Professor Peter Smowton

(he/him)

2025

• Baker, J. et al. 2025. Thermal performance of 940 nm AlGaAs-Based VCSELs grown on germanium. IEEE Photonics Journal 17 (2) 1501104. (10.1109/jphot.2025.3552951)
• Gillgrass, S. J. et al. 2025. AlGaAs VSCELs grown on thin 150 mm germanium substrates. JPhys: Photonics 7 (3) 035033. (10.1088/2515-7647/adef1f)
• Jakobs, B. , Gallagher, D. and Smowton, P. M. 2025. Implementation of a spurious solution free 8-band k.p model for the identification of absorption spectra of InAs quantum dots grown on GaAs [Poster Presentation Abstract]. Presented at: 2025 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) Munich, Germany 23-27 June 2025. Proceedings of the 2025 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference. IEEE(10.1109/cleo/europe-eqec65582.2025.11110451)
• Jandu, G. M. et al. 2025. Optical gain in O-band active regions with multiple dot-in-well layers. APL Photonics 10 (10) 106112. (10.1063/5.0275039)
• Jandu, G. M. and Smowton, P. M. 2025. Graphics processor unit accelerated design of multimode interference reflectors. Presented at: International Conference on Numerical Simulation of Optoelectronic Devices, (NUSOD) Lodz, Poland 14-18 September 2025. International Conference on Numerical Simulation of Optoelectronic Devices, (NUSOD). IEEE. , pp.15-16. (10.1109/nusod64393.2025.11199575)
• Ji, H. et al. 2025. Infrared photovoltaic–battery hybrid systems enabled by colloidal quantum dots. Chemistry - An Asian Journal 20 (21) e01958. (10.1002/asia.202401958)
• Michael, L. et al. 2025. Two-waveguide approach for monolithic active/passive photonic integration on GaAs. Semiconductor Science and Technology 40 (11) 115015. (10.1088/1361-6641/ae1c66)
• Mishra, P. et al. 2025. Achieving selectivity and reduced absorption for low loss monolithic InAs QD based III-V photonic integration. Journal of Physics D: Applied Physics 58 (26) 265104. (10.1088/1361-6463/ade450)
• Mishra, P. et al. 2025. High temperature operation of co-doped InAs quantum dot laser for O-band emission. IEEE Photonics Journal 17 (3) 0600606. (10.1109/jphot.2025.3560443)
• Park, J. et al., 2025. High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique. Journal of Physics D: Applied Physics 58 (18) 185101. (10.1088/1361-6463/adc275)
• Salmond, B. et al. 2025. MOCVD-grown c-band InAs/InAlGaAs quantum dot laterally-coupled distributed feedback lasers. Presented at: OPTO 2025 San Francisco, California, USA 25-31 January 2025. Published in: Belyanin, A. A. and Smowton, P. M. eds. Proceedings of SPIE, Novel In-Plane Semiconductor Lasers XXIV. Vol. PC1338.SPIE. (10.1117/12.3048183)
• Yan, Z. et al. 2025. MOCVD-grown InAs/InP quantum dot lasers with low threshold current. Optics Express 33 (15), pp.31195-31203. (10.1364/OE.568365)

2024

• Albeladi, F. et al. 2024. A platform for integrated photonics. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 2 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717359)
• Albeladi, F. et al. 2024. On-chip InAs QD ring-resonator multi-mode interference reflector lasers for PICs. Presented at: 2024 IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717372)
• Albeladi, F. T. et al. 2024. Multi-mode interference reflector InAs-QD mode-locked laser for integrated photonics. Presented at: 2024 IEEE Photonics Conference (IPC) Rome, Italy 10-14 November 2024. 2024 IEEE Photonics Conference (IPC). IEEE(10.1109/ipc60965.2024.10799723)
• Albeladi, F. T. et al., 2024. InAs quantum dot-based one- and two-port multimode interference reflectors for integrated photonic devices: design, fabrication, and evaluation. Presented at: SPIE OPTO 2024 San Francisco, CA, USA January 2024. Proceedings Novel In-Plane Semiconductor Lasers XXIII. Vol. 12905.SPIE. , pp.40. (10.1117/12.3003224)
• Baker, J. et al. 2024. Improved thermal performance of VCSELs on germanium substrates. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717337)
• Burman, T. T. et al. 2024. Assessing plasma-etched InP laser facet quality. IEEE Photonics Technology Letters (10.1109/LPT.2024.3397082)
• Deng, H. et al., 2024. 1.3 µm InAs/GaAs quantum‐dot lasers with p‐type, n‐type, and co‐doped modulation. Advanced Physics Research 3 (10) 2400045. (10.1002/apxr.202400045)
• Gillgrass, S. et al. 2024. First demonstration of 940-nm VCSELs fabricated over 200-mm GaAs- and Ge-substrates. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE(10.1109/islc57752.2024.10717349)
• Jarvis, L. et al. 2024. Improving the performance of co-doped 1300nm QD lasers and modulators. Presented at: IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717406)
• Maglio, B. et al. 2024. Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices. Optical and Quantum Electronics 56 (4) 687. (10.1007/s11082-024-06362-2)
• Maglio, B. C. et al. 2024. Photovoltaic modulating retroreflectors for low power consumption free space optical communication systems. IEEE Journal of Quantum Electronics 60 (5) 4000409. (10.1109/JQE.2024.3374101)
• Mishra, P. et al. 2024. Achieving O-band InAs quantum dot laser operation at 200 °C. Presented at: 2024 IEEE 29th International Semiconductor Laser Conference (ISLC) Orlando, FL, USA 29 September - 02 October 2024. 2024 IEEE 29th International Semiconductor Laser Conference (ISLC). IEEE. , pp.1-2. (10.1109/islc57752.2024.10717409)
• Salmond, B. et al. 2024. Fabricating distributed feedback laser gratings with bismuth and gold focused ion beams. Journal of Vacuum Science & Technology B 42 (6) 062214. (10.1116/6.0004056)
• Solari, W. et al. 2024. Image sensors and photodetectors based on low‐carbon footprint solution‐processed semiconductors. Advanced Sensor Research (10.1002/adsr.202400059)

2023

• Albeladi, F. T. et al. 2023. Design and characterisation of multi-mode interference reflector lasers for integrated photonics. Journal of Physics D: Applied Physics 56 (38) 384001. (10.1088/1361-6463/acdb80)
• Albeladi, F. T. et al. 2023. Low-loss III-V photonics and high efficiency grating couplers incorporating low-index AlOx layers. Presented at: 2023 IEEE Photonics Conference (IPC) 12-16 November 2023. Proceedings 2023 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC57732.2023.10360787)
• Albeladi, F. T. et al. 2023. Multi-mode interference reflector for integrated photonics. Presented at: 2023 IEEE Photonics Conference (IPC) 12-16 November 2023. Proceedings 2023 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC57732.2023.10360650)
• Albeladi, F. T. et al., 2023. Realisation of multi-mode reflector lasers for integrated photonics. Presented at: Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) 26-30 June 2023. 2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE. (10.1109/CLEO/Europe-EQEC57999.2023.10231858)
• Enderson, A. et al. 2023. Monolithic InAs QDs based active-passive integration for photonic integrated circuits. Presented at: 2023 IEEE Photonics Conference (IPC) 12-16 November 2023. Proceedings 2023 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC57732.2023.10360634)
• Gillgrass, S. J. et al. 2023. Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs. Journal of Physics D: Applied Physics 56 (15) 154002. (10.1088/1361-6463/acc040)
• Hentschel, C. et al. 2023. Gain measurements on VCSEL material using segmented contact technique. Journal of Physics D: Applied Physics 56 (7), pp.074003. (10.1088/1361-6463/acaf0b)

