Dr Manoj Kesaria
(he/him)
BSc, MSc, PhD, FHEA
- Available for postgraduate supervision
Teams and roles for Manoj Kesaria
Senior Lecturer
Condensed Matter and Photonics Group
Overview
I am an internationally recognised experimental physicist with over 20 years of experience in semiconductor physics, specialising in surface science, molecular beam epitaxy (MBE), and the growth of Group III-nitride and III-antimonide semiconductor heterostructures. My research combines fundamental quantum physics with advanced materials engineering to develop next-generation optoelectronic devices, including infrared detectors, quantum light emitters and detectors, and high-performance photonic technologies. From theoretical design and simulation through epitaxial growth, characterisation, and device fabrication, I work across the entire innovation pathway, transforming scientific discoveries into technologies with real-world impact.
Through M.IN.D. (Manoj Infrared Quantum Detectors' Foundry), I lead interdisciplinary research on quantum-engineered thin films, low-dimensional semiconductor structures, and novel materials for infrared and quantum-photonic applications. I enjoy collaborating with academic and industrial partners to solve challenging materials and device problems, while helping bridge the gap between fundamental research and commercial innovation. I invite you to explore my research, collaborations, and emerging technologies to discover how quantum-engineered semiconductors are shaping the future of photonics
Publication
2026
- Phanis, P. E. O. et al., 2026. Recent progress and future prospects of LWIR T2SL InAs/GaSb detectors on GaAs. Advanced Photonics Research 7 (7) e70231. (10.1002/adpr.70231)
- Liu, C. et al. 2026. Long‐wavelength infrared InAs/GaSb T2SLs on silicon: a review. Advanced Photonics Research 7 (8) e70246. (10.1002/adpr.70246)
2025
- Gillies, R. et al., 2025. Exploring the use of low-temperature atmospheric plasma polymerization for the reduction of parasitic currents in type-II superlattice devices. Plasma Physics and Controlled Fusion 67 (2) 025012. (10.1088/1361-6587/ada1fa)
2023
- Cao, P. et al., 2023. Surface passivation of random alloy AlGaAsSb avalanche photodiode. Electronics Letters 59 (18) e12956. (10.1049/ell2.12956)
- Alshahrani, D. et al. 2023. Effect of interfacial schemes on the optical and structural properties of InAs/GaSb type-ii superlattices. ACS Applied Materials and Interfaces 15 (6), pp.8624-8635. (10.1021/acsami.2c19292)
2022
- Kwan, D. C. M. et al. 2022. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. Scientific Reports 12 (1) 11616. (10.1038/s41598-022-15538-3)
- Alshahrani, D. O. et al. 2022. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors. Advanced Photonics Research 3 (2) 2100094. (10.1002/adpr.202100094)
2021
- Kwan, D. et al. 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 116 103756. (10.1016/j.infrared.2021.103756)
- Kesaria, M. et al. 2021. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application. Materials Research Bulletin 142 111424. (10.1016/j.materresbull.2021.111424)
- Kwan, D. C. M. et al. 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118 (20) 203102. (10.1063/5.0045703)
- Ahmed, J. et al. 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57 (2) 4500206. (10.1109/JQE.2021.3058356)
- Anyebe, E. A. and Kesaria, M. 2021. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 2 (4), pp.688-711. (10.1002/nano.202000142)
2020
- Anyebe, E. A. et al. 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126 (6) 427. (10.1007/s00339-020-03609-z)
- Di Paola, D. M. et al., 2020. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters 116 (14) 142108. (10.1063/5.0002407)
2019
- Anyebe, E. A. and Kesaria, M. 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9 17665. (10.1038/s41598-019-54047-8)
- Sharpe, M. K. et al., 2019. A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics 126 (12) 125706. (10.1063/1.5109653)
2018
- Kumar, P. et al., 2018. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters 101 (13), pp.131605. (10.1063/1.4751986)
- Keen, J. et al., 2018. Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared. Infrared Physics & technology 93 , pp.375-380. (10.1016/j.infrared.2018.08.001)
- Paola, D. et al., 2018. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials 6 , pp.1700492-1700499. (10.1002/adom.201700492)
- Keen, J. A. et al., 2018. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics 51 (7), pp.075103-075112. (10.1088/1361-6463/aaa60e/meta)
2016
- Velichko, A. et al., 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109 (18) 182115. (10.1063/1.4967381)
