![Arthur Collier](https://profiles-cardiff.imgix.net/attachments/8314?w=200&h=200&auto=format&crop=faces&fit=crop&q=90")
Trosolwyg
Dyfarnwyd fy efrydiaeth PhD gan Ganolfan Hyfforddiant Doethurol EPSRC mewn Gweithgynhyrchu Lled-ddargludyddion Cyfansawdd, gyda nawdd gan y Catapult Ceisiadau Lled-ddargludyddion Cyfansawdd. Fe wnes i barhau fel Cydymaith Ymchwil yn y Ganolfan Peirianneg Amledd Uchel ym Mhrifysgol Caerdydd.
Cyhoeddiad
2025
- Collier, A., Eblabla, A., Sampson, W., Yadollahifarsi, E., Hepp, E., Conte, R. and Elgaid, K. 2025. Metal additive micro-manufacturing to achieve enhanced air-bridge geometry for coplanar waveguide mm-wave GaN-on-SiC integrated circuits. Presented at: CS MANTECH, New Orleans, US, 18-21st May 2025.
- Eblabla, A., Sampson, W., Bhat, A. M., Collier, A., Yadollahifarsi, E. and Elgaid, K. 2025. Dual-gate RF HEMT based on P-GaN/AlGaN on Si technology for future X-band on-chip RF and power electronics. Presented at: CS MANTECH, New Orleans, US, 18-21st May 2025.
- Collier, A., Eblabla, A., Sampson, W., Shepphard, D., Harvey, A., Quaglia, R. and Elgaid, K. 2025. Large-signal performance comparison of ion implant and mesa etch isolated AlGaN/GaN HEMT switches on silicon. Presented at: European Microwave Integrated Circuits Conference, Utrecht, The Netherlands, 23 September 2025.
2024
- Eblabla, A., Sampson, W., Collier, A. and Elgaid, K. 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 23-24 September 20242024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE pp. 343-346., (10.23919/eumic61603.2024.10732350)
Conferences
- Collier, A., Eblabla, A., Sampson, W., Yadollahifarsi, E., Hepp, E., Conte, R. and Elgaid, K. 2025. Metal additive micro-manufacturing to achieve enhanced air-bridge geometry for coplanar waveguide mm-wave GaN-on-SiC integrated circuits. Presented at: CS MANTECH, New Orleans, US, 18-21st May 2025.
- Eblabla, A., Sampson, W., Bhat, A. M., Collier, A., Yadollahifarsi, E. and Elgaid, K. 2025. Dual-gate RF HEMT based on P-GaN/AlGaN on Si technology for future X-band on-chip RF and power electronics. Presented at: CS MANTECH, New Orleans, US, 18-21st May 2025.
- Collier, A., Eblabla, A., Sampson, W., Shepphard, D., Harvey, A., Quaglia, R. and Elgaid, K. 2025. Large-signal performance comparison of ion implant and mesa etch isolated AlGaN/GaN HEMT switches on silicon. Presented at: European Microwave Integrated Circuits Conference, Utrecht, The Netherlands, 23 September 2025.
- Eblabla, A., Sampson, W., Collier, A. and Elgaid, K. 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 23-24 September 20242024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE pp. 343-346., (10.23919/eumic61603.2024.10732350)
Addysgu
Rwy'n cefnogi cyflwyno'r modiwlau ôl-raddedig canlynol:
- ENT871 Micro- a nano-beirianneg
- ENT870 Microdon a Millimetre-don Integredig Cylchdaith Dylunio a Thechnoleg
Contact Details
Y Ganolfan Ymchwil Drosiadol, Ystafell 2.03, Heol Maindy, Cathays, Caerdydd, CF24 4HQ
Themâu ymchwil
Arbenigeddau
- Lled-ddargludyddion cyfansawdd
- Peirianneg amlder radio
- Micro / Nanotechnoleg
- Gweithgynhyrchu ychwanegion