2022

• Albeladi, F. T. et al. 2022. Multi-mode interference reflector based InAs-QD laser. Presented at: 28th International Semiconductor Laser Conference (ISLC) Matsue, Japan 16-19 October 2022. Proceedings of 28th International Semiconductor Laser Conference (ISLC). IEEE. (10.23919/ISLC52947.2022.9943389)
• Baker, J. et al. 2022. VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications. IET Optoelectronics (10.1049/ote2.12082)
• Baker, J. et al. 2022. VCSEL quick fabrication for assessment of large diameter epitaxial wafers. IEEE Photonics Journal 14 (3)(10.1109/JPHOT.2022.3169032)
• Deng, H. et al., 2022. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. Journal of Physics D: Applied Physics 55 (21) 215105. (10.1088/1361-6463/ac55c4)
• Jarvis, L. K. et al. 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. Presented at: SPIE OPTO, 2022 22-27 January 2022. Society of Photo-optical Instrumentation Engineers(10.1117/12.2614632)
• Liu, J. et al., 2022. Theoretical analysis and modelling of degradation for III–V lasers on Si. Journal of Physics D: Applied Physics 55 (40) 404006. (10.1088/1361-6463/ac83d3)
• Osypiw, A. et al. 2022. Solution-processed colloidal quantum dots for light emission. Materials Advances 3 , pp.6773-6790. (10.1039/D2MA00375A)
• Pan, S. et al., 2022. Multi-wavelength 128 Gbit s−1 λ−1 PAM4 optical transmission enabled by a 100 GHz quantum dot mode-locked optical frequency comb. Journal of Physics D: Applied Physics 55 (14) 144001. (10.1088/1361-6463/ac4365)

2021

• Baker, J. et al. 2021. Quick fabrication VCSELs for characterisation of epitaxial material. Applied Sciences 11 (20) 9369. (10.3390/app11209369)
• Baker, J. et al. 2021. Sub-mA threshold current vertical cavity surface emitting lasers with a simple fabrication process. Presented at: 2021 IEEE Photonics Conference (IPC) 18-21 October 2021. Proceedings of the 2021 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC48725.2021.9592977)
• Hentschel, C. et al. 2021. Gain measurements on vertical cavity surface emitting laser material using segmented contact technique. Presented at: 2021 IEEE Photonics Conference (IPC) 18-21 October 2021. 2021 IEEE Photonics Conference (IPC). IEEE. (10.1109/IPC48725.2021.9592961)
• Li, Z. et al. 2021. Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate. Applied Physics Letters 118 131101. (10.1063/5.0043815)
• Maglio, B. et al. 2021. The limits to peak modal gain in p-modulation doped indium arsenide quantum dot laser diodes. Presented at: 2021 IEEE Photonics Conference (IPC) Vancouver, BC, Canada 18-21 October 2021. 2021 IEEE Photonics Conference (IPC). IEEE. , pp.1-2. (10.1109/IPC48725.2021.9592852)
• Mahoney, J. et al. 2021. QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots. Presented at: CLEO: Applications and Technology 2021 9-14 May 2021. OSA Technical Digest. (10.1364/CLEO_AT.2021.JTU3A.167)
• Yang, J. et al., 2021. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates. Journal of Physics D: Applied Physics 54 (3) 035103. (10.1088/1361-6463/abbb49)

2020

• Alharbi, R. et al. 2020. Design and realisation of InP mode-locked lasers emitting in the 730nm wavelength range. Presented at: Novel In-Plane Semiconductor Lasers XIX San Francisco, CA, USA 3-6 February 2020.
• Li, B. et al., 2020. Colloidal quantum dot hybrids: an emerging class of materials for ambient lighting. Journal of Materials Chemistry C 8 (31), pp.10676-10695. (10.1039/d0tc01349h)
• Li, K. et al., 2020. Inversion boundary annihilation in GaAs Monolithically grown on on-axis Silicon (001). Advanced Optical Materials 8 (22) 2000970. (10.1002/adom.202000970)
• Li, Z. et al. 2020. Monolithic InP quantum dot mode-locked lasers emitting at 730 nm. IEEE Photonics Technology Letters 32 (17), pp.1073-1076.
• Lu, Y. et al., 2020. Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon. Optics Letters 45 (19), pp.5468-5471. (10.1364/OL.401042)

2019

• Abadia, N. et al. 2019. Plasmonic integrated multimode filter. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019 Angers, France 9-13 July 2019. 2019 21st International Conference on Transparent Optical Networks (ICTON). IEEE(10.1109/ICTON.2019.8840183)
• Allford, C. et al. 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019) Tyndall National Institute, University College Cork, Cork, Ireland 27-28 September 2019.
• Allford, C. P. et al. 2019. InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019) Tyndall National Institute, University College Cork, Cork, Ireland 27-28 September 2019.
• Jarvis, L. et al. 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX San Francisco, CA, USA 3-6 February 2020.
• Le Boulbar, E. D. et al. 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
• Le Boulbar, E. D. et al. 2019. Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019 Angers, France 9-13 July 2019. 2019 21st International Conference on Transparent Optical Networks (ICTON). IEEE. , pp.1-4. (10.1109/ICTON.2019.8840542)
• Li, Z. et al. 2019. Monolithically mode-locked self-assembled InP quantum dot lasers. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
• Li, Z. et al. 2019. Monolithic growth InAs quantum dots lasers on (001) silicon emitting at 1.5 um. Presented at: UK Semiconductors Conference 2019 (UKSC 2019) Sheffield, England. U.K. 10-11 July 2019.
• Li, Z. et al. 2019. 12.5-GHz InP quantum dot monolithically mode-locked lasers emitting at 740 nm. Presented at: CLEO: Science and Innovations 2019 San Jose, CA, USA 5-10 May 2019. CLEO: Science and Innovations 2019. Optical Society of America. , pp.SM3N.6. (10.1364/CLEO_SI.2019.SM3N.6)
• Li, Z. et al. 2019. InP quantum dot mode-locked lasers and materials studies. Presented at: 2019 IEEE Photonics Conference (IPC) San Antonio, TX, USA 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE. , pp.1. (10.1109/IPCon.2019.8908334)
• Li, Z. et al. 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC) San Antonio, TX, USA 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE. , pp.1. (10.1109/IPCon.2019.8908479)
• Shutts, S. et al. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) 1900406. (10.1109/JSTQE.2019.2915994)
• Zaouris, D. et al., 2019. MacV: VCSELs for miniature atomic clocks. Presented at: 2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC) Orlando, FL, USA 14-18 April 2019. 2019 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC). IEEE. , pp.1. (10.1109/FCS.2019.8856005)

2018

• Allford, C. P. et al. 2018. Barrier width effects in InAsP/AlGaInP quantum dot lasers. Presented at: UK Semiconductor Conference 2018 (UKSC 2018) Sheffield, UK 4-5 July 2018.
• Liao, M. et al., 2018. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photonics Research 6 (11), pp.1062-1066. (10.1364/PRJ.6.001062)
• Shutts, S. et al. 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference Santa Fe, NM, USA 16-19 September 2018. 2018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE. , pp.85-86. (10.1109/ISLC.2018.8516178)
• Thomas, R. et al., 2018. In-situ fabricated 3D micro-lenses for photonic integrated circuits. Optics Express 26 (10), pp.13436-13442. (10.1364/OE.26.013436)

2017

• Gillgrass, S. , Thomas, R. and Smowton, P. M. 2017. Novel coupled-cavity sensing mechanism for on-chip detection of microparticles (Conference Presentation). Presented at: SPIE OPTO 2017 San Francisco, CA, USA 28 Jan - 2 Feb 2017. Published in: Belyanin, A. A. and Smowton, P. eds. Proceedings Volume 10123, Novel In-Plane Semiconductor Lasers XVI. Vol. 10123.Society of Photo-Optical Instrumentation Engineers (SPIE). (10.1117/12.2253613)
• Thomas, R. et al. 2017. Photonic integration platform with pump free microfluidics. Optics Express 25 (20), pp.23634-23644. (10.1364/OE.25.023634)

2016

• Chen, S. et al., 2016. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics 10 , pp.307-311. (10.1038/nphoton.2016.21)
• Krysa, A. B. et al., 2016. InAsP/AlGaInP/GaAs QD laser operating at ~770 nm. Journal of Physics: Conference Series 740 (1) 012008. (10.1088/1742-6596/740/1/012008)
• Orchard, J. R. et al., 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics Express 24 (6), pp.6196-6202. (10.1364/OE.24.006196)
• Smowton, P. M. et al. 2016. Quantum dot lasers for integrated photonics. Presented at: 2016 International Semiconductor Laser Conference (ISLC) Kobe, Japan 12-15 September 2016. 2016 International Semiconductor Laser Conference (ISLC). IEEE.
• Thomas, R. et al. 2016. Mechanism for enhanced wavelength tuning in gain-levered InP quantum dot lasers. IET Optoelectronics 10 (2), pp.66-69. (10.1049/iet-opt.2015.0062)

