of Physics D: Applied Physics 56(7), pp. 74003. (10.1088/1361-6463/acaf0b)

2022

• Albeladi, F. T. et al. 2022. Multi-mode interference reflector based InAs-QD laser. Presented at: 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 16-19 October 2022Proceedings of 28th International Semiconductor Laser Conference (ISLC). IEEE, (10.23919/ISLC52947.2022.9943389)
• Baker, J. et al. 2022. VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications. IET Optoelectronics (10.1049/ote2.12082)
• Osypiw, A. et al. 2022. Solution-processed colloidal quantum dots for light emission. Materials Advances 3, pp. 6773-6790. (10.1039/D2MA00375A)
• Liu, J. et al. 2022. Theoretical analysis and modelling of degradation for III–V lasers on Si. Journal of Physics D: Applied Physics 55(40), article number: 404006. (10.1088/1361-6463/ac83d3)
• Baker, J. et al. 2022. VCSEL quick fabrication for assessment of large diameter epitaxial wafers. IEEE Photonics Journal 14(3) (10.1109/JPHOT.2022.3169032)
• Deng, H. et al. 2022. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. Journal of Physics D: Applied Physics 55(21), article number: 215105. (10.1088/1361-6463/ac55c4)
• Pan, S. et al. 2022. Multi-wavelength 128 Gbit s−1 λ−1 PAM4 optical transmission enabled by a 100 GHz quantum dot mode-locked optical frequency comb. Journal of Physics D: Applied Physics 55(14), article number: 144001. (10.1088/1361-6463/ac4365)
• Jarvis, L. K. et al. 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. Presented at: SPIE OPTO, 2022, 22-27 January 2022. Society of Photo-optical Instrumentation Engineers, (10.1117/12.2614632)

2021

• Maglio, B. et al. 2021. The limits to peak modal gain in p-modulation doped indium arsenide quantum dot laser diodes. Presented at: 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, 18-21 October 20212021 IEEE Photonics Conference (IPC). IEEE pp. 1-2., (10.1109/IPC48725.2021.9592852)
• Baker, J., Gillgrass, S., Allford, C. P., Hentschel, C., Davies, J. I., Shutts, S. and Smowton, P. M. 2021. Sub-mA threshold current vertical cavity surface emitting lasers with a simple fabrication process. Presented at: 2021 IEEE Photonics Conference (IPC), 18-21 October 2021Proceedings of the 2021 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC48725.2021.9592977)
• Hentschel, C. et al. 2021. Gain measurements on vertical cavity surface emitting laser material using segmented contact technique. Presented at: 2021 IEEE Photonics Conference (IPC), 18-21 October 20212021 IEEE Photonics Conference (IPC). IEEE, (10.1109/IPC48725.2021.9592961)
• Baker, J. et al. 2021. Quick fabrication VCSELs for characterisation of epitaxial material. Applied Sciences 11(20), article number: 9369. (10.3390/app11209369)
• Li, Z., Shutts, S., Xue, Y., Luo, W., Lau, K. M. and Smowton, P. M. 2021. Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate. Applied Physics Letters 118, article number: 131101. (10.1063/5.0043815)
• Yang, J. et al. 2021. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. Journal of Physics D: Applied Physics 54(3), article number: 35103. (10.1088/1361-6463/abbb49)
• Mahoney, J. et al. 2021. QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots. Presented at: CLEO: Applications and Technology 2021, 9-14 May 2021OSA Technical Digest. , (10.1364/CLEO_AT.2021.JTU3A.167)

2020

• Li, K. et al. 2020. Inversion boundary annihilation in GaAs Monolithically grown on on-axis Silicon (001). Advanced Optical Materials 8(22), article number: 2000970. (10.1002/adom.202000970)
• Lu, Y. et al. 2020. Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon. Optics Letters 45(19), pp. 5468-5471. (10.1364/OL.401042)
• Li, Z. et al. 2020. Monolithic InP quantum dot mode-locked lasers emitting at 730 nm. IEEE Photonics Technology Letters 32(17), pp. 1073-1076.
• Li, B. et al. 2020. Colloidal quantum dot hybrids: an emerging class of materials for ambient lighting. Journal of Materials Chemistry C 8(31), pp. 10676-10695. (10.1039/d0tc01349h)
• Alharbi, R., Li, Z., Allford, C. P., Shutts, S., Krysa, A. B. and Smowton, P. 2020. Design and realisation of InP mode-locked lasers emitting in the 730nm wavelength range. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.

2019

• Li, Z., Shutts, S., Allford, C. P., Shi, B., Luo, W., Lau, K. M. and Smowton, P. M. 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 20192019 IEEE Photonics Conference (IPC). IEEE pp. 1., (10.1109/IPCon.2019.8908479)
• Li, Z., Shutts, S., Allford, C. P., Krysa, A. B. and Smowton, P. M. 2019. InP quantum dot mode-locked lasers and materials studies. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 20192019 IEEE Photonics Conference (IPC). IEEE pp. 1., (10.1109/IPCon.2019.8908334)
• Shutts, S. et al. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25(6), article number: 1900406. (10.1109/JSTQE.2019.2915994)
• Zaouris, D. et al. 2019. MacV: VCSELs for miniature atomic clocks. Presented at: 2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC), Orlando, FL, USA, 14-18 April 20192019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC). IEEE pp. 1., (10.1109/FCS.2019.8856005)
• Le Boulbar, E. D. et al. 2019. Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019, Angers, France, 9-13 July 20192019 21st International Conference on Transparent Optical Networks (ICTON). IEEE pp. 1-4., (10.1109/ICTON.2019.8840542)
• Abadia, N., Samani, A., Le Boulbar, E. D., Hayes, D. and Smowton, P. M. 2019. Plasmonic integrated multimode filter. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019, Angers, France, 9-13 July 20192019 21st International Conference on Transparent Optical Networks (ICTON). IEEE, (10.1109/ICTON.2019.8840183)
• Le Boulbar, E. D. et al. 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
• Li, Z., Shutts, S., Allford, C. P., Krysa, A. B. and Smowton, P. M. 2019. 12.5-GHz InP quantum dot monolithically mode-locked lasers emitting at 740 nm. Presented at: CLEO: Science and Innovations 2019, San Jose, CA, USA, 5-10 May 2019CLEO: Science and Innovations 2019. Optical Society of America pp. SM3N.6., (10.1364/CLEO_SI.2019.SM3N.6)
• Allford, C. P. et al. 2019. InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.
• Allford, C., Li, Z., Shutts, S., Shi, B., Luo, W., Lau, K. M. and Smowton, P. 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.
• Li, Z., Allford, C. P., Shutts, S., Krysa, A. B. and Smowton, P. 2019. Monolithically mode-locked self-assembled InP quantum dot lasers. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
• Li, Z., Shutts, S., Allford, C., Shi, B., Lua, W., Lau, K. M. and Smowton, P. 2019. Monolithic growth InAs quantum dots lasers on (001) silicon emitting at 1.5 um. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
• Jarvis, L. et al. 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.

2018

• Shutts, S., Allford, C. P., Spinnler, C., Li, Z., Tang, M., Liu, H. and Smowton, P. M. 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference, Santa Fe, NM, USA, 16-19 September 20182018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE pp. 85-86., (10.1109/ISLC.2018.8516178)
• Liao, M. et al. 2018. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photonics Research 6(11), pp. 1062-1066. (10.1364/PRJ.6.001062)
• Thomas, R., Li, J., Ladak, S., Barrow, D. and Smowton, P. 2018. In-situ fabricated 3D micro-lenses for photonic integrated circuits. Optics Express 26(10), pp. 13436-13442. (10.1364/OE.26.013436)
• Allford, C. P., Gillgrass, S., Al-Ghamdi, M. S., Krysa, A. B., Shutts, S. and Smowton, P. 2018. Barrier width effects in InAsP/AlGaInP quantum dot lasers. Presented at: UK Semiconductor Conference 2018 (UKSC 2018), Sheffield, UK, 4-5 July 2018.

