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Dr Abdalla Eblabla
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Timau a rolau for Abdalla Eblabla
Darlithydd
Trosolwg
Rwy'n dod yn ddarlithydd ac yn aelod o staff academaidd ar gyfer grŵp ymchwil Canolfan Peirianneg Amledd Uchel ym Mhrifysgol Caerdydd ym mis Chwefror 2022. Derbyniais fy ngradd PhD mewn Electroneg a Pheirianneg Drydanol yn 2017 o Brifysgol Glasgow. Ers hynny, mae fy ffocws ymchwil wedi bod ar ddatblygu technoleg cydnaws Cylchdaith Integredig Monolithig Microdon (MMIC) ar gyfer gwireddu dyfeisiau goddefol a gweithredol perfformiad uchel ar swbstradau sy'n seiliedig ar Gan ar gyfer cymwysiadau MMIC tonnau mm. Gwnaed hyn gan ddefnyddio technegau nanodechnoleg o'r radd flaenaf yn seiliedig ar amrywiaeth o dechnolegau lled-ddargludyddion cyfansawdd gan gynnwys GaN-on-Si, GaN-on-SiC a GaN-on-Diamond. Defnyddir y dechnoleg ddyfais lled-ddargludyddion datblygedig ar gyfer y meysydd ymchwil canlynol:
- Systemau cyfathrebu di-wifr a microdon cenhedlaeth newydd.
- Terahertz (THz) systemau delweddu a sbectrosgopeg.
- Systemau electronig pŵer ynni-effeithlon.
- Biosynwyryddion.
- Synwyryddion cemegol.
- Technoleg aml-synhwyrydd ar gyfer canfod llif ar yr un pryd, pwysau, tymheredd a nwy (CO2 neu H2).
Mae gen i gydweithrediadau ymchwil gyda'r ysgol ffiseg a meddygaeth, gan fanteisio'n llawn ar dechnoleg ddyfais lled-ddargludyddion cyfansawdd datblygedig sy'n cystadlu â geiriau. Ewch i'm hadran ymchwil yn fy mhroffil os oes gennych ddiddordeb mewn mwy o fanylion am fy ngweithgareddau ymchwil.
Cyhoeddiad
2026
- Collier, A. et al. 2026. Suppression of the DC-IV kink effect in AlGaN/GaN MIS-HEMTs through device topology variation. Applied Physics Letters 129 (1) 013506. (10.1063/5.0324335)
- Talal, D. , Al-Rawachy, A. and Eblabla, A. 2026. Comprehensive review of offline voice control systems for smart homes: technological advances, existing challenges, and prospective developments. Maǧallaẗ al-rāfidayn li-ʿulūm al-ḥāsibāt wa-al-riyāḍiyyāẗ/Al-Rafidain journal for computer sciences and mathematics 20 (1), pp.1-11. (10.33899/rjcsm.v20i1.60652)
2025
- Collier, A. , Eblabla, A. and Elgaid, K. 2025. Sculpting at the micro-scale. [Online].Vol. 9Compound Semiconductor Magazine: Angel Business Communications. Available at: https://compoundsemiconductor.net/article/123096/Sculpting_at_the_micro-scale.
- Collier, A. et al. 2025. Large-signal performance comparison of ion implant and mesa etch isolated AlGaN/GaN HEMT switches on silicon. Presented at: European Microwave Integrated Circuits Conference Utrecht, The Netherlands 23 September 2025. Proceedings of the 20th European Microwave Integrated Circuits Conference. IEEE. , pp.230-233. (10.23919/EuMIC65284.2025.11234588)
- Al-Rawachy, A. et al. 2025. Automated Cardiff model complexity identification and parameters extraction from measured tailored A-pull data. IEEE Journal of Microwaves 5 (5), pp.1150-1161. (10.1109/JMW.2025.3600995)
- Collier, A. et al. 2025. Metal additive micro-manufacturing to achieve enhanced air-bridge geometry for coplanar waveguide mm-wave GaN-on-SiC integrated circuits. Presented at: CS MANTECH New Orleans, US 18-21st May 2025.
- Eblabla, A. et al. 2025. Dual-gate RF HEMT based on P-GaN/AlGaN on Si technology for future X-band on-chip RF and power electronics. Presented at: CS MANTECH New Orleans, US 18-21st May 2025.
