![Parco Wong](https://profiles-cardiff.imgix.net/attachments/4609?w=200&h=200&auto=format&crop=faces&fit=crop&q=90")
Mr Parco Wong
Teams and roles for Parco Wong
Process Engineer
ICS Process Engineer
ICS Process Engineer
Publication
2025
- Yan, Z. et al. 2025. MOCVD-grown InAs/InP quantum dot lasers with low threshold current. Optics Express 33(15), pp. 31195-31203. (10.1364/OE.568365)
- Li, J., Zhu, R., Wong, K. and May Lau, K. 2025. Fully-vertical GaN-on-SiC Trench MOSFETs. IEEE Electron Device Letters 46(2), pp. 282-285. (10.1109/LED.2024.3520200)
2023
- Qi, L., Li, P., Zhang, X. and Wong, K. M. 2023. Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration. Light: Science & Applications 12, article number: 258. (10.1038/s41377-023-01298-w)
2022
- Luo, W., Lin, Q., Huang, J., Wong, K. M., Lin, L. and Lau, K. M. 2022. InP/GaAsP DWELL lasers grown on (001) Si emitting at 740 nm. Presented at: 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 16-19 October 2022Proceedings of 28th International Semiconductor Laser Conference. IEEE, (10.23919/islc52947.2022.9943341)
2015
- Liu, Z., Chong, W. C., Wong, K. M. and Lau, K. M. 2015. GaN-based LED micro-displays for wearable applications. Microelectronic Engineering 148, pp. 98-103. (10.1016/j.mee.2015.09.007)
2014
- Zou, X., Wong, K. M., Chong, W. C., Ma, J. and Lau, K. M. 2014. High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer. Physica Status Solidi (C) Current Topics in Solid State Physics 11(3-4), pp. 730-733. (10.1002/pssc.201300506)
- Li, M., Wang, Y., Wong, K. M. and Lau, K. 2014. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition. Chinese Physics B 23(3), article number: 38403. (10.1088/1674-1056/23/3/038403)
2013
- Liu Z, Z. J., Chong, W. C., Wong, K. M., Tam, K. H. and Kei, M. L. 2013. A novel BLU-free full-color LED projector using LED on silicon micro-displays. IEEE Photonics Technology Letters 25(23), pp. 2267-2270. (10.1109/LPT.2013.2285229)
- Liu, Z. J., Chong, W. C., Wong, K. M. and Lau, K. M. 2013. GaN based light-emitting diode on silicon (LEDoS) micro-displays for BLU-free full-color projector application. Presented at: 2013 IEEE Photonics Conference, IPC 2013, Bellevue, WA, 08-12 September 20132013 IEEE Photonics Conference, IPC 2013. IEEE pp. 171-172., (10.1109/IPCon.2013.6656489)
- Zou, X., Wong, K. M., Zhu, X., Chong, W. C., Ma, J. and Lau, K. M. 2013. High-performance green and yellow LEDs grown on SiO2 nanorod patterned GaN/Si templates. IEEE Electron Device Letters 34(7), pp. 903-905. (10.1109/LED.2013.2260126)
- Chong, W. C., Wong, K. M., Liu, Z. J. and Lau, K. M. 2013. A novel full-color 3LED projection system using R-G-B light emitting diodes on silicon (LEDoS) micro-displays. Presented at: SID International Symposium, June 2013SID Symposium Digest of Technical Papers, Vol. 44. Vol. 1. Blackwell Publishing Ltd pp. 838-841., (10.1002/j.2168-0159.2013.tb06348.x)
- Liu, Z. J., Chong, W. C., Wong, K. M., Keung, C. W. and Lau, K. M. 2013. Investigation of forward voltage uniformity in monolithic light-emitting diode arrays. IEEE Photonics Technology Letters 25(13), pp. 1290-1293. (10.1109/LPT.2013.2263223)