2017

• Thomas, R., Harrison, A., Barrow, D. and Smowton, P. M. 2017. Photonic integration platform with pump free microfluidics. Optics Express 25(20), pp. 23634-23644. (10.1364/OE.25.023634)
• Gillgrass, S., Thomas, R. and Smowton, P. M. 2017. Novel coupled-cavity sensing mechanism for on-chip detection of microparticles (Conference Presentation). Presented at: SPIE OPTO 2017, San Francisco, CA, USA, 28 Jan - 2 Feb 2017 Presented at Belyanin, A. A. and Smowton, P. eds.Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI, Vol. 10123. Society of Photo-Optical Instrumentation Engineers (SPIE), (10.1117/12.2253613)

2016

• Smowton, P. M. et al. 2016. Quantum dot lasers for integrated photonics. Presented at: 2016 International Semiconductor Laser Conference (ISLC), Kobe, Japan, 12-15 September 20162016 International Semiconductor Laser Conference (ISLC). IEEE
• Krysa, A. B., Roberts, J. S., Devenson, J., Beanland, R., Karomi, I., Shutts, S. and Smowton, P. M. 2016. InAsP/AlGaInP/GaAs QD laser operating at ~770 nm. Journal of Physics: Conference Series 740(1), article number: 12008. (10.1088/1742-6596/740/1/012008)
• Chen, S. et al. 2016. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10, pp. 307-311. (10.1038/nphoton.2016.21)
• Thomas, R., Smowton, P. M., Briglin, D. and Krysa, A. B. 2016. Mechanism for enhanced wavelength tuning in gain-levered InP quantum dot lasers. IET Optoelectronics 10(2), pp. 66-69. (10.1049/iet-opt.2015.0062)
• Orchard, J. R. et al. 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express 24(6), pp. 6196-6202. (10.1364/OE.24.006196)

2015

• Sobiesierski, A., Thomas, R., Buckle, P. D., Barrow, D. and Smowton, P. M. 2015. A two-stage surface treatment for the long-term stability of hydrophilic SU-8. Surface and Interface Analysis 47(13), pp. 1174-1179. (10.1002/sia.5870)
• Thomas, R., Holton, M., Sobiesierski, A., Gillgrass, S., Summers, H. D., Barrow, D. and Smowton, P. M. 2015. Integrated III-V semiconductor flow cytometer with capillary fill micro-fluidics. Presented at: 2015 IEEE Photonics Conference (IPC), Reston, VA, USA, 4 - 8 October 2015IEEE Xplore. IEEE pp. 7-8., (10.1109/IPCon.2015.7323580)
• Kasim, M., Elliott, S., Krysa, A. B. and Smowton, P. M. 2015. Reducing thermal carrier spreading in InP quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 21(6), article number: 1900306. (10.1109/JSTQE.2015.2403716)
• Finch, P., Hutchings, M. D., Blood, P., Sobiesierski, A., Smowton, P. M. and O'Driscoll, I. D. 2015. Improving the optical bandwidth of passively mode-locked InAs quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 21(6), article number: 1900507. (10.1109/JSTQE.2015.2416675)
• Karomi, I., Smowton, P. M., Shutts, S., Krysa, A. B. and Beanland, R. 2015. InAsP quantum dot lasers grown by MOVPE. Optics Express 23(21), pp. 27282-27291. (10.1364/OE.23.027282)
• Elliott, S. N. and Smowton, P. M. 2015. Manufacturing-tolerant compact red-emitting laser diode designs for next generation applications. IET Optoelectronics 9(2), pp. 75-81. (10.1049/iet-opt.2014.0093)
• Shutts, S., Elliott, S., Smowton, P. M. and Krysa, A. B. 2015. Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing. Semiconductor Science and Technology 30(4), article number: 44002. (10.1088/0268-1242/30/4/044002)
• Thomas, R., Smowton, P. M. and Blood, P. 2015. Radiative recombination rate measurement by the optically pumped variable stripe length method. Optics Express 23(3), pp. 3308-3315. (10.1364/OE.23.003308)
• Smowton, P. M., Elliott, S. N., Kasim, M. and Krysa, A. B. 2015. Effect of thermal carrier spreading on the temperature dependence of threshold current in InP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIV, San Francisco, CA, USA, 7 Feb 2015 Presented at Belyanin, A. A. and Smowton, P. M. eds.Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820F (March 10, 2015), Vol. 9382. The International Society for Optical Engineering pp. 93820F., (10.1117/12.2086985)

2014

• Chen, S. et al. 2014. InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate. ACS Photonics 1(7), pp. 638-642. (10.1021/ph500162a)
• Shutts, S., Smowton, P. M. and Krysa, A. B. 2014. Dual-wavelength InP quantum dot lasers. Applied Physics Letters 104(24), article number: 241106. (10.1063/1.4883857)
• Hutchings, M., O'Driscoll, I., Smowton, P. M. and Blood, P. 2014. Fermi-dirac and random carrier distributions in quantum dot lasers. Applied Physics Letters 104(3), article number: 31103. (10.1063/1.4862813)
• Elliott, S., Kasim, M., Smowton, P. M. and Krysa, A. B. 2014. Improved laser performance in NIR InP dot based structures with strained layers. Presented at: 2014 International Semiconductor Laser Conference (ISLC), Palma de Mallorca, Spain, 7-10 Sept 2014Proceedings of the 2014 International Semiconductor Laser Conference (ISLC). IEEE pp. 86-87., (10.1109/ISLC.2014.176)
• Belyanin, A. A., Blood, P., Finch, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M. and O'Driscoll, I. 2014. Femtosecond pulse generation from a two-section mode-locked quantum-dot laser using random population. Presented at: Novel In-Plane Semiconductor Lasers XIII, San Francisco, 3 February 2014 through 6 February 2014Proceedings of SPIE - The International Society for Optical Engineering, Vol. 9002. SPIE pp. 90020E., (10.1117/12.2039130)

2013

• Finch, P., Blood, P., Smowton, P. M., Sobiesierski, A., Gwilliam, R. M. and O'Driscoll, I. 2013. Femtosecond pulse generation in passively mode locked InAs quantum dot lasers. Applied Physics Letters 103(13), article number: 131109. (10.1063/1.4822433)
• Hopkinson, M., Martin, T. and Smowton, P. M. 2013. III-V semiconductor devices integrated with silicon [Preface]. Semiconductor Science and Technology 28(9), article number: 90301. (10.1088/0268-1242/28/9/090301)
• Shutts, S., Smowton, P. M. and Krysa, A. B. 2013. InP quantum dot lasers with temperature insensitive operating wavelength. Applied Physics Letters 103(6), article number: 61106. (10.1063/1.4817732)
• Al-Ghamdi, M. S., Smowton, P. M., Shutts, S., Blood, P., Beanland, R. and Krysa, A. B. 2013. Absorption, Gain, and Threshold in InP/AlGaInP Quantum Dot Laser Diodes. IEEE Journal of Quantum Electronics 49(4), pp. 389-394. (10.1109/JQE.2013.2245496)
• Elliott, S., Hempel, M., Shutts, S., Zeimer, U., Smowton, P. M. and Tomm, J. W. 2013. Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers. Presented at: Novel In-Plane Semiconductor Lasers XII, San Francisco, USA, 4-7 February 2013 Presented at Belyanin, A. A. and Smowton, P. eds.Novel In-Plane Semiconductor Lasers XII. Proceedings of SPIE Vol. 8640. Bellingham: SPIE pp. 86401H., (10.1117/12.2008319)

2012

• Elliott, S., Hempel, M., Zeimer, U., Smowton, P. M. and Tomm, J. W. 2012. Catastrophic optical bulk damage in InP 7xx emitting quantum dot diode lasers. Semiconductor Science and Technology 27(10), article number: 102001. (10.1088/0268-1242/27/10/102001)
• Elliott, S., Smowton, P. M., Krysa, A. B. and Beanland, R. 2012. The effect of strained confinement layers in InP self-assembled quantum dot material. Semiconductor Science and Technology 27(9), article number: 94008. (10.1088/0268-1242/27/9/094008)
• O'Driscoll, I., Blood, P., Smowton, P. M., Sobiesierski, A. and Gwilliam, R. 2012. Effect of proton bombardment on InAs dots and wetting layer in laser structures. Applied Physics Letters 100(26), article number: 261105. (10.1063/1.4730964)
• Elliott, S., Smowton, P. M. and Krysa, A. B. 2012. Strained confinement layers in InP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XI, San Francisco, CA, USA, 23-26 January 2012 Presented at Belyanin, A. A. and Smowton, P. M. eds.Novel In-Plane Semiconductor Lasers XI. Proceedings of the SPIE Vol. 8277. Bellingham, WA: SPIE, (10.1117/12.913613)
• Elliott, S. N., Smowton, P. M. and Krysa, A. B. 2012. 700nm InP quantum dot lasers with strained confinement layers. Presented at: 23rd IEEE International Semiconductor Laser Conference (ISLC), San Diego, CA, USA, 7-10 Oct 2012Proceedings of 23rd IEEE International Semiconductor Laser Conference (ISLC). IEEE pp. 62-63., (10.1109/ISLC.2012.6348335)

