![Manoj Kesaria BSc, MSc, PhD, FHEA](https://profiles-cardiff.imgix.net/attachments/3764?w=200&h=200&auto=format&crop=faces&fit=crop&q=90")
Dr Manoj Kesaria
(e/fe)
BSc, MSc, PhD, FHEA
- Ar gael fel goruchwyliwr ôl-raddedig
Timau a rolau for Manoj Kesaria
Uwch Ddarlithydd
Grŵp Mater Cyddwysedig a Ffotoneg
Trosolwyg
M.IN. D (Manoj Infrared Detector's) Ffowndri (Est: 2020)
Mae Ffowndri MIND yn dîm o ymchwilwyr a gwyddonwyr sy'n datblygu lled-ddargludyddion cyfansawdd Heterostructures dimensiwn isel o Gan a GaSb ar gyfer synwyryddion is-goch.
Cyhoeddiad
2023
- Cao, P. et al. 2023. Surface passivation of random alloy AlGaAsSb avalanche photodiode. Electronics Letters 59(18), article number: e12956. (10.1049/ell2.12956)
- Alshahrani, D. et al. 2023. Effect of interfacial schemes on the optical and structural properties of InAs/GaSb type-ii superlattices. ACS Applied Materials and Interfaces 15(6), pp. 8624-8635. (10.1021/acsami.2c19292)
2022
- Kwan, D. C. M. et al. 2022. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. Scientific Reports 12(1), article number: 11616. (10.1038/s41598-022-15538-3)
- Alshahrani, D. O., Kesaria, M., Anyebe, E. A., Srivastava, V. and Huffaker, D. L. 2022. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors. Advanced Photonics Research 3(2), article number: 2100094. (10.1002/adpr.202100094)
2021
- Kwan, D., Kesaria, M., Anyebe, E. and Huffaker, D. 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 116, article number: 103756. (10.1016/j.infrared.2021.103756)
- Kesaria, M., Alshahrani, D., Kwan, D., Anyebe, E. and Srivastava, V. 2021. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application. Materials Research Bulletin 142, article number: 111424. (10.1016/j.materresbull.2021.111424)
- Kwan, D. C. M., Kesaria, M., Anyebe, E. A., Alshahrani, D. O., Delmas, M., Liang, B. L. and Huffaker, D. L. 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118(20), article number: 203102. (10.1063/5.0045703)
- Ahmed, J. et al. 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57(2), article number: 4500206. (10.1109/JQE.2021.3058356)
- Anyebe, E. A. and Kesaria, M. 2021. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 2(4), pp. 688-711. (10.1002/nano.202000142)
2020
- Anyebe, E. A., Kesaria, M., Sanchez, A. M. and Zhuang, Q. 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126(6), article number: 427. (10.1007/s00339-020-03609-z)
- Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. and Patanè, A. 2020. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters 116(14), article number: 142108. (10.1063/5.0002407)
2019
- Anyebe, E. A. and Kesaria, M. 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9, article number: 17665. (10.1038/s41598-019-54047-8)
- Sharpe, M. K. et al. 2019. A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics 126(12), article number: 125706. (10.1063/1.5109653)
2018
- Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V. and Shivaprasad, S. M. 2018. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters 101(13), pp. 131605. (10.1063/1.4751986)
- Keen, J., Repiso, E., Lu, Q., Kesaria, M., Marshall, A. and Krier, A. 2018. Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared. Infrared Physics & technology 93, pp. 375-380. (10.1016/j.infrared.2018.08.001)
- Paola, D. et al. 2018. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials 6, pp. 1700492-1700499. (10.1002/adom.201700492)
- Keen, J. A., Lane, D., Kesaria, M., Marshall, A. R. J. and Krier, A. 2018. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics 51(7), pp. 075103-075112. (10.1088/1361-6463/aaa60e/meta)
2016
- Velichko, A. et al. 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109(18), article number: 182115. (10.1063/1.4967381)
- Kesaria, M., de la Mare, M. and Krier, A. 2016. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics 49(43), article number: 435107. (10.1088/0022-3727/49/43/435107)
- Di Paola, D. M. et al. 2016. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports 6, article number: 32039. (10.1038/srep32039)
- Debnath, A., Gandhi, J. S., Kesaria, M., Pillai, R., Starikov, D. and Bensaoula, A. 2016. Effect of N-2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy. Journal of Applied Physics 119(10), article number: 104302. (10.1063/1.4943179)
2015
