![Abdalla Eblabla](https://profiles-cardiff.imgix.net/attachments/3854?w=200&h=200&auto=format&crop=faces&fit=crop&q=90")
Dr Abdalla Eblabla
Lecturer
- EblablaA@cardiff.ac.uk
- Queen's Buildings - Central Building, Room Room C3.13, 5 The Parade, Newport Road, Cardiff, CF24 3AA
- Available for postgraduate supervision
Overview
I become a lecturer and academic member of staff for the Centre of High-Frequency Engineering research group at Cardiff University in February 2022. I received my PhD degree in Electronics and Electrical Engineering in 2017 from the University of Glasgow. Since then, my research focus has been on the development of Microwave Monolithic Integrated Circuit (MMIC)-compatible technology for the realisation of high-performance passive and active devices on GaN-based substrates for mm-wave MMIC applications. This was done using state-of-art nanotechnology techniques based on a variety of compound semiconductor technologies including GaN-on-Si, GaN-on-SiC and GaN-on-Diamond. The developed semiconductor device technology is used for the following research fields:
- New generation wireless & microwave communication systems.
- Terahertz (THz) imaging and spectroscopy systems.
- Energy-efficient power electronic systems.
- Biosensors.
- Chemical sensors.
- Multi-sensor technology for simultaneous flow, pressure, temperature and gas (CO2 or H2) detection.
I have research collaborations with the school of physics and medicine, taking full advantage of the developed word-competing compound semiconductor device technology. Please visit my research section in my profile if you are interested in more details about my research activities.
Publication
2023
- Eblabla, A., Varghese, A., Chandrashekar, H., Uren, M. J., Kuball, M. and Elgaid, K. 2023. Low-loss MIM capacitor on thick SiO2 dielectric for GaN-on-Si substrates with Standard and elevated top electrode configurations. Presented at: 53rd European Microwave Conference (EuMC), Berlin, Germany, 19-21 September 2023Proceedings of 53rd European Microwave Conference. IEEE pp. 38-41., (10.23919/EuMC58039.2023.10290587)
2022
- Varghese, A., Eblabla, A., Wu, Z., Ghozati, S. U. and Elgaid, K. 2022. GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity. IEEE Sensors Journal 22(12), pp. 12307-12313. (10.1109/JSEN.2022.3170653)
2021
- Varghese, A., Eblabla, A. and Elgaid, K. 2021. Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit. IEEE Sensors Journal 21(13), pp. 15361-15368. (10.1109/JSEN.2021.3072476)
- Alathbah, M., Eblabla, A. and Elgaid, K. 2021. Novel slotted mmWave CPW branch line coupler for MMIC and sub-THz applications. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 20202020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE pp. 111-114., (10.1109/ASDAM50306.2020.9393863)
- Alathbah, M., Eblabla, A. and Elgaid, K. 2021. Frequency doubler based on a lateral multi-channel GaN Schottky barrier diode for 5G technology. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 20202020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE pp. 14-18., (10.1109/ASDAM50306.2020.9393861)
- Ghosh, S. et al. 2021. Origin(s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon. ACS Applied Electronic Materials 3(2), pp. 813-824. (10.1021/acsaelm.0c00966)
2020
- Benakaprasad, B., Eblabla, A. M., Li, X., Crawford, K. G. and Elgaid, K. 2020. Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon. IEEE Transactions on Electron Devices 63(3), pp. 863-868. (10.1109/TED.2020.2968186)
- Eblabla, A., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2020. Membrane supported GaN CPW structures for high-frequency and high-power applications. Presented at: 2019 IEEE Asia-Pacific Microwave Conference (APMC), Marina Bay Sands, Singapore, 10-13 December 20192019 IEEE Asia-Pacific Microwave Conference (APMC). IEEE pp. 1179-1181., (10.1109/APMC46564.2019.9038731)
2019
- Benakaprasad, B., Eblabla, A., Li, X. and Elgaid, K. 2019. 90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology. Presented at: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1-6 Sept 201944th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE pp. -., (10.1109/IRMMW-THz.2019.8873748)
- Eblabla, A., Li, X., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2019. Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters 40(6), pp. 878-880. (10.1109/LED.2019.2912910)
- Chandrasekar, H. et al. 2019. Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology. IEEE Transactions on Electron Devices 66(4), pp. 1681-1687. (10.1109/TED.2019.2896156)
2018
- Chandrasekar, H. et al. 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39(10), pp. 1556-1559. (10.1109/LED.2018.2864562)
- Eblabla, A., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. 2018. High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters 28(2), pp. 99-101. (10.1109/LMWC.2018.2790705)
2017
- Eblabla, A., Benakaprasad, B., Li, X., Wallis, D., Guiney, I., Humphreys, C. and Elgaid, K. 2017. Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017, Prague, Czech Republic, 28-30 June 2017Radar Symposium Conference Proceedings. pp. 1-7., (10.23919/IRS.2017.8008166)
- Benakaprasad, B., Eblabla, A., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific, New Delhi, India, 5-9 Dec 2016Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE, (10.1109/APMC.2016.7931368)
- Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7(1), pp. 93-97. (10.1109/TTHZ.2016.2618751)
- Benakaprasad, B., Eblabla, A., Li, X., Elgaid, K., Wallis, D., Guiney, I. and Humphreys, C. 2017. Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (EuMC), 2016 46th European, London, UK, 4-6 Oct 2016Microwave Conference (APMC) 2016 Asia-Pacific. IEEE pp. 413., (10.1109/EuMC.2016.7824367)
- Eblabla, A., Benakaprasad, B., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2017. Low-loss MMICs viable transmission media for GaN-on-Low resistivity silicon technology. IEEE Microwave and Wireless Components Letters 27(1), pp. 10-12. (10.1109/LMWC.2016.2629964)
2016
- Benakaprasad, B. et al. 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),, Copenhagen, Denmark, 25-30 Sep 20162016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE, (10.1109/IRMMW-THz.2016.7758488)
- Benakaprasad, B. et al. 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016.