2011

• Hutchings, M., O'Driscoll, I., Smowton, P. M. and Blood, P. 2011. Temperature dependence of the gain peak in p-doped InAs quantum dot lasers. Applied Physics Letters 99(15), pp. 151118-151121. (10.1063/1.3652702)
• Smowton, P. M., Elliott, S., Shutts, S., Al-Ghamdi, M. and Krysa, A. 2011. Temperature-dependent threshold current in InP Quantum-Dot Lasers. IEEE Journal of Selected Topics in Quantum Electronics 17(5), pp. 1343-1348. (10.1109/JSTQE.2011.2115235)
• Al-Ghamdi, M., Smowton, P. M., Blood, P. and Krysa, A. 2011. Dot density effect by quantity of deposited material in InP/AlGaInP structures. IEEE Photonics Technology Letters 23(16), pp. 1169-1171. (10.1109/LPT.2011.2157910)
• Ferguson, J. et al. 2011. Optical gain in GaInNAs and GaInNAsSb quantum wells. IEEE Journal of Quantum Electronics 47(6), pp. 870-877. (10.1109/JQE.2011.2129492)
• Shutts, S., Edwards, G., Elliott, S., Smowton, P. M. and Krysa, A. B. 2011. Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011 Presented at Belyanin, A. and Smowton, P. M. eds.Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011, Vol. 7953. SPIE Proceedings Vol. 7953. Bellingham, WA: IEEE pp. 795308., (10.1117/12.876454)
• Sobiesierski, A., Naidu, D. and Smowton, P. M. 2011. The lateral ambipolar diffusion length in quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X, San Francisco, CA, USA, 25-28 January 2011 Presented at Belyanin, A. A. and Smowton, P. M. eds.Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011, Vol. 7953. Proceedings of SPIE Bellingham, WA: The International Society for Optical Engineering pp. 795306., (10.1117/12.874474)
• Sobiesierski, A. and Smowton, P. M. 2011. Quantum-dot lasers: physics and applications. In: Bhattacharya, P., Fornari, R. and Kamimura, H. eds. Comprehensive Semiconductor Science and Technology: Volume 6: Devices and Applications. Burlington, VT: Elsevier, pp. 353-384., (10.1016/B978-0-44-453153-7.00034-1)
• Smowton, P. M., Elliott, S. N., Shutts, S., Michell, G., Al-Ghamdi, S. M. and Krysa, A. B. 2011. Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers. Presented at: 2011 Conference on Lasers and Electro-Optics (CLEO), Baltimore Convention Center, Baltimore, MD, USA, 1-6 May 2011CLEO: Science and Innovations 2011. pp. CFL1., (10.1364/CLEO_SI.2011.CFL1)
• Smowton, P. M., Elliott, S. N. and Krysa, A. B. 2011. Quantum dot lasers - the role of the 2D states. Presented at: 2011 IEEE Photonics Conference (PHO), Arlington, VA, USA, 9-13 Oct 2011Proceeding of the 2011 IEEE Photonics Conference (PHO). IEEE pp. 107-108., (10.1109/PHO.2011.6110448)

2010

• Langbein, W. W., Cesari, V., Masia, F., Krysa, A., Borri, P. and Smowton, P. M. 2010. Ultrafast gain dynamics in InP quantum-dot optical amplifiers. Applied Physics Letters 97(21), article number: 211103. (10.1063/1.3518715)
• O'Driscoll, I., Hutchings, M., Smowton, P. M. and Blood, P. 2010. Many-body effects in InAs/GaAs quantum dot laser structures. Applied Physics Letters 97(14), article number: 141102. (10.1063/1.3496011)
• Elliott, S., Smowton, P. M., Ziegler, M., Tomm, J. and Zeimer, U. 2010. Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes. Journal of Applied Physics 107(12), article number: 123116. (10.1063/1.3437395)
• O'Driscoll, I., Blood, P. and Smowton, P. M. 2010. Random population of quantum dots in InAs–GaAs laser structures. IEEE Journal of Quantum Electronics 46(4), pp. 525-532. (10.1109/JQE.2009.2039198)
• Naidu, D., Smowton, P. and Summers, H. D. 2010. The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices. Journal of Applied Physics 108(4), pp. 43108. (10.1063/1.3471812)
• Ridha, P. et al. 2010. Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast. IEEE Journal of Quantum Electronics 46(2), pp. 197-204. (10.1109/JQE.2009.2030339)
• Smowton, P. M., Al-Ghamdi, M., Shutts, S., Edwards, G., Hutchings, M. and Krysa, A. 2010. Effect of growth temperature on InP QD lasers. IEEE Photonics Technology Letters 22(2), pp. 88-90. (10.1109/LPT.2009.2036245)
• O'Driscoll, I., Hutchings, M., Smowton, P. M. and Blood, P. 2010. Random population of InAs-GaAs quantum dots. Presented at: Novel in-plane semiconductor lasers IX, San Francisco, CA, USA, 25-28 January 2010 Presented at Belyanin, A. A. and Smowton, P. M. eds.Proceedings of Novel In-Plane Semiconductor Lasers IX, San Francisco, USA, 25-28 January 2010. Proceedings of SPIE Vol. 7616. Bellingham, WA: SPIE pp. 761605., (10.1117/12.845843)
• Michell, G. J., Smowton, P. M. and Summers, H. D. 2010. Manipulation of optical modes in quantum dot laser diodes by selective oxidation of high aluminum content AlGaAs layers. Presented at: Novel in-plane semiconductor lasers IX, San Francisco, CA, USA, 25-28 January 2010 Presented at Belyanin, A. A. and Smowton, P. M. eds.Proceedings of Novel In-Plane Semiconductor Lasers IX, San Francisco, USA, 28-28 January 2010. Proceedings of SPIE Vol. 7617. Bellingham, WA: SPIE pp. 76161T., (10.1117/12.846843)
• Smowton, P. M. and Blood, P. 2010. Quantum dot lasers: theory and experiment. In: Lee, E. et al. eds. VLSI Micro- and Nanophotonics: Science, Technology, and Applications. Boca Raton, FL: CRC Press, pp. 9.1-9.35.

2009

• Ferguson, J., Smowton, P. M., Blood, P., Bae, H., Sarmiento, T. and Harris, J. 2009. Nonradiative recombination in 1.56 μm GaInNAsSb/GaNAs quantum-well lasers. Applied Physics Letters 95(23), article number: 231104. (10.1063/1.3271182)
• Liu, H., Smowton, P., Summers, H., Edwards, G. and Drexler, W. 2009. Self-pulsing 1050 nm quantum dot edge emitting laser diodes. Applied Physics Letters 95(10), article number: 101111. (10.1063/1.3227654)
• AI Ghamdi, M., Smowton, P. M., Blood, P. and Krysa, A. 2009. Effect of temperature on threshold current density in InP/AlGaInP quantum dot laser structures. International Journal of Nano and Biomaterials 2(1/2/3/), pp. 147-154. (10.1504/IJNBM.2009.027708)
• O'Driscoll, I., Smowton, P. M. and Blood, P. 2009. Low-temperature nonthermal population of InAs-GaAs quantum dots. IEEE Journal of Quantum Electronics 45(4), pp. 380-387. (10.1109/JQE.2009.2013869)
• Liu, H., Smowton, P. M., Edwards, G., Drexler, W. and Summers, H. 2009. Self pulsing quantum dot lasers for optical coherence tomography. Presented at: Novel in-plane semiconductor lasers VIII, San Jose, CA, USA, 26-29 January 2009 Presented at Belyanin, A. A. and Smowton, P. M. eds.Proceedings of Novel In-Plane Semiconductor Lasers VIII, San Jose, USA, 26-29 January 2009, Vol. 7230. Proceedings of the SPIE Bellingham, WA: The International Society for Optical Engineering pp. 72300A., (10.1117/12.813504)
• Elliott, S., Smowton, P. M., Edwards, G., Berry, G. and Krysa, A. B. 2009. Higher power density limit at COMD in GaInP/AlGaInP in quantum dots than in wells. Presented at: Novel in-plane semiconductor lasers VIII, San Jose, CA, United States, 26-29 January 2009 Presented at Belyanin, A. A. and Smowton, P. M. eds.Proceedings of Novel In-Plane Semiconductor Lasers VIII, San Jose, USA, 26-29 January 2009, Vol. 7230. Proceedings of the SPIE Bellingham, WA: The International Society for Optical Engineering pp. 72300X., (10.1117/12.809341)
• Smowton, P. M. 2009. Editorial: Selected papers inspired by the Semiconductor and Integrated Optoelectronics (SIOE 2009) Conference. IET Optoelectronics 3(6), pp. 241. (10.1049/iet-opt.2009.9052)
• Tansu, N., Schubert, E. F., Kuo, H. and Smowton, P. M. 2009. Introduction to the issue on solid-state lighting [Editorial]. IEEE Journal of Selected Topics in Quantum Electronics 15(4), pp. 1025-1027. (10.1109/JSTQE.2009.2021694)