2024
- Varghese, A. , Eblabla, A. and Elgaid, K. 2024. Open-gated GaN HEMT-based pH detectors using patterned sensing area. IEEE Sensors Journal 24 (23), pp.38620-38626. (10.1109/jsen.2024.3477744)
- Eblabla, A. et al. 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC) Paris, France 23-24 September 2024. 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE. , pp.343-346. (10.23919/eumic61603.2024.10732350)
2023
- Eblabla, A. et al. 2023. Low-loss MIM capacitor on thick SiO2 dielectric for GaN-on-Si substrates with Standard and elevated top electrode configurations. Presented at: 53rd European Microwave Conference (EuMC) Berlin, Germany 19-21 September 2023. Proceedings of 53rd European Microwave Conference. IEEE. , pp.38-41. (10.23919/EuMC58039.2023.10290587)
2022
- Varghese, A. et al. 2022. GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity. IEEE Sensors Journal 22 (12), pp.12307-12313. (10.1109/JSEN.2022.3170653)
2021
- Varghese, A. , Eblabla, A. and Elgaid, K. 2021. Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit. IEEE Sensors Journal 21 (13), pp.15361-15368. (10.1109/JSEN.2021.3072476)
- Ghosh, S. et al., 2021. Origin(s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon. ACS Applied Electronic Materials 3 (2), pp.813-824. (10.1021/acsaelm.0c00966)
2020
- Alathbah, M. , Eblabla, A. and Elgaid, K. 2020. Frequency doubler based on a lateral multi-channel GaN Schottky barrier diode for 5G technology. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020) Smolenice, Slovakia 11-14 October 2020. 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE. , pp.14-18. (10.1109/ASDAM50306.2020.9393861)
- Alathbah, M. , Eblabla, A. and Elgaid, K. 2020. Novel slotted mmWave CPW branch line coupler for MMIC and sub-THz applications. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020) Smolenice, Slovakia 11-14 October 2020. 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE. , pp.111-114. (10.1109/ASDAM50306.2020.9393863)
- Benakaprasad, B. et al. 2020. Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon. IEEE Transactions on Electron Devices 63 (3), pp.863-868. (10.1109/TED.2020.2968186)
- Eblabla, A. et al. 2020. Membrane supported GaN CPW structures for high-frequency and high-power applications. Presented at: 2019 IEEE Asia-Pacific Microwave Conference (APMC) Marina Bay Sands, Singapore 10-13 December 2019. 2019 IEEE Asia-Pacific Microwave Conference (APMC). IEEE. , pp.1179-1181. (10.1109/APMC46564.2019.9038731)
2019
- Benakaprasad, B. et al. 2019. 90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology. Presented at: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Paris, France 1-6 Sept 2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE(10.1109/IRMMW-THz.2019.8873748)
- Eblabla, A. et al. 2019. Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters 40 (6), pp.878-880. (10.1109/LED.2019.2912910)
- Chandrasekar, H. et al., 2019. Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology. IEEE Transactions on Electron Devices 66 (4), pp.1681-1687. (10.1109/TED.2019.2896156)
2018
- Chandrasekar, H. et al., 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39 (10), pp.1556-1559. (10.1109/LED.2018.2864562)
- Eblabla, A. et al. 2018. High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters 28 (2), pp.99-101. (10.1109/LMWC.2018.2790705)
2017
- Eblabla, A. et al. 2017. Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017 Prague, Czech Republic 28-30 June 2017. Radar Symposium Conference Proceedings. , pp.1-7. (10.23919/IRS.2017.8008166)
- Benakaprasad, B. et al. 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific New Delhi, India 5-9 Dec 2016. Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE(10.1109/APMC.2016.7931368)
- Eblabla, A. M. et al. 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7 (1), pp.93-97. (10.1109/TTHZ.2016.2618751)
- Benakaprasad, B. et al., 2017. Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (EuMC), 2016 46th European London, UK 4-6 Oct 2016. Microwave Conference (APMC) 2016 Asia-Pacific. IEEE. , pp.413. (10.1109/EuMC.2016.7824367)
- Eblabla, A. et al. 2017. Low-loss MMICs viable transmission media for GaN-on-Low resistivity silicon technology. IEEE Microwave and Wireless Components Letters 27 (1), pp.10-12. (10.1109/LMWC.2016.2629964)
2016
- Benakaprasad, B. et al. 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Copenhagen, Denmark 25-30 Sep 2016. 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE(10.1109/IRMMW-THz.2016.7758488)
- Benakaprasad, B. et al. 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics Glasgow, UK 26 May 2016.
- Eblabla, A. et al. 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference Milton Common Nr Thame, UK 18-19 Apr 2016.