2015

• Elliott, S. N. and Smowton, P. M. 2015. Manufacturing-tolerant compact red-emitting laser diode designs for next generation applications. IET Optoelectronics 9 (2), pp.75-81. (10.1049/iet-opt.2014.0093)
• Finch, P. et al., 2015. Improving the optical bandwidth of passively mode-locked InAs quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 21 (6) 1900507. (10.1109/JSTQE.2015.2416675)
• Karomi, I. et al. 2015. InAsP quantum dot lasers grown by MOVPE. Optics Express 23 (21), pp.27282-27291. (10.1364/OE.23.027282)
• Kasim, M. et al., 2015. Reducing thermal carrier spreading in InP quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 21 (6) 1900306. (10.1109/JSTQE.2015.2403716)
• Shutts, S. et al. 2015. Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing. Semiconductor Science and Technology 30 (4) 044002. (10.1088/0268-1242/30/4/044002)
• Smowton, P. M. et al. 2015. Effect of thermal carrier spreading on the temperature dependence of threshold current in InP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIV San Francisco, CA, USA 7 Feb 2015. Published in: Belyanin, A. A. and Smowton, P. M. eds. Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820F (March 10, 2015). Vol. 9382.The International Society for Optical Engineering. , pp.93820F. (10.1117/12.2086985)
• Sobiesierski, A. et al. 2015. A two-stage surface treatment for the long-term stability of hydrophilic SU-8. Surface and Interface Analysis 47 (13), pp.1174-1179. (10.1002/sia.5870)
• Thomas, R. et al. 2015. Integrated III-V semiconductor flow cytometer with capillary fill micro-fluidics. Presented at: 2015 IEEE Photonics Conference (IPC) Reston, VA, USA 4 - 8 October 2015. IEEE Xplore. IEEE. , pp.7-8. (10.1109/IPCon.2015.7323580)
• Thomas, R. , Smowton, P. M. and Blood, P. 2015. Radiative recombination rate measurement by the optically pumped variable stripe length method. Optics Express 23 (3), pp.3308-3315. (10.1364/OE.23.003308)

2014

• Belyanin, A. A. et al., 2014. Femtosecond pulse generation from a two-section mode-locked quantum-dot laser using random population. Presented at: Novel In-Plane Semiconductor Lasers XIII San Francisco 3 February 2014 through 6 February 2014. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9002.SPIE. , pp.90020E. (10.1117/12.2039130)
• Chen, S. et al., 2014. InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate. ACS Photonics 1 (7), pp.638-642. (10.1021/ph500162a)
• Elliott, S. et al. 2014. Improved laser performance in NIR InP dot based structures with strained layers. Presented at: 2014 International Semiconductor Laser Conference (ISLC) Palma de Mallorca, Spain 7-10 Sept 2014. Proceedings of the 2014 International Semiconductor Laser Conference (ISLC). IEEE. , pp.86-87. (10.1109/ISLC.2014.176)
• Hutchings, M. et al. 2014. Fermi-dirac and random carrier distributions in quantum dot lasers. Applied Physics Letters 104 (3) 031103. (10.1063/1.4862813)
• Shutts, S. , Smowton, P. M. and Krysa, A. B. 2014. Dual-wavelength InP quantum dot lasers. Applied Physics Letters 104 (24) 241106. (10.1063/1.4883857)

2013

• Al-Ghamdi, M. S. et al., 2013. Absorption, Gain, and Threshold in InP/AlGaInP Quantum Dot Laser Diodes. IEEE Journal of Quantum Electronics 49 (4), pp.389-394. (10.1109/JQE.2013.2245496)
• Elliott, S. et al. 2013. Comparison of catastrophic optical damage in InP/(Al)GaInP quantum dot and quantum well diode lasers. Presented at: Novel In-Plane Semiconductor Lasers XII San Francisco, USA 4-7 February 2013. Published in: Belyanin, A. A. and Smowton, P. eds. Novel In-Plane Semiconductor Lasers XII. Proceedings of SPIE Vol. 8640. Bellingham: SPIE. , pp.86401H. (10.1117/12.2008319)
• Finch, P. et al., 2013. Femtosecond pulse generation in passively mode locked InAs quantum dot lasers. Applied Physics Letters 103 (13) 131109. (10.1063/1.4822433)
• Hopkinson, M. , Martin, T. and Smowton, P. M. 2013. III-V semiconductor devices integrated with silicon [Preface]. Semiconductor Science and Technology 28 (9) 090301. (10.1088/0268-1242/28/9/090301)
• Shutts, S. , Smowton, P. M. and Krysa, A. B. 2013. InP quantum dot lasers with temperature insensitive operating wavelength. Applied Physics Letters 103 (6) 061106. (10.1063/1.4817732)

2012

• Elliott, S. et al. 2012. Catastrophic optical bulk damage in InP 7xx emitting quantum dot diode lasers. Semiconductor Science and Technology 27 (10) 102001. (10.1088/0268-1242/27/10/102001)
• Elliott, S. , Smowton, P. M. and Krysa, A. B. 2012. Strained confinement layers in InP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XI San Francisco, CA, USA 23-26 January 2012. Published in: Belyanin, A. A. and Smowton, P. M. eds. Novel In-Plane Semiconductor Lasers XI. Proceedings of the SPIE Vol. 8277. Bellingham, WA: SPIE(10.1117/12.913613)
• Elliott, S. et al. 2012. The effect of strained confinement layers in InP self-assembled quantum dot material. Semiconductor Science and Technology 27 (9) 094008. (10.1088/0268-1242/27/9/094008)
• Elliott, S. N. , Smowton, P. M. and Krysa, A. B. 2012. 700nm InP quantum dot lasers with strained confinement layers. Presented at: 23rd IEEE International Semiconductor Laser Conference (ISLC) San Diego, CA, USA 7-10 Oct 2012. Proceedings of 23rd IEEE International Semiconductor Laser Conference (ISLC). IEEE. , pp.62-63. (10.1109/ISLC.2012.6348335)
• O'Driscoll, I. et al. 2012. Effect of proton bombardment on InAs dots and wetting layer in laser structures. Applied Physics Letters 100 (26) 261105. (10.1063/1.4730964)

2011

• Al-Ghamdi, M. et al., 2011. Dot density effect by quantity of deposited material in InP/AlGaInP structures. IEEE Photonics Technology Letters 23 (16), pp.1169-1171. (10.1109/LPT.2011.2157910)
• Ferguson, J. et al. 2011. Optical gain in GaInNAs and GaInNAsSb quantum wells. IEEE Journal of Quantum Electronics 47 (6), pp.870-877. (10.1109/JQE.2011.2129492)
• Hutchings, M. et al. 2011. Temperature dependence of the gain peak in p-doped InAs quantum dot lasers. Applied Physics Letters 99 (15), pp.151118-151121. (10.1063/1.3652702)
• Shutts, S. et al. 2011. Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X San Francisco, CA, USA 25-28 January 2011. Published in: Belyanin, A. and Smowton, P. M. eds. Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011. Vol. 7953.SPIE Proceedings Vol. 7953. Bellingham, WA: IEEE. , pp.795308. (10.1117/12.876454)
• Smowton, P. M. et al. 2011. Temperature-dependent threshold current in InP Quantum-Dot Lasers. IEEE Journal of Selected Topics in Quantum Electronics 17 (5), pp.1343-1348. (10.1109/JSTQE.2011.2115235)
• Smowton, P. M. , Elliott, S. N. and Krysa, A. B. 2011. Quantum dot lasers - the role of the 2D states. Presented at: 2011 IEEE Photonics Conference (PHO) Arlington, VA, USA 9-13 Oct 2011. Proceeding of the 2011 IEEE Photonics Conference (PHO). IEEE. , pp.107-108. (10.1109/PHO.2011.6110448)
• Smowton, P. M. et al. 2011. Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers. Presented at: 2011 Conference on Lasers and Electro-Optics (CLEO) Baltimore Convention Center, Baltimore, MD, USA 1-6 May 2011. CLEO: Science and Innovations 2011. , pp.CFL1. (10.1364/CLEO_SI.2011.CFL1)
• Sobiesierski, A. , Naidu, D. and Smowton, P. M. 2011. The lateral ambipolar diffusion length in quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers X San Francisco, CA, USA 25-28 January 2011. Published in: Belyanin, A. A. and Smowton, P. M. eds. Proceedings of Novel In-Plane Semiconductor Lasers X, San Francisco, USA, 25-28 January 2011. Vol. 7953.Proceedings of SPIE Bellingham, WA: The International Society for Optical Engineering. , pp.795306. (10.1117/12.874474)
• Sobiesierski, A. and Smowton, P. M. 2011. Quantum-dot lasers: physics and applications. In: Bhattacharya, P. , Fornari, R. and Kamimura, H. eds. Comprehensive Semiconductor Science and Technology: Volume 6: Devices and Applications. Burlington, VT: Elsevier. , pp.353-384. (10.1016/B978-0-44-453153-7.00034-1)