2008

• Smowton, P. M. 2008. Editorial: Selected papers inspired by the Semiconductor and Integrated Optoelectronics (SIOE 2008) Conference. IET Optoelectronics 2(6), pp. 209. (10.1049/iet-opt:20089030)
• Smowton, P. M., George, A. A., Sandall, I. C., Hopkinson, M. and Liu, H. 2008. Origin of temperature-dependent threshold current in p-doped and undoped in(Ga)As quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 14(4), pp. 1162-1170. (10.1109/JSTQE.2008.920040)
• Smowton, P. M., Al-Ghamdi, M., Elliott, S. N., Edwards, G., Blood, P. and Krysa, A. B. 2008. InP/AlGaInP short wavelength quantum dot lasers. Presented at: IEEE 21st International Semiconductor Laser Conference, 2008. ISLC 2008., Sorrento, ItalyProceedings of IEEE 21st International Semiconductor Laser Conference, 2008. ISLC 2008.. IEEE pp. 31-32., (10.1109/ISLC.2008.4635994)
• Tsvid, G. et al. 2008. Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers. IEEE Journal of Quantum Electronics 44(8), pp. 732-739. (10.1109/JQE.2008.924242)
• Edwards, G., Smowton, P. M. and Westwood, D. I. 2008. Dry etching of anisotropic microstructures for distributed bragg reflectors in AlGaInP/GaAs laser structures. IEEE Journal of Selected Topics in Quantum Electronics 14(4), pp. 1098-1103. (10.1109/JSTQE.2008.918260)
• Elliott, S. N., Smowton, P. M., Edwards, G. T., Krysa, A. B. and Berry, G. 2008. Higher catastrophic optical mirror damage power density level at facet from quantum dot material. Presented at: IEEE 21st International Semiconductor Laser Conference, 2008. ISLC 2008, Sorrento, Italy, 14-18 Sept 2008Proceedings of the IEEE 21st International Semiconductor Laser Conference, 2008. ISLC 2008. IEEE pp. 137-138., (10.1109/ISLC.2008.4636047)

2007

• Mexis, M., Blood, P. and Smowton, P. M. 2007. Polarization response of quantum-confined structures using edge-photovoltage spectroscopy. Semiconductor Science and Technology 22(12), pp. 1298-1301. (10.1088/0268-1242/22/12/010)
• Smowton, P. M. 2007. Editorial: Semiconductor and Integrated Optoelectronics (SIOE). IET Optoelectronics 1(6), pp. 241. (10.1049/iet-opt:20079032)
• Ridha, P., Li, L., Fiore, A., Patriarche, G., Mexis, M. and Smowton, P. M. 2007. Polarization dependence study of electroluminescence and absorption from InAs / GaAs columnar quantum dots. Applied Physics Letters 91(19), article number: 191123. (10.1063/1.2811720)
• Naidu, D. et al. 2007. Role of device structure on the performance of quantum dot lasers. Presented at: LEOS 2007: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007, 21-25 October 2007LEOS 2007. The 20th Annual Meeting of the IEEE. IEEE pp. 435-436., (10.1109/LEOS.2007.4382465)
• Edwards, G., Sobiesierski, A., Westwood, D. and Smowton, P. 2007. Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl-2/Ar inductively coupled plasma. Semiconductor Science and Technology 22(9), pp. 1010-1015. (10.1088/0268-1242/22/9/006)
• Lim, J. et al. 2007. Thermal performance investigation of DQW GaInNAs laser diodes. Presented at: International Conference on Numerical Simulation of Optoelectronic Devices 2007 (NUSOD 2007), Newark, DE, USA, 24-28 September 2007Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, Newark, USA, 24-28 September 2007. IEEE pp. 19-20., (10.1109/NUSOD.2007.4349003)
• Smowton, P. M., Sandall, I. C., Mowbray, D. J., Liu, H. Y. and Hopkinson, M. 2007. Temperature-dependent gain and threshold in P-doped quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 13(5), pp. 1261-1266. (10.1109/JSTQE.2007.903375)
• George, A. A., Smowton, P. M., Mi, Z. and Bhattacharya, P. 2007. Long wavelength quantum-dot lasers selectively populated using tunnel injection. Semiconductor Science and Technology 22(5), pp. 557-560. (10.1088/0268-1242/22/5/018)
• Smowton, P. M., Sandall, I. C., Mowbray, D. J., Liu, H. and Hopkinson, M. 2007. Maximising the gain: optimising the carrier distribution in InGaAs quantum dot lasers. Presented at: Physics and Simulation of Optoelectronic Devices XV, San Jose, CA, USA, 20 January 2007 Presented at Osinski, M., Henneberger, F. and Arakawa, Y. eds.Physics and Simulation of Optoelectronic Devices XV. Proceedings of SPIE Vol. 6468. Bellingham, WA: SPIE pp. 646817., (10.1117/12.702733)
• Smowton, P. M., Sandall, I. C., Hopkinson, M. and Liu, H. 2007. Gain in p-doped quantum dot lasers. Journal of Applied Physics 101(1), pp. 01310701-01310707. (10.1063/1.2405738)
• Lim, J. J. et al. 2007. Simulation of double quantum well GaInNAs laser diodes. IET Optoelectronics 1(6), pp. 260-265. (10.1049/iet-opt:20070036)
• Sandall, I. C., Smowton, P. M., Liu, H. and Hopkinson, M. 2007. Nonradiative recombination in multiple layer in(Ga)As quantum-dot lasers. IEEE Journal of Quantum Electronics 43(8), pp. 698-703. (10.1109/JQE.2007.901583)
• Thomson, J. D., Smowton, P. M., Blood, P. and Klem, J. F. 2007. Optical gain and spontaneous emission in GaAsSb–InGaAs type-II “W” laser structures. IEEE Journal of Quantum Electronics 43(7), pp. 607-613. (10.1109/JQE.2007.899499)
• Krysa, A. B., Liew, S. L., Lin, J. C., Roberts, J. S., Lutti, J., Lewis, G. M. and Smowton, P. M. 2007. Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm. Journal of Crystal Growth 298, pp. 663-666. (10.1016/j.jcrysgro.2006.10.087)

2006

• Smowton, P. M. 2006. Editorial: Semiconductor and Integrated Optoelectronics (SIOE) Conference 2006. IEE Proceedings Optoelectronics 153(6), pp. 275. (10.1049/ip-opt:20069027)
• Sandall, I. C., Smowton, P. M., Thomson, J. D., Baddock, T., Mowbray, D. J., Liu, H. and Hopkinson, M. 2006. Temperature dependence of threshold current in p-doped quantum dot lasers. Applied Physics Letters 89(15), pp. 15111801-15111803. (10.1063/1.2361167)
• Smowton, P. M. et al. 2006. Characterisation of modulation doped quantum dot lasers. Presented at: Novel In-plane Semiconductor Lasers V, San Jose, CA, USA, 21-26 January 2006 Presented at Mermelstein, C. and Bour, D. P. eds.Novel In-Plane Semiconductor Lasers V. Proceedings of SPIE Vol. 6133. Bellingham, WA: SPIE pp. 61330T., (10.1117/12.650682)
• Thomson, J. D. et al. 2006. The influence of acceptor anneal temperature on the performance of InGaN/GaN quantum well light-emitting diodes. Journal of Applied Physics 99(2), article number: 24507. (10.1063/1.2165405)
• Brown, M. R. et al. 2006. Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes. Journal of Applied Physics 100(8) (10.1063/1.2362906)
• Smowton, P. M. et al. 2006. Characterisation of modulation doped quantum dot lasers. Presented at: Novel In-plane Semiconductor Lasers V, San Jose, CA, USA, 23-26 January 2006 Presented at Mermelstein, C. and Bour, D. P. eds.Novel In-plane Semiconductor Lasers V. Proceedings of SPIE Vol. 6133. Bellingham, WA: SPIE Press pp. T1330-T1330.
• Elliott, S., Berry, G. and Smowton, P. M. 2006. Optimisation of high power AlGaInP laser diodes for optical storage applications. IEE Proceedings Optoelectronics 153(6), pp. 321-325. (10.1049/ip-opt:20060050)
• Sandall, I. C., Walker, C. L., Hopkinson, M., Smowton, P. M., Liu, H. Y. and Mowbray, D. J. 2006. Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures. IEE Proceedings Optoelectronics 153(6), pp. 316-320. (10.1049/ip-opt:20060042)
• Brown, I. H. et al. 2006. Time evolution of the screening of piezoelectric fields in InGaN quantum wells. IEEE Journal of Quantum Electronics 42(12), pp. 1202-1208. (10.1109/JQE.2006.883472)
• Walker, C. L., Sandall, I. C., Smowton, P. M., Mowbray, D. J., Liu, H. Y., Liew, S. L. and Hopkinson, M. 2006. Improved performance of 1.3-/spl mu/m In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers. IEEE Photonics Technology Letters 18(14), pp. 1557-1559. (10.1109/LPT.2006.879592)
• Sandall, I. C., Smowton, P. M., Walker, C. L., Liu, H. Y., Hopkinson, M. and Mowbray, D. J. 2006. Recombination mechanisms in 1.3-μm InAs quantum-dot lasers. IEEE Photonics Technology Letters 18(8), pp. 965-967. (10.1109/LPT.2006.873560)
• Edwards, G. T., Westwood, D. I. and Smowton, P. M. 2006. Selective etching of AlGaInP laser structures in a BCl3/Cl2 inductively coupled plasma. Semiconductor Science and Technology 21(4), article number: 513. (10.1088/0268-1242/21/4/017)
• Sandall, I. C., Smowton, P. M., Walker, C. L., Badcock, T., Mowbray, D. J., Liu, H. Y. and Hopkinson, M. 2006. The effect of p doping in InAs quantum dot lasers. Applied Physics Letters 88(11), article number: 111113. (10.1063/1.2186078)

