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Trosolwyg
Rwy'n dod yn ddarlithydd ac yn aelod o staff academaidd ar gyfer grŵp ymchwil Canolfan Peirianneg Amledd Uchel ym Mhrifysgol Caerdydd ym mis Chwefror 2022. Derbyniais fy ngradd PhD mewn Electroneg a Pheirianneg Drydanol yn 2017 o Brifysgol Glasgow. Ers hynny, mae fy ffocws ymchwil wedi bod ar ddatblygu technoleg cydnaws Cylchdaith Integredig Monolithig Microdon (MMIC) ar gyfer gwireddu dyfeisiau goddefol a gweithredol perfformiad uchel ar swbstradau sy'n seiliedig ar Gan ar gyfer cymwysiadau MMIC tonnau mm. Gwnaed hyn gan ddefnyddio technegau nanodechnoleg o'r radd flaenaf yn seiliedig ar amrywiaeth o dechnolegau lled-ddargludyddion cyfansawdd gan gynnwys GaN-on-Si, GaN-on-SiC a GaN-on-Diamond. Defnyddir y dechnoleg ddyfais lled-ddargludyddion datblygedig ar gyfer y meysydd ymchwil canlynol:
- Systemau cyfathrebu di-wifr a microdon cenhedlaeth newydd.
- Terahertz (THz) systemau delweddu a sbectrosgopeg.
- Systemau electronig pŵer ynni-effeithlon.
- Biosynwyryddion.
- Synwyryddion cemegol.
- Technoleg aml-synhwyrydd ar gyfer canfod llif ar yr un pryd, pwysau, tymheredd a nwy (CO2 neu H2).
Mae gen i gydweithrediadau ymchwil gyda'r ysgol ffiseg a meddygaeth, gan fanteisio'n llawn ar dechnoleg ddyfais lled-ddargludyddion cyfansawdd datblygedig sy'n cystadlu â geiriau. Ewch i'm hadran ymchwil yn fy mhroffil os oes gennych ddiddordeb mewn mwy o fanylion am fy ngweithgareddau ymchwil.
Cyhoeddiad
2024
- Eblabla, A., Sampson, W., Collier, A. and Elgaid, K. 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 23-24 September 20242024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE pp. 343-346., (10.23919/eumic61603.2024.10732350)
- Varghese, A., Eblabla, A. and Elgaid, K. 2024. Open-gated GaN HEMT-based pH detectors using patterned sensing area. IEEE Sensors Journal (10.1109/jsen.2024.3477744)
2023
- Eblabla, A., Varghese, A., Chandrashekar, H., Uren, M. J., Kuball, M. and Elgaid, K. 2023. Low-loss MIM capacitor on thick SiO2 dielectric for GaN-on-Si substrates with Standard and elevated top electrode configurations. Presented at: 53rd European Microwave Conference (EuMC), Berlin, Germany, 19-21 September 2023Proceedings of 53rd European Microwave Conference. IEEE pp. 38-41., (10.23919/EuMC58039.2023.10290587)
2022
- Varghese, A., Eblabla, A., Wu, Z., Ghozati, S. U. and Elgaid, K. 2022. GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity. IEEE Sensors Journal 22(12), pp. 12307-12313. (10.1109/JSEN.2022.3170653)
2021
- Varghese, A., Eblabla, A. and Elgaid, K. 2021. Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit. IEEE Sensors Journal 21(13), pp. 15361-15368. (10.1109/JSEN.2021.3072476)
- Alathbah, M., Eblabla, A. and Elgaid, K. 2021. Frequency doubler based on a lateral multi-channel GaN Schottky barrier diode for 5G technology. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 20202020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE pp. 14-18., (10.1109/ASDAM50306.2020.9393861)
- Alathbah, M., Eblabla, A. and Elgaid, K. 2021. Novel slotted mmWave CPW branch line coupler for MMIC and sub-THz applications. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 20202020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE pp. 111-114., (10.1109/ASDAM50306.2020.9393863)
- Ghosh, S. et al. 2021. Origin(s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon. ACS Applied Electronic Materials 3(2), pp. 813-824. (10.1021/acsaelm.0c00966)
2020