2010

• Elliott, S. et al. 2010. Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes. Journal of Applied Physics 107 (12) 123116. (10.1063/1.3437395)
• Langbein, W. W. et al. 2010. Ultrafast gain dynamics in InP quantum-dot optical amplifiers. Applied Physics Letters 97 (21) 211103. (10.1063/1.3518715)
• Michell, G. J. , Smowton, P. M. and Summers, H. D. 2010. Manipulation of optical modes in quantum dot laser diodes by selective oxidation of high aluminum content AlGaAs layers. Presented at: Novel in-plane semiconductor lasers IX San Francisco, CA, USA 25-28 January 2010. Published in: Belyanin, A. A. and Smowton, P. M. eds. Proceedings of Novel In-Plane Semiconductor Lasers IX, San Francisco, USA, 28-28 January 2010. Proceedings of SPIE Vol. 7617. Bellingham, WA: SPIE. , pp.76161T. (10.1117/12.846843)
• Naidu, D. , Smowton, P. and Summers, H. D. 2010. The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices. Journal of Applied Physics 108 (4), pp.043108. (10.1063/1.3471812)
• O'Driscoll, I. , Blood, P. and Smowton, P. M. 2010. Random population of quantum dots in InAs–GaAs laser structures. IEEE Journal of Quantum Electronics 46 (4), pp.525-532. (10.1109/JQE.2009.2039198)
• O'Driscoll, I. et al. 2010. Many-body effects in InAs/GaAs quantum dot laser structures. Applied Physics Letters 97 (14) 141102. (10.1063/1.3496011)
• O'Driscoll, I. et al. 2010. Random population of InAs-GaAs quantum dots. Presented at: Novel in-plane semiconductor lasers IX San Francisco, CA, USA 25-28 January 2010. Published in: Belyanin, A. A. and Smowton, P. M. eds. Proceedings of Novel In-Plane Semiconductor Lasers IX, San Francisco, USA, 25-28 January 2010. Proceedings of SPIE Vol. 7616. Bellingham, WA: SPIE. , pp.761605. (10.1117/12.845843)
• Ridha, P. et al., 2010. Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast. IEEE Journal of Quantum Electronics 46 (2), pp.197-204. (10.1109/JQE.2009.2030339)
• Smowton, P. M. et al. 2010. Effect of growth temperature on InP QD lasers. IEEE Photonics Technology Letters 22 (2), pp.88-90. (10.1109/LPT.2009.2036245)
• Smowton, P. M. and Blood, P. 2010. Quantum dot lasers: theory and experiment. In: Lee, E. et al., VLSI Micro- and Nanophotonics: Science, Technology, and Applications. Boca Raton, FL: CRC Press. , pp.9.1-9.35.

2009

• AI Ghamdi, M. et al., 2009. Effect of temperature on threshold current density in InP/AlGaInP quantum dot laser structures. International Journal of Nano and Biomaterials 2 (1/2/3/), pp.147-154. (10.1504/IJNBM.2009.027708)
• Elliott, S. et al. 2009. Higher power density limit at COMD in GaInP/AlGaInP in quantum dots than in wells. Presented at: Novel in-plane semiconductor lasers VIII San Jose, CA, United States 26-29 January 2009. Published in: Belyanin, A. A. and Smowton, P. M. eds. Proceedings of Novel In-Plane Semiconductor Lasers VIII, San Jose, USA, 26-29 January 2009. Vol. 7230.Proceedings of the SPIE Bellingham, WA: The International Society for Optical Engineering. , pp.72300X. (10.1117/12.809341)
• Ferguson, J. et al. 2009. Nonradiative recombination in 1.56 μm GaInNAsSb/GaNAs quantum-well lasers. Applied Physics Letters 95 (23) 231104. (10.1063/1.3271182)
• Liu, H. et al. 2009. Self pulsing quantum dot lasers for optical coherence tomography. Presented at: Novel in-plane semiconductor lasers VIII San Jose, CA, USA 26-29 January 2009. Published in: Belyanin, A. A. and Smowton, P. M. eds. Proceedings of Novel In-Plane Semiconductor Lasers VIII, San Jose, USA, 26-29 January 2009. Vol. 7230.Proceedings of the SPIE Bellingham, WA: The International Society for Optical Engineering. , pp.72300A. (10.1117/12.813504)
• Liu, H. et al. 2009. Self-pulsing 1050 nm quantum dot edge emitting laser diodes. Applied Physics Letters 95 (10) 101111. (10.1063/1.3227654)
• O'Driscoll, I. , Smowton, P. M. and Blood, P. 2009. Low-temperature nonthermal population of InAs-GaAs quantum dots. IEEE Journal of Quantum Electronics 45 (4), pp.380-387. (10.1109/JQE.2009.2013869)
• Smowton, P. M. 2009. Editorial: Selected papers inspired by the Semiconductor and Integrated Optoelectronics (SIOE 2009) Conference. IET Optoelectronics 3 (6), pp.241. (10.1049/iet-opt.2009.9052)
• Tansu, N. et al., 2009. Introduction to the issue on solid-state lighting [Editorial]. IEEE Journal of Selected Topics in Quantum Electronics 15 (4), pp.1025-1027. (10.1109/JSTQE.2009.2021694)

2008

• Edwards, G. , Smowton, P. M. and Westwood, D. I. 2008. Dry etching of anisotropic microstructures for distributed bragg reflectors in AlGaInP/GaAs laser structures. IEEE Journal of Selected Topics in Quantum Electronics 14 (4), pp.1098-1103. (10.1109/JSTQE.2008.918260)
• Elliott, S. N. et al. 2008. Higher catastrophic optical mirror damage power density level at facet from quantum dot material. Presented at: IEEE 21st International Semiconductor Laser Conference, 2008. ISLC 2008 Sorrento, Italy 14-18 Sept 2008. Proceedings of the IEEE 21st International Semiconductor Laser Conference, 2008. ISLC 2008. IEEE. , pp.137-138. (10.1109/ISLC.2008.4636047)
• Smowton, P. M. 2008. Editorial: Selected papers inspired by the Semiconductor and Integrated Optoelectronics (SIOE 2008) Conference. IET Optoelectronics 2 (6), pp.209. (10.1049/iet-opt:20089030)
• Smowton, P. M. et al. 2008. InP/AlGaInP short wavelength quantum dot lasers. Presented at: IEEE 21st International Semiconductor Laser Conference, 2008. ISLC 2008. Sorrento, ItalyProceedings of IEEE 21st International Semiconductor Laser Conference, 2008. ISLC 2008.. IEEE. , pp.31-32. (10.1109/ISLC.2008.4635994)
• Smowton, P. M. et al. 2008. Origin of temperature-dependent threshold current in p-doped and undoped in(Ga)As quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 14 (4), pp.1162-1170. (10.1109/JSTQE.2008.920040)
• Tsvid, G. et al., 2008. Spontaneous radiative efficiency and gain characteristics of strained-layer InGaAs-GaAs quantum-well lasers. IEEE Journal of Quantum Electronics 44 (8), pp.732-739. (10.1109/JQE.2008.924242)