2005

• Smowton, P. M., Lutti, J., Lewis, G. M., Krysa, A. B., Roberts, J. S. and Houston, P. A. 2005. InP-GaInP quantum-dot lasers emitting between 690-750 nm. IEEE Journal of Selected Topics in Quantum Electronics 11(5), pp. 1035-1040. (10.1109/JSTQE.2005.853838)
• Brown, I. H. et al. 2005. Determination of the Piezoelectric Field in InGaN Quantum Wells. Applied Physics Letters 86, article number: 131108. (10.1063/1.1896446)
• Matthews, D. R., Summers, H. D., Smowton, P. M., Blood, P., Rees, P. and Hopkinson, M. 2005. Dynamics of the wetting-layer-quantum-dot interaction in InGaAs self-assembled systems. IEEE Journal of Quantum Electronics 41(3), pp. 344-350. (10.1109/JQE.2004.841275)
• Sobiesierski, A. et al. 2005. AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier. Applied Physics Letters 86(2) (10.1063/1.1849847)
• Lutti, J. et al. 2005. Gain saturation in InP/GaInP quantum-dot lasers. Applied Physics Letters 86(1), article number: 11111. (10.1063/1.1844600)
• Thomson, J. D. et al. 2005. The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes. Presented at: Physics and simulation of optoelectronic devices XIII, San Jose, USA, 24-27 January 2005 Presented at Osinski, M., Henneberger, F. and Amano, H. eds.Physics and Simulation of Optoelectronic Devices XIII. Proceedings of SPIE Vol. 5722. Bellingham: SPIE pp. 425-430., (10.1117/12.591897)
• Thomson, J. D., Brown, I. H., Smowton, P. M., Blood, P., Chow, W. W., Fox, A. M. and Izquierdo, S. M. O. 2005. Time evolution of piezoelectric field screening in InGaN quantum wells. Presented at: Physics and simulation of optoelectronic devices XIII, San Jose, USA, 24-27 January 2005 Presented at Osinski, M., Henneberger, F. and Amano, H. eds.Physics and Simulation of Optoelectronic Devices XIII. Proceedings of SPIE Vol. 5722. Bellingham: SPIE pp. 392-399., (10.1117/12.591898)
• Walker, C. L., Sandall, I. C., Smowton, P. M., Sellers, I. R., Mowbray, D. J., Liu, H. Y. and Hopkinson, M. 2005. The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers. IEEE Photonics Technology Letters 17(10), pp. 2011-2013. (10.1109/LPT.2005.854393)
• Mermelstein, C. et al. 2005. Growth and characterization of multiple layer quantum dot lasers. Presented at: Integrated Optoelectronic Devices 2005, San Jose, California, USA, 22-27 January, 2005 Presented at Mermelstein, C. and Bour, D. P. eds.Novel In-Plane Semiconductor Lasers IV, Proceedings of the Conference held at San Jose, CA, 22 January 2005, Vol. 5738. SPIE Proceedings Bellingham, WA: SPIE pp. 332., (10.1117/12.593278)
• Lutti, J. et al. 2005. 740 nm InP/GaInP quantum-dot laser with 190 A cm/sup -2/ room temperature threshold current density. Electronics letters 41(5), pp. 247-248. (10.1049/el:20057201)
• Palmer, D. J., Smowton, P. M., Blood, P., Yeh, J., Mawst, L. J. and Tansu, N. 2005. Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers. Applied Physics Letters 86(7), article number: 71121. (10.1063/1.1868070)

2004

• Osborne, S. W. et al. 2004. State filling in InAs quantum-dot laser structures. IEEE journal of quantum electronics 40(12), pp. 1639-1645. (10.1109/JQE.2004.837331)
• Lewis, G. M., Lutti, J., Smowton, P. M., Blood, P., Krysa, A. B. and Liew, S. L. 2004. Optical properties of InP/GaInP quantum-dot laser structures. Applied Physics Letters 85(11), pp. 1904-1906. (10.1063/1.1794379)
• Teng, K. S., Brown, M. R., Wilks, S., Sobiesierski, A., Smowton, P. and Blood, P. 2004. Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy. Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures 22(4), pp. 2014-2017. (10.1116/1.1768187)
• Osborne, S. W. et al. 2004. Energy distributions of carriers in quantum dot laser structures. Presented at: Physics and Simulation of Optoelectronic Devices XI, San Jose, CA, USA, 26 January 2003 Presented at Osinski, M., Amano, H. and Henneberger, F. eds.Physics and simulation of optoelectronic devices XII. Proceedings of SPIE Vol. 5349. Bellingham, WA: SPIE pp. 63., (10.1117/12.540314)
• Matthews, D. R., Edwards, G. T., Summers, H. D. and Smowton, P. M. 2004. Saturable absorber characteristics in quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers III, San Jose, CA, USA, 26 January 2004 Presented at Gmachl, C. F. and Bour, D. P. eds.Novel in-plane semiconductor lasers III. Proceedings of SPIE Vol. 5365. Bellingham, WA: SPIE pp. 96., (10.1117/12.528789)
• Summers, H. D., Matthews, D. R., Smowton, P. M., Rees, P. and Hopkinson, M. 2004. Laser dynamics in self-pulsating quantum dot systems. Journal of Applied Physics 95(3), article number: 1036. (10.1063/1.1636828)
• Osborne, S. W., Blood, P., Smowton, P. M., Xin, Y. C., Stintz, A., Huffaker, D. and Lester, L. F. 2004. Optical absorption cross section of quantum dots. Journal of Physics: Condensed Matter 16(35), article number: S3749. (10.1088/0953-8984/16/35/016)
• Brown, M. R., Teng, K. S., Kestle, A., Smowton, P. M., Blood, P., Mawby, P. A. and Wilks, S. P. 2004. Study of dual-valley transport across a multiquantum barrier to enhance carrier confinement. Applied Surface Science 234(1-4), pp. 434-438. (10.1016/j.apsusc.2004.05.074)
• Tanguy, Y., Muszalski, J., Houlihan, J., Huyet, G., Pearce, E. J., Smowton, P. M. and Hopkinson, M. 2004. Mode formation in broad area quantum dot lasers at 1060 nm. Optics Communications 235(4-6), pp. 387-393. (10.1016/j.optcom.2004.02.048)
• Gmachl, C. F. et al. 2004. Carrier distribution, spontaneous emission, and gain in self-assembled quantum dot lasers. Presented at: Integrated Optoelectronic Devices 2004, San Jose, California, USA Presented at Gmachl, C. F. and Bour, D. P. eds.Novel In-Plane Semiconductor Lasers III, Proceedings of the Conference held at San Jose, CA, 26 January 2004, Vol. 5365. SPIE Proceedings Bellingham, WA: SPIE pp. 86., (10.1117/12.530429)
• Lenstra, D. et al. 2004. Mode structure of quantum dot semiconductor lasers. Presented at: SPIE Photonics Europe 2004, Strasbourg, France, 26-30 April 2004 Presented at Lenstra, D. et al. eds.Semiconductor Lasers and Laser Dynamics, Proceedings of the Conference held at Strasbourg, France, 26 April 2004, Vol. 5452. SPIE Proceedings Bellingham, WA: SPIE pp. 518., (10.1117/12.545473)