- Kesaria, M. , de la Mare, M. and Krier, A. 2016. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics 49 (43) 435107. (10.1088/0022-3727/49/43/435107)
- Di Paola, D. M. et al., 2016. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports 6 32039. (10.1038/srep32039)
- Debnath, A. et al., 2016. Effect of N-2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy. Journal of Applied Physics 119 (10) 104302. (10.1063/1.4943179)
2015
- Krier, A. et al., 2015. Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics and Technology 73 , pp.126-129. (10.1016/j.infrared.2015.09.011)
- Birindelli, S. et al., 2015. Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology 30 (10) 105030. (10.1088/0268-1242/30/10/105030)
- Wheatley, R. et al., 2015. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters 106 (23) 232105. (10.1063/1.4922590)
- Bhasker, H. P. et al., 2015. Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy. AIP Conference Proceedings 1583 , pp.252-258. (10.1063/1.4865647)
- Kesaria, M. et al. 2015. In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology 68 , pp.138-142. (10.1016/j.infrared.2014.11.016)
2014
- Anyebe, E. A. et al. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29 (8) 085010. (10.1088/0268-1242/29/8/085010)
- Lu, Q. et al., 2014. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. Semiconductor Science and Technology 29 (7) 075011. (10.1088/0268-1242/29/7/075011)
2013
- Negi, D. et al., 2013. Characterization of structure and magnetism in Zn1-x(Cox/Mnx)O epitaxial thin films as a function of composition. Superlattices and Microstructures 63 , pp.289. (10.1016/j.spmi.2013.09.007)
- Thakur, V. , Kesaria, M. and Shivaprasad, S. 2013. Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications 171 , pp.8. (10.1016/j.ssc.2013.07.012)
- Shetty, S. et al., 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13 (6), pp.2407. (10.1021/cg4000928)
2012
- Bhasker, H. P. et al., 2012. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters 101 (13), pp.132109. (10.1063/1.4755775)
- Kumar, P. et al., 2012. Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer. MRS Online Proceedings Library 1411 , pp.57-62. (10.1557/opl.2012.760)
- Mittra, J. et al., 2012. Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film. Materials Science Forum 710 , pp.757-761. (10.4028/www.scientific.net/MSF.710.757)
2011
- Kesaria, M. , Shetty, S. and Shivaprasad, S. M. 2011. Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire. Crystal Growth and Design 11 (11), pp.4900-4903. (10.1021/cg200749w)
- Kesaria, M. et al. 2011. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin 46 (11), pp.1811. (10.1016/j.materresbull.2011.07.043)
- Kesaria, M. and Shivaprasad, S. M. 2011. Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters 99 (14), pp.143105. (10.1063/1.3646391)
- Kesaria, M. , Shetty, S. and Shivaprasad, S. 2011. Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth 326 (1), pp.191-194. (10.1016/j.jcrysgro.2011.01.095)
2009
- Kesaria, M. et al. 2009. Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science 256 (2), pp.576. (10.1016/j.apsusc.2009.08.064)
Articles
- Phanis, P. E. O. et al., 2026. Recent progress and future prospects of LWIR T2SL InAs/GaSb detectors on GaAs. Advanced Photonics Research 7 (7) e70231. (10.1002/adpr.70231)
- Liu, C. et al. 2026. Long‐wavelength infrared InAs/GaSb T2SLs on silicon: a review. Advanced Photonics Research 7 (8) e70246. (10.1002/adpr.70246)
- Gillies, R. et al., 2025. Exploring the use of low-temperature atmospheric plasma polymerization for the reduction of parasitic currents in type-II superlattice devices. Plasma Physics and Controlled Fusion 67 (2) 025012. (10.1088/1361-6587/ada1fa)
- Cao, P. et al., 2023. Surface passivation of random alloy AlGaAsSb avalanche photodiode. Electronics Letters 59 (18) e12956. (10.1049/ell2.12956)
- Alshahrani, D. et al. 2023. Effect of interfacial schemes on the optical and structural properties of InAs/GaSb type-ii superlattices. ACS Applied Materials and Interfaces 15 (6), pp.8624-8635. (10.1021/acsami.2c19292)
- Kwan, D. C. M. et al. 2022. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. Scientific Reports 12 (1) 11616. (10.1038/s41598-022-15538-3)
- Alshahrani, D. O. et al. 2022. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors. Advanced Photonics Research 3 (2) 2100094. (10.1002/adpr.202100094)
- Kwan, D. et al. 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 116 103756. (10.1016/j.infrared.2021.103756)
- Kesaria, M. et al. 2021. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application. Materials Research Bulletin 142 111424. (10.1016/j.materresbull.2021.111424)
- Kwan, D. C. M. et al. 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118 (20) 203102. (10.1063/5.0045703)