2007

• Edwards, G. et al. 2007. Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl-2/Ar inductively coupled plasma. Semiconductor Science and Technology 22 (9), pp.1010-1015. (10.1088/0268-1242/22/9/006)
• George, A. A. et al. 2007. Long wavelength quantum-dot lasers selectively populated using tunnel injection. Semiconductor Science and Technology 22 (5), pp.557-560. (10.1088/0268-1242/22/5/018)
• Krysa, A. B. et al., 2007. Low threshold InP/AlGaInP on GaAs QD laser emitting at ~740 nm. Journal of Crystal Growth 298 , pp.663-666. (10.1016/j.jcrysgro.2006.10.087)
• Lim, J. et al., 2007. Thermal performance investigation of DQW GaInNAs laser diodes. Presented at: International Conference on Numerical Simulation of Optoelectronic Devices 2007 (NUSOD 2007) Newark, DE, USA 24-28 September 2007. Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, Newark, USA, 24-28 September 2007. IEEE. , pp.19-20. (10.1109/NUSOD.2007.4349003)
• Lim, J. J. et al., 2007. Simulation of double quantum well GaInNAs laser diodes. IET Optoelectronics 1 (6), pp.260-265. (10.1049/iet-opt:20070036)
• Mexis, M. , Blood, P. and Smowton, P. M. 2007. Polarization response of quantum-confined structures using edge-photovoltage spectroscopy. Semiconductor Science and Technology 22 (12), pp.1298-1301. (10.1088/0268-1242/22/12/010)
• Naidu, D. et al. 2007. Role of device structure on the performance of quantum dot lasers. Presented at: LEOS 2007: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007 21-25 October 2007. LEOS 2007. The 20th Annual Meeting of the IEEE. IEEE. , pp.435-436. (10.1109/LEOS.2007.4382465)
• Ridha, P. et al., 2007. Polarization dependence study of electroluminescence and absorption from InAs / GaAs columnar quantum dots. Applied Physics Letters 91 (19) 191123. (10.1063/1.2811720)
• Sandall, I. C. et al., 2007. Nonradiative recombination in multiple layer in(Ga)As quantum-dot lasers. IEEE Journal of Quantum Electronics 43 (8), pp.698-703. (10.1109/JQE.2007.901583)
• Smowton, P. M. 2007. Editorial: Semiconductor and Integrated Optoelectronics (SIOE). IET Optoelectronics 1 (6), pp.241. (10.1049/iet-opt:20079032)
• Smowton, P. M. et al. 2007. Gain in p-doped quantum dot lasers. Journal of Applied Physics 101 (1), pp.01310701-01310707. (10.1063/1.2405738)
• Smowton, P. M. et al. 2007. Temperature-dependent gain and threshold in P-doped quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics 13 (5), pp.1261-1266. (10.1109/JSTQE.2007.903375)
• Smowton, P. M. et al. 2007. Maximising the gain: optimising the carrier distribution in InGaAs quantum dot lasers. Presented at: Physics and Simulation of Optoelectronic Devices XV San Jose, CA, USA 20 January 2007. Published in: Osinski, M. , Henneberger, F. and Arakawa, Y. eds. Physics and Simulation of Optoelectronic Devices XV. Proceedings of SPIE Vol. 6468. Bellingham, WA: SPIE. , pp.646817. (10.1117/12.702733)
• Thomson, J. D. et al., 2007. Optical gain and spontaneous emission in GaAsSb–InGaAs type-II “W” laser structures. IEEE Journal of Quantum Electronics 43 (7), pp.607-613. (10.1109/JQE.2007.899499)

2006

• Brown, I. H. et al., 2006. Time evolution of the screening of piezoelectric fields in InGaN quantum wells. IEEE Journal of Quantum Electronics 42 (12), pp.1202-1208. (10.1109/JQE.2006.883472)
• Brown, M. R. et al., 2006. Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes. Journal of Applied Physics 100 (8)(10.1063/1.2362906)
• Edwards, G. T. , Westwood, D. I. and Smowton, P. M. 2006. Selective etching of AlGaInP laser structures in a BCl3/Cl2 inductively coupled plasma. Semiconductor Science and Technology 21 (4) 513. (10.1088/0268-1242/21/4/017)
• Elliott, S. , Berry, G. and Smowton, P. M. 2006. Optimisation of high power AlGaInP laser diodes for optical storage applications. IEE Proceedings Optoelectronics 153 (6), pp.321-325. (10.1049/ip-opt:20060050)
• Sandall, I. C. et al., 2006. Recombination mechanisms in 1.3-μm InAs quantum-dot lasers. IEEE Photonics Technology Letters 18 (8), pp.965-967. (10.1109/LPT.2006.873560)
• Sandall, I. C. et al., 2006. The effect of p doping in InAs quantum dot lasers. Applied Physics Letters 88 (11) 111113. (10.1063/1.2186078)
• Sandall, I. C. et al., 2006. Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures. IEE Proceedings Optoelectronics 153 (6), pp.316-320. (10.1049/ip-opt:20060042)
• Sandall, I. C. et al. 2006. Temperature dependence of threshold current in p-doped quantum dot lasers. Applied Physics Letters 89 (15), pp.15111801-15111803. (10.1063/1.2361167)
• Smowton, P. M. 2006. Editorial: Semiconductor and Integrated Optoelectronics (SIOE) Conference 2006. IEE Proceedings Optoelectronics 153 (6), pp.275. (10.1049/ip-opt:20069027)
• Smowton, P. M. et al. 2006. Characterisation of modulation doped quantum dot lasers. Presented at: Novel In-plane Semiconductor Lasers V San Jose, CA, USA 21-26 January 2006. Published in: Mermelstein, C. and Bour, D. P. eds. Novel In-Plane Semiconductor Lasers V. Proceedings of SPIE Vol. 6133. Bellingham, WA: SPIE. , pp.61330T. (10.1117/12.650682)
• Thomson, J. D. et al. 2006. The influence of acceptor anneal temperature on the performance of InGaN/GaN quantum well light-emitting diodes. Journal of Applied Physics 99 (2) 024507. (10.1063/1.2165405)
• Walker, C. L. et al., 2006. Improved performance of 1.3-/spl mu/m In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers. IEEE Photonics Technology Letters 18 (14), pp.1557-1559. (10.1109/LPT.2006.879592)

2005

• Brown, I. H. et al. 2005. Determination of the Piezoelectric Field in InGaN Quantum Wells. Applied Physics Letters 86 131108. (10.1063/1.1896446)
• Lutti, J. et al. 2005. 740 nm InP/GaInP quantum-dot laser with 190 A cm/sup -2/ room temperature threshold current density. Electronics letters 41 (5), pp.247-248. (10.1049/el:20057201)
• Lutti, J. et al. 2005. Gain saturation in InP/GaInP quantum-dot lasers. Applied Physics Letters 86 (1) 011111. (10.1063/1.1844600)
• Matthews, D. R. et al. 2005. Dynamics of the wetting-layer-quantum-dot interaction in InGaAs self-assembled systems. IEEE Journal of Quantum Electronics 41 (3), pp.344-350. (10.1109/JQE.2004.841275)
• Mermelstein, C. et al., 2005. Growth and characterization of multiple layer quantum dot lasers. Presented at: Integrated Optoelectronic Devices 2005 San Jose, California, USA 22-27 January, 2005. Published in: Mermelstein, C. and Bour, D. P. eds. Novel In-Plane Semiconductor Lasers IV, Proceedings of the Conference held at San Jose, CA, 22 January 2005. Vol. 5738.SPIE Proceedings Bellingham, WA: SPIE. , pp.332. (10.1117/12.593278)
• Palmer, D. J. et al., 2005. Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers. Applied Physics Letters 86 (7) 071121. (10.1063/1.1868070)
• Smowton, P. M. et al. 2005. InP-GaInP quantum-dot lasers emitting between 690-750 nm. IEEE Journal of Selected Topics in Quantum Electronics 11 (5), pp.1035-1040. (10.1109/JSTQE.2005.853838)
• Sobiesierski, A. et al. 2005. AlGaInP laser diodes incorporating a 3λ/4 multiple quantum barrier. Applied Physics Letters 86 (2)(10.1063/1.1849847)
• Thomson, J. D. et al. 2005. Time evolution of piezoelectric field screening in InGaN quantum wells. Presented at: Physics and simulation of optoelectronic devices XIII San Jose, USA 24-27 January 2005. Published in: Osinski, M. , Henneberger, F. and Amano, H. eds. Physics and Simulation of Optoelectronic Devices XIII. Proceedings of SPIE Vol. 5722. Bellingham: SPIE. , pp.392-399. (10.1117/12.591898)
• Thomson, J. D. et al. 2005. The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes. Presented at: Physics and simulation of optoelectronic devices XIII San Jose, USA 24-27 January 2005. Published in: Osinski, M. , Henneberger, F. and Amano, H. eds. Physics and Simulation of Optoelectronic Devices XIII. Proceedings of SPIE Vol. 5722. Bellingham: SPIE. , pp.425-430. (10.1117/12.591897)
• Walker, C. L. et al., 2005. The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers. IEEE Photonics Technology Letters 17 (10), pp.2011-2013. (10.1109/LPT.2005.854393)