2003

• Blood, P., Lewis, G. M., Smowton, P. M., Summers, H. D., Thomson, J. D. and Lutti, J. 2003. Characterization of semiconductor laser gain media by the segmented contact method. IEEE Journal of Selected Topics in Quantum Electronics 9(5), pp. 1275-1282. (10.1109/JSTQE.2003.819472)
• Smowton, P., Lewis, G. M., Sobiesierski, A., Blood, P., Lutti, J. and Osborne, S. 2003. Non-uniform carrier distribution in multi-quantum-well lasers. Applied Physics Letters 83(3), pp. 419-421. (10.1063/1.1593818)
• Sobiesierski, A., Lewis, G. M., Smowton, P., Blood, P., Jones, G. and Bland, S. W. 2003. Coupled multi-quantum well 650-nm emitting GaInP laser diodes. Presented at: Novel In-Plane Semiconductor Lasers II, San Jose, CA, USA, 27-29 January, 2003Novel In-Plane Semiconductor Lasers II. SPIE Proceeedings Vol. 4995. SPIE pp. 152-159., (10.1117/12.475785)
• Schneider, H. C., Chow, W. W., Smowton, P. M., Pearce, E. J. and Koch, S. W. 2003. Many-body effects in quantum dot lasers. Presented at: Physics and Simulation of Optoelectronic Devices XI, San Jose, CA, USA, 25 January 2003 Presented at Osinski, M., Amano, H. and Blood, P. eds.Physics and simulation of optoelectronic devices XI. Proceedings of SPIE Vol. 4986. Bellingham, WA: SPIE pp. 29., (10.1117/12.482334)
• Pope, I., Smowton, P. M., Blood, P., Thomson, J. D., Kappers, M. J. and Humphreys, C. J. 2003. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. Applied Physics Letters 82(17), pp. 2755-2757. (10.1063/1.1570515)
• Lewis, G. M., Smowton, P. M., Blood, P. and Chow, W. W. 2003. Effect of tensile strain/well-width combination on the measured gain-radiative current characteristics of 635 nm laser diodes. Applied Physics Letters 82(10), pp. 1524-1526. (10.1063/1.1559658)
• Smowton, P. M., Lewis, G. M., Blood, P. and Chow, W. W. 2003. Optimization of 635-nm tensile strained GaInP laser diodes. IEEE Journal of Selected Topics in Quantum Electronics 9(5), pp. 1246-1251. (10.1109/JSTQE.2003.819488)

2002

• Matthews, D. R., Summers, H. D., Smowton, P. M. and Hopkinson, M. 2002. Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers. Applied Physics Letters 81(26), pp. 4904-4906. (10.1063/1.1532549)
• Smowton, P. M., Pearce, E. J., Schneider, H. C., Chow, W. W. and Hopkinson, M. 2002. Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers. Applied Physics Letters 81(17), pp. 3251-3253. (10.1063/1.1516236)
• Groom, K. M., Tartakovskii, A. I., Mowbray, D. J., Skolnick, M. S., Smowton, P. M., Hopkinson, M. and Hill, G. 2002. Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement. Applied Physics Letters 81(1), pp. 1-3. (10.1063/1.1489702)
• Lewis, G. M., Smowton, P. M., Blood, P., Jones, G. and Bland, S. 2002. Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes. Applied Physics Letters 80(19), pp. 3488-3490. (10.1063/1.1476396)
• Teng, K. S. et al. 2002. An investigation of multi-quantum barriers for band offset engineering in AlGaInP/GaInP lasers. Applied Surface Science 190(1-4), pp. 284-287. (10.1016/S0169-4332(01)00869-8)
• Smowton, P. M. et al. 2002. The effect of cladding layer thickness on large optical cavity 650-nm lasers. IEEE Journal of Quantum Electronics 38(3), pp. 285-290. (10.1109/3.985570)
• Lewis, G. M., Smowton, P. M., Thomson, J. D., Summers, H. D. and Blood, P. 2002. Measurement of true spontaneous emission spectra from the facet of diode laser structures. Applied Physics Letters 80(1), pp. 1-3. (10.1063/1.1428774)
• Lewis, G. M., Thomson, J. D., Smowton, P. M., Hulyer, P. J. and Blood, P. 2002. Gain characteristics of GaInP quantum well laser structures. Presented at: Novel In-Plane Semiconductor Lasers, San Jose, CA, USA, 21-23 January 2002 Presented at Meyer, J. R. and Gmachl, C. F. eds.Novel In-Plane Semiconductor Lasers. Proceedings of SPIE Vol. 4651. Bellingham, WA: SPIE, (10.1117/12.467933)

2001

• Thomson, J. D., Summers, H. D., Smowton, P. M., Herrmann, E., Blood, P. and Hopkinson, M. 2001. Temperature dependence of the lasing wavelength of InGaAs quantum dot lasers. Journal of Applied Physics 90(9), pp. 4859-4861. (10.1063/1.1402666)
• Smowton, P. M. et al. 2001. Optical loss in large optical cavity 650 nm lasers [Letter]. Semiconductor Science and Technology 16(10), pp. L72-L75. (10.1088/0268-1242/16/10/104)
• Herrmann, E., Smowton, P. M., Ning, Y., Groom, K. M., Mowbray, D. J. and Hopkinson, M. 2001. Performance of lasers containing three, five and seven layers of quantum dots. IEE Proceedings Optoelectronics 148(5-6), pp. 238-242. (10.1049/ip-opt:20010745)
• Smowton, P. M. 2001. Editorial Semiconductor Optoelectronics. IEE Proceedings Optoelectronics 148(5-6), pp. 219. (10.1049/ip-opt:20010858)
• Smowton, P. M., Herrmann, E., Ning, Y., Summers, H. D., Blood, P. and Hopkinson, M. 2001. Optical mode loss and gain of multiple-layer quantum-dot lasers. Applied Physics Letters 78(18), pp. 2629-2631. (10.1063/1.1366652)
• Ivanov, A. L., Summers, H. D., Smowton, P. M. and Blood, P. 2001. Long-range interface-photon-mediated interactions between self-assembled quantum dots. Physica Status Solidi B Basic Research 224(3), pp. 781-786. (10.1002/(SICI)1521-3951(200104)224:3<781::AID-PSSB781>3.0.CO;2-9)
• Summers, H. D., Thomson, J. D., Smowton, P. M., Blood, P. and Hopkinson, M. 2001. Thermodynamic balance in quantum dot lasers. Semiconductor Science and Technology 16(3), pp. 140-143. (10.1088/0268-1242/16/3/303)
• Groom, K. M. et al. 2001. Optical spectroscopic study of carrier processes in self-assembled In(Ga)As-Ga(Al)As quantum dot lasers. Physica Status Solidi B Basic Research 224(1), pp. 123-127. (10.1002/1521-3951(200103)224:1<123::AID-PSSB123>3.0.CO;2-F)
• Yin, M., Smowton, P. M., Blood, P., McAuley, B. and Button, C. C. 2001. S-shaped negative differential resistance in 650 nm quantum well laser diodes. Solid-State Electronics 45(3), pp. 447-452. (10.1016/S0038-1101(01)00018-1)
• Smowton, P. M., Chow, W., Lewis, G. M., Blood, P., Summers, H. D. and Thomson, J. D. 2001. Comparison of experimental and theoretical optical properties of GaInP lasers. Presented at: Physics and Simulation of Optoelectronic Devices IX, San Jose, CA, USA, 22-26 January 2001 Presented at Arakawa, Y., Blood, P. and Osinski, M. eds.Physics and Simulation of Optoelectronic Devices IX. Proceedings of SPIE Vol. 4283. Bellingham, WA: SPIE pp. 203-214., (10.1117/12.432567)
• Lewis, G. M., Smowton, P. M., Thomson, J. D., Summers, H. D. and Blood, P. 2001. Measurement of spontaneous emission spectra of diode laser structures. Presented at: LEOS 2001: The 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2001, San Diego, CA, USA, 12-13 November 2001LEOS 2001: The 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2001. Los Alamitos, CA: IEEE pp. 655-656., (10.1109/LEOS.2001.968984)
• Summers, H. D., Smowton, P., Blood, P., Dineen, M., Perks, R. M., Bour, D. P. and Kneissel, M. 2001. Spatially and spectrally resolved measurement of optical loss in InGaN laser structures. Journal of Crystal Growth 230(3-4), pp. 517-521. (10.1016/S0022-0248(01)01284-2)
• Ning, Y., Gao, X., Wang, L., Smowton, P. M. and Blood, P. 2001. Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser. Presented at: 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001, 22-25 October 2001Proceedings: 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001, Vol. 2. Los Alamitos, CA: IEEE pp. 1249-1251., (10.1109/ICSICT.2001.982126)
• Ning, Y. Q., Gao, X., Wang, L. J., Smowton, P. M. and Blood, P. 2001. Farfield characteristics of InGaAs/GaAs quantum dots laser. Presented at: Semiconductor Optoelectronic Device Manufacturing and Applications, Nanjing, China, 7 November 2001 Presented at Chen, D. et al. eds.Semiconductor Optoelectronic Device Manufacturing and Applications, Nanjing, China, 7 November 2001. Proceedings of SPIE Vol. 4602. Bellingham, WA: SPIE pp. 106-109., (10.1117/12.445712)