- Eblabla, A., Li, X., Wallis, D., Benakaprasad, B., Guiney, I. and Elgaid, K. 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016.
- Elgaid, K. et al. 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016.
- Eblabla, A., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2016. GaN-based HEMTs on low resistivity silicon technology for microwave applications. Presented at: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell, UK, 12-13 Sept 2016.
2015
- Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36(9), pp. 899-901. (10.1109/LED.2015.2460120)
- Eblabla, A., Wallis, D., Guiney, I. and Elgaid, K. 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25(7), pp. 427-429. (10.1109/LMWC.2015.2429120)
Articles
- Varghese, A., Eblabla, A., Wu, Z., Ghozati, S. U. and Elgaid, K. 2022. GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity. IEEE Sensors Journal 22(12), pp. 12307-12313. (10.1109/JSEN.2022.3170653)
- Varghese, A., Eblabla, A. and Elgaid, K. 2021. Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit. IEEE Sensors Journal 21(13), pp. 15361-15368. (10.1109/JSEN.2021.3072476)
- Ghosh, S. et al. 2021. Origin(s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon. ACS Applied Electronic Materials 3(2), pp. 813-824. (10.1021/acsaelm.0c00966)
- Benakaprasad, B., Eblabla, A. M., Li, X., Crawford, K. G. and Elgaid, K. 2020. Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon. IEEE Transactions on Electron Devices 63(3), pp. 863-868. (10.1109/TED.2020.2968186)
- Eblabla, A., Li, X., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2019. Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters 40(6), pp. 878-880. (10.1109/LED.2019.2912910)
- Chandrasekar, H. et al. 2019. Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology. IEEE Transactions on Electron Devices 66(4), pp. 1681-1687. (10.1109/TED.2019.2896156)
- Chandrasekar, H. et al. 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39(10), pp. 1556-1559. (10.1109/LED.2018.2864562)
- Eblabla, A., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. 2018. High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters 28(2), pp. 99-101. (10.1109/LMWC.2018.2790705)
- Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7(1), pp. 93-97. (10.1109/TTHZ.2016.2618751)
- Eblabla, A., Benakaprasad, B., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2017. Low-loss MMICs viable transmission media for GaN-on-Low resistivity silicon technology. IEEE Microwave and Wireless Components Letters 27(1), pp. 10-12. (10.1109/LMWC.2016.2629964)
- Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36(9), pp. 899-901. (10.1109/LED.2015.2460120)
- Eblabla, A., Wallis, D., Guiney, I. and Elgaid, K. 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25(7), pp. 427-429. (10.1109/LMWC.2015.2429120)
Conferences
- Eblabla, A., Varghese, A., Chandrashekar, H., Uren, M. J., Kuball, M. and Elgaid, K. 2023. Low-loss MIM capacitor on thick SiO2 dielectric for GaN-on-Si substrates with Standard and elevated top electrode configurations. Presented at: 53rd European Microwave Conference (EuMC), Berlin, Germany, 19-21 September 2023Proceedings of 53rd European Microwave Conference. IEEE pp. 38-41., (10.23919/EuMC58039.2023.10290587)
- Alathbah, M., Eblabla, A. and Elgaid, K. 2021. Novel slotted mmWave CPW branch line coupler for MMIC and sub-THz applications. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 20202020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE pp. 111-114., (10.1109/ASDAM50306.2020.9393863)
- Alathbah, M., Eblabla, A. and Elgaid, K. 2021. Frequency doubler based on a lateral multi-channel GaN Schottky barrier diode for 5G technology. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 20202020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE pp. 14-18., (10.1109/ASDAM50306.2020.9393861)
- Eblabla, A., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2020. Membrane supported GaN CPW structures for high-frequency and high-power applications. Presented at: 2019 IEEE Asia-Pacific Microwave Conference (APMC), Marina Bay Sands, Singapore, 10-13 December 20192019 IEEE Asia-Pacific Microwave Conference (APMC). IEEE pp. 1179-1181., (10.1109/APMC46564.2019.9038731)
- Benakaprasad, B., Eblabla, A., Li, X. and Elgaid, K. 2019. 90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology. Presented at: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1-6 Sept 201944th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE pp. -., (10.1109/IRMMW-THz.2019.8873748)
- Eblabla, A., Benakaprasad, B., Li, X., Wallis, D., Guiney, I., Humphreys, C. and Elgaid, K. 2017. Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017, Prague, Czech Republic, 28-30 June 2017Radar Symposium Conference Proceedings. pp. 1-7., (10.23919/IRS.2017.8008166)
- Benakaprasad, B., Eblabla, A., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific, New Delhi, India, 5-9 Dec 2016Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE, (10.1109/APMC.2016.7931368)
- Benakaprasad, B., Eblabla, A., Li, X., Elgaid, K., Wallis, D., Guiney, I. and Humphreys, C. 2017. Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (EuMC), 2016 46th European, London, UK, 4-6 Oct 2016Microwave Conference (APMC) 2016 Asia-Pacific. IEEE pp. 413., (10.1109/EuMC.2016.7824367)
- Benakaprasad, B. et al. 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),, Copenhagen, Denmark, 25-30 Sep 20162016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE, (10.1109/IRMMW-THz.2016.7758488)
- Benakaprasad, B. et al. 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016.