2004

• Brown, M. R. et al., 2004. Study of dual-valley transport across a multiquantum barrier to enhance carrier confinement. Applied Surface Science 234 (1-4), pp.434-438. (10.1016/j.apsusc.2004.05.074)
• Gmachl, C. F. et al., 2004. Carrier distribution, spontaneous emission, and gain in self-assembled quantum dot lasers. Presented at: Integrated Optoelectronic Devices 2004 San Jose, California, USAPublished in: Gmachl, C. F. and Bour, D. P. eds. Novel In-Plane Semiconductor Lasers III, Proceedings of the Conference held at San Jose, CA, 26 January 2004. Vol. 5365.SPIE Proceedings Bellingham, WA: SPIE. , pp.86. (10.1117/12.530429)
• Lenstra, D. et al., 2004. Mode structure of quantum dot semiconductor lasers. Presented at: SPIE Photonics Europe 2004 Strasbourg, France 26-30 April 2004. Published in: Lenstra, D. et al., Semiconductor Lasers and Laser Dynamics, Proceedings of the Conference held at Strasbourg, France, 26 April 2004. Vol. 5452.SPIE Proceedings Bellingham, WA: SPIE. , pp.518. (10.1117/12.545473)
• Lewis, G. M. et al. 2004. Optical properties of InP/GaInP quantum-dot laser structures. Applied Physics Letters 85 (11), pp.1904-1906. (10.1063/1.1794379)
• Matthews, D. R. et al., 2004. Saturable absorber characteristics in quantum dot lasers. Presented at: Novel In-Plane Semiconductor Lasers III San Jose, CA, USA 26 January 2004. Published in: Gmachl, C. F. and Bour, D. P. eds. Novel in-plane semiconductor lasers III. Proceedings of SPIE Vol. 5365. Bellingham, WA: SPIE. , pp.96. (10.1117/12.528789)
• Osborne, S. W. et al. 2004. Energy distributions of carriers in quantum dot laser structures. Presented at: Physics and Simulation of Optoelectronic Devices XI San Jose, CA, USA 26 January 2003. Published in: Osinski, M. , Amano, H. and Henneberger, F. eds. Physics and simulation of optoelectronic devices XII. Proceedings of SPIE Vol. 5349. Bellingham, WA: SPIE. , pp.63. (10.1117/12.540314)
• Osborne, S. W. et al. 2004. Optical absorption cross section of quantum dots. Journal of Physics: Condensed Matter 16 (35) S3749. (10.1088/0953-8984/16/35/016)
• Osborne, S. W. et al., 2004. State filling in InAs quantum-dot laser structures. IEEE journal of quantum electronics 40 (12), pp.1639-1645. (10.1109/JQE.2004.837331)
• Summers, H. D. et al. 2004. Laser dynamics in self-pulsating quantum dot systems. Journal of Applied Physics 95 (3) 1036. (10.1063/1.1636828)
• Tanguy, Y. et al., 2004. Mode formation in broad area quantum dot lasers at 1060 nm. Optics Communications 235 (4-6), pp.387-393. (10.1016/j.optcom.2004.02.048)
• Teng, K. S. et al., 2004. Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy. Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures 22 (4), pp.2014-2017. (10.1116/1.1768187)

2003

• Blood, P. et al. 2003. Characterization of semiconductor laser gain media by the segmented contact method. IEEE Journal of Selected Topics in Quantum Electronics 9 (5), pp.1275-1282. (10.1109/JSTQE.2003.819472)
• Lewis, G. M. et al. 2003. Effect of tensile strain/well-width combination on the measured gain-radiative current characteristics of 635 nm laser diodes. Applied Physics Letters 82 (10), pp.1524-1526. (10.1063/1.1559658)
• Pope, I. et al. 2003. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm. Applied Physics Letters 82 (17), pp.2755-2757. (10.1063/1.1570515)
• Schneider, H. C. et al., 2003. Many-body effects in quantum dot lasers. Presented at: Physics and Simulation of Optoelectronic Devices XI San Jose, CA, USA 25 January 2003. Published in: Osinski, M. , Amano, H. and Blood, P. eds. Physics and simulation of optoelectronic devices XI. Proceedings of SPIE Vol. 4986. Bellingham, WA: SPIE. , pp.29. (10.1117/12.482334)
• Smowton, P. et al. 2003. Non-uniform carrier distribution in multi-quantum-well lasers. Applied Physics Letters 83 (3), pp.419-421. (10.1063/1.1593818)
• Smowton, P. M. et al. 2003. Optimization of 635-nm tensile strained GaInP laser diodes. IEEE Journal of Selected Topics in Quantum Electronics 9 (5), pp.1246-1251. (10.1109/JSTQE.2003.819488)
• Sobiesierski, A. et al. 2003. Coupled multi-quantum well 650-nm emitting GaInP laser diodes. Presented at: Novel In-Plane Semiconductor Lasers II San Jose, CA, USA 27-29 January, 2003. Novel In-Plane Semiconductor Lasers II. SPIE Proceeedings Vol. 4995. SPIE. , pp.152-159. (10.1117/12.475785)

2002

• Groom, K. M. et al., 2002. Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement. Applied Physics Letters 81 (1), pp.1-3. (10.1063/1.1489702)
• Lewis, G. M. et al. 2002. Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes. Applied Physics Letters 80 (19), pp.3488-3490. (10.1063/1.1476396)
• Lewis, G. M. et al. 2002. Measurement of true spontaneous emission spectra from the facet of diode laser structures. Applied Physics Letters 80 (1), pp.1-3. (10.1063/1.1428774)
• Lewis, G. M. et al. 2002. Gain characteristics of GaInP quantum well laser structures. Presented at: Novel In-Plane Semiconductor Lasers San Jose, CA, USA 21-23 January 2002. Published in: Meyer, J. R. and Gmachl, C. F. eds. Novel In-Plane Semiconductor Lasers. Proceedings of SPIE Vol. 4651. Bellingham, WA: SPIE(10.1117/12.467933)
• Matthews, D. R. et al. 2002. Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers. Applied Physics Letters 81 (26), pp.4904-4906. (10.1063/1.1532549)
• Smowton, P. M. et al. 2002. Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers. Applied Physics Letters 81 (17), pp.3251-3253. (10.1063/1.1516236)
• Smowton, P. M. et al. 2002. The effect of cladding layer thickness on large optical cavity 650-nm lasers. IEEE Journal of Quantum Electronics 38 (3), pp.285-290. (10.1109/3.985570)
• Teng, K. S. et al., 2002. An investigation of multi-quantum barriers for band offset engineering in AlGaInP/GaInP lasers. Applied Surface Science 190 (1-4), pp.284-287. (10.1016/S0169-4332(01)00869-8)