2000

• Herrmann, E., Smowton, P. M., Summers, H. D., Thomson, J. D. and Hopkinson, M. 2000. Modal gain and internal optical mode loss of a quantum dot laser. Applied Physics Letters 77(2), pp. 163-165. (10.1063/1.126911)
• Wood, S. A., Molloy, C. H., Smowton, P. M., Blood, P. and Button, C. C. 2000. Minority carrier effects in GaInP laser diodes. IEEE Journal of Quantum Electronics 36(6), pp. 742-750. (10.1109/3.845732)
• Smowton, P. M., Blood, P. and Chow, W. W. 2000. Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers. Applied Physics Letters 76(12), pp. 1522-1524. (10.1063/1.126083)
• Patane, A. et al. 2000. Experimental studies of the multimode spectral emission in quantum dot lasers. Journal of Applied Physics 87(4), pp. 1943-1946. (10.1063/1.372117)
• Thomson, J. D., Summers, H. D., Hulyer, P. J., Smowton, P. M. and Blood, P. 2000. Measurement of optical gain and Fermi level separation in semiconductor structures. Presented at: Physics and Simulation of Optoelectronic Devices VIII, San Jose, CA, USA, 24-28 January 2000 Presented at Binder, R. H., Blood, P. and Osinski, M. eds.Physics and Simulation of Optoelectronic Devices VIII. Proceedings of SPIE Vol. 3944. Bellingham, WA: SPIE pp. 201-208., (10.1117/12.391422)
• Thomson, J. D., Smowton, P. M., Summers, H. D., Herrmann, E., Blood, P. and Hopkinson, M. 2000. Intrinsic performance of InGaAs/GaAs quantum dot lasers. Presented at: LEOS 2000: 13th Annual Meeting: IEEE Lasers and Electro-Optics Society: 2000 Annual Meeting, Rio Grande, Puerto Rico, 15-16 November 2000LEOS 2000: 13th Annual Meeting IEEE Lasers and Electro-Optics Society, Vol. 2. Los Alamitos, CA: IEEE pp. 308-309., (10.1109/LEOS.2000.890801)
• Thomson, J. D., Summers, H. D., Smowton, P. M., Herrmann, E., Blood, P. and Hopkinson, M. 2000. Temperature dependence of the wavelength of quantum dot lasers. Presented at: 2000 IEEE 17th International Semiconductor Laser Conference, Monterey, CA, USA, 25 - 28 September 20002000 IEEE 17th International Semiconductor Laser Conference, 2000: Conference Digest. Los Alamitos, CA: IEEE pp. 135-136., (10.1109/ISLC.2000.882324)
• Smowton, P. M., Lewis, G. M., Blood, P., Chow, W. W. and Koch, S. W. 2000. Extraction of non-radiative and carrier leakage losses in GaInP lasers through comparison of experimental and theoretical optical properties. Presented at: 2000 IEEE 17th International Semiconductor Laser Conference, Monterey, CA, USA, 25 - 28 September 20002000 IEEE 17th International Semiconductor Laser Conference, 2000: Conference Digest. Los Alamitos, CA: IEEE pp. 121-122., (10.1109/ISLC.2000.882318)
• Patane, A. et al. 2000. (InGa)As/(AlGa)As self-assembled quantum dots: Optical properties and laser applications. Presented at: 26th International Symposium on Compound Semiconductors, Berlin, Germany, 23-26th August 1999 Presented at Ploog, K. and Weimann, G. eds.Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany. Institute of Physics Conference Series Vol. 166. London: Taylor & Francis pp. 247-250.

1999

• Smowton, P. M. et al. 1999. Spectral analysis of InGaAs/GaAs quantum-dot lasers. Applied Physics Letters 75(15), pp. 2169-2171. (10.1063/1.124954)
• Thomson, J. D., Summers, H. D., Hulyer, P. J., Smowton, P. M. and Blood, P. 1999. Determination of single-pass optical gain and internal loss using a multisection device. Applied Physics Letters 75(17), pp. 2527-2529. (10.1063/1.125066)
• Wood, S. A., Molloy, C. H., Smowton, P. M., Blood, P., Somerford, D. J. and Button, C. C. 1999. Electron transport in AlGaInP quantum well lasers. Applied Physics Letters 75(12), pp. 1748-1750. (10.1063/1.124807)
• Smowton, P. M., Lewis, G. M., Yin, M., Summers, H. D., Berry, G. and Button, C. C. 1999. 650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers. IEEE Journal of Selected Topics in Quantum Electronics 5(3), pp. 735-739. (10.1109/2944.788444)
• Summers, H. D., Molloy, C. H., Smowton, P. M., Rees, P., Pierce, I. and Jones, D. R. 1999. Experimental analysis of self-pulsation in 650-nm-wavelength AlGaInP laser diodes with epitaxial absorbing layers. IEEE Journal of Selected Topics in Quantum Electronics 5(3), pp. 745-749. (10.1109/2944.788446)
• Wood, S. A., Smowton, P. M., Molloy, C. H., Blood, P., Somerford, D. J. and Button, C. C. 1999. Direct monitoring of thermally activated leakage current in AlGaInP laser diodes. Applied Physics Letters 74(17), pp. 2540-2542. (10.1063/1.123891)
• Blood, P., Wood, S., Smowton, P. M. and Molloy, C. 1999. Carrier transport in AlGaInP laser structures. Presented at: Physics and Simulation of Optoelectronic Devices VII, San Jose, CA, USA, 25-29 January 1999 Presented at Blood, P., Ishibashi, A. and Osinski, M. eds.Physics and Simulation of Optoelectronic Devices VII. Proceedings of SPIE Vol. 3625. Bellingham, WA: SPIE pp. 476-484., (10.1117/12.356906)

1998

• Mogensen, P. C., Hall, S. A., Smowton, P. M., Bangert, U., Blood, P. and Dawson, P. 1998. The effect of high compressive strain on the operation of AlGaInP quantum-well lasers. IEEE Journal of Quantum Electronics 34(9), pp. 1652-1659. (10.1109/3.709581)
• Mogensen, P. C., Smowton, P. M., Blood, P., Hall, S. A., Bangert, U. and Dawson, O. 1998. The impact of structural non-uniformity on the operation of AlGaInP lasers at high compressive strain. Presented at: Physics and Simulation of Optoelectronic Devices VI, San Jose, CA, USA, 26-30 January 1998 Presented at Osinski, M., Blood, P. and Ishibashi, A. eds.Physics and Simulation of Optoelectronic Devices VI. Proceedings of SPIE Vol. 3283. Bellingham, WA: SPIE pp. 432-443., (10.1117/12.316694)
• Blood, P., Foulger, D. L. and Smowton, P. M. 1998. Modelling quantum well laser diode structures. Presented at: NATO Advanced Study Institute on Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices, Sozopol, Bulgaria, 18-28 September 1996 Presented at Balkanski, M. and Andreev, N. eds.Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices: Proceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, 18-28 September 1996. Nato Science Partnership Subseries: 3 Vol. 42. Dordrecht: Kluwer pp. 77-89.