- Krier, A. et al. 2015. Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics and Technology 73, pp. 126-129. (10.1016/j.infrared.2015.09.011)
- Birindelli, S. et al. 2015. Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology 30(10), article number: 105030. (10.1088/0268-1242/30/10/105030)
- Wheatley, R. et al. 2015. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters 106(23), article number: 232105. (10.1063/1.4922590)
- Bhasker, H. P., Thakur, V., Kesaria, M., Shivaprasad, S. M. and Dhar, S. 2015. Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy. AIP Conference Proceedings 1583, pp. 252-258. (10.1063/1.4865647)
- Kesaria, M., Birindelli, S., Velichko, A. V., Zhuang, Q. D., Patane, A., Capizzi, M. and Krier, A. 2015. In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology 68, pp. 138-142. (10.1016/j.infrared.2014.11.016)
2014
- Anyebe, E. A., Zhuang, Q., Kesaria, M. and Krier, A. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29(8), article number: 85010. (10.1088/0268-1242/29/8/085010)
- Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. and Krier, A. 2014. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. Semiconductor Science and Technology 29(7), article number: 75011. (10.1088/0268-1242/29/7/075011)
2013
- Negi, D., Loukya, B., Dileep, K., Kesaria, M., Kumar, N. and Datta, R. 2013. Characterization of structure and magnetism in Zn1-x(Cox/Mnx)O epitaxial thin films as a function of composition. Superlattices and Microstructures 63, pp. 289. (10.1016/j.spmi.2013.09.007)
- Thakur, V., Kesaria, M. and Shivaprasad, S. 2013. Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications 171, pp. 8. (10.1016/j.ssc.2013.07.012)
- Shetty, S., Kesaria, M., Ghatak, J. and Shivaprasad, S. M. 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13(6), pp. 2407. (10.1021/cg4000928)
2012
- Bhasker, H. P., Dhar, S., Sain, A., Kesaria, M. and Shivaprasad, S. M. 2012. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters 101(13), pp. 132109. (10.1063/1.4755775)
- Kumar, P., Tangi, M., Shetty, S., Kesaria, M. and Shivaprasad, S. M. 2012. Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer. MRS Online Proceedings Library 1411, pp. 57-62. (10.1557/opl.2012.760)
- Mittra, J. et al. 2012. Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film. Materials Science Forum 710, pp. 757-761. (10.4028/www.scientific.net/MSF.710.757)
2011
- Kesaria, M., Shetty, S. and Shivaprasad, S. M. 2011. Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire. Crystal Growth and Design 11(11), pp. 4900-4903. (10.1021/cg200749w)
- Kesaria, M., Shetty, S., Cohen, P. and Shivaprasad, S. 2011. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin 46(11), pp. 1811. (10.1016/j.materresbull.2011.07.043)
- Kesaria, M. and Shivaprasad, S. M. 2011. Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters 99(14), pp. 143105. (10.1063/1.3646391)
- Kesaria, M., Shetty, S. and Shivaprasad, S. 2011. Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth 326(1), pp. 191-194. (10.1016/j.jcrysgro.2011.01.095)
2009
- Kesaria, M., Kumar, M., Govind, . and Shivaprasad, S. 2009. Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science 256(2), pp. 576. (10.1016/j.apsusc.2009.08.064)
Articles
- Cao, P. et al. 2023. Surface passivation of random alloy AlGaAsSb avalanche photodiode. Electronics Letters 59(18), article number: e12956. (10.1049/ell2.12956)
- Alshahrani, D. et al. 2023. Effect of interfacial schemes on the optical and structural properties of InAs/GaSb type-ii superlattices. ACS Applied Materials and Interfaces 15(6), pp. 8624-8635. (10.1021/acsami.2c19292)
- Kwan, D. C. M. et al. 2022. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. Scientific Reports 12(1), article number: 11616. (10.1038/s41598-022-15538-3)
- Alshahrani, D. O., Kesaria, M., Anyebe, E. A., Srivastava, V. and Huffaker, D. L. 2022. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors. Advanced Photonics Research 3(2), article number: 2100094. (10.1002/adpr.202100094)
- Kwan, D., Kesaria, M., Anyebe, E. and Huffaker, D. 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 116, article number: 103756. (10.1016/j.infrared.2021.103756)
- Kesaria, M., Alshahrani, D., Kwan, D., Anyebe, E. and Srivastava, V. 2021. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application. Materials Research Bulletin 142, article number: 111424. (10.1016/j.materresbull.2021.111424)