- Ahmed, J. et al. 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57 (2) 4500206. (10.1109/JQE.2021.3058356)
- Anyebe, E. A. and Kesaria, M. 2021. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 2 (4), pp.688-711. (10.1002/nano.202000142)
- Anyebe, E. A. et al. 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126 (6) 427. (10.1007/s00339-020-03609-z)
- Di Paola, D. M. et al., 2020. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters 116 (14) 142108. (10.1063/5.0002407)
- Anyebe, E. A. and Kesaria, M. 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9 17665. (10.1038/s41598-019-54047-8)
- Sharpe, M. K. et al., 2019. A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics 126 (12) 125706. (10.1063/1.5109653)
- Kumar, P. et al., 2018. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters 101 (13), pp.131605. (10.1063/1.4751986)
- Keen, J. et al., 2018. Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared. Infrared Physics & technology 93 , pp.375-380. (10.1016/j.infrared.2018.08.001)
- Paola, D. et al., 2018. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials 6 , pp.1700492-1700499. (10.1002/adom.201700492)
- Keen, J. A. et al., 2018. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics 51 (7), pp.075103-075112. (10.1088/1361-6463/aaa60e/meta)
- Velichko, A. et al., 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109 (18) 182115. (10.1063/1.4967381)
- Kesaria, M. , de la Mare, M. and Krier, A. 2016. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics 49 (43) 435107. (10.1088/0022-3727/49/43/435107)
- Di Paola, D. M. et al., 2016. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports 6 32039. (10.1038/srep32039)
- Debnath, A. et al., 2016. Effect of N-2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy. Journal of Applied Physics 119 (10) 104302. (10.1063/1.4943179)
- Krier, A. et al., 2015. Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics and Technology 73 , pp.126-129. (10.1016/j.infrared.2015.09.011)
- Birindelli, S. et al., 2015. Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology 30 (10) 105030. (10.1088/0268-1242/30/10/105030)
- Wheatley, R. et al., 2015. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters 106 (23) 232105. (10.1063/1.4922590)
- Bhasker, H. P. et al., 2015. Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy. AIP Conference Proceedings 1583 , pp.252-258. (10.1063/1.4865647)
- Kesaria, M. et al. 2015. In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology 68 , pp.138-142. (10.1016/j.infrared.2014.11.016)
- Anyebe, E. A. et al. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29 (8) 085010. (10.1088/0268-1242/29/8/085010)
- Lu, Q. et al., 2014. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. Semiconductor Science and Technology 29 (7) 075011. (10.1088/0268-1242/29/7/075011)
- Negi, D. et al., 2013. Characterization of structure and magnetism in Zn1-x(Cox/Mnx)O epitaxial thin films as a function of composition. Superlattices and Microstructures 63 , pp.289. (10.1016/j.spmi.2013.09.007)
- Thakur, V. , Kesaria, M. and Shivaprasad, S. 2013. Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications 171 , pp.8. (10.1016/j.ssc.2013.07.012)
- Shetty, S. et al., 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13 (6), pp.2407. (10.1021/cg4000928)
- Bhasker, H. P. et al., 2012. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters 101 (13), pp.132109. (10.1063/1.4755775)
- Kumar, P. et al., 2012. Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer. MRS Online Proceedings Library 1411 , pp.57-62. (10.1557/opl.2012.760)
- Mittra, J. et al., 2012. Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film. Materials Science Forum 710 , pp.757-761. (10.4028/www.scientific.net/MSF.710.757)
- Kesaria, M. , Shetty, S. and Shivaprasad, S. M. 2011. Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire. Crystal Growth and Design 11 (11), pp.4900-4903. (10.1021/cg200749w)
- Kesaria, M. et al. 2011. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin 46 (11), pp.1811. (10.1016/j.materresbull.2011.07.043)
- Kesaria, M. and Shivaprasad, S. M. 2011. Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters 99 (14), pp.143105. (10.1063/1.3646391)
- Kesaria, M. , Shetty, S. and Shivaprasad, S. 2011. Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth 326 (1), pp.191-194. (10.1016/j.jcrysgro.2011.01.095)
- Kesaria, M. et al. 2009. Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science 256 (2), pp.576. (10.1016/j.apsusc.2009.08.064)
Research
Team M.I.N.D Foundry:
Crystal growers: Utilise the dual-chamber, state-of-the-art Veeco Gen 930 Molecular Beam Epitaxy (MBE) system to develop epitaxy of novel Compound Semiconductor materials and devices.