- Eblabla, A. et al. 2016. GaN-based HEMTs on low resistivity silicon technology for microwave applications. Presented at: 8th Wide Bandgap Semiconductor and Components Workshop Harwell, UK 12-13 Sept 2016.
- Elgaid, K. et al. 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016) Orlando, FL, USA 2-7 Oct 2016.
2015
- Eblabla, A. et al. 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36 (9), pp.899-901. (10.1109/LED.2015.2460120)
- Eblabla, A. et al. 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25 (7), pp.427-429. (10.1109/LMWC.2015.2429120)
Articles
- Collier, A. et al. 2026. Suppression of the DC-IV kink effect in AlGaN/GaN MIS-HEMTs through device topology variation. Applied Physics Letters 129 (1) 013506. (10.1063/5.0324335)
- Talal, D. , Al-Rawachy, A. and Eblabla, A. 2026. Comprehensive review of offline voice control systems for smart homes: technological advances, existing challenges, and prospective developments. Maǧallaẗ al-rāfidayn li-ʿulūm al-ḥāsibāt wa-al-riyāḍiyyāẗ/Al-Rafidain journal for computer sciences and mathematics 20 (1), pp.1-11. (10.33899/rjcsm.v20i1.60652)
- Al-Rawachy, A. et al. 2025. Automated Cardiff model complexity identification and parameters extraction from measured tailored A-pull data. IEEE Journal of Microwaves 5 (5), pp.1150-1161. (10.1109/JMW.2025.3600995)
- Varghese, A. , Eblabla, A. and Elgaid, K. 2024. Open-gated GaN HEMT-based pH detectors using patterned sensing area. IEEE Sensors Journal 24 (23), pp.38620-38626. (10.1109/jsen.2024.3477744)
- Varghese, A. et al. 2022. GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity. IEEE Sensors Journal 22 (12), pp.12307-12313. (10.1109/JSEN.2022.3170653)
- Varghese, A. , Eblabla, A. and Elgaid, K. 2021. Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit. IEEE Sensors Journal 21 (13), pp.15361-15368. (10.1109/JSEN.2021.3072476)
- Ghosh, S. et al., 2021. Origin(s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon. ACS Applied Electronic Materials 3 (2), pp.813-824. (10.1021/acsaelm.0c00966)
- Benakaprasad, B. et al. 2020. Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon. IEEE Transactions on Electron Devices 63 (3), pp.863-868. (10.1109/TED.2020.2968186)
- Eblabla, A. et al. 2019. Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters 40 (6), pp.878-880. (10.1109/LED.2019.2912910)
- Chandrasekar, H. et al., 2019. Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology. IEEE Transactions on Electron Devices 66 (4), pp.1681-1687. (10.1109/TED.2019.2896156)
- Chandrasekar, H. et al., 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39 (10), pp.1556-1559. (10.1109/LED.2018.2864562)
- Eblabla, A. et al. 2018. High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters 28 (2), pp.99-101. (10.1109/LMWC.2018.2790705)
- Eblabla, A. M. et al. 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7 (1), pp.93-97. (10.1109/TTHZ.2016.2618751)
- Eblabla, A. et al. 2017. Low-loss MMICs viable transmission media for GaN-on-Low resistivity silicon technology. IEEE Microwave and Wireless Components Letters 27 (1), pp.10-12. (10.1109/LMWC.2016.2629964)
- Eblabla, A. et al. 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36 (9), pp.899-901. (10.1109/LED.2015.2460120)
- Eblabla, A. et al. 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25 (7), pp.427-429. (10.1109/LMWC.2015.2429120)
Conferences
- Collier, A. et al. 2025. Large-signal performance comparison of ion implant and mesa etch isolated AlGaN/GaN HEMT switches on silicon. Presented at: European Microwave Integrated Circuits Conference Utrecht, The Netherlands 23 September 2025. Proceedings of the 20th European Microwave Integrated Circuits Conference. IEEE. , pp.230-233. (10.23919/EuMIC65284.2025.11234588)
- Collier, A. et al. 2025. Metal additive micro-manufacturing to achieve enhanced air-bridge geometry for coplanar waveguide mm-wave GaN-on-SiC integrated circuits. Presented at: CS MANTECH New Orleans, US 18-21st May 2025.
- Eblabla, A. et al. 2025. Dual-gate RF HEMT based on P-GaN/AlGaN on Si technology for future X-band on-chip RF and power electronics. Presented at: CS MANTECH New Orleans, US 18-21st May 2025.