- Kwan, D. C. M., Kesaria, M., Anyebe, E. A., Alshahrani, D. O., Delmas, M., Liang, B. L. and Huffaker, D. L. 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118(20), article number: 203102. (10.1063/5.0045703)
- Ahmed, J. et al. 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57(2), article number: 4500206. (10.1109/JQE.2021.3058356)
- Anyebe, E. A. and Kesaria, M. 2021. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 2(4), pp. 688-711. (10.1002/nano.202000142)
- Anyebe, E. A., Kesaria, M., Sanchez, A. M. and Zhuang, Q. 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126(6), article number: 427. (10.1007/s00339-020-03609-z)
- Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. and Patanè, A. 2020. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters 116(14), article number: 142108. (10.1063/5.0002407)
- Anyebe, E. A. and Kesaria, M. 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9, article number: 17665. (10.1038/s41598-019-54047-8)
- Sharpe, M. K. et al. 2019. A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics 126(12), article number: 125706. (10.1063/1.5109653)
- Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V. and Shivaprasad, S. M. 2018. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters 101(13), pp. 131605. (10.1063/1.4751986)
- Keen, J., Repiso, E., Lu, Q., Kesaria, M., Marshall, A. and Krier, A. 2018. Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared. Infrared Physics & technology 93, pp. 375-380. (10.1016/j.infrared.2018.08.001)
- Paola, D. et al. 2018. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials 6, pp. 1700492-1700499. (10.1002/adom.201700492)
- Keen, J. A., Lane, D., Kesaria, M., Marshall, A. R. J. and Krier, A. 2018. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics 51(7), pp. 075103-075112. (10.1088/1361-6463/aaa60e/meta)
- Velichko, A. et al. 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109(18), article number: 182115. (10.1063/1.4967381)
- Kesaria, M., de la Mare, M. and Krier, A. 2016. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics 49(43), article number: 435107. (10.1088/0022-3727/49/43/435107)
- Di Paola, D. M. et al. 2016. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports 6, article number: 32039. (10.1038/srep32039)
- Debnath, A., Gandhi, J. S., Kesaria, M., Pillai, R., Starikov, D. and Bensaoula, A. 2016. Effect of N-2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy. Journal of Applied Physics 119(10), article number: 104302. (10.1063/1.4943179)
- Krier, A. et al. 2015. Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics and Technology 73, pp. 126-129. (10.1016/j.infrared.2015.09.011)
- Birindelli, S. et al. 2015. Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology 30(10), article number: 105030. (10.1088/0268-1242/30/10/105030)
- Wheatley, R. et al. 2015. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters 106(23), article number: 232105. (10.1063/1.4922590)
- Bhasker, H. P., Thakur, V., Kesaria, M., Shivaprasad, S. M. and Dhar, S. 2015. Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy. AIP Conference Proceedings 1583, pp. 252-258. (10.1063/1.4865647)
- Kesaria, M., Birindelli, S., Velichko, A. V., Zhuang, Q. D., Patane, A., Capizzi, M. and Krier, A. 2015. In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology 68, pp. 138-142. (10.1016/j.infrared.2014.11.016)
- Anyebe, E. A., Zhuang, Q., Kesaria, M. and Krier, A. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29(8), article number: 85010. (10.1088/0268-1242/29/8/085010)
- Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. and Krier, A. 2014. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. Semiconductor Science and Technology 29(7), article number: 75011. (10.1088/0268-1242/29/7/075011)
- Negi, D., Loukya, B., Dileep, K., Kesaria, M., Kumar, N. and Datta, R. 2013. Characterization of structure and magnetism in Zn1-x(Cox/Mnx)O epitaxial thin films as a function of composition. Superlattices and Microstructures 63, pp. 289. (10.1016/j.spmi.2013.09.007)
- Thakur, V., Kesaria, M. and Shivaprasad, S. 2013. Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications 171, pp. 8. (10.1016/j.ssc.2013.07.012)