Device fabrication experts: Design, simulate, model and fabricate detectors in single-pixel and array format using a class 10, 100 and 1000 cleanroom.
The MIND team performs epitaxy, theoretical simulation, and fabrication/processing of low-dimensional heterostructures, quantum 1D wires, dots (QD), quantum wells (QW), Complex Quantum Wells (CQW), type-II strained-layer superlattice (T2SL), and short-period superlattices (SPSL). Fabricate detectors working in the NIR to LWIR wavelength regime for sensing, detection, and thermal imaging.
Facilities:
A.D.E (Advanced Detectors Epitaxy) Laboratory-
It has state-of-the-art dual-chamber Veeco Gen 930 MBE reactors dedicated to III-As(Sb) and III-N epitaxy. III-As(Sb) is equipped with triple-zone valve group V crackers, and III-N is fitted with an r-f Nitrogen plasma source. Both reactors have 3" substrate heaters with 1200 °C temperature operation and ~ 2-degree control. The reactors are also facilitated to develop novel Bi-, B-, and N-containing dilute, highly mismatched alloys (HMAs). A Panalytical XPert high-resolution X-ray diffractometer (HRXRD) can characterise an 8-inch wafer.
A.D.C (Advanced Detector Characterisation) Laboratory
It hosts a complete detector characterisation facility with electrical characterisation tools (picometer, LCR meter, semiconductor device analyser, spectrum analyser, network analyser, noise figure meters, and a 50 GHz network analyser), an FTIR-PL and photo-response setup, and a cryogenic probe station.
Research projects successfully completed between 2020 and 2025:
EPSRC Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms
The aim of this project was to establish monolithic III-nitride-on-silicon integration as a transformative platform for scalable quantum technologies. By uniting quantum light sources, high-speed control electronics, and low-loss photonic circuitry within a single, thermally robust material system, it directly addresses fundamental barriers in quantum system integration, including stability, footprint, and energy consumption. Unlike conventional III–V platforms, III-nitrides enable high-power, high-temperature operation with low optical losses, supporting reliable and scalable quantum photonic architectures. The proposed research aligns with UK priorities in quantum technologies by enabling compact, energy-efficient hardware for quantum communication, networking, and photonic quantum computing. Its compatibility with silicon manufacturing routes positions it for translation into high-volume production, strengthening the UK’s capability in advanced semiconductor technologies. This integration strategy has the potential to underpin future quantum infrastructure while reducing the energy burden associated with large-scale data and quantum systems.
The outcome bridges compound semiconductor innovation with silicon-based manufacturing, supporting the UK’s leadership in both quantum technologies and semiconductor systems. It contributes to resilient, energy-efficient digital infrastructure and creates pathways for industrial uptake through established UK compound semiconductor ecosystems. The University of Sheffield (UoS), Cardiff University (CU), and the University of Strathclyde (US) together established pathways for knowledge transfer to commercialisation. UoS translated their research into spin-out Seren Photonics Ltd., Strathclyde’s Technology and Innovation Centre, the UK’s Fraunhofer Centre, and the Compound Semiconductor Centre (CSC), a joint venture with IQE plc that supports open innovation in advanced semiconductor technologies. The team was supported by Dynex Semiconductor, Cambridge GaN Devices, Plessey, and Experior Micro Technologies Ltd. Collectively, this ecosystem ensures strong pathways from research to commercial impact in compound semiconductor and photonics technologies.