- Benakaprasad, B., Eblabla, A. M., Li, X., Crawford, K. G. and Elgaid, K. 2020. Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon. IEEE Transactions on Electron Devices 63(3), pp. 863-868. (10.1109/TED.2020.2968186)
- Eblabla, A., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2020. Membrane supported GaN CPW structures for high-frequency and high-power applications. Presented at: 2019 IEEE Asia-Pacific Microwave Conference (APMC), Marina Bay Sands, Singapore, 10-13 December 20192019 IEEE Asia-Pacific Microwave Conference (APMC). IEEE pp. 1179-1181., (10.1109/APMC46564.2019.9038731)
2019
- Benakaprasad, B., Eblabla, A., Li, X. and Elgaid, K. 2019. 90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology. Presented at: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1-6 Sept 201944th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE pp. -., (10.1109/IRMMW-THz.2019.8873748)
- Eblabla, A., Li, X., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2019. Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters 40(6), pp. 878-880. (10.1109/LED.2019.2912910)
- Chandrasekar, H. et al. 2019. Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology. IEEE Transactions on Electron Devices 66(4), pp. 1681-1687. (10.1109/TED.2019.2896156)
2018
- Chandrasekar, H. et al. 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39(10), pp. 1556-1559. (10.1109/LED.2018.2864562)
- Eblabla, A., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. 2018. High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters 28(2), pp. 99-101. (10.1109/LMWC.2018.2790705)
2017
- Eblabla, A., Benakaprasad, B., Li, X., Wallis, D., Guiney, I., Humphreys, C. and Elgaid, K. 2017. Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017, Prague, Czech Republic, 28-30 June 2017Radar Symposium Conference Proceedings. pp. 1-7., (10.23919/IRS.2017.8008166)
- Benakaprasad, B., Eblabla, A., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific, New Delhi, India, 5-9 Dec 2016Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE, (10.1109/APMC.2016.7931368)
- Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7(1), pp. 93-97. (10.1109/TTHZ.2016.2618751)
- Benakaprasad, B., Eblabla, A., Li, X., Elgaid, K., Wallis, D., Guiney, I. and Humphreys, C. 2017. Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (EuMC), 2016 46th European, London, UK, 4-6 Oct 2016Microwave Conference (APMC) 2016 Asia-Pacific. IEEE pp. 413., (10.1109/EuMC.2016.7824367)
- Eblabla, A., Benakaprasad, B., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2017. Low-loss MMICs viable transmission media for GaN-on-Low resistivity silicon technology. IEEE Microwave and Wireless Components Letters 27(1), pp. 10-12. (10.1109/LMWC.2016.2629964)
2016
- Benakaprasad, B. et al. 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),, Copenhagen, Denmark, 25-30 Sep 20162016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE, (10.1109/IRMMW-THz.2016.7758488)
- Eblabla, A., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2016. GaN-based HEMTs on low resistivity silicon technology for microwave applications. Presented at: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell, UK, 12-13 Sept 2016.
- Elgaid, K. et al. 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016.
- Eblabla, A., Li, X., Wallis, D., Benakaprasad, B., Guiney, I. and Elgaid, K. 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016.
- Benakaprasad, B. et al. 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016.