- Shetty, S., Kesaria, M., Ghatak, J. and Shivaprasad, S. M. 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13(6), pp. 2407. (10.1021/cg4000928)
- Bhasker, H. P., Dhar, S., Sain, A., Kesaria, M. and Shivaprasad, S. M. 2012. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters 101(13), pp. 132109. (10.1063/1.4755775)
- Kumar, P., Tangi, M., Shetty, S., Kesaria, M. and Shivaprasad, S. M. 2012. Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer. MRS Online Proceedings Library 1411, pp. 57-62. (10.1557/opl.2012.760)
- Mittra, J. et al. 2012. Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film. Materials Science Forum 710, pp. 757-761. (10.4028/www.scientific.net/MSF.710.757)
- Kesaria, M., Shetty, S. and Shivaprasad, S. M. 2011. Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire. Crystal Growth and Design 11(11), pp. 4900-4903. (10.1021/cg200749w)
- Kesaria, M., Shetty, S., Cohen, P. and Shivaprasad, S. 2011. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin 46(11), pp. 1811. (10.1016/j.materresbull.2011.07.043)
- Kesaria, M. and Shivaprasad, S. M. 2011. Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters 99(14), pp. 143105. (10.1063/1.3646391)
- Kesaria, M., Shetty, S. and Shivaprasad, S. 2011. Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth 326(1), pp. 191-194. (10.1016/j.jcrysgro.2011.01.095)
- Kesaria, M., Kumar, M., Govind, . and Shivaprasad, S. 2009. Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science 256(2), pp. 576. (10.1016/j.apsusc.2009.08.064)
- Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V. and Shivaprasad, S. M. 2018. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters 101(13), pp. 131605. (10.1063/1.4751986)
- Keen, J., Repiso, E., Lu, Q., Kesaria, M., Marshall, A. and Krier, A. 2018. Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared. Infrared Physics & technology 93, pp. 375-380. (10.1016/j.infrared.2018.08.001)
- Paola, D. et al. 2018. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials 6, pp. 1700492-1700499. (10.1002/adom.201700492)
- Keen, J. A., Lane, D., Kesaria, M., Marshall, A. R. J. and Krier, A. 2018. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics 51(7), pp. 075103-075112. (10.1088/1361-6463/aaa60e/meta)
- Velichko, A. et al. 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109(18), article number: 182115. (10.1063/1.4967381)
- Di Paola, D. M. et al. 2016. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports 6, article number: 32039. (10.1038/srep32039)
- Negi, D., Loukya, B., Dileep, K., Kesaria, M., Kumar, N. and Datta, R. 2013. Characterization of structure and magnetism in Zn1-x(Cox/Mnx)O epitaxial thin films as a function of composition. Superlattices and Microstructures 63, pp. 289. (10.1016/j.spmi.2013.09.007)
- Thakur, V., Kesaria, M. and Shivaprasad, S. 2013. Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications 171, pp. 8. (10.1016/j.ssc.2013.07.012)
- Shetty, S., Kesaria, M., Ghatak, J. and Shivaprasad, S. M. 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13(6), pp. 2407. (10.1021/cg4000928)
- Kumar, P., Tangi, M., Shetty, S., Kesaria, M. and Shivaprasad, S. M. 2012. Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer. MRS Online Proceedings Library 1411, pp. 57-62. (10.1557/opl.2012.760)
- Kesaria, M., Shetty, S. and Shivaprasad, S. M. 2011. Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire. Crystal Growth and Design 11(11), pp. 4900-4903. (10.1021/cg200749w)
- Kesaria, M., Shetty, S., Cohen, P. and Shivaprasad, S. 2011. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin 46(11), pp. 1811. (10.1016/j.materresbull.2011.07.043)
- Kesaria, M. and Shivaprasad, S. M. 2011. Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters 99(14), pp. 143105. (10.1063/1.3646391)
- Kesaria, M., Shetty, S. and Shivaprasad, S. 2011. Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth 326(1), pp. 191-194. (10.1016/j.jcrysgro.2011.01.095)
- Kesaria, M., Kumar, M., Govind, . and Shivaprasad, S. 2009. Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science 256(2), pp. 576. (10.1016/j.apsusc.2009.08.064)
Ymchwil
Mae ffowndri M.I.N.D (synwyryddion is-goch Manoj) yn dîm o:
Tyfwyr crisial: Defnyddio'r O'r radd flaenaf Veeco Gen 930 Epitaxy Trawst Moleciwlaidd (MBE) ar gyfer datblygu epitacsi deunyddiau a dyfeisiau Lled-ddargludyddion Cyfansawdd nofel.
