![Manoj Kesaria BSc, MSc, PhD, FHEA](https://profiles-cardiff.imgix.net/attachments/3764?w=200&h=200&auto=format&crop=faces&fit=crop&q=90")
Dr Manoj Kesaria
(he/him)
BSc, MSc, PhD, FHEA
Senior Lecturer
Condensed Matter and Photonics Group
School of Physics and Astronomy
- KesariaM@cardiff.ac.uk
- +44 29208 75255
-
Translational Research Hub, Room TRH 1.05 , Maindy Road, Cathays, Cardiff, CF24 4HQ
Queen's Buildings - North Building, Room N0.09, 5 The Parade, Newport Road, Cardiff, CF24 3AA
- Available for postgraduate supervision
Overview
M.IN.D (Manoj Infrared Detector's) Foundry (Est: 2020)
Research and development of detectors with Low-dimensional Heterostructures
MIND Foundry - A team of researchers and scientists developing novel GaN- and GaSb-based compound semiconductor detectors.
If you want to collaborate with the MIND foundry, don't hesitate to contact me...
News:
Open position in MIND foundry:
Publication
2023
- Cao, P. et al. 2023. Surface passivation of random alloy AlGaAsSb avalanche photodiode. Electronics Letters 59(18), article number: e12956. (10.1049/ell2.12956)
- Alshahrani, D. et al. 2023. Effect of interfacial schemes on the optical and structural properties of InAs/GaSb type-ii superlattices. ACS Applied Materials and Interfaces 15(6), pp. 8624-8635. (10.1021/acsami.2c19292)
2022
- Kwan, D. C. M. et al. 2022. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. Scientific Reports 12(1), article number: 11616. (10.1038/s41598-022-15538-3)
- Alshahrani, D. O., Kesaria, M., Anyebe, E. A., Srivastava, V. and Huffaker, D. L. 2022. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors. Advanced Photonics Research 3(2), article number: 2100094. (10.1002/adpr.202100094)
2021
- Kwan, D., Kesaria, M., Anyebe, E. and Huffaker, D. 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 116, article number: 103756. (10.1016/j.infrared.2021.103756)
- Kesaria, M., Alshahrani, D., Kwan, D., Anyebe, E. and Srivastava, V. 2021. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application. Materials Research Bulletin 142, article number: 111424. (10.1016/j.materresbull.2021.111424)
- Kwan, D. C. M., Kesaria, M., Anyebe, E. A., Alshahrani, D. O., Delmas, M., Liang, B. L. and Huffaker, D. L. 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118(20), article number: 203102. (10.1063/5.0045703)
- Anyebe, E. A. and Kesaria, M. 2021. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 2(4), pp. 688-711. (10.1002/nano.202000142)
- Ahmed, J. et al. 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57(2), article number: 4500206. (10.1109/JQE.2021.3058356)
2020
- Anyebe, E. A., Kesaria, M., Sanchez, A. M. and Zhuang, Q. 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126(6), article number: 427. (10.1007/s00339-020-03609-z)
- Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. and Patanè, A. 2020. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters 116(14), article number: 142108. (10.1063/5.0002407)
2019
- Anyebe, E. A. and Kesaria, M. 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9, article number: 17665. (10.1038/s41598-019-54047-8)
- Sharpe, M. K. et al. 2019. A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics 126(12), article number: 125706. (10.1063/1.5109653)
2018
- Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V. and Shivaprasad, S. M. 2018. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters 101(13), pp. 131605. (10.1063/1.4751986)
- Keen, J., Repiso, E., Lu, Q., Kesaria, M., Marshall, A. and Krier, A. 2018. Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared. Infrared Physics & technology 93, pp. 375-380. (10.1016/j.infrared.2018.08.001)
- Paola, D. et al. 2018. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials 6, pp. 1700492-1700499. (10.1002/adom.201700492)
- Keen, J. A., Lane, D., Kesaria, M., Marshall, A. R. J. and Krier, A. 2018. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics 51(7), pp. 075103-075112. (10.1088/1361-6463/aaa60e/meta)
2016
- Velichko, A. et al. 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109(18), article number: 182115. (10.1063/1.4967381)
- Kesaria, M., de la Mare, M. and Krier, A. 2016. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics 49(43), article number: 435107. (10.1088/0022-3727/49/43/435107)
- Di Paola, D. M. et al. 2016. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports 6, article number: 32039. (10.1038/srep32039)