- Ma, J., Zhu, X., Wong, K. M., Zou, X. and Lau, K. M. 2013. Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers. Journal of Crystal Growth 370, pp. 265-268. (10.1016/j.jcrysgro.2012.10.028)
- Liu, Z. J., Chong, W. C., Wong, K. M. and Lau, K. M. 2013. 360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (ledos) micro-displays. IEEE/OSA Journal of Display Technology 9(8), pp. 678-682. (10.1109/JDT.2013.2256107)
2012
- Liu, Z. J., Wong, K. M., Chong, W. C. and Lau, K. M. 2012. Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays. Presented at: 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, 15 - 20 May 201149th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, Vol. 42. Vol. 1. SID pp. 1215-1218., (10.1889/1.3621049)
- Huang, T., Wong, K. M., Li, M., Zhu, X. and Lau, K. M. 2012. Effect of post-gate RTA on leakage current (I off) in GaN MOSHEMTs. Physica Status Solidi (C) 9(3-4), pp. 919-922. (10.1002/pssc.201100444)
- Huang, T., Zhu, X., Wong, K. M. and Lau, K. M. 2012. Low-Leakage-Current AlN/GaN MOSHFETs using Al2O3 for Increased 2DEG. IEEE Electron Device Letters 33(2), pp. 212-214. (10.1109/LED.2011.2176909)
2011
- Lee, C. M., Wong, K. M., Peng, C. and Lau, K. M. 2011. GaN-based lamb-wave mass-sensors on silicon substrates. Presented at: SENSORS 2010, 9th IEEE Sensors Conference, 2010, Waikoloa, HI, 01 - 04 November 2010 Presented at Kenny, T. and Fedder, G. eds.Proceedings of IEEE Sensors. IEEE pp. 2008-2011., (10.1109/ICSENS.2010.5689946)
2009
- Liu, Z. J., Wong, K. M., Tang, C. W. and Lau, K. M. 2009. GaN-based monolithic LED micro-arrays. Presented at: 2009 14th OptoElectronics and Communications Conference, Hong Kong, 13-17 July 20092009 14th OptoElectronics and Communications Conference. IEEE, (10.1109/OECC.2009.5213302)
Articles
- Yan, Z. et al. 2025. MOCVD-grown InAs/InP quantum dot lasers with low threshold current. Optics Express 33(15), pp. 31195-31203. (10.1364/OE.568365)
- Li, J., Zhu, R., Wong, K. and May Lau, K. 2025. Fully-vertical GaN-on-SiC Trench MOSFETs. IEEE Electron Device Letters 46(2), pp. 282-285. (10.1109/LED.2024.3520200)
- Qi, L., Li, P., Zhang, X. and Wong, K. M. 2023. Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration. Light: Science & Applications 12, article number: 258. (10.1038/s41377-023-01298-w)
- Liu, Z., Chong, W. C., Wong, K. M. and Lau, K. M. 2015. GaN-based LED micro-displays for wearable applications. Microelectronic Engineering 148, pp. 98-103. (10.1016/j.mee.2015.09.007)
- Zou, X., Wong, K. M., Chong, W. C., Ma, J. and Lau, K. M. 2014. High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer. Physica Status Solidi (C) Current Topics in Solid State Physics 11(3-4), pp. 730-733. (10.1002/pssc.201300506)
- Li, M., Wang, Y., Wong, K. M. and Lau, K. 2014. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition. Chinese Physics B 23(3), article number: 38403. (10.1088/1674-1056/23/3/038403)
- Liu Z, Z. J., Chong, W. C., Wong, K. M., Tam, K. H. and Kei, M. L. 2013. A novel BLU-free full-color LED projector using LED on silicon micro-displays. IEEE Photonics Technology Letters 25(23), pp. 2267-2270. (10.1109/LPT.2013.2285229)