2015
- Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36(9), pp. 899-901. (10.1109/LED.2015.2460120)
- Eblabla, A., Wallis, D., Guiney, I. and Elgaid, K. 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25(7), pp. 427-429. (10.1109/LMWC.2015.2429120)
Cynadleddau
- Eblabla, A., Sampson, W., Collier, A. and Elgaid, K. 2024. Free-standing lateral AlGaN/GaN Schottky Barrier Diode based-on GaN-on-Si technology for high microwave power applications. Presented at: 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 23-24 September 20242024 19th European Microwave Integrated Circuits Conference (EuMIC). IEEE pp. 343-346., (10.23919/eumic61603.2024.10732350)
- Eblabla, A., Varghese, A., Chandrashekar, H., Uren, M. J., Kuball, M. and Elgaid, K. 2023. Low-loss MIM capacitor on thick SiO2 dielectric for GaN-on-Si substrates with Standard and elevated top electrode configurations. Presented at: 53rd European Microwave Conference (EuMC), Berlin, Germany, 19-21 September 2023Proceedings of 53rd European Microwave Conference. IEEE pp. 38-41., (10.23919/EuMC58039.2023.10290587)
- Alathbah, M., Eblabla, A. and Elgaid, K. 2021. Frequency doubler based on a lateral multi-channel GaN Schottky barrier diode for 5G technology. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 20202020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE pp. 14-18., (10.1109/ASDAM50306.2020.9393861)
- Alathbah, M., Eblabla, A. and Elgaid, K. 2021. Novel slotted mmWave CPW branch line coupler for MMIC and sub-THz applications. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 20202020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE pp. 111-114., (10.1109/ASDAM50306.2020.9393863)
- Eblabla, A., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2020. Membrane supported GaN CPW structures for high-frequency and high-power applications. Presented at: 2019 IEEE Asia-Pacific Microwave Conference (APMC), Marina Bay Sands, Singapore, 10-13 December 20192019 IEEE Asia-Pacific Microwave Conference (APMC). IEEE pp. 1179-1181., (10.1109/APMC46564.2019.9038731)
- Benakaprasad, B., Eblabla, A., Li, X. and Elgaid, K. 2019. 90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology. Presented at: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1-6 Sept 201944th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE pp. -., (10.1109/IRMMW-THz.2019.8873748)
- Eblabla, A., Benakaprasad, B., Li, X., Wallis, D., Guiney, I., Humphreys, C. and Elgaid, K. 2017. Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017, Prague, Czech Republic, 28-30 June 2017Radar Symposium Conference Proceedings. pp. 1-7., (10.23919/IRS.2017.8008166)
- Benakaprasad, B., Eblabla, A., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific, New Delhi, India, 5-9 Dec 2016Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE, (10.1109/APMC.2016.7931368)
- Benakaprasad, B., Eblabla, A., Li, X., Elgaid, K., Wallis, D., Guiney, I. and Humphreys, C. 2017. Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (EuMC), 2016 46th European, London, UK, 4-6 Oct 2016Microwave Conference (APMC) 2016 Asia-Pacific. IEEE pp. 413., (10.1109/EuMC.2016.7824367)
- Benakaprasad, B. et al. 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),, Copenhagen, Denmark, 25-30 Sep 20162016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE, (10.1109/IRMMW-THz.2016.7758488)
- Eblabla, A., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2016. GaN-based HEMTs on low resistivity silicon technology for microwave applications. Presented at: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell, UK, 12-13 Sept 2016.
- Elgaid, K. et al. 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016.
- Eblabla, A., Li, X., Wallis, D., Benakaprasad, B., Guiney, I. and Elgaid, K. 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016.
- Benakaprasad, B. et al. 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016.