- Debnath, A., Gandhi, J. S., Kesaria, M., Pillai, R., Starikov, D. and Bensaoula, A. 2016. Effect of N-2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy. Journal of Applied Physics 119(10), article number: 104302. (10.1063/1.4943179)
2015
- Krier, A. et al. 2015. Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics and Technology 73, pp. 126-129. (10.1016/j.infrared.2015.09.011)
- Birindelli, S. et al. 2015. Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology 30(10), article number: 105030. (10.1088/0268-1242/30/10/105030)
- Wheatley, R. et al. 2015. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters 106(23), article number: 232105. (10.1063/1.4922590)
- Bhasker, H. P., Thakur, V., Kesaria, M., Shivaprasad, S. M. and Dhar, S. 2015. Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy. AIP Conference Proceedings 1583, pp. 252-258. (10.1063/1.4865647)
- Kesaria, M., Birindelli, S., Velichko, A. V., Zhuang, Q. D., Patane, A., Capizzi, M. and Krier, A. 2015. In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology 68, pp. 138-142. (10.1016/j.infrared.2014.11.016)
2014
- Anyebe, E. A., Zhuang, Q., Kesaria, M. and Krier, A. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29(8), article number: 85010. (10.1088/0268-1242/29/8/085010)
- Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. and Krier, A. 2014. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. Semiconductor Science and Technology 29(7), article number: 75011. (10.1088/0268-1242/29/7/075011)
2013
- Negi, D., Loukya, B., Dileep, K., Kesaria, M., Kumar, N. and Datta, R. 2013. Characterization of structure and magnetism in Zn1-x(Cox/Mnx)O epitaxial thin films as a function of composition. Superlattices and Microstructures 63, pp. 289. (10.1016/j.spmi.2013.09.007)
- Thakur, V., Kesaria, M. and Shivaprasad, S. 2013. Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications 171, pp. 8. (10.1016/j.ssc.2013.07.012)
- Shetty, S., Kesaria, M., Ghatak, J. and Shivaprasad, S. M. 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13(6), pp. 2407. (10.1021/cg4000928)
2012
- Bhasker, H. P., Dhar, S., Sain, A., Kesaria, M. and Shivaprasad, S. M. 2012. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters 101(13), pp. 132109. (10.1063/1.4755775)
- Kumar, P., Tangi, M., Shetty, S., Kesaria, M. and Shivaprasad, S. M. 2012. Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer. MRS Online Proceedings Library 1411, pp. 57-62. (10.1557/opl.2012.760)
- Mittra, J. et al. 2012. Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film. Materials Science Forum 710, pp. 757-761. (10.4028/www.scientific.net/MSF.710.757)
2011
- Kesaria, M., Shetty, S. and Shivaprasad, S. M. 2011. Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire. Crystal Growth and Design 11(11), pp. 4900-4903. (10.1021/cg200749w)
- Kesaria, M., Shetty, S., Cohen, P. and Shivaprasad, S. 2011. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin 46(11), pp. 1811. (10.1016/j.materresbull.2011.07.043)
- Kesaria, M. and Shivaprasad, S. M. 2011. Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters 99(14), pp. 143105. (10.1063/1.3646391)
- Kesaria, M., Shetty, S. and Shivaprasad, S. 2011. Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth 326(1), pp. 191-194. (10.1016/j.jcrysgro.2011.01.095)
2009
- Kesaria, M., Kumar, M., Govind, . and Shivaprasad, S. 2009. Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science 256(2), pp. 576. (10.1016/j.apsusc.2009.08.064)
Articles
- Cao, P. et al. 2023. Surface passivation of random alloy AlGaAsSb avalanche photodiode. Electronics Letters 59(18), article number: e12956. (10.1049/ell2.12956)
- Alshahrani, D. et al. 2023. Effect of interfacial schemes on the optical and structural properties of InAs/GaSb type-ii superlattices. ACS Applied Materials and Interfaces 15(6), pp. 8624-8635. (10.1021/acsami.2c19292)
- Kwan, D. C. M. et al. 2022. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. Scientific Reports 12(1), article number: 11616. (10.1038/s41598-022-15538-3)
- Alshahrani, D. O., Kesaria, M., Anyebe, E. A., Srivastava, V. and Huffaker, D. L. 2022. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors. Advanced Photonics Research 3(2), article number: 2100094. (10.1002/adpr.202100094)
- Kwan, D., Kesaria, M., Anyebe, E. and Huffaker, D. 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 116, article number: 103756. (10.1016/j.infrared.2021.103756)