Innovate UK - Quantum Electro-optic Detector Technology (QuEoD)
The Quantum Electro-Optic Detector (QuEOD) Technology project unified leading UK academic and industrial partners to advance short-wave-infrared (SWIR) single-photon avalanche detector (SPAD) technologies, which are critical for next-generation quantum applications such as secure communications and quantum sensing. By developing Cadmium Mercury Telluride (CMT) and Gallium Antimonide (GaSb) detectors on Indium Phosphide (InP) platforms and building a sovereign supply chain, the project aims to strengthen the UK’s leadership and commercial capability in the global quantum technology sector. The aim was to overcome critical technological barriers in the development of advanced compound semiconductor detectors, positioning the UK at the forefront of emerging quantum technologies. By enabling breakthroughs in detector performance, the project directly supports the advancement of quantum sensing, secure quantum communications, and next-generation photonic systems.
Central to QuEOD is the creation of a sovereign UK supply chain, ensuring strategic independence in the production and deployment of cutting-edge detector technologies. The initiative focuses on the commercialisation of both CMT and GaSb detector platforms, which are essential for high-speed, high-sensitivity measurements required in quantum-enabled applications such as quantum key distribution, ultra-precise imaging, and environmental monitoring at the quantum limit. The collaboration brings together key industrial players—including Photon Force (project lead), Leonardo, ArQIT, IQE, and QLM—with academic excellence from Heriot-Watt University, Cardiff University, and the University of Sheffield, as well as the Compound Semiconductor Applications Catapult. Together, they form a powerful innovation ecosystem designed to accelerate the translation of quantum research into scalable, real-world technologies, reinforcing the UK’s leadership in the global quantum economy.
Horizon 2020 EU- MSCA-ITN-2020- Innovative Training Network - QUANTIMONY-Quantum Semiconductor Technologies Exploiting Antimony
Quantimony · Training network on antimony-based semiconductor materials
Antimony (Sb)-based III–Sb compound semiconductors have advanced rapidly worldwide over the decades, with strong relevance to next-generation quantum and optoelectronic technologies. Despite their promising quantum and electronic properties, their commercial impact remains limited due to challenges in fabricating high-performance devices. The QUANTIMONY Project addresses this gap by training 14 early-stage researchers in advanced quantum semiconductor science and engineering. The programme spans the full innovation chain—from quantum and device modelling, to material growth, nanoscale characterisation, device fabrication, and performance analysis—bridging fundamental physics with industrial application. It united eight European countries (Spain, France, the UK, Germany, etc) alongside partners in the United States, Taiwan, and Brazil. The project aims to accelerate the translation of III–Sb materials into scalable quantum-enabled electronic and photonic devices, strengthening their pathway toward future quantum technologies and advanced semiconductor markets.
DASA (ACC20244551) Type-II superlattice Photodiode array for infrared sensing
The project aimed to improve infrared detection technology for defence and security applications by developing reliable, low-cost, and non-cooled photodiodes based on type-II InAs/GaSb superlattices. Infrared detectors are limited by high cost, cooling requirements, and performance instability due to surface leakage currents, restricting their use in critical systems such as night vision and remote chemical sensing. By applying advanced surface passivation techniques using high-k dielectrics and plasma treatments, the proposed work aimed to eliminate parasitic currents and enable uniform, repeatable detector performance, supporting both single-pixel devices and scalable arrays. This advancement would significantly enhance technologies such as Raman and infrared spectroscopy for remote detection of hazardous chemicals, while also improving night-vision and situational awareness capabilities. The project had a strong defence relevance, with the potential to deliver more practical, affordable, and deployable infrared sensing systems and to raise the technology readiness level toward commercial and operational adoption.
Teaching
I am a fellow of the Higher Education Academy (FHEA), UK.
My educational practice is centred on inclusive, research-led teaching that develops critical thinking, technical competence, and global awareness. I align teaching with Cardiff University’s Education and Student Experience framework, promoting academic excellence, continuous enhancement, and digitally enriched provision. My teaching progresses from fundamental principles of quantum mechanics and semiconductor devices physics to research-level application through scaffolded problem-solving and active learning approaches that support diverse student cohorts. I integrate my research in semiconductors, quantum physics, photonics, and optoelectronics into Level 6 and Level 7 teaching, ensuring authenticity and industry relevance. Modules embed research-informed learning.
