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Mr Parco Wong
Teams and roles for Parco Wong
Process Engineer
ICS Process Engineer
ICS Process Engineer
Publication
2025
- Li, J. et al., 2025. Fully-vertical GaN-on-SiC Trench MOSFETs. IEEE Electron Device Letters 46 (2), pp.282-285. (10.1109/LED.2024.3520200)
- Yan, Z. et al. 2025. MOCVD-grown InAs/InP quantum dot lasers with low threshold current. Optics Express 33 (15), pp.31195-31203. (10.1364/OE.568365)
2023
- Qi, L. et al., 2023. Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration. Light: Science & Applications 12 258. (10.1038/s41377-023-01298-w)
2022
- Luo, W. et al., 2022. InP/GaAsP DWELL lasers grown on (001) Si emitting at 740 nm. Presented at: 28th International Semiconductor Laser Conference (ISLC) Matsue, Japan 16-19 October 2022. Proceedings of 28th International Semiconductor Laser Conference. IEEE(10.23919/islc52947.2022.9943341)
2015
- Liu, Z. et al., 2015. GaN-based LED micro-displays for wearable applications. Microelectronic Engineering 148 , pp.98-103. (10.1016/j.mee.2015.09.007)
2014
- Li, M. et al., 2014. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition. Chinese Physics B 23 (3) 038403. (10.1088/1674-1056/23/3/038403)
- Zou, X. et al., 2014. High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer. Physica Status Solidi (C) Current Topics in Solid State Physics 11 (3-4), pp.730-733. (10.1002/pssc.201300506)
2013
- Chong, W. C. et al., 2013. A novel full-color 3LED projection system using R-G-B light emitting diodes on silicon (LEDoS) micro-displays. Presented at: SID International Symposium June 2013. SID Symposium Digest of Technical Papers. Vol. 44.Vol. 1. Blackwell Publishing Ltd. , pp.838-841. (10.1002/j.2168-0159.2013.tb06348.x)
- Liu, Z. J. et al., 2013. 360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (ledos) micro-displays. IEEE/OSA Journal of Display Technology 9 (8), pp.678-682. (10.1109/JDT.2013.2256107)
- Liu, Z. J. et al., 2013. GaN based light-emitting diode on silicon (LEDoS) micro-displays for BLU-free full-color projector application. Presented at: 2013 IEEE Photonics Conference, IPC 2013 Bellevue, WA 08-12 September 2013. 2013 IEEE Photonics Conference, IPC 2013. IEEE. , pp.171-172. (10.1109/IPCon.2013.6656489)
- Liu, Z. J. et al., 2013. Investigation of forward voltage uniformity in monolithic light-emitting diode arrays. IEEE Photonics Technology Letters 25 (13), pp.1290-1293. (10.1109/LPT.2013.2263223)
- Liu Z, Z. J. et al., 2013. A novel BLU-free full-color LED projector using LED on silicon micro-displays. IEEE Photonics Technology Letters 25 (23), pp.2267-2270. (10.1109/LPT.2013.2285229)
- Ma, J. et al., 2013. Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers. Journal of Crystal Growth 370 , pp.265-268. (10.1016/j.jcrysgro.2012.10.028)
- Zou, X. et al., 2013. High-performance green and yellow LEDs grown on SiO2 nanorod patterned GaN/Si templates. IEEE Electron Device Letters 34 (7), pp.903-905. (10.1109/LED.2013.2260126)
2012
- Huang, T. et al., 2012. Effect of post-gate RTA on leakage current (I off) in GaN MOSHEMTs. Physica Status Solidi (C) 9 (3-4), pp.919-922. (10.1002/pssc.201100444)
- Huang, T. et al., 2012. Low-Leakage-Current AlN/GaN MOSHFETs using Al2O3 for Increased 2DEG. IEEE Electron Device Letters 33 (2), pp.212-214. (10.1109/LED.2011.2176909)
- Liu, Z. J. et al., 2012. Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays. Presented at: 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 15 - 20 May 2011. 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011. Vol. 42.Vol. 1. SID. , pp.1215-1218. (10.1889/1.3621049)
2011
- Lee, C. M. et al., 2011. GaN-based lamb-wave mass-sensors on silicon substrates. Presented at: SENSORS 2010, 9th IEEE Sensors Conference, 2010 Waikoloa, HI 01 - 04 November 2010. Published in: Kenny, T. and Fedder, G. eds. Proceedings of IEEE Sensors. IEEE. , pp.2008-2011. (10.1109/ICSENS.2010.5689946)
2009
- Liu, Z. J. et al., 2009. GaN-based monolithic LED micro-arrays. Presented at: 2009 14th OptoElectronics and Communications Conference Hong Kong 13-17 July 2009. 2009 14th OptoElectronics and Communications Conference. IEEE(10.1109/OECC.2009.5213302)