- Kesaria, M., Alshahrani, D., Kwan, D., Anyebe, E. and Srivastava, V. 2021. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application. Materials Research Bulletin 142, article number: 111424. (10.1016/j.materresbull.2021.111424)
- Kwan, D. C. M., Kesaria, M., Anyebe, E. A., Alshahrani, D. O., Delmas, M., Liang, B. L. and Huffaker, D. L. 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118(20), article number: 203102. (10.1063/5.0045703)
- Anyebe, E. A. and Kesaria, M. 2021. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 2(4), pp. 688-711. (10.1002/nano.202000142)
- Ahmed, J. et al. 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57(2), article number: 4500206. (10.1109/JQE.2021.3058356)
- Anyebe, E. A., Kesaria, M., Sanchez, A. M. and Zhuang, Q. 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126(6), article number: 427. (10.1007/s00339-020-03609-z)
- Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. and Patanè, A. 2020. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters 116(14), article number: 142108. (10.1063/5.0002407)
- Anyebe, E. A. and Kesaria, M. 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9, article number: 17665. (10.1038/s41598-019-54047-8)
- Sharpe, M. K. et al. 2019. A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics 126(12), article number: 125706. (10.1063/1.5109653)
- Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V. and Shivaprasad, S. M. 2018. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters 101(13), pp. 131605. (10.1063/1.4751986)
- Keen, J., Repiso, E., Lu, Q., Kesaria, M., Marshall, A. and Krier, A. 2018. Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared. Infrared Physics & technology 93, pp. 375-380. (10.1016/j.infrared.2018.08.001)
- Paola, D. et al. 2018. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials 6, pp. 1700492-1700499. (10.1002/adom.201700492)
- Keen, J. A., Lane, D., Kesaria, M., Marshall, A. R. J. and Krier, A. 2018. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics 51(7), pp. 075103-075112. (10.1088/1361-6463/aaa60e/meta)
- Velichko, A. et al. 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109(18), article number: 182115. (10.1063/1.4967381)
- Kesaria, M., de la Mare, M. and Krier, A. 2016. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics 49(43), article number: 435107. (10.1088/0022-3727/49/43/435107)
- Di Paola, D. M. et al. 2016. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports 6, article number: 32039. (10.1038/srep32039)
- Debnath, A., Gandhi, J. S., Kesaria, M., Pillai, R., Starikov, D. and Bensaoula, A. 2016. Effect of N-2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy. Journal of Applied Physics 119(10), article number: 104302. (10.1063/1.4943179)
- Krier, A. et al. 2015. Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics and Technology 73, pp. 126-129. (10.1016/j.infrared.2015.09.011)
- Birindelli, S. et al. 2015. Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology 30(10), article number: 105030. (10.1088/0268-1242/30/10/105030)
- Wheatley, R. et al. 2015. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters 106(23), article number: 232105. (10.1063/1.4922590)
- Bhasker, H. P., Thakur, V., Kesaria, M., Shivaprasad, S. M. and Dhar, S. 2015. Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy. AIP Conference Proceedings 1583, pp. 252-258. (10.1063/1.4865647)
- Kesaria, M., Birindelli, S., Velichko, A. V., Zhuang, Q. D., Patane, A., Capizzi, M. and Krier, A. 2015. In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology 68, pp. 138-142. (10.1016/j.infrared.2014.11.016)
- Anyebe, E. A., Zhuang, Q., Kesaria, M. and Krier, A. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29(8), article number: 85010. (10.1088/0268-1242/29/8/085010)
- Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M., Beanland, R. and Krier, A. 2014. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. Semiconductor Science and Technology 29(7), article number: 75011. (10.1088/0268-1242/29/7/075011)
- Negi, D., Loukya, B., Dileep, K., Kesaria, M., Kumar, N. and Datta, R. 2013. Characterization of structure and magnetism in Zn1-x(Cox/Mnx)O epitaxial thin films as a function of composition. Superlattices and Microstructures 63, pp. 289. (10.1016/j.spmi.2013.09.007)
- Thakur, V., Kesaria, M. and Shivaprasad, S. 2013. Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications 171, pp. 8. (10.1016/j.ssc.2013.07.012)