I supervise Year 3, Year 4, M Phys, and MSc projects integrating fundamental physics with advanced device technologies. My inclusive teaching strategies include structured notes, captioned lectures, asynchronous resources, transparent assessment criteria, and tasks balancing conceptual understanding with mathematical rigour. I incorporate industrial perspectives to ensure alignment with national semiconductor strategies.
Student feedback consistently reflects high satisfaction, highlighting clarity, accessibility, and strong links between theory and technology.
Module Organiser (MO) - Low-dimensional Semiconductor Devices (MPhys + MSc ) - L7
Module Organiser (MO) - Laser Physics and Non-Linear Optics (MPhys + Msc) - L7
Year 4 (MPhys)/MSc Research project (PX4310/PXT999)
Year 3 Undergraduate Physics project (PX3315)
Year 1 Tutor
Biography
Dr Manoj Kesaria is a Senior Lecturer (Associate Professor) in the School of Physical, Chemical and Environmental Sciences at Cardiff University and an internationally recognised experimental physicist specialising in semiconductor physics, molecular beam epitaxy (MBE), and quantum device engineering. With more than 20 years of experience, his research combines fundamental quantum physics with practical engineering to develop next-generation compound semiconductor technologies for sensing, imaging, photonics, and quantum-enabled devices.
His expertise spans the complete compound semiconductor development pipeline, from theoretical modelling and device simulation to molecular beam epitaxy, advanced materials characterisation, and cleanroom device fabrication. Since 2006, he has specialised in the ultra-high vacuum growth and band-structure engineering of Group III-nitride and III-antimonide semiconductor heterostructures using Molecular Beam Epitaxy (MBE), exploiting quantum confinement in quantum dots, quantum wires, complex quantum wells, and short-period superlattices. His research has advanced visible- and infrared-emitting and detecting devices, including light-emitting diodes (LEDs), resonant tunnelling diodes (RTD), avalanche photodetectors (APD), single-photon avalanche photodetectors (SPADs), thermophotovoltaic (TPV) devices, and other quantum-engineered optoelectronic technologies. More recently, he has successfully translated MBE-developed epitaxial concepts to industrial-scale MOCVD through collaborative research with IQE Plc, demonstrating pathways towards scalable semiconductor manufacturing.
Since joining Cardiff University, Dr Kesaria has established an internationally recognised research programme that bridges fundamental semiconductor physics with industrial innovation. In 2020, he founded the Manoj Infrared Quantum Detector (M.IN.D.) Foundry, an interdisciplinary research group dedicated to advancing quantum-engineered infrared detector technologies through semiconductor epitaxy, quantum materials, and device engineering. The Foundry provides a platform for translating pioneering research into commercially relevant technologies and is laying the scientific foundation for the co-founding of Quantum Detector Inc. (UK).
Dr Kesaria has been part of competitive research funding as Principal Investigator or Co-Investigator, securing approximately £14 million in funding, of which around £1.5 million was awarded to Cardiff University. His research has been supported by major national and international programmes, including Innovate UK, EPSRC, QuEOD, Marie Curie ITN-QUANTIMONY, and collaborative projects in integrated photonics. A defining feature of his work is the translation of discoveries made through MBE into technologies with clear industrial and commercial potential.
He currently serves as Technician Champion (a role that bridges academics and technical staff) in the School of Physical, Chemical and Environmental Sciences. Specific to the School of Physics - Radiation Protection Supervisor (RPS), leading outreach activities within the Condensed Matter Physics Group and supporting Cardiff University's international engagement initiatives.
Dr Kesaria maintains extensive collaborations with leading universities, research institutes, and industrial partners across Europe, North America, and Asia. He has supervised numerous undergraduate, postgraduate, doctoral, and postdoctoral researchers, many of whom have progressed to successful careers in academia and the global semiconductor industry.
In parallel with his research, Dr Kesaria has more than two decades of teaching experience, delivering research-led courses in quantum physics, semiconductor devices, photonics, and nonlinear optics. His teaching integrates cutting-edge research with practical engineering, preparing students for careers in both academia and high-technology industries.
Dr Kesaria has authored more than 50 peer-reviewed publications, delivered invited presentations at international conferences, and serves as a reviewer for the UK Engineering and Physical Sciences Research Council (EPSRC). He is also an Editorial Board Member of Nature Scientific Reports, a Fellow of the Higher Education Academy (FHEA), and a member of the Institute of Physics (IOP) and IEEE.