2001

• Groom, K. M. et al., 2001. Optical spectroscopic study of carrier processes in self-assembled In(Ga)As-Ga(Al)As quantum dot lasers. Physica Status Solidi B Basic Research 224 (1), pp.123-127. (10.1002/1521-3951(200103)224:1<123::AID-PSSB123>3.0.CO;2-F)
• Herrmann, E. et al., 2001. Performance of lasers containing three, five and seven layers of quantum dots. IEE Proceedings Optoelectronics 148 (5-6), pp.238-242. (10.1049/ip-opt:20010745)
• Ivanov, A. L. et al., 2001. Long-range interface-photon-mediated interactions between self-assembled quantum dots. Physica Status Solidi B Basic Research 224 (3), pp.781-786. (10.1002/(SICI)1521-3951(200104)224:3<781::AID-PSSB781>3.0.CO;2-9)
• Lewis, G. M. et al. 2001. Measurement of spontaneous emission spectra of diode laser structures. Presented at: LEOS 2001: The 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2001 San Diego, CA, USA 12-13 November 2001. LEOS 2001: The 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2001. Los Alamitos, CA: IEEE. , pp.655-656. (10.1109/LEOS.2001.968984)
• Ning, Y. et al., 2001. Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser. Presented at: 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001 22-25 October 2001. Proceedings: 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001. Vol. 2.Los Alamitos, CA: IEEE. , pp.1249-1251. (10.1109/ICSICT.2001.982126)
• Ning, Y. Q. et al., 2001. Farfield characteristics of InGaAs/GaAs quantum dots laser. Presented at: Semiconductor Optoelectronic Device Manufacturing and Applications Nanjing, China 7 November 2001. Published in: Chen, D. et al., Semiconductor Optoelectronic Device Manufacturing and Applications, Nanjing, China, 7 November 2001. Proceedings of SPIE Vol. 4602. Bellingham, WA: SPIE. , pp.106-109. (10.1117/12.445712)
• Smowton, P. M. 2001. Editorial Semiconductor Optoelectronics. IEE Proceedings Optoelectronics 148 (5-6), pp.219. (10.1049/ip-opt:20010858)
• Smowton, P. M. et al. 2001. Comparison of experimental and theoretical optical properties of GaInP lasers. Presented at: Physics and Simulation of Optoelectronic Devices IX San Jose, CA, USA 22-26 January 2001. Published in: Arakawa, Y. , Blood, P. and Osinski, M. eds. Physics and Simulation of Optoelectronic Devices IX. Proceedings of SPIE Vol. 4283. Bellingham, WA: SPIE. , pp.203-214. (10.1117/12.432567)
• Smowton, P. M. et al. 2001. Optical mode loss and gain of multiple-layer quantum-dot lasers. Applied Physics Letters 78 (18), pp.2629-2631. (10.1063/1.1366652)
• Smowton, P. M. et al. 2001. Optical loss in large optical cavity 650 nm lasers [Letter]. Semiconductor Science and Technology 16 (10), pp.L72-L75. (10.1088/0268-1242/16/10/104)
• Summers, H. D. et al., 2001. Spatially and spectrally resolved measurement of optical loss in InGaN laser structures. Journal of Crystal Growth 230 (3-4), pp.517-521. (10.1016/S0022-0248(01)01284-2)
• Summers, H. D. et al. 2001. Thermodynamic balance in quantum dot lasers. Semiconductor Science and Technology 16 (3), pp.140-143. (10.1088/0268-1242/16/3/303)
• Thomson, J. D. et al. 2001. Temperature dependence of the lasing wavelength of InGaAs quantum dot lasers. Journal of Applied Physics 90 (9), pp.4859-4861. (10.1063/1.1402666)
• Yin, M. et al., 2001. S-shaped negative differential resistance in 650 nm quantum well laser diodes. Solid-State Electronics 45 (3), pp.447-452. (10.1016/S0038-1101(01)00018-1)

2000

• Herrmann, E. et al., 2000. Modal gain and internal optical mode loss of a quantum dot laser. Applied Physics Letters 77 (2), pp.163-165. (10.1063/1.126911)
• Patane, A. et al., 2000. Experimental studies of the multimode spectral emission in quantum dot lasers. Journal of Applied Physics 87 (4), pp.1943-1946. (10.1063/1.372117)
• Patane, A. et al., 2000. (InGa)As/(AlGa)As self-assembled quantum dots: Optical properties and laser applications. Presented at: 26th International Symposium on Compound Semiconductors Berlin, Germany 23-26th August 1999. Published in: Ploog, K. and Weimann, G. eds. Compound Semiconductors 1999: Proceedings of the 26th International Symposium on Compound Semiconductors, 23-26th August 1999, Berlin, Germany. Institute of Physics Conference Series Vol. 166. London: Taylor & Francis. , pp.247-250.
• Smowton, P. M. , Blood, P. and Chow, W. W. 2000. Comparison of experimental and theoretical gain-current relations in GaInP quantum well lasers. Applied Physics Letters 76 (12), pp.1522-1524. (10.1063/1.126083)
• Smowton, P. M. et al. 2000. Extraction of non-radiative and carrier leakage losses in GaInP lasers through comparison of experimental and theoretical optical properties. Presented at: 2000 IEEE 17th International Semiconductor Laser Conference Monterey, CA, USA 25 - 28 September 2000. 2000 IEEE 17th International Semiconductor Laser Conference, 2000: Conference Digest. Los Alamitos, CA: IEEE. , pp.121-122. (10.1109/ISLC.2000.882318)
• Thomson, J. D. et al. 2000. Intrinsic performance of InGaAs/GaAs quantum dot lasers. Presented at: LEOS 2000: 13th Annual Meeting: IEEE Lasers and Electro-Optics Society: 2000 Annual Meeting Rio Grande, Puerto Rico 15-16 November 2000. LEOS 2000: 13th Annual Meeting IEEE Lasers and Electro-Optics Society. Vol. 2.Los Alamitos, CA: IEEE. , pp.308-309. (10.1109/LEOS.2000.890801)
• Thomson, J. D. et al. 2000. Measurement of optical gain and Fermi level separation in semiconductor structures. Presented at: Physics and Simulation of Optoelectronic Devices VIII San Jose, CA, USA 24-28 January 2000. Published in: Binder, R. H. , Blood, P. and Osinski, M. eds. Physics and Simulation of Optoelectronic Devices VIII. Proceedings of SPIE Vol. 3944. Bellingham, WA: SPIE. , pp.201-208. (10.1117/12.391422)
• Thomson, J. D. et al. 2000. Temperature dependence of the wavelength of quantum dot lasers. Presented at: 2000 IEEE 17th International Semiconductor Laser Conference Monterey, CA, USA 25 - 28 September 2000. 2000 IEEE 17th International Semiconductor Laser Conference, 2000: Conference Digest. Los Alamitos, CA: IEEE. , pp.135-136. (10.1109/ISLC.2000.882324)
• Wood, S. A. et al., 2000. Minority carrier effects in GaInP laser diodes. IEEE Journal of Quantum Electronics 36 (6), pp.742-750. (10.1109/3.845732)

1999

• Blood, P. et al. 1999. Carrier transport in AlGaInP laser structures. Presented at: Physics and Simulation of Optoelectronic Devices VII San Jose, CA, USA 25-29 January 1999. Published in: Blood, P. , Ishibashi, A. and Osinski, M. eds. Physics and Simulation of Optoelectronic Devices VII. Proceedings of SPIE Vol. 3625. Bellingham, WA: SPIE. , pp.476-484. (10.1117/12.356906)
• Smowton, P. M. et al. 1999. Spectral analysis of InGaAs/GaAs quantum-dot lasers. Applied Physics Letters 75 (15), pp.2169-2171. (10.1063/1.124954)
• Smowton, P. M. et al. 1999. 650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers. IEEE Journal of Selected Topics in Quantum Electronics 5 (3), pp.735-739. (10.1109/2944.788444)
• Summers, H. D. et al. 1999. Experimental analysis of self-pulsation in 650-nm-wavelength AlGaInP laser diodes with epitaxial absorbing layers. IEEE Journal of Selected Topics in Quantum Electronics 5 (3), pp.745-749. (10.1109/2944.788446)
• Thomson, J. D. et al. 1999. Determination of single-pass optical gain and internal loss using a multisection device. Applied Physics Letters 75 (17), pp.2527-2529. (10.1063/1.125066)
• Wood, S. A. et al., 1999. Electron transport in AlGaInP quantum well lasers. Applied Physics Letters 75 (12), pp.1748-1750. (10.1063/1.124807)
• Wood, S. A. et al., 1999. Direct monitoring of thermally activated leakage current in AlGaInP laser diodes. Applied Physics Letters 74 (17), pp.2540-2542. (10.1063/1.123891)

1998

• Blood, P. , Foulger, D. L. and Smowton, P. M. 1998. Modelling quantum well laser diode structures. Presented at: NATO Advanced Study Institute on Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices Sozopol, Bulgaria 18-28 September 1996. Published in: Balkanski, M. and Andreev, N. eds. Advanced Electronic Technologies and Systems Based on Low-Dimensional Quantum Devices: Proceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, 18-28 September 1996. Nato Science Partnership Subseries: 3 Vol. 42. Dordrecht: Kluwer. , pp.77-89.
• Mogensen, P. C. et al., 1998. The effect of high compressive strain on the operation of AlGaInP quantum-well lasers. IEEE Journal of Quantum Electronics 34 (9), pp.1652-1659. (10.1109/3.709581)
• Mogensen, P. C. et al., 1998. The impact of structural non-uniformity on the operation of AlGaInP lasers at high compressive strain. Presented at: Physics and Simulation of Optoelectronic Devices VI San Jose, CA, USA 26-30 January 1998. Published in: Osinski, M. , Blood, P. and Ishibashi, A. eds. Physics and Simulation of Optoelectronic Devices VI. Proceedings of SPIE Vol. 3283. Bellingham, WA: SPIE. , pp.432-443. (10.1117/12.316694)