- Shetty, S., Kesaria, M., Ghatak, J. and Shivaprasad, S. M. 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13(6), pp. 2407. (10.1021/cg4000928)
- Bhasker, H. P., Dhar, S., Sain, A., Kesaria, M. and Shivaprasad, S. M. 2012. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters 101(13), pp. 132109. (10.1063/1.4755775)
- Kumar, P., Tangi, M., Shetty, S., Kesaria, M. and Shivaprasad, S. M. 2012. Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer. MRS Online Proceedings Library 1411, pp. 57-62. (10.1557/opl.2012.760)
- Mittra, J. et al. 2012. Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film. Materials Science Forum 710, pp. 757-761. (10.4028/www.scientific.net/MSF.710.757)
- Kesaria, M., Shetty, S. and Shivaprasad, S. M. 2011. Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire. Crystal Growth and Design 11(11), pp. 4900-4903. (10.1021/cg200749w)
- Kesaria, M., Shetty, S., Cohen, P. and Shivaprasad, S. 2011. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin 46(11), pp. 1811. (10.1016/j.materresbull.2011.07.043)
- Kesaria, M. and Shivaprasad, S. M. 2011. Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters 99(14), pp. 143105. (10.1063/1.3646391)
- Kesaria, M., Shetty, S. and Shivaprasad, S. 2011. Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth 326(1), pp. 191-194. (10.1016/j.jcrysgro.2011.01.095)
- Kesaria, M., Kumar, M., Govind, . and Shivaprasad, S. 2009. Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science 256(2), pp. 576. (10.1016/j.apsusc.2009.08.064)
- Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V. and Shivaprasad, S. M. 2018. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters 101(13), pp. 131605. (10.1063/1.4751986)
- Keen, J., Repiso, E., Lu, Q., Kesaria, M., Marshall, A. and Krier, A. 2018. Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared. Infrared Physics & technology 93, pp. 375-380. (10.1016/j.infrared.2018.08.001)
- Paola, D. et al. 2018. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials 6, pp. 1700492-1700499. (10.1002/adom.201700492)
- Keen, J. A., Lane, D., Kesaria, M., Marshall, A. R. J. and Krier, A. 2018. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics 51(7), pp. 075103-075112. (10.1088/1361-6463/aaa60e/meta)
- Velichko, A. et al. 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109(18), article number: 182115. (10.1063/1.4967381)
- Di Paola, D. M. et al. 2016. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports 6, article number: 32039. (10.1038/srep32039)
- Negi, D., Loukya, B., Dileep, K., Kesaria, M., Kumar, N. and Datta, R. 2013. Characterization of structure and magnetism in Zn1-x(Cox/Mnx)O epitaxial thin films as a function of composition. Superlattices and Microstructures 63, pp. 289. (10.1016/j.spmi.2013.09.007)
- Thakur, V., Kesaria, M. and Shivaprasad, S. 2013. Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications 171, pp. 8. (10.1016/j.ssc.2013.07.012)
- Shetty, S., Kesaria, M., Ghatak, J. and Shivaprasad, S. M. 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13(6), pp. 2407. (10.1021/cg4000928)
- Kumar, P., Tangi, M., Shetty, S., Kesaria, M. and Shivaprasad, S. M. 2012. Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer. MRS Online Proceedings Library 1411, pp. 57-62. (10.1557/opl.2012.760)
- Kesaria, M., Shetty, S. and Shivaprasad, S. M. 2011. Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire. Crystal Growth and Design 11(11), pp. 4900-4903. (10.1021/cg200749w)
- Kesaria, M., Shetty, S., Cohen, P. and Shivaprasad, S. 2011. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin 46(11), pp. 1811. (10.1016/j.materresbull.2011.07.043)
- Kesaria, M. and Shivaprasad, S. M. 2011. Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters 99(14), pp. 143105. (10.1063/1.3646391)
- Kesaria, M., Shetty, S. and Shivaprasad, S. 2011. Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth 326(1), pp. 191-194. (10.1016/j.jcrysgro.2011.01.095)
- Kesaria, M., Kumar, M., Govind, . and Shivaprasad, S. 2009. Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science 256(2), pp. 576. (10.1016/j.apsusc.2009.08.064)
Research
M.I.N.D (Manoj Infrared Detector's) foundry is a team of:
Crystal growers: Utilize the state-of-the-art Veeco Gen 930 Molecular Beam Epitaxy (MBE) for developing the epitaxy of novel Compound Semiconductors materials and devices.