His long-term vision is to advance MBE and quantum-engineered semiconductor materials to enable transformative technologies in infrared sensing, quantum photonics, and next-generation optoelectronic systems, while strengthening the translation of fundamental research into industrial and societal impact.
Honours and awards
2021 – Fellowship of Higher Education Academy (FHEA), U.K., awarded by Advanced Higher Education Academy, UK.
1995 – Fellowship in Physical Sciences, awarded by Council for Scientific and Industrial Research (CSIR), India.
Professional memberships
Member of IOP
Member of IEEE
Academic positions
2021 onward: Senior Lecturer/Associate Professor, School of Physics and Astronomy, Cardiff University.
2018– 2021: Lecturer/Assistant Professor, School of Physics and Astronomy, Cardiff University.
2013–2018: Senior Research Associate at Lancaster University & University of Sheffield.
2012–2013: Research Scientist, University of Houston, Texas and Integrated Micro Sensors Inc (Houston)
2008–2012: Senior Research Fellow and Research Associate, International Centre for Material Science, JNCASR, Bangalore, India
2006–2008: Junior Research Fellow, National Physical Laboratory, New Delhi, India
I have worked as a senior research associate on EPSRC projects (before 2018)
EP/J015849/1 "InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications"
EP/M013707/1 "TPVs for Waste Heat Recovery in Energy Resilient Manufacturing".
Speaking engagements
1. Invited Speaker at IQARUS, San Sebastian, Spain.03-07-2024 (in-person).
Quantimony’s Final Workshop @San Sebastian (Spain) · Quantimony
2. Invited speaker- QUNTIMONY- 2nd AAB review Meeting, Lancaster, April 19 to 21.(in-person).
2nd AAB Meeting & Transferable Skills Training · Quantimony
3. Invited as a speaker at IOP, Industry Technology Programme- Photon 2022, Nottingham (August 30 to September 2)
4. Invited speaker- XXI International Workshop on Physics of Semiconductor Devices (IWPSD) 2021, New Delhi (online).
5. Invited speaker- International Conference on Emerging Electronics (ICEE-2020), New Delhi 26-28 Nov. 2020. (online)
Outreach talks at Schools-
1. The Technology Behind Our Technology- Exploration into the World of Compound Semiconductors, 28-06-2024 (Cardiff)
2. Llanwern High School, Newport, 27-04-2023
3. Howell's School, Cardiff 16-02-2023
College Lecture: Dr Manoj Kesaria | Howell's Co-ed College (gdst.net)
Committees and reviewing
Guest editor - Scientific Reports - Collection - "Superlattices" Superlattices (cardiff.ac.uk)
Editorial Board Member- Nanotechnology- Scientific Reports. Editors | Scientific Reports (cardiff.ac.uk)
Co-guest editor: IET special issue on " Semiconductor Integrated Opto-Electronics 2022 (SOE 2022)
Research Grant Reviewer, EPSRC (2018 onward)
Journal reviewer (2013 onward):
- Nature research journal: Scientific reports (Editorial Board Member- Physics- Nanotechnology)
- AIP journals: Applied Physics Letters, Journal of Applied Physics, AIP Advances, Journal of Vaccum Science and Technology (B),
- IOP journals: Materials Research Express and Semiconductor Science and Technology
- Springer journals: Journal of Material Science, Nanoscale Research Letters, and
- Wiley's Physics Status Solidi B: Basic Solid State Physics.
Supervisions
I am interested in supervising PhD students who are interested in
UV-VIS to LWIR III-Nitrides, III-Antimonides and novel dilute materals.for-
i) Detectors - Photodiodes, Avalanche Photodiode (APD), Single Photon Avalanche Photodiodes (SPAD)
ii) Low dimensional quantum hetero-structures
iii) Thermophotovoltaic (TPV) and solar thermophotovoltaic (SPTV)
Current supervision
Contact Details
+44 29208 75255
Translational Research Hub, Room TRH 1.05 , Maindy Road, Cathays, Cardiff, CF24 4HQ
Queen's Buildings - North Building, Room N0.09, 5 The Parade, Newport Road, Cardiff, CF24 3AA
Research themes
Specialisms
- Compound semiconductors
- Thermophotovoltaics (TPV)
- Light Emitting Diodes (LED)
- Detectors