Professor Tao Wang
Professor
Institute of Compound Semiconductors
Condensed Matter and Photonics Group
- Available for postgraduate supervision
Overview
Professor Tao Wang currently holds a Chair in Semiconductors. Before that, he had been a Professor as a Chair in Semiconductor Materials and Devices at Sheffield since May 2011 and was the Founding Director of Centre for GaN Materials and Devices. His innovation researches are regularly highlghted by newspaper and magazines.
So far, he has ~550 publications included journal papers. conference papers/presentations and patents. He has supervised 31 successfully graduated PhD students (26 as a principal supervisor) and 22 post-doctoral Research Associates (PDRAs) as a principal supervisor. One of his PhD students under his principal supervison was awarded “Year 2009 Chinese Government Award for Outstanding Chinese Students Abroad”.
The advanced epitaxay technologies he developed to achieve monolithic on-chip integration of III-nitride LEDs on a microscale were sucessfully transferred to the semiconductor industry in 2022, making large social and economic impacts. The pioneering work on deveoping MOVPE growth of semi-polar and non-polar GaN on large lattice-mismatched substrates generated 10 IP patents, leading to Royal Society Emerging Technology Award in 2015.
Publication
2025
- Bruckbauer, J. et al. 2025. Strain and luminescence properties of hexagonal hillocks in N-polar GaN. Journal of Applied Physics 137(13), article number: 135705. (10.1063/5.0259840)
- Li, Q. et al. 2025. The effect of Al2O3 nanoparticles on hexagonal boron nitride films resulting from high-temperature annealing. Nanomaterials 15(7), article number: 484. (10.3390/nano15070484)
- Chen, R. et al. 2025. Deep‐UV light‐emitting based on the hBN:S/hBN: Mg homojunction. Advanced Science (10.1002/advs.202414353)
2023
- XiangWei, W. et al. 2023. Clinical and functional consequences of GRIA variants in patients with neurological diseases. Cellular and Molecular Life Sciences 80(11), article number: 345. (10.1007/s00018-023-04991-6)
Articles
- Bruckbauer, J. et al. 2025. Strain and luminescence properties of hexagonal hillocks in N-polar GaN. Journal of Applied Physics 137(13), article number: 135705. (10.1063/5.0259840)
- Li, Q. et al. 2025. The effect of Al2O3 nanoparticles on hexagonal boron nitride films resulting from high-temperature annealing. Nanomaterials 15(7), article number: 484. (10.3390/nano15070484)
- Chen, R. et al. 2025. Deep‐UV light‐emitting based on the hBN:S/hBN: Mg homojunction. Advanced Science (10.1002/advs.202414353)
- XiangWei, W. et al. 2023. Clinical and functional consequences of GRIA variants in patients with neurological diseases. Cellular and Molecular Life Sciences 80(11), article number: 345. (10.1007/s00018-023-04991-6)
Research
- MOVPE growth of polar, semipolar and non-polar III-nitrides (GaN, AlN, InN and their alloys) on large lattice-mismatched substrates, such as sapphire, silicon, SiC and diamond
- Advanced MOVPE overgrowth of III-nitrides on patterned substrates
- Nano/micro-fabrication technologies of III-nitrides: nano/micro-patterning of substrates for advanced epitaxial overgrowth; nano-rod array emitters; single nano-rod emitters; plasmonic nanolaser; micro-/nano-cavity; photonic crystal structures
- III-nitride micro-emitters for AR/VR and Li-Fi
- Monolithic on-chip integration of III-nitride optoelectronics
- Solar-power hydrogen generation, solar cells, etc
- Hybrid III-nitrides/organic/2D materials for optoelectronics including flexible optoelectronics
- Boron nitride based opto-electronics
Contact Details
+44 29225 14760
Queen's Buildings - North Building, Room N/1.27, 5 The Parade, Newport Road, Cardiff, CF24 3AA