- Eblabla, A., Li, X., Wallis, D., Benakaprasad, B., Guiney, I. and Elgaid, K. 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016.
- Elgaid, K. et al. 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016.
- Eblabla, A., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2016. GaN-based HEMTs on low resistivity silicon technology for microwave applications. Presented at: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell, UK, 12-13 Sept 2016.
Research
My current research field focuses on the design and development of cost-effective, high-speed compound semiconductor analogue devices using in-house innovative micro and nanotechnology techniques. I have gained a strong knowledge and experience (> 8 years) in GaN-based device fabrication technology which is emerging as the material of choice for most applications. My research interests can be summarised as follows:
- GaN-on-Si technology for power electronics (Net Zero) and mm-wave (6G) applications.
- GaN-based technology for sensors and medical care.
- GaN Schottky diodes-based Terahertz sources.
- On-chip antenna array fabrication for sub-THz integrated circuit applications.
I have been working on a wide range of UK-funded projects in conjunction with local collaboratives including The School of Physics, the School of Medicine at Cardiff University, and other research teams from top-ranked UK universities and industrial partners. These research projects target high-speed wireless communications, radar, sensors and systems applications. My partial contribution to a number of previous and current scientific proposals consists of the following:
- EPSRC Funding, “Integration of RF Circuits with High-Speed GaN Switching on Si Substrate” August 2016 – July 2019.
- Innovate UK “A Feasibility Study for the Development of GaN-based High-Frequency RF Devices”, September 2017 – August 2018.
- Cambridge University Funding, “GaN Sensors” April 2018 – April 2019.
- EPSRC Funding, “High-performance buffers for RF GaN electronics” September 2019 – September 2021.
- EPSRC Funding, “GaN on Diamond” Aug 2019 – September 2022.
- Welsh Government Funding, “Gallium Nitride for Communication and Security” December 2019 – November 2022.
Teaching
I am currently teaching the following modules:
- ENT871 - Micro- and Nano- Engineering.
- ENT870 - Microwave and Millimeter-Wave Integrated Circuit Design and Technology.
- ENT693 - Research Study.
Biography
- 2017: PhD in Electronics and Electrical Engineering, University of Glasgow, Glasgow, United Kingdom.
- 2012: MSc in Electronics and Electrical Engineering, University of Glasgow, Glasgow, United Kingdom.
- 2007: BSc in Communication Engineering, Misurata University, Misurata, Libya.
Professional memberships
- IEEE member - The Institute of Electrical and Electronics Engineers (IEEE).
Academic positions
- 2022-preset: Lecturer at the School of Engineering of Cardiff University, started this role in February 2022.
- 2018-2022: Research Associate in Analogue Electronics in the area of Compound Semiconductor Technology in the Centre for High-Frequency Engineering, School of Engineering, Cardiff University.
- 2017-2018: Research Assistance in Analogue Electronics in the area of Microwave and Millimetre-wave Compound Semiconductor Technology at the Electronic and Nanoscale Engineering, School of Engineering, University of Glasgow.
- 2012-2013: Teaching assistant at Misurata University, Faculty of Engineering, Misurata, Libya.
- 2007-2011: Teaching assistant at Misurata University, Faculty of Engineering, Misurata, Libya.
Committees and reviewing
- IEEE Electronics Letters.
- IEEE Electron Device Letters.
- IEEE European Microwave Conference.
Supervisions
I am interested in supervising PhD students in the areas of:
- RF GaN-based device technology for RF telecommunications.
- Technology development of GaN-based active devices for power switching applications.
- On-chip millimeter-wave and THz passive devices based on VI & III-V compound semiconductors.
- Development of GaN-based MEMs technology for sensing and THz imaging.
Current postgraduate students:
- Amandeep Singh.