1997

• Blood, P. et al. 1997. Simulation of GaInP laser diode structures. Presented at: Physics and Simulation of Optoelectronic Devices V San Jose, CA, USA 10-14 February 1997. Published in: Osinski, M. and Chow, W. W. eds. Proceedings of Physics and Simulation of Optoelectronic Devices V, 10-14 February, 1997, San Jose, California, USA. Proceedings of SPIE Vol. 2994. Bellingham, WA: SPIE. , pp.736-746. (10.1117/12.275623)
• Chow, W. W. et al., 1997. Comparison of experimental and theoretical GaInP quantum well gain spectra. Applied Physics Letters 71 (2), pp.157-159. (10.1063/1.119489)
• Cooper, C. et al., 1997. New approach to blue-shifting asymmetric quantum wells. Presented at: In-plane Semiconductor Lasers: From Ultraviolet to Midinfrared San Jose, CA, USA 10-13 February 1997. Published in: Choi, H. K. and Zory, P. S. eds. Proceedings of In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, 10-13 February 1997, San Jose, California. Proceedings of SPIE Vol. 3001. Bellingham, WA: SPIE. , pp.184-191. (10.1117/12.273787)
• Foulger, D. L. et al., 1997. Self-consistent simulation of (AlGa)InP/GaInP visible lasers. IEE Proceedings Optoelectronics 144 (1), pp.23-29. (10.1049/ip-opt:19971071)
• Mogensen, P. C. et al., 1997. The impact of structural non-uniformity on the operation of (AlyGa1-y)(x)In1-xP quantum well lasers at high strain. Presented at: Royal Microscopical Society Conference 1997 Oxford, UK 7-10 April 1997. Published in: Cullis, A. G. and Hutchinson, J. L. eds. Microscopy of Semiconducting Materials 1997: Proceedings of the Royal Microscopical Society Conference held at Oxford University, 7-10 April 1997. Institute of Physics Conference Series Vol. 157. London: Taylor & Francis. , pp.543-546.
• Mogensen, P. C. , Smowton, P. M. and Blood, P. 1997. Measurement of optical mode loss in visible emitting lasers. Applied Physics Letters 71 (14), pp.1975-1977. (10.1063/1.119759)
• Smowton, P. M. and Blood, P. 1997. Fermi level pinning and differential efficiency in GaInP quantum well laser diodes. Applied Physics Letters 70 (9), pp.1073-1075. (10.1063/1.118488)
• Smowton, P. M. and Blood, P. 1997. On the determination of internal optical mode loss of semiconductor lasers. Applied Physics Letters 70 (18), pp.2365-2367. (10.1063/1.118875)
• Smowton, P. M. and Blood, P. 1997. The differential efficiency of quantum-well lasers. IEEE Journal of Selected Topics in Quantum Electronics 3 (2), pp.491-498. (10.1109/2944.605699)
• Smowton, P. M. and Blood, P. 1997. Visible emitting (AlGa)InP laser diodes. In: Manasreh, M. O. ed. Strained-layer quantum wells and their applications. Optoelectronic properties of semiconductors and superlattices Vol. 4.Amsterdam: Gordon and Breach. , pp.431-487.
• Smowton, P. M. et al. 1997. AlxGayIn1-x-yAs/AlGaAs quantum well lasers at 670-750nm. Presented at: In-plane Semiconductor Lasers: From Ultraviolet to Midinfrared San Jose, CA, USA 10-13 February 1997. Published in: Choi, H. K. and Zory, P. S. eds. In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared. Proceedings of SPIE Vol. 3001. Bellingham, WA: SPIE. , pp.153-162. (10.1117/12.273783)

1996

• Blood, P. et al. 1996. Critical issues in laser diode calculations. Presented at: Physics and Simulation of Optoelectronic Devices IV 1 May 1996. Published in: Chow, W. W. and Osinski, M. eds. Proceedings of Physics and Simulation of Optoelectronic Devices IV, 1 May 1996. Proceedings of SPIE Vol. 2693. Bellingham, WA: SPIE. , pp.444-454. (10.1117/12.238980)
• Blood, P. , Smowton, P. M. and Foulger, D. 1996. Carrier distributions and leakage in (AlGa)InP visible emitting lasers. Presented at: Laser Diodes and Applications II 12 April 1996. Published in: Linden, K. J. and Akkapeddi, P. R. eds. Proceedings of Laser Diodes and Applications II, 12 April 1996. Proceedings of SPIE Vol. 2682. Bellingham, WA: SPIE. , pp.98-107. (10.1117/12.237645)
• Mogensen, P. C. , Smowton, P. M. and Blood, P. 1996. Highly strained GaxIn1-xP/(AlyGa1-y)(0.51)In0.49P quantum well lasers. Presented at: 15th IEEE International Semiconductor Laser Conference Haifa, Israel 13-18 October 1996. 15th IEEE International Semiconductor Laser Conference, 1996. Los Alamitos, CA: IEEE. , pp.97-98. (10.1109/ISLC.1996.553765)
• Rees, P. et al., 1996. Calculated threshold currents of nitride- and phosphide-based quantum-well lasers. IEEE Photonics Technology Letters 8 (2), pp.197-199. (10.1109/68.484239)
• Smowton, P. M. and Blood, P. 1996. The differential efficiency of quantum well lasers. Presented at: 15th IEEE International Semiconductor Laser Conference Haifa, Israel 13-18 October 1996. 15th IEEE International Semiconductor Laser Conference, 1996. Los Alamitos, CA: IEEE. , pp.51-52. (10.1109/ISLC.1996.553743)

1995

• Blood, P. and Smowton, P. M. 1995. Strain dependence of threshold current in fixed-wavelength GaInP laser diodes. IEEE Journal of Selected Topics in Quantum Electronics 1 (2), pp.707-711. (10.1109/2944.401260)
• Rees, P. et al., 1995. Gain characteristics of GaN quantum wells including many body effects. Electronics Letters 31 (14), pp.1149-1150. (10.1049/el:19950826)
• Smowton, P. M. and Blood, P. 1995. GaInP-(AlyGa1-y)InP 670 nm quantum-well lasers for high-temperature operation. IEEE Journal of Quantum Electronics 31 (12), pp.2159-2164. (10.1109/3.477741)
• Smowton, P. M. and Blood, P. 1995. Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers. Applied Physics Letters 67 (9), pp.1265-1267. (10.1063/1.114392)
• Smowton, P. M. et al. 1995. Role of sublinear gain-current relationship in compressive and tensile strained 630 nm GaInP lasers. International Journal of Optoelectronics 10 (5), pp.383-391.

1994

• Blood, P. and Smowton, P. M. 1994. Recombination, gain and carrier leakage in (AlGa)InP visible lasers. Presented at: LEOS '94: IEEE Lasers and Electro-Optics Society 1994 7th Annual Meeting Boston, MA, USA 31 October - 3 November 1994. LEOS '94 Conference Proceedings: IEEE Lasers and Electro-Optics Society Annual Meeting 1994. Vol. 1.Los Alamitos, CA: IEEE. , pp.321-322. (10.1109/LEOS.1994.587023)
• Smowton, P. M. et al. 1994. Optimisation of 670 nm strained-quantum-well laser diodes for high-temperature operation. IEE Proceedings Optoelectronics 141 (2), pp.136-140. (10.1049/ip-opt:19949992)
• Smowton, P. M. et al. 1994. Optimization of 670-nm strained quantum well laser diodes. Presented at: Laser diode technology and applications VI Los Angeles, CA, USA 25-27 January 1994. Published in: Chen, P. C. , Johnson, L. A. and Temkin, H. eds. Proceedings of Laser Diode Technology and Applications VI, Los Angeles, CA, USA, 25-27 January 1994. Proceedings of SPIE Vol. 2148. Bellingham, WA: SPIE. , pp.189-200. (10.1117/12.176614)
• Smowton, P. M. et al. 1994. Threshold current of 670-nm AlGaInP strained quantum well lasers. IEEE Photonics Technology Letters 6 (8), pp.910-912. (10.1109/68.313049)

1992

• Smowton, P. M. , Thomas, B. and Pratt, R. H. 1992. Frequency stabilisation of visible output laser diodes. IEE Proceedings J Optoelectronics 139 (1), pp.75-78.

1990

• Cho, L. A. L. S. , Smowton, P. M. and Thomas, B. 1990. Spectral gain measurements for semiconductor laser diodes. IEE Proceedings J Optoelectronics 137 (1), pp.64-68.

1986

• Blood, P. et al. 1986. Emission wavelength of AlGaAs‐GaAs multiple quantum well lasers. Applied Physics Letters 48 (17), pp.1111-1113. (10.1063/1.96613)