Device fabrication experts: Design, simulate, model and fabricate detectors in single-pixel and array format using a class 10, 100 and 1000 cleanroom.
MIND team perform epitaxy, theoretical simulation, fabrication/processing of low dimensional hetero-structures, quantum 1D wires, dots (QD), Quantum well (QW), Complex Quantum Wells CQW -Type-II strained layer super-lattice (T2SL) and Digital alloys (ES). Fabricate detectors working in NIR to LWIR wavelength regime for sensing, detection, thermal imaging.
Ongoing research projects:
1) EPSRC Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms
2) Innovate UK - Quantum Electro-optic Detector Technology (QuEoD)
3) Horizon 2020 EU- MSCA-ITN-2020- Innovative Training Network - QUANTIMONY-Quantum Semiconductor Technologies Exploiting Antimony
4. DASA (ACC20244551) Type-II superlattice Photodiode array for infrared sensing
Facilities:
a) A.D.E (Advanced Detectors Epitaxy) Laboratory
ADE laboratory has state-of-the-art Veeco Gen 930 MBE reactors dedicated to III-As(Sb) epitaxy with triple-zone valve group V crackers equipped with 3" substrate heater with 12000C temperature operation and ~ 2-degree control. The reactors also ideally suited for undertaking the growth of novel Bi, N containing dilute bismides, dilute Nitrides and highly mismatch alloys (HMA). A Pananlytical XPert high-resolution x-ray diffractometer (HRXRD) with fast 8-inch wafers reciprocal space maps (RSM) capability.
b) A.D.C (Advanced Detector Characterisation) Laboratory
ADC laboratory host a complete detector characterisation facility with electrical characterisation tools (picoammeter, LCR meter, semiconductor device analyser, spectrum, and network analysers, noise figure meters and 50 GHz network analyser), FTIR-PL and photo-response set-up and a cryogenic probe station.
Teaching
I am a fellow of the Higher Education Academy (FHEA), UK.
Module Organiser (MO) 2019/20 onward
Low dimensional Semiconductor Devices (MPhys PX4221 + MSc PXT 126 ) - L7
Module Organiser (DMO), 2024/25 onward
Laser Physics and Non-Linear Optics (PX 3243) - L6
Year 4 ( MPhys)/MSc Research Project (PX4310/PXT999)
Year 3 undergraduate physics project (PX3315)
Year 1 Tutor
Biography
Current roles in the School of Physics and Astronomy
Radiation Protection Supervisor (RPS) (2023 onward)
Member of School Research Ethic Committee (SREC) (2023 onward)
Senior Lecturer/Associate Professor (August 2021 onward)
Member of PSE Indian Engagement group (2020 onward)
Group leader of the M.IN. D foundry (2020 onward)
Outreach representative - Condensed Matter Physics (CMP) group (2019 onward)
My Expertise:
Since 2006, I have used ultra-high vacuum techniques and state-of-the-art Molecular Beam Epitaxy (MBE) techniques to band-engineer GaN and GaSb-based low-dimensional nanostructures and heterostructures with underlying quantum phenomena.