Arbenigwyr ffugio dyfeisiau: Dylunio, efelychu, model a ffugio synwyryddion mewn fformat picsel ac arae sengl gan ddefnyddio ystafell lân dosbarth 10, 100 a 1000.
Mae tîm MIND yn perfformio epitaxy, efelychu damcaniaethol, ffugio / prosesu hetero-strwythurau dimensiwn isel, gwifrau cwantwm 1D, dotiau (QD), ffynnon cwantwm (QW), Quantum Wells cymhleth CQW -math II haen dan straen super-dellt (T2SL) ac aloion Digidol (ES). Fabricate synwyryddion sy'n gweithio yn NIR i gyfundrefn tonfedd LWIR ar gyfer synhwyro, canfod, delweddu thermol.
Prosiectau parhaus:
1) Integreiddio Electroneg a Ffotoneg Monolithig EPSRC Gan ddefnyddio III-nitridau ar gyfer Telecoms
2) Innovate UK - Technoleg Synhwyrydd Electro-optig Quantum (QuEoD)
3) DASA (ACC20244551) Math II superlattice Photodiode array ar gyfer synhwyro is-goch
Prosiectau wedi'u cwblhau:
3) Horizon 2020 EU- MSCA-ITN-2020- Rhwydwaith Hyfforddi Arloesol - Technolegau Lled-ddargludyddion Meintiol-Cwantwm Defnyddio Antimony
Meintioli · Rhwydwaith hyfforddi ar ddeunyddiau lled-ddargludyddion sy'n seiliedig ar antimoni
Cyfleusterau:
a) A.D.E (advanced Detectors Epitaxy) Lareithio
Labordy ADE
Mae ganddo siambr ddeuol o'r radd flaenaf Veeco Gen 930 MBE adweithyddion ymroddedig i epitaxy III-As (Sb) a III-N. Mae III-As (Sb) wedi'i gyfarparu â grŵp falf parth triphlyg V craceri, ac mae III-N wedi'i osod â ffynhonnell plasma Nitrogen r-f. Mae gan y ddau adweithydd wresogyddion swbstrad 3 "gyda gweithrediad tymheredd 1200C a ~ rheolaeth 2-radd. Mae'r adweithyddion hefyd yn ddelfrydol ar gyfer datblygu gwanedig sy'n cynnwys Bi, B a N, ac aloion camgyfatebol iawn (HMA).
b) A.D.C (haractereiddio Cetector Dwedi'i dvanced) Lareithio
Mae labordy ADC yn cynnal cyfleuster nodweddu synhwyrydd cyflawn gydag offer nodweddu trydanol (picoammeter, mesurydd LCR, dadansoddwr dyfeisiau lled-ddargludyddion, sbectrwm a dadansoddwyr rhwydwaith, mesuryddion ffigur sŵn a dadansoddwr rhwydwaith 50 GHz), FTIR-PL a gosodiad llun-ymateb a gorsaf chwiliedydd cryogenig.
Gall diffractomedr pelydr-X cydraniad uchel PANalytical XPert (HRXRD) nodweddu wafer 8 modfedd.