- Zou, X., Wong, K. M., Zhu, X., Chong, W. C., Ma, J. and Lau, K. M. 2013. High-performance green and yellow LEDs grown on SiO2 nanorod patterned GaN/Si templates. IEEE Electron Device Letters 34(7), pp. 903-905. (10.1109/LED.2013.2260126)
- Liu, Z. J., Chong, W. C., Wong, K. M., Keung, C. W. and Lau, K. M. 2013. Investigation of forward voltage uniformity in monolithic light-emitting diode arrays. IEEE Photonics Technology Letters 25(13), pp. 1290-1293. (10.1109/LPT.2013.2263223)
- Ma, J., Zhu, X., Wong, K. M., Zou, X. and Lau, K. M. 2013. Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers. Journal of Crystal Growth 370, pp. 265-268. (10.1016/j.jcrysgro.2012.10.028)
- Liu, Z. J., Chong, W. C., Wong, K. M. and Lau, K. M. 2013. 360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (ledos) micro-displays. IEEE/OSA Journal of Display Technology 9(8), pp. 678-682. (10.1109/JDT.2013.2256107)
- Huang, T., Wong, K. M., Li, M., Zhu, X. and Lau, K. M. 2012. Effect of post-gate RTA on leakage current (I off) in GaN MOSHEMTs. Physica Status Solidi (C) 9(3-4), pp. 919-922. (10.1002/pssc.201100444)
- Huang, T., Zhu, X., Wong, K. M. and Lau, K. M. 2012. Low-Leakage-Current AlN/GaN MOSHFETs using Al2O3 for Increased 2DEG. IEEE Electron Device Letters 33(2), pp. 212-214. (10.1109/LED.2011.2176909)
Conferences
- Luo, W., Lin, Q., Huang, J., Wong, K. M., Lin, L. and Lau, K. M. 2022. InP/GaAsP DWELL lasers grown on (001) Si emitting at 740 nm. Presented at: 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 16-19 October 2022Proceedings of 28th International Semiconductor Laser Conference. IEEE, (10.23919/islc52947.2022.9943341)
- Liu, Z. J., Chong, W. C., Wong, K. M. and Lau, K. M. 2013. GaN based light-emitting diode on silicon (LEDoS) micro-displays for BLU-free full-color projector application. Presented at: 2013 IEEE Photonics Conference, IPC 2013, Bellevue, WA, 08-12 September 20132013 IEEE Photonics Conference, IPC 2013. IEEE pp. 171-172., (10.1109/IPCon.2013.6656489)
- Chong, W. C., Wong, K. M., Liu, Z. J. and Lau, K. M. 2013. A novel full-color 3LED projection system using R-G-B light emitting diodes on silicon (LEDoS) micro-displays. Presented at: SID International Symposium, June 2013SID Symposium Digest of Technical Papers, Vol. 44. Vol. 1. Blackwell Publishing Ltd pp. 838-841., (10.1002/j.2168-0159.2013.tb06348.x)
- Liu, Z. J., Wong, K. M., Chong, W. C. and Lau, K. M. 2012. Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays. Presented at: 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, 15 - 20 May 201149th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, Vol. 42. Vol. 1. SID pp. 1215-1218., (10.1889/1.3621049)
- Lee, C. M., Wong, K. M., Peng, C. and Lau, K. M. 2011. GaN-based lamb-wave mass-sensors on silicon substrates. Presented at: SENSORS 2010, 9th IEEE Sensors Conference, 2010, Waikoloa, HI, 01 - 04 November 2010 Presented at Kenny, T. and Fedder, G. eds.Proceedings of IEEE Sensors. IEEE pp. 2008-2011., (10.1109/ICSENS.2010.5689946)
- Liu, Z. J., Wong, K. M., Tang, C. W. and Lau, K. M. 2009. GaN-based monolithic LED micro-arrays. Presented at: 2009 14th OptoElectronics and Communications Conference, Hong Kong, 13-17 July 20092009 14th OptoElectronics and Communications Conference. IEEE, (10.1109/OECC.2009.5213302)