- Eblabla, A. et al. 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC) Paris, France 23-24 September 2024. 2024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE. , pp.343-346. (10.23919/eumic61603.2024.10732350)
- Eblabla, A. et al. 2023. Low-loss MIM capacitor on thick SiO2 dielectric for GaN-on-Si substrates with Standard and elevated top electrode configurations. Presented at: 53rd European Microwave Conference (EuMC) Berlin, Germany 19-21 September 2023. Proceedings of 53rd European Microwave Conference. IEEE. , pp.38-41. (10.23919/EuMC58039.2023.10290587)
- Alathbah, M. , Eblabla, A. and Elgaid, K. 2020. Frequency doubler based on a lateral multi-channel GaN Schottky barrier diode for 5G technology. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020) Smolenice, Slovakia 11-14 October 2020. 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE. , pp.14-18. (10.1109/ASDAM50306.2020.9393861)
- Alathbah, M. , Eblabla, A. and Elgaid, K. 2020. Novel slotted mmWave CPW branch line coupler for MMIC and sub-THz applications. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020) Smolenice, Slovakia 11-14 October 2020. 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE. , pp.111-114. (10.1109/ASDAM50306.2020.9393863)
- Eblabla, A. et al. 2020. Membrane supported GaN CPW structures for high-frequency and high-power applications. Presented at: 2019 IEEE Asia-Pacific Microwave Conference (APMC) Marina Bay Sands, Singapore 10-13 December 2019. 2019 IEEE Asia-Pacific Microwave Conference (APMC). IEEE. , pp.1179-1181. (10.1109/APMC46564.2019.9038731)
- Benakaprasad, B. et al. 2019. 90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology. Presented at: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Paris, France 1-6 Sept 2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE(10.1109/IRMMW-THz.2019.8873748)
- Eblabla, A. et al. 2017. Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017 Prague, Czech Republic 28-30 June 2017. Radar Symposium Conference Proceedings. , pp.1-7. (10.23919/IRS.2017.8008166)
- Benakaprasad, B. et al. 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific New Delhi, India 5-9 Dec 2016. Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE(10.1109/APMC.2016.7931368)
- Benakaprasad, B. et al., 2017. Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (EuMC), 2016 46th European London, UK 4-6 Oct 2016. Microwave Conference (APMC) 2016 Asia-Pacific. IEEE. , pp.413. (10.1109/EuMC.2016.7824367)
- Benakaprasad, B. et al. 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Copenhagen, Denmark 25-30 Sep 2016. 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE(10.1109/IRMMW-THz.2016.7758488)
- Benakaprasad, B. et al. 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics Glasgow, UK 26 May 2016.
- Eblabla, A. et al. 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference Milton Common Nr Thame, UK 18-19 Apr 2016.
- Eblabla, A. et al. 2016. GaN-based HEMTs on low resistivity silicon technology for microwave applications. Presented at: 8th Wide Bandgap Semiconductor and Components Workshop Harwell, UK 12-13 Sept 2016.
- Elgaid, K. et al. 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016) Orlando, FL, USA 2-7 Oct 2016.
Websites
- Collier, A. , Eblabla, A. and Elgaid, K. 2025. Sculpting at the micro-scale. [Online].Vol. 9Compound Semiconductor Magazine: Angel Business Communications. Available at: https://compoundsemiconductor.net/article/123096/Sculpting_at_the_micro-scale.
Ymchwil
Mae fy maes ymchwil presennol yn canolbwyntio ar ddylunio a datblygu dyfeisiau analog lled-ddargludyddion cyfansawdd cost-effeithiol, cyflym gan ddefnyddio technegau micro a nanodechnoleg arloesol mewnol. Rwyf wedi ennill gwybodaeth a phrofiad cryf (> 8 mlynedd) mewn technoleg saernïo dyfeisiau yn seiliedig ar GaN, sy'n dod i'r amlwg fel y deunydd o ddewis ar gyfer y rhan fwyaf o gymwysiadau. Gellir crynhoi fy niddordebau ymchwil fel a ganlyn:
- Technoleg GaN-on-Si ar gyfer cymwysiadau electroneg pŵer (Net Zero) a thon-mm (6G).
- Technoleg sy'n seiliedig ar Gan ar gyfer synwyryddion a gofal meddygol.
- ffynonellau Terahertz sy'n seiliedig ar ddeuodau GaN Schottky.
- Gwneuthuriad arae antena ar sglodion ar gyfer cymwysiadau cylched integredig is-THz.