Addysgu
Rwy'n gymrawd o'r Academi Addysg Uwch (FHEA), y Deyrnas Unedig.
Trefnydd Modiwl (MO) - Dyfeisiau lled-ddargludyddion dimensiwn isel (MPhys PX4221 + MSc PXT 126) - L7
Trefnydd Modiwl (MO) - Ffiseg Laser ac Opteg Anlinellol (PX 3243) - L6
Prosiect Ymchwil Blwyddyn 4 (MPhys) / MSc (PX4310/PXT999)
Prosiect Ffiseg Israddedig Blwyddyn 3 (PX3315)
Tiwtor Blwyddyn 1
Bywgraffiad
Swyddi cyfredol yn yr Ysgol Ffiseg a Seryddiaeth
Goruchwyliwr Diogelu Ymbelydredd (RPS) (2023 ymlaen)
Aelod o'r Pwyllgor Moeseg Ymchwil Ysgol (SREC) (2023 ymlaen)
Uwch Ddarlithydd/Athro Cyswllt (Awst 2021 ymlaen)
Aelod o Grŵp Ymgysylltu Indiaidd PSE (2020 ymlaen)
Arweinydd Grŵp y M.IN. D ffowndri (2020 ymlaen)
Cynrychiolydd allgymorth - Grŵp Ffiseg Mater Cyddwysedig (CMP) (2019 ymlaen)
Fy arbenigedd:
Ers 2006, rwyf wedi defnyddio technegau gwactod uwch-uchel a thechnegau Epitaxy Moleciwlaidd Moleciwlaidd (MBE) o'r radd flaenaf i nanostructures a heterostructures dimensiwn isel sy'n seiliedig ar GaN a Gasb gyda ffenomenau cwantwm gwaelodol.
O 2012 ymlaen, ehangais fy arbenigedd i ffugio dyfeisiau mewn ystafelloedd glanhau dosbarth 100. Rwyf wedi ffugio nifer o ddyfeisiau optoelectroneg, megis lles muti-cwantwm a deuodau allyrru golau (LED), deuodau twnelu cyseiniant rhwystr dwbl (DBRT), thermoffotofoltäig (TPV), ffotodiodes, ffotodiodes avalanche (APD), a'u araeau.
Anrhydeddau a dyfarniadau
2021 – Cymrodoriaeth yr Academi Addysg Uwch (FHEA), U.K., a ddyfarnwyd gan Advanced Higher Education Academy, UK.
1995 - Cymrodoriaeth mewn Gwyddorau Ffisegol, a ddyfarnwyd gan y Cyngor Ymchwil Gwyddonol a Diwydiannol (CSIR), India.
Aelodaethau proffesiynol
Member of IOP
Member of IEEE
Safleoedd academaidd blaenorol
2021 ymlaen: Uwch Ddarlithydd/Athro Cyswllt, Ysgol Ffiseg a Seryddiaeth, Prifysgol Caerdydd.
2018–2021: Darlithydd/Athro Cynorthwyol, Ysgol Ffiseg a Seryddiaeth, Prifysgol Caerdydd.
2013–2018: Uwch Gydymaith Ymchwil ym Mhrifysgol Lancaster a Phrifysgol Sheffield.
2012–2013: Gwyddonydd Ymchwil, Prifysgol Houston, Texas a Synwyryddion Micro Integredig Inc (Houston)
2008–2012: Uwch Gymrawd Ymchwil a Chydymaith Ymchwil, Canolfan Ryngwladol ar gyfer Gwyddor Deunydd, JNCASR, Bangalore, India
2006–2008: Cymrawd Ymchwil Iau, Labordy Ffisegol Cenedlaethol, Delhi Newydd, India
Rwyf wedi gweithio fel uwch gydymaith ymchwil ar brosiectau EPSRC (cyn 2018)
EP / J015849/1 "InAsNSb Gwanedig Deunyddiau Nitride ar gyfer Dyfeisiau a Chymwysiadau Is-goch Canol"
EP/M013707/1 "TPVs ar gyfer Adfer Gwres Gwastraff mewn Gweithgynhyrchu Ynni-Gwydn".