From 2014 onward, I expanded my expertise into device fabrication in class 100 cleanrooms. I have fabricated muti-quantum well-based light-emitting diodes, double barrier resonant tunnelling diodes, photodiodes, avalanche photodiodes, and their arrays.
Honours and awards
2021 – Fellowship of Higher Education Academy (FHEA), U.K., awarded by Advanced Higher Education Academy, UK.
1995 – Fellowship in Physical Sciences, awarded by Council for Scientific and Industrial Research (CSIR), India.
Professional memberships
Member of IOP
Member of IEEE
Academic positions
2018– 2021: Lecturer/Assistant Professor, School of Physics and Astronomy, Cardiff University.
2013–2018: Senior Research Associate at Lancaster University & University of Sheffield.
2012–2013: Research Scientist, University of Houston, Texas and Integrated Micro Sensors Inc (Houston)
2008–2012: Senior Research Fellow and Research Associate, International Centre for Material Science, JNCASR, Bangalore, India
2006–2008: Junior Research Fellow, National Physical Laboratory, New Delhi, India
I have worked as a senior research assocate on EPSRC projects (prior to 2018)
EP/J015849/1 "InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications"
EP/M013707/1 "TPVs for Waste Heat Recovery in Energy Resilient Manufacturing".
Speaking engagements
1. Invited Speaker at IQARUS, San Sebastian, Spain.03-07-2024 (in-person).
Quantimony’s Final Workshop @San Sebastian (Spain) · Quantimony
2. Invited speaker- QUNTIMONY- 2nd AAB review Meeting, Lancaster, April 19 to 21.(in-person).
2nd AAB Meeting & Transferable Skills Training · Quantimony
3. Invited as a speaker at IOP, Industry Technology Programme- Photon 2022, Nottingham (August 30 to September 2)
4. Invited speaker- XXI International Workshop on Physics of Semiconductor Devices (IWPSD) 2021, New Delhi (online).
5. Invited speaker- International Conference on Emerging Electronics (ICEE-2020), New Delhi 26-28 Nov. 2020. (online)
Outreach talks at Schools-
1. The Technology Behind Our Technology- Exploration into the World of Compound Semiconductors, 28-06-2024 (Cardiff)
2. Llanwern High School, Newport, 27-04-2023
3. Howell's School, Cardiff 16-02-2023
College Lecture: Dr Manoj Kesaria | Howell's Co-ed College (gdst.net)
Committees and reviewing
Guest editor - Scientific Reports - Collection - "Superlattices" Superlattices (cardiff.ac.uk)
Editorial board Member- Nanotechnology- Scientific Reports. Editors | Scientific Reports (cardiff.ac.uk)
Co-guest editor: IET special issue on " Semiconductor Integrated Opto-Electronics 2022 (SOE 2022)
Reviewer Grant, EPSRC (2018 onward)
Jounral reviewer (2013 onward):
- Nature research journal: Scientific reports (Editorial Board Member- Physics- Nanotechnology)
- AIP journals: Applied Physics Letters, Journal of Applied Physics, AIP Advances, Journal of Vaccum Science and Technology (B),
- IOP journals: Materials Research Express and Semiconductor Science and Technology
- Springer journals: Journal of Material Science, Nanoscale Research Letters and
- Wiley's Physics Status Solidi B: Basic Solid State Physics.
Supervisions
I am interested in supervising PhD students who are interested in
UV-VIS to LWIR III-Nitrides, III-Antimonides and novel dilute materals.for-
i) Detectors - Photodiodes, Avalanche Photodiode (APD), Single Photon Avalanche Photodiodes (SPAD)
ii) Low dimensional quantum hetero-structures
iii) Thermophotovoltaic (TPV) and solar thermophotovoltaic (SPTV)
Current supervision
Ali Al Amri
Research student
Paradeisa O'Dowd Phanis
Graduate Demonstrator
Chen Liu
Research student
Alfie Ross
Graduate Demonstrator
Research themes
Specialisms
- Compound semiconductors
- Thermophotovoltaics (TPV)
- Light Emitting Diodes (LED)
- Detectors