1997

• Mogensen, P. C., Smowton, P. M. and Blood, P. 1997. Measurement of optical mode loss in visible emitting lasers. Applied Physics Letters 71(14), pp. 1975-1977. (10.1063/1.119759)
• Chow, W. W., Smowton, P. M., Blood, P., Girndt, A., Jahnke, F. and Koch, S. W. 1997. Comparison of experimental and theoretical GaInP quantum well gain spectra. Applied Physics Letters 71(2), pp. 157-159. (10.1063/1.119489)
• Smowton, P. M. and Blood, P. 1997. On the determination of internal optical mode loss of semiconductor lasers. Applied Physics Letters 70(18), pp. 2365-2367. (10.1063/1.118875)
• Smowton, P. M. and Blood, P. 1997. The differential efficiency of quantum-well lasers. IEEE Journal of Selected Topics in Quantum Electronics 3(2), pp. 491-498. (10.1109/2944.605699)
• Smowton, P. M. and Blood, P. 1997. Fermi level pinning and differential efficiency in GaInP quantum well laser diodes. Applied Physics Letters 70(9), pp. 1073-1075. (10.1063/1.118488)
• Foulger, D. L., Smowton, P. M., Blood, P. and Mawby, P. A. 1997. Self-consistent simulation of (AlGa)InP/GaInP visible lasers. IEE Proceedings Optoelectronics 144(1), pp. 23-29. (10.1049/ip-opt:19971071)
• Smowton, P. M. and Blood, P. 1997. Visible emitting (AlGa)InP laser diodes. In: Manasreh, M. O. ed. Strained-layer quantum wells and their applications. Optoelectronic properties of semiconductors and superlattices Vol. 4. Amsterdam: Gordon and Breach, pp. 431-487.
• Blood, P., Foulger, D. L., Smowton, P. M. and Mawby, P. 1997. Simulation of GaInP laser diode structures. Presented at: Physics and Simulation of Optoelectronic Devices V, San Jose, CA, USA, 10-14 February 1997 Presented at Osinski, M. and Chow, W. W. eds.Proceedings of Physics and Simulation of Optoelectronic Devices V, 10-14 February, 1997, San Jose, California, USA. Proceedings of SPIE Vol. 2994. Bellingham, WA: SPIE pp. 736-746., (10.1117/12.275623)
• Smowton, P. M., Blood, P., Mogensen, P. C. and Roberts, J. S. 1997. AlxGayIn1-x-yAs/AlGaAs quantum well lasers at 670-750nm. Presented at: In-plane Semiconductor Lasers: From Ultraviolet to Midinfrared, San Jose, CA, USA, 10-13 February 1997 Presented at Choi, H. K. and Zory, P. S. eds.In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared. Proceedings of SPIE Vol. 3001. Bellingham, WA: SPIE pp. 153-162., (10.1117/12.273783)
• Cooper, C., Blood, P., Molloy, C., Chen, X. Y., Westwood, D. I., Smowton, P. M. and Somerford, D. 1997. New approach to blue-shifting asymmetric quantum wells. Presented at: In-plane Semiconductor Lasers: From Ultraviolet to Midinfrared, San Jose, CA, USA, 10-13 February 1997 Presented at Choi, H. K. and Zory, P. S. eds.Proceedings of In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, 10-13 February 1997, San Jose, California. Proceedings of SPIE Vol. 3001. Bellingham, WA: SPIE pp. 184-191., (10.1117/12.273787)
• Mogensen, P. C., Hall, S. A., Bangert, U., Dawson, P., Smowton, P. M. and Blood, P. 1997. The impact of structural non-uniformity on the operation of (AlyGa1-y)(x)In1-xP quantum well lasers at high strain. Presented at: Royal Microscopical Society Conference 1997, Oxford, UK, 7-10 April 1997 Presented at Cullis, A. G. and Hutchinson, J. L. eds.Microscopy of Semiconducting Materials 1997: Proceedings of the Royal Microscopical Society Conference held at Oxford University, 7-10 April 1997. Institute of Physics Conference Series Vol. 157. London: Taylor & Francis pp. 543-546.

1996

• Rees, P., Cooper, C., Smowton, P. M., Blood, P. and Hegarty, J. 1996. Calculated threshold currents of nitride- and phosphide-based quantum-well lasers. IEEE Photonics Technology Letters 8(2), pp. 197-199. (10.1109/68.484239)
• Mogensen, P. C., Smowton, P. M. and Blood, P. 1996. Highly strained GaxIn1-xP/(AlyGa1-y)(0.51)In0.49P quantum well lasers. Presented at: 15th IEEE International Semiconductor Laser Conference, Haifa, Israel, 13-18 October 199615th IEEE International Semiconductor Laser Conference, 1996. Los Alamitos, CA: IEEE pp. 97-98., (10.1109/ISLC.1996.553765)
• Smowton, P. M. and Blood, P. 1996. The differential efficiency of quantum well lasers. Presented at: 15th IEEE International Semiconductor Laser Conference, Haifa, Israel, 13-18 October 199615th IEEE International Semiconductor Laser Conference, 1996. Los Alamitos, CA: IEEE pp. 51-52., (10.1109/ISLC.1996.553743)
• Blood, P., Smowton, P. M. and Foulger, D. 1996. Carrier distributions and leakage in (AlGa)InP visible emitting lasers. Presented at: Laser Diodes and Applications II, 12 April 1996 Presented at Linden, K. J. and Akkapeddi, P. R. eds.Proceedings of Laser Diodes and Applications II, 12 April 1996. Proceedings of SPIE Vol. 2682. Bellingham, WA: SPIE pp. 98-107., (10.1117/12.237645)
• Blood, P., Rees, P., Cooper, C. and Smowton, P. M. 1996. Critical issues in laser diode calculations. Presented at: Physics and Simulation of Optoelectronic Devices IV, 1 May 1996 Presented at Chow, W. W. and Osinski, M. eds.Proceedings of Physics and Simulation of Optoelectronic Devices IV, 1 May 1996. Proceedings of SPIE Vol. 2693. Bellingham, WA: SPIE pp. 444-454., (10.1117/12.238980)

1995

• Smowton, P. M. and Blood, P. 1995. GaInP-(AlyGa1-y)InP 670 nm quantum-well lasers for high-temperature operation. IEEE Journal of Quantum Electronics 31(12), pp. 2159-2164. (10.1109/3.477741)
• Smowton, P. M., Blood, P., Mogensen, P. C. and Bour, D. P. 1995. Role of sublinear gain-current relationship in compressive and tensile strained 630 nm GaInP lasers. International Journal of Optoelectronics 10(5), pp. 383-391.
• Smowton, P. M. and Blood, P. 1995. Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers. Applied Physics Letters 67(9), pp. 1265-1267. (10.1063/1.114392)
• Rees, P., Cooper, C., Blood, P., Smowton, P. M. and Hegarty, J. 1995. Gain characteristics of GaN quantum wells including many body effects. Electronics Letters 31(14), pp. 1149-1150. (10.1049/el:19950826)
• Blood, P. and Smowton, P. M. 1995. Strain dependence of threshold current in fixed-wavelength GaInP laser diodes. IEEE Journal of Selected Topics in Quantum Electronics 1(2), pp. 707-711. (10.1109/2944.401260)

1994

• Smowton, P. M., Summers, H. D., Rees, P. and Blood, P. 1994. Threshold current of 670-nm AlGaInP strained quantum well lasers. IEEE Photonics Technology Letters 6(8), pp. 910-912. (10.1109/68.313049)
• Smowton, P. M., Summers, H. D., Rees, P. and Blood, P. 1994. Optimisation of 670 nm strained-quantum-well laser diodes for high-temperature operation. IEE Proceedings Optoelectronics 141(2), pp. 136-140. (10.1049/ip-opt:19949992)
• Smowton, P. M., Summers, H. D., Rees, P. and Blood, P. 1994. Optimization of 670-nm strained quantum well laser diodes. Presented at: Laser diode technology and applications VI, Los Angeles, CA, USA, 25-27 January 1994 Presented at Chen, P. C., Johnson, L. A. and Temkin, H. eds.Proceedings of Laser Diode Technology and Applications VI, Los Angeles, CA, USA, 25-27 January 1994. Proceedings of SPIE Vol. 2148. Bellingham, WA: SPIE pp. 189-200., (10.1117/12.176614)
• Blood, P. and Smowton, P. M. 1994. Recombination, gain and carrier leakage in (AlGa)InP visible lasers. Presented at: LEOS '94: IEEE Lasers and Electro-Optics Society 1994 7th Annual Meeting, Boston, MA, USA, 31 October - 3 November 1994LEOS '94 Conference Proceedings: IEEE Lasers and Electro-Optics Society Annual Meeting 1994, Vol. 1. Los Alamitos, CA: IEEE pp. 321-322., (10.1109/LEOS.1994.587023)

1992

• Smowton, P. M., Thomas, B. and Pratt, R. H. 1992. Frequency stabilisation of visible output laser diodes. IEE Proceedings J Optoelectronics 139(1), pp. 75-78.

1990

• Cho, L. A. L. S., Smowton, P. M. and Thomas, B. 1990. Spectral gain measurements for semiconductor laser diodes. IEE Proceedings J Optoelectronics 137(1), pp. 64-68.

1986

• Blood, P., Fletcher, E. D., Hulyer, P. J. and Smowton, P. M. 1986. Emission wavelength of AlGaAs‐GaAs multiple quantum well lasers. Applied Physics Letters 48(17), pp. 1111-1113. (10.1063/1.96613)