Ymrwymiadau siarad cyhoeddus
1. Siaradwr Gwahoddedig yn IQARUS, San Sebastian, Sbaen.03-07-2024 (yn bersonol).
Gweithdy Terfynol Meintiol @San Sebastian (Sbaen) · Meintioli
2. Siaradwr gwadd-QUNTIMONY- Cyfarfod adolygu 2il AAB, Lancaster, Ebrill 19 i 21. (yn bersonol).
2il Cyfarfod AAB a Hyfforddiant Sgiliau Trosglwyddadwy · Meintioli
3. Gwahodd fel siaradwr yn IOP, Rhaglen Technoleg Diwydiant - Llun 2022, Nottingham (Awst 30 i Fedi 2)
4. Siaradwr gwadd- Gweithdy Rhyngwladol XXI ar Ffiseg Dyfeisiau Lled-ddargludyddion (IWPSD) 2021, Delhi Newydd (ar-lein).
5. Siaradwr gwadd- Cynhadledd Ryngwladol ar Electroneg sy'n Dod i'r Amlwg (ICEE-2020), Delhi Newydd 26-28 Tachwedd 2020. (ar-lein)
Sgyrsiau Estyn Allan mewn Ysgolion -
1. Y dechnoleg y tu ôl i'n technoleg- archwilio i fyd lled-ddargludyddion cyfansawdd, 28-06-2024 (Caerdydd)
2. Ysgol Uwchradd Llanwern, Casnewydd, 27-04-2023
3. Ysgol Howell, Caerdydd 16-02-2023
Darlith y Coleg: Dr Manoj Kesaria | Coleg Co-ed Howell (gdst.net)
Pwyllgorau ac adolygu
Golygydd gwadd - Adroddiadau Gwyddonol - Casgliad - Superlattices "Superlattices" (cardiff.ac.uk)
Aelod o'r Bwrdd Golygyddol - Nanotechnoleg - Adroddiadau Gwyddonol Golygyddion | Adroddiadau Gwyddonol (cardiff.ac.uk)
Golygydd cyd-westai: Rhifyn arbennig IET ar "Electroneg Opto-Integredig Lled-ddargludyddion 2022 (SOE 2022)
Adolygydd Grant Ymchwil, EPSRC (2018 ymlaen)
Adolygydd Journal (2013 ymlaen):
- Cyfnodolyn ymchwil natur: Adroddiadau gwyddonol (Aelod Bwrdd Golygyddol- Ffiseg- Nanodechnoleg)
- Cylchgronau AIP: Llythyrau Ffiseg Gymhwysol, Journal of Ffiseg Gymhwysol, AIP Advances, Journal of Vaccum Science and Technology (B),
- Cyfnodolion IOP: Materials Research Express a Semiconductor Science and Technology
- Cyfnodolion Springer: Journal of Material Science, Nanoscale Research Letters, and
- Statws ffiseg Wiley Solidi B: Ffiseg Wladwriaeth Solid Sylfaenol
Meysydd goruchwyliaeth
Mae gen i ddiddordeb mewn goruchwylio myfyrwyr PhD sydd â diddordeb mewn
UV-VIS i LWIR III-Nitrides, III-Antimonides a newydd gwanedig materals.for-
i) Synwyryddion - Ffotodiodes, Avalanche Photodiode (APD), Photodiodes Avalanche Sengl (SPAD)
ii) Strwythurau hetero-hetero-cwantwm dimensiwn isel
iii) Thermoffotofoltäig (TPV) a thermoffotofoltäig solar (SPTV)
Goruchwyliaeth gyfredol
Contact Details
+44 29208 75255
Y Ganolfan Ymchwil Drosiadol, Ystafell TRH 1.05 , Heol Maindy, Cathays, Caerdydd, CF24 4HQ
Adeiladau'r Frenhines - Adeilad y Gogledd, Ystafell N0.09, 5 The Parade, Heol Casnewydd, Caerdydd, CF24 3AA
Themâu ymchwil
Arbenigeddau
- Lled-ddargludyddion cyfansawdd
- Thermoffotofoltäig (TPV)
- Deuodau Allyrru Golau (LED)
- Synwyryddion