Erthyglau
- Varghese, A., Eblabla, A. and Elgaid, K. 2024. Open-gated GaN HEMT-based pH detectors using patterned sensing area. IEEE Sensors Journal (10.1109/jsen.2024.3477744)
- Varghese, A., Eblabla, A., Wu, Z., Ghozati, S. U. and Elgaid, K. 2022. GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity. IEEE Sensors Journal 22(12), pp. 12307-12313. (10.1109/JSEN.2022.3170653)
- Varghese, A., Eblabla, A. and Elgaid, K. 2021. Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit. IEEE Sensors Journal 21(13), pp. 15361-15368. (10.1109/JSEN.2021.3072476)
- Ghosh, S. et al. 2021. Origin(s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon. ACS Applied Electronic Materials 3(2), pp. 813-824. (10.1021/acsaelm.0c00966)
- Benakaprasad, B., Eblabla, A. M., Li, X., Crawford, K. G. and Elgaid, K. 2020. Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon. IEEE Transactions on Electron Devices 63(3), pp. 863-868. (10.1109/TED.2020.2968186)
- Eblabla, A., Li, X., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2019. Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters 40(6), pp. 878-880. (10.1109/LED.2019.2912910)
- Chandrasekar, H. et al. 2019. Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology. IEEE Transactions on Electron Devices 66(4), pp. 1681-1687. (10.1109/TED.2019.2896156)
- Chandrasekar, H. et al. 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39(10), pp. 1556-1559. (10.1109/LED.2018.2864562)
- Eblabla, A., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. 2018. High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters 28(2), pp. 99-101. (10.1109/LMWC.2018.2790705)
- Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7(1), pp. 93-97. (10.1109/TTHZ.2016.2618751)
- Eblabla, A., Benakaprasad, B., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2017. Low-loss MMICs viable transmission media for GaN-on-Low resistivity silicon technology. IEEE Microwave and Wireless Components Letters 27(1), pp. 10-12. (10.1109/LMWC.2016.2629964)
- Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36(9), pp. 899-901. (10.1109/LED.2015.2460120)
- Eblabla, A., Wallis, D., Guiney, I. and Elgaid, K. 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25(7), pp. 427-429. (10.1109/LMWC.2015.2429120)
Ymchwil
Mae fy maes ymchwil presennol yn canolbwyntio ar ddylunio a datblygu dyfeisiau analog lled-ddargludyddion cyfansawdd cost-effeithiol, cyflym gan ddefnyddio technegau micro a nanodechnoleg arloesol mewnol. Rwyf wedi ennill gwybodaeth a phrofiad cryf (> 8 mlynedd) mewn technoleg saernïo dyfeisiau yn seiliedig ar GaN, sy'n dod i'r amlwg fel y deunydd o ddewis ar gyfer y rhan fwyaf o gymwysiadau. Gellir crynhoi fy niddordebau ymchwil fel a ganlyn:
- Technoleg GaN-on-Si ar gyfer cymwysiadau electroneg pŵer (Net Zero) a thon-mm (6G).
- Technoleg sy'n seiliedig ar Gan ar gyfer synwyryddion a gofal meddygol.
- ffynonellau Terahertz sy'n seiliedig ar ddeuodau GaN Schottky.
- Gwneuthuriad arae antena ar sglodion ar gyfer cymwysiadau cylched integredig is-THz.
Rwyf wedi bod yn gweithio ar ystod eang o brosiectau a ariennir gan y DU ar y cyd â chydweithwyr lleol gan gynnwys yr Ysgol Ffiseg, yr Ysgol Meddygaeth ym Mhrifysgol Caerdydd, a thimau ymchwil eraill o brifysgolion a phartneriaid diwydiannol o'r radd flaenaf yn y DU. Mae'r prosiectau ymchwil hyn yn targedu cyfathrebu diwifr cyflym, radar, synwyryddion a chymwysiadau systemau. Mae fy nghyfraniad rhannol i nifer o gynigion gwyddonol blaenorol a chyfredol yn cynnwys y canlynol:
- Cyllid EPSRC, "Integreiddio RF Circuits gyda Cyflymder Uchel GaN Newid ar Sis Si" Awst 2016 – Gorffennaf 2019.
- Innovate UK "Astudiaeth Ddichonoldeb ar gyfer Datblygu Dyfeisiau RF amledd uchel yn GaN", Medi 2017 – Awst 2018.
- Cyllid Prifysgol Caergrawnt, "GaN Sensors" Ebrill 2018 – Ebrill 2019.
