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Arthur Collier
Teams and roles for Arthur Collier
Research Associate
Overview
My Ph.D. studentship was awarded by the EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing, with sponsorship from the Compound Semiconductor Applications Catapult. I continued as a Research Associate within the Centre for High Frequency Engineering at Cardiff University.
Publication
2025
- Collier, A., Eblabla, A., Sampson, W., Yadollahifarsi, E., Hepp, E., Conte, R. and Elgaid, K. 2025. Metal additive micro-manufacturing to achieve enhanced air-bridge geometry for coplanar waveguide mm-wave GaN-on-SiC integrated circuits. Presented at: CS MANTECH, New Orleans, US, 18-21st May 2025.
- Eblabla, A., Sampson, W., Bhat, A. M., Collier, A., Yadollahifarsi, E. and Elgaid, K. 2025. Dual-gate RF HEMT based on P-GaN/AlGaN on Si technology for future X-band on-chip RF and power electronics. Presented at: CS MANTECH, New Orleans, US, 18-21st May 2025.
2024
- Eblabla, A., Sampson, W., Collier, A. and Elgaid, K. 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 23-24 September 20242024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE pp. 343-346., (10.23919/eumic61603.2024.10732350)
Conferences
- Collier, A., Eblabla, A., Sampson, W., Yadollahifarsi, E., Hepp, E., Conte, R. and Elgaid, K. 2025. Metal additive micro-manufacturing to achieve enhanced air-bridge geometry for coplanar waveguide mm-wave GaN-on-SiC integrated circuits. Presented at: CS MANTECH, New Orleans, US, 18-21st May 2025.
- Eblabla, A., Sampson, W., Bhat, A. M., Collier, A., Yadollahifarsi, E. and Elgaid, K. 2025. Dual-gate RF HEMT based on P-GaN/AlGaN on Si technology for future X-band on-chip RF and power electronics. Presented at: CS MANTECH, New Orleans, US, 18-21st May 2025.
- Eblabla, A., Sampson, W., Collier, A. and Elgaid, K. 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 23-24 September 20242024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE pp. 343-346., (10.23919/eumic61603.2024.10732350)
Teaching
I support the delivery of the following post-graduate modules:
- ENT871 Micro- and Nano-engineering
- ENT870 Microwave and Millimetre-wave Integrated Circuit Design and Technology
Contact Details
Translational Research Hub, Room 2.03, Maindy Road, Cathays, Cardiff, CF24 4HQ
Research themes
Specialisms
- Compound semiconductors
- Radio frequency engineering
- Micro/Nanotechnology
- Additive manufacturing