Professor Tao Wang
- Available for postgraduate supervision
Teams and roles for Tao Wang
Overview
He is a Professor and the IQE Chair in Semiconductors. Prior to joining his current institution, he served as Professor and Chair in Semiconductor Materials and Devices at the University of Sheffield since 2011, where he founded and directed the Centre for GaN Materials and Devices. His research breakthroughs have been widely featured in newspaper and magazines.
To date, he has led or co-led 40 competitively funded research projects in the field of III-nitride materials and devices. He has > 550 publications included journal papers, book chapters, conference papers/presentations and patents. He has delivered ~60 planary/invited talks at international conferences. He has successfully supervised 31 PhD students to completion (26 as principal supervisor) and 22 postdoctoral research associates as a principal supervisor. One of his PhD students under his principal supervison was awarded “Year 2009 Chinese Government Award for Outstanding Chinese Students Abroad”.
He has established a strong track record of translating world-leading research into commercial innovation. So far, he has co-founded three university spin-out companies in the UK. His pioneering epitaxial technologies for achieving monolithic on-chip integration of III-nitride micro-LEDs were successfully transferred to the semiconductor industry in 2022, creating major scientific, technological, and economic impact. His pioneering research on the MOVPE growth of semi-polar and non-polar GaN on highly lattice-mismatched substrates was recognised with the 2015 Royal Society Emerging Technology Award.
Publication
2026
- Li, J. et al., 2026. Ultra-flexible vacuum ultraviolet photodetector based on hexagonal boron nitride films grown by LPCVD. ACS Applied Optical Materials (10.1021/acsaom.6c00393)
- Wang, T. 2026. Prospect of developing III-nitride microLED technologies for micro-displays, visible light communications and artificial intelligence. Progress in Quantum Electronics 108 100634. (10.1016/j.pquantelec.2026.100634)
- Chen, Y. et al., 2026. Enhanced flexible vacuum-ultraviolet photodetectors based on hexagonal boron nitride nanosheets via Al nanoparticles. Nanomaterials 16 (3) 187. (10.3390/nano16030187)
2025
- Fang, W. et al., 2025. 16×1 linear vacuum ultraviolet photodetector array based on hexagonal boron nitride film. Photonics 12 (12) 1216. (10.3390/photonics12121216)
- Zhang, Z. et al., 2025. Self-powered vacuum ultraviolet photodetector based on a BAlN/Si/BAlN double heterojunction. Optics Letters 50 (17), pp.5370-5373. (10.1364/ol.568977)
- Chen, R. et al., 2025. Deep‐UV light‐emitting based on the hBN:S/hBN: Mg homojunction. Advanced Science 12 (18) 2414353. (10.1002/advs.202414353)
- Bruckbauer, J. et al., 2025. Strain and luminescence properties of hexagonal hillocks in N-polar GaN. Journal of Applied Physics 137 (13) 135705. (10.1063/5.0259840)
- Li, Q. et al., 2025. The effect of Al2O3 nanoparticles on hexagonal boron nitride films resulting from high-temperature annealing. Nanomaterials 15 (7) 484. (10.3390/nano15070484)
2023
- XiangWei, W. et al., 2023. Clinical and functional consequences of GRIA variants in patients with neurological diseases. Cellular and Molecular Life Sciences 80 (11) 345. (10.1007/s00018-023-04991-6)
Articles
- Li, J. et al., 2026. Ultra-flexible vacuum ultraviolet photodetector based on hexagonal boron nitride films grown by LPCVD. ACS Applied Optical Materials (10.1021/acsaom.6c00393)
- Wang, T. 2026. Prospect of developing III-nitride microLED technologies for micro-displays, visible light communications and artificial intelligence. Progress in Quantum Electronics 108 100634. (10.1016/j.pquantelec.2026.100634)
- Chen, Y. et al., 2026. Enhanced flexible vacuum-ultraviolet photodetectors based on hexagonal boron nitride nanosheets via Al nanoparticles. Nanomaterials 16 (3) 187. (10.3390/nano16030187)
- Fang, W. et al., 2025. 16×1 linear vacuum ultraviolet photodetector array based on hexagonal boron nitride film. Photonics 12 (12) 1216. (10.3390/photonics12121216)
- Zhang, Z. et al., 2025. Self-powered vacuum ultraviolet photodetector based on a BAlN/Si/BAlN double heterojunction. Optics Letters 50 (17), pp.5370-5373. (10.1364/ol.568977)
- Chen, R. et al., 2025. Deep‐UV light‐emitting based on the hBN:S/hBN: Mg homojunction. Advanced Science 12 (18) 2414353. (10.1002/advs.202414353)
- Bruckbauer, J. et al., 2025. Strain and luminescence properties of hexagonal hillocks in N-polar GaN. Journal of Applied Physics 137 (13) 135705. (10.1063/5.0259840)
- Li, Q. et al., 2025. The effect of Al2O3 nanoparticles on hexagonal boron nitride films resulting from high-temperature annealing. Nanomaterials 15 (7) 484. (10.3390/nano15070484)
- XiangWei, W. et al., 2023. Clinical and functional consequences of GRIA variants in patients with neurological diseases. Cellular and Molecular Life Sciences 80 (11) 345. (10.1007/s00018-023-04991-6)
Research
- MOVPE growth of polar, semipolar and non-polar III-nitrides (GaN, AlN, InN and their alloys) on large lattice-mismatched substrates, such as sapphire, silicon, SiC and diamond
- Advanced MOVPE overgrowth of III-nitrides on patterned substrates
- Nano/micro-fabrication technologies of III-nitrides: nano/micro-patterning of substrates for advanced epitaxial overgrowth; nano-rod array emitters; single nano-rod emitters; plasmonic nanolaser; micro-/nano-cavity; photonic crystal structures
- III-nitride micro-emitters for AR/VR and Li-Fi
- Monolithic on-chip integration of III-nitride optoelectronics
- Solar-power hydrogen generation, solar cells, etc
- Hybrid III-nitrides/organic/2D materials for optoelectronics including flexible optoelectronics
- Boron nitride based opto-electronics
Teaching
PX3242 Semiconductor Devices and Applications
Contact Details
+44 29225 14760
Queen's Buildings - North Building, Room N/1.27, 5 The Parade, Newport Road, Cardiff, CF24 3AA