Rwyf wedi bod yn gweithio ar ystod eang o brosiectau a ariennir gan y DU ar y cyd â chydweithwyr lleol gan gynnwys yr Ysgol Ffiseg, yr Ysgol Meddygaeth ym Mhrifysgol Caerdydd, a thimau ymchwil eraill o brifysgolion a phartneriaid diwydiannol o'r radd flaenaf yn y DU. Mae'r prosiectau ymchwil hyn yn targedu cyfathrebu diwifr cyflym, radar, synwyryddion a chymwysiadau systemau. Mae fy nghyfraniad rhannol i nifer o gynigion gwyddonol blaenorol a chyfredol yn cynnwys y canlynol:
- Cyllid EPSRC, "Integreiddio RF Circuits gyda Cyflymder Uchel GaN Newid ar Sis Si" Awst 2016 – Gorffennaf 2019.
- Innovate UK "Astudiaeth Ddichonoldeb ar gyfer Datblygu Dyfeisiau RF amledd uchel yn GaN", Medi 2017 – Awst 2018.
- Cyllid Prifysgol Caergrawnt, "GaN Sensors" Ebrill 2018 – Ebrill 2019.
- Cyllid EPSRC, "byfferau perfformiad uchel ar gyfer electroneg RF GaN" Medi 2019 - Medi 2021.
- Cyllid EPSRC, "GaN on Diamond" Awst 2019 – Medi 2022.
- Cyllid Llywodraeth Cymru, "Gallium Nitraride ar gyfer Cyfathrebu a Diogelwch" Rhagfyr 2019 – Tachwedd 2022.
Addysgu
Ar hyn o bryd rwy'n dysgu'r modiwlau canlynol:
- ENT871 - Peirianneg Micro a Nano.
- ENT870 - Dylunio a Thechnoleg Cylchdaith Integredig Microdon a Millimeter-Wave.
- ENT693 - Astudiaeth Ymchwil
Bywgraffiad
- 2017: PhD mewn Peirianneg Electroneg a Thrydanol, Prifysgol Glasgow, Glasgow, Y Deyrnas Unedig.
- 2012: MSc mewn Peirianneg Electroneg a Thrydanol, Prifysgol Glasgow, Glasgow, Y Deyrnas Unedig.
- 2007: BSc mewn Peirianneg Gyfathrebu, Prifysgol Misurata, Misurata, Libya.
Aelodaethau proffesiynol
- IEEE - Sefydliad y Peirianwyr Trydanol ac Electroneg (IEEE).
Safleoedd academaidd blaenorol
- Rhagosodiad 2022: Darlithydd yn Ysgol Peirianneg Prifysgol Caerdydd, ddechreuodd y rôl hon ym mis Chwefror 2022.
- 2018-2022: Cydymaith Ymchwil mewn Electroneg Analog ym maes Technoleg Lled-ddargludyddion Cyfansawdd yn y Ganolfan Peirianneg Amledd Uchel, Ysgol Peirianneg, Prifysgol Caerdydd.
- 2017-2018: Cymorth Ymchwil mewn Electroneg Analog ym maes Technoleg Lled-ddargludyddion Cyfansawdd Microdon a Milimetr yn y Peirianneg Electronig a Nanoscale, Ysgol Peirianneg, Prifysgol Glasgow.
- 2012-2013: Cynorthwy-ydd Addysgu ym Mhrifysgol Misurata, Cyfadran Peirianneg, Misurata, Libya.
- 2007-2011: Cynorthwy-ydd Addysgu ym Mhrifysgol Misurata, Cyfadran Peirianneg, Misurata, Libya.
Pwyllgorau ac adolygu
- Llythyrau electroneg IEEE.
- Llythyrau Dyfais Electron IEEE.
- Cynhadledd Microdon Ewropeaidd IEEE.
Meysydd goruchwyliaeth
Mae gen i ddiddordeb mewn goruchwylio myfyrwyr PhD ym meysydd:
- RF GaN-dechnoleg ddyfais seiliedig ar gyfer telathrebu RF.
- Datblygu technoleg dyfeisiau gweithredol sy'n seiliedig ar Gan ar gyfer cymwysiadau newid pŵer.
- Dyfeisiau goddefol tonnau milimedr a THz ar-sglodion yn seiliedig ar VI & III-V lled-ddargludyddion cyfansawdd.
- Datblygu technoleg MEMs sy'n seiliedig ar Gan ar gyfer synhwyro a delweddu THz.
Myfyrwyr ôl-raddedig presennol:
- Amandeep Singh.