- Cyllid EPSRC, "byfferau perfformiad uchel ar gyfer electroneg RF GaN" Medi 2019 - Medi 2021.
- Cyllid EPSRC, "GaN on Diamond" Awst 2019 – Medi 2022.
- Cyllid Llywodraeth Cymru, "Gallium Nitraride ar gyfer Cyfathrebu a Diogelwch" Rhagfyr 2019 – Tachwedd 2022.
Addysgu
Ar hyn o bryd rwy'n dysgu'r modiwlau canlynol:
- ENT871 - Peirianneg Micro a Nano.
- ENT870 - Dylunio a Thechnoleg Cylchdaith Integredig Microdon a Millimeter-Wave.
- ENT693 - Astudiaeth Ymchwil
Bywgraffiad
- 2017: PhD mewn Peirianneg Electroneg a Thrydanol, Prifysgol Glasgow, Glasgow, Y Deyrnas Unedig.
- 2012: MSc mewn Peirianneg Electroneg a Thrydanol, Prifysgol Glasgow, Glasgow, Y Deyrnas Unedig.
- 2007: BSc mewn Peirianneg Gyfathrebu, Prifysgol Misurata, Misurata, Libya.
Aelodaethau proffesiynol
- IEEE - Sefydliad y Peirianwyr Trydanol ac Electroneg (IEEE).
Safleoedd academaidd blaenorol
- Rhagosodiad 2022: Darlithydd yn Ysgol Peirianneg Prifysgol Caerdydd, ddechreuodd y rôl hon ym mis Chwefror 2022.
- 2018-2022: Cydymaith Ymchwil mewn Electroneg Analog ym maes Technoleg Lled-ddargludyddion Cyfansawdd yn y Ganolfan Peirianneg Amledd Uchel, Ysgol Peirianneg, Prifysgol Caerdydd.
- 2017-2018: Cymorth Ymchwil mewn Electroneg Analog ym maes Technoleg Lled-ddargludyddion Cyfansawdd Microdon a Milimetr yn y Peirianneg Electronig a Nanoscale, Ysgol Peirianneg, Prifysgol Glasgow.
- 2012-2013: Cynorthwy-ydd Addysgu ym Mhrifysgol Misurata, Cyfadran Peirianneg, Misurata, Libya.
- 2007-2011: Cynorthwy-ydd Addysgu ym Mhrifysgol Misurata, Cyfadran Peirianneg, Misurata, Libya.
Pwyllgorau ac adolygu
- Llythyrau electroneg IEEE.
- Llythyrau Dyfais Electron IEEE.
- Cynhadledd Microdon Ewropeaidd IEEE.
Meysydd goruchwyliaeth
Mae gen i ddiddordeb mewn goruchwylio myfyrwyr PhD ym meysydd:
- RF GaN-dechnoleg ddyfais seiliedig ar gyfer telathrebu RF.
- Datblygu technoleg dyfeisiau gweithredol sy'n seiliedig ar Gan ar gyfer cymwysiadau newid pŵer.
- Dyfeisiau goddefol tonnau milimedr a THz ar-sglodion yn seiliedig ar VI & III-V lled-ddargludyddion cyfansawdd.
- Datblygu technoleg MEMs sy'n seiliedig ar Gan ar gyfer synhwyro a delweddu THz.
Myfyrwyr ôl-raddedig presennol:
- Amandeep Singh.
Contact Details
EblablaA@caerdydd.ac.uk
+44 29 2251 4485
Adeiladau'r Frenhines-Adeilad Canolog, Ystafell Ystafell C3.13, 5 The Parade, Ffordd Casnewydd, Caerdydd, CF24 3AA
+44 29 2251 4485
Adeiladau'r Frenhines-Adeilad Canolog, Ystafell Ystafell C3.13, 5 The Parade, Ffordd Casnewydd, Caerdydd, CF24 3AA