Articles
- Huang, T. et al., 2012. Effect of post-gate RTA on leakage current (I off) in GaN MOSHEMTs. Physica Status Solidi (C) 9 (3-4), pp.919-922. (10.1002/pssc.201100444)
- Huang, T. et al., 2012. Low-Leakage-Current AlN/GaN MOSHFETs using Al2O3 for Increased 2DEG. IEEE Electron Device Letters 33 (2), pp.212-214. (10.1109/LED.2011.2176909)
- Li, J. et al., 2025. Fully-vertical GaN-on-SiC Trench MOSFETs. IEEE Electron Device Letters 46 (2), pp.282-285. (10.1109/LED.2024.3520200)
- Li, M. et al., 2014. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition. Chinese Physics B 23 (3) 038403. (10.1088/1674-1056/23/3/038403)
- Liu, Z. J. et al., 2013. 360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (ledos) micro-displays. IEEE/OSA Journal of Display Technology 9 (8), pp.678-682. (10.1109/JDT.2013.2256107)
- Liu, Z. J. et al., 2013. Investigation of forward voltage uniformity in monolithic light-emitting diode arrays. IEEE Photonics Technology Letters 25 (13), pp.1290-1293. (10.1109/LPT.2013.2263223)
- Liu, Z. et al., 2015. GaN-based LED micro-displays for wearable applications. Microelectronic Engineering 148 , pp.98-103. (10.1016/j.mee.2015.09.007)
- Liu Z, Z. J. et al., 2013. A novel BLU-free full-color LED projector using LED on silicon micro-displays. IEEE Photonics Technology Letters 25 (23), pp.2267-2270. (10.1109/LPT.2013.2285229)
- Ma, J. et al., 2013. Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers. Journal of Crystal Growth 370 , pp.265-268. (10.1016/j.jcrysgro.2012.10.028)
- Qi, L. et al., 2023. Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration. Light: Science & Applications 12 258. (10.1038/s41377-023-01298-w)
- Yan, Z. et al. 2025. MOCVD-grown InAs/InP quantum dot lasers with low threshold current. Optics Express 33 (15), pp.31195-31203. (10.1364/OE.568365)
- Zou, X. et al., 2014. High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer. Physica Status Solidi (C) Current Topics in Solid State Physics 11 (3-4), pp.730-733. (10.1002/pssc.201300506)
- Zou, X. et al., 2013. High-performance green and yellow LEDs grown on SiO2 nanorod patterned GaN/Si templates. IEEE Electron Device Letters 34 (7), pp.903-905. (10.1109/LED.2013.2260126)
Conferences
- Chong, W. C. et al., 2013. A novel full-color 3LED projection system using R-G-B light emitting diodes on silicon (LEDoS) micro-displays. Presented at: SID International Symposium June 2013. SID Symposium Digest of Technical Papers. Vol. 44.Vol. 1. Blackwell Publishing Ltd. , pp.838-841. (10.1002/j.2168-0159.2013.tb06348.x)
- Lee, C. M. et al., 2011. GaN-based lamb-wave mass-sensors on silicon substrates. Presented at: SENSORS 2010, 9th IEEE Sensors Conference, 2010 Waikoloa, HI 01 - 04 November 2010. Published in: Kenny, T. and Fedder, G. eds. Proceedings of IEEE Sensors. IEEE. , pp.2008-2011. (10.1109/ICSENS.2010.5689946)
- Liu, Z. J. et al., 2013. GaN based light-emitting diode on silicon (LEDoS) micro-displays for BLU-free full-color projector application. Presented at: 2013 IEEE Photonics Conference, IPC 2013 Bellevue, WA 08-12 September 2013. 2013 IEEE Photonics Conference, IPC 2013. IEEE. , pp.171-172. (10.1109/IPCon.2013.6656489)
- Liu, Z. J. et al., 2012. Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays. Presented at: 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 15 - 20 May 2011. 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011. Vol. 42.Vol. 1. SID. , pp.1215-1218. (10.1889/1.3621049)
- Liu, Z. J. et al., 2009. GaN-based monolithic LED micro-arrays. Presented at: 2009 14th OptoElectronics and Communications Conference Hong Kong 13-17 July 2009. 2009 14th OptoElectronics and Communications Conference. IEEE(10.1109/OECC.2009.5213302)
- Luo, W. et al., 2022. InP/GaAsP DWELL lasers grown on (001) Si emitting at 740 nm. Presented at: 28th International Semiconductor Laser Conference (ISLC) Matsue, Japan 16-19 October 2022. Proceedings of 28th International Semiconductor Laser Conference. IEEE(10.23919/islc